JP2016526789A5 - - Google Patents
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- Publication number
- JP2016526789A5 JP2016526789A5 JP2016521498A JP2016521498A JP2016526789A5 JP 2016526789 A5 JP2016526789 A5 JP 2016526789A5 JP 2016521498 A JP2016521498 A JP 2016521498A JP 2016521498 A JP2016521498 A JP 2016521498A JP 2016526789 A5 JP2016526789 A5 JP 2016526789A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- insulating material
- forming
- nanowires
- conductive material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002070 nanowire Substances 0.000 claims 34
- 239000011810 insulating material Substances 0.000 claims 33
- 239000004065 semiconductor Substances 0.000 claims 27
- 239000004020 conductor Substances 0.000 claims 19
- 238000004519 manufacturing process Methods 0.000 claims 13
- 238000000034 method Methods 0.000 claims 7
- 238000000151 deposition Methods 0.000 claims 2
- 238000005530 etching Methods 0.000 claims 2
- 239000007769 metal material Substances 0.000 claims 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361836280P | 2013-06-18 | 2013-06-18 | |
| US61/836,280 | 2013-06-18 | ||
| PCT/US2014/042649 WO2014204906A1 (en) | 2013-06-18 | 2014-06-17 | Insulating layer for planarization and definition of the active region of a nanowire device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016526789A JP2016526789A (ja) | 2016-09-05 |
| JP2016526789A5 true JP2016526789A5 (enExample) | 2017-07-27 |
| JP6219506B2 JP6219506B2 (ja) | 2017-10-25 |
Family
ID=52018440
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016521498A Expired - Fee Related JP6219506B2 (ja) | 2013-06-18 | 2014-06-17 | ナノワイヤデバイスの活性領域の平坦化および規定のための絶縁層 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US9224914B2 (enExample) |
| EP (1) | EP3011607A1 (enExample) |
| JP (1) | JP6219506B2 (enExample) |
| TW (1) | TW201515269A (enExample) |
| WO (1) | WO2014204906A1 (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014066357A1 (en) * | 2012-10-26 | 2014-05-01 | Glo Ab | Nanowire led structure and method for manufacturing the same |
| WO2014204906A1 (en) * | 2013-06-18 | 2014-12-24 | Glo-Usa, Inc. | Insulating layer for planarization and definition of the active region of a nanowire device |
| US9972750B2 (en) | 2013-12-13 | 2018-05-15 | Glo Ab | Use of dielectric film to reduce resistivity of transparent conductive oxide in nanowire LEDs |
| US20150206798A1 (en) * | 2014-01-17 | 2015-07-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Interconnect Structure And Method of Forming |
| KR102164796B1 (ko) * | 2014-08-28 | 2020-10-14 | 삼성전자주식회사 | 나노구조 반도체 발광소자 |
| KR20160027610A (ko) * | 2014-09-01 | 2016-03-10 | 삼성전자주식회사 | 나노구조 반도체 발광소자 |
| KR102337405B1 (ko) * | 2014-09-05 | 2021-12-13 | 삼성전자주식회사 | 나노구조 반도체 발광소자 |
| US11515433B2 (en) | 2018-01-09 | 2022-11-29 | University Of Louisville Research Foundation, Inc. | Semiconducting materials with surrounding radial p-n diodes |
| JP7137066B2 (ja) * | 2018-10-23 | 2022-09-14 | 日亜化学工業株式会社 | 発光素子の製造方法 |
| JP7543849B2 (ja) * | 2020-10-30 | 2024-09-03 | セイコーエプソン株式会社 | 発光装置およびプロジェクター |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4058937B2 (ja) | 2001-11-07 | 2008-03-12 | 松下電器産業株式会社 | 半導体発光装置及びその製造方法 |
| US7335908B2 (en) | 2002-07-08 | 2008-02-26 | Qunano Ab | Nanostructures and methods for manufacturing the same |
| US7132677B2 (en) | 2004-02-13 | 2006-11-07 | Dongguk University | Super bright light emitting diode of nanorod array structure having InGaN quantum well and method for manufacturing the same |
| US7230286B2 (en) * | 2005-05-23 | 2007-06-12 | International Business Machines Corporation | Vertical FET with nanowire channels and a silicided bottom contact |
| US20070158661A1 (en) | 2006-01-12 | 2007-07-12 | Rutgers, The State University Of New Jersey | ZnO nanostructure-based light emitting device |
| JP5483887B2 (ja) | 2006-03-08 | 2014-05-07 | クナノ アーベー | Ｓｉ上のエピタキシャルな半導体ナノワイヤの金属無しでの合成方法 |
| CA2643439C (en) | 2006-03-10 | 2015-09-08 | Stc.Unm | Pulsed growth of gan nanowires and applications in group iii nitride semiconductor substrate materials and devices |
| US8426224B2 (en) * | 2006-12-18 | 2013-04-23 | The Regents Of The University Of California | Nanowire array-based light emitting diodes and lasers |
| KR101524319B1 (ko) | 2007-01-12 | 2015-06-10 | 큐나노 에이비 | 시준 리플렉터를 갖는 나노구조 ｌｅｄ 어레이 |
| CN101681813B (zh) | 2007-01-12 | 2012-07-11 | 昆南诺股份有限公司 | 氮化物纳米线及其制造方法 |
| KR101356694B1 (ko) * | 2007-05-10 | 2014-01-29 | 삼성전자주식회사 | 실리콘 나노와이어를 이용한 발광 다이오드 및 그 제조방법 |
| EP2297794B1 (en) | 2008-07-07 | 2017-09-06 | Glo Ab | Nanostructured light emitting diode |
| KR20100051970A (ko) | 2008-11-10 | 2010-05-19 | 강형석 | 변기용 병원균 살균조성물 및 그 제조방법 |
| KR20130136906A (ko) * | 2010-06-18 | 2013-12-13 | 글로 에이비 | 나노와이어 ｌｅｄ 구조와 이를 제조하기 위한 방법 |
| EP2586062A4 (en) | 2010-06-24 | 2015-06-03 | Glo Ab | SUBSTRATE WITH BUFFER LAYER FOR ALIGNED NANODRAHT GROWTH |
| KR101710159B1 (ko) | 2010-09-14 | 2017-03-08 | 삼성전자주식회사 | Ⅲ족 질화물 나노로드 발광소자 및 그 제조 방법 |
| KR101864195B1 (ko) * | 2010-11-15 | 2018-06-01 | 엘지이노텍 주식회사 | 발광 소자 |
| US8350251B1 (en) * | 2011-09-26 | 2013-01-08 | Glo Ab | Nanowire sized opto-electronic structure and method for manufacturing the same |
| US8350249B1 (en) | 2011-09-26 | 2013-01-08 | Glo Ab | Coalesced nanowire structures with interstitial voids and method for manufacturing the same |
| KR101891777B1 (ko) * | 2012-06-25 | 2018-08-24 | 삼성전자주식회사 | 유전체 리플렉터를 구비한 발광소자 및 그 제조방법 |
| WO2014204906A1 (en) * | 2013-06-18 | 2014-12-24 | Glo-Usa, Inc. | Insulating layer for planarization and definition of the active region of a nanowire device |
-
2014
- 2014-06-17 WO PCT/US2014/042649 patent/WO2014204906A1/en not_active Ceased
- 2014-06-17 EP EP14814618.6A patent/EP3011607A1/en not_active Withdrawn
- 2014-06-17 TW TW103120902A patent/TW201515269A/zh unknown
- 2014-06-17 US US14/306,563 patent/US9224914B2/en not_active Expired - Fee Related
- 2014-06-17 JP JP2016521498A patent/JP6219506B2/ja not_active Expired - Fee Related
-
2015
- 2015-12-11 US US14/966,124 patent/US9640723B2/en active Active
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