JP2013026624A5 - - Google Patents

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Publication number
JP2013026624A5
JP2013026624A5 JP2012159145A JP2012159145A JP2013026624A5 JP 2013026624 A5 JP2013026624 A5 JP 2013026624A5 JP 2012159145 A JP2012159145 A JP 2012159145A JP 2012159145 A JP2012159145 A JP 2012159145A JP 2013026624 A5 JP2013026624 A5 JP 2013026624A5
Authority
JP
Japan
Prior art keywords
interconnect
forming
fuses
fuse
seal ring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2012159145A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013026624A (ja
JP6028298B2 (ja
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Publication date
Priority claimed from US13/189,054 external-priority patent/US8349666B1/en
Application filed filed Critical
Publication of JP2013026624A publication Critical patent/JP2013026624A/ja
Publication of JP2013026624A5 publication Critical patent/JP2013026624A5/ja
Application granted granted Critical
Publication of JP6028298B2 publication Critical patent/JP6028298B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2012159145A 2011-07-22 2012-07-18 半導体ダイ上にフィーチャをめっきするためのヒューズバス Expired - Fee Related JP6028298B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/189,054 US8349666B1 (en) 2011-07-22 2011-07-22 Fused buss for plating features on a semiconductor die
US13/189,054 2011-07-22

Publications (3)

Publication Number Publication Date
JP2013026624A JP2013026624A (ja) 2013-02-04
JP2013026624A5 true JP2013026624A5 (enExample) 2015-09-03
JP6028298B2 JP6028298B2 (ja) 2016-11-16

Family

ID=46507887

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012159145A Expired - Fee Related JP6028298B2 (ja) 2011-07-22 2012-07-18 半導体ダイ上にフィーチャをめっきするためのヒューズバス

Country Status (4)

Country Link
US (1) US8349666B1 (enExample)
EP (1) EP2549532B1 (enExample)
JP (1) JP6028298B2 (enExample)
TW (1) TWI538152B (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8519513B2 (en) 2012-01-04 2013-08-27 Freescale Semiconductor, Inc. Semiconductor wafer plating bus
JP5968711B2 (ja) * 2012-07-25 2016-08-10 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
ITMI20121599A1 (it) * 2012-09-25 2014-03-26 St Microelectronics Srl Dispositivo elettronico comprendente un transistore vtmos ed un diodo termico integrati
US8994148B2 (en) * 2013-02-19 2015-03-31 Infineon Technologies Ag Device bond pads over process control monitor structures in a semiconductor die
US10424521B2 (en) 2014-05-13 2019-09-24 Nxp Usa, Inc. Programmable stitch chaining of die-level interconnects for reliability testing
US20150371956A1 (en) * 2014-06-19 2015-12-24 Globalfoundries Inc. Crackstops for bulk semiconductor wafers
JP6435562B2 (ja) * 2014-12-02 2018-12-12 ローム株式会社 半導体装置および半導体装置の製造方法
US20180337228A1 (en) * 2017-05-18 2018-11-22 Taiwan Semiconductor Manufacturing Co., Ltd. Novel seal ring for iii-v compound semiconductor-based devices
FR3079342B1 (fr) * 2018-03-21 2020-04-17 Stmicroelectronics (Rousset) Sas Dispositif fusible integre
CN109461717A (zh) * 2018-10-15 2019-03-12 上海华虹宏力半导体制造有限公司 一种晶圆及其形成方法、等离子体裂片方法
US10978404B2 (en) * 2019-08-22 2021-04-13 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure and method for fabricating semiconductor structure
CN115249667A (zh) * 2021-04-27 2022-10-28 三星电子株式会社 半导体装置
KR20220150158A (ko) * 2021-05-03 2022-11-10 에스케이하이닉스 주식회사 크랙 전파 가이드를 포함한 반도체 칩을 제조하는 방법
CN113410209B (zh) * 2021-06-09 2023-07-18 合肥中感微电子有限公司 一种修调电路
JP2023043036A (ja) * 2021-09-15 2023-03-28 キオクシア株式会社 半導体装置
US20240421077A1 (en) * 2023-06-15 2024-12-19 Taiwan Semiconductor Manufacturing Co., Ltd. Die stitching for stacking architecture in semiconductor packages

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62108543A (ja) * 1985-11-06 1987-05-19 Hitachi Ltd 半導体装置の電極形成法
US5384727A (en) * 1993-11-08 1995-01-24 Advanced Micro Devices, Inc. Fuse trimming in plastic package devices
US6222212B1 (en) 1994-01-27 2001-04-24 Integrated Device Technology, Inc. Semiconductor device having programmable interconnect layers
US5813881A (en) 1994-02-08 1998-09-29 Prolinx Labs Corporation Programmable cable and cable adapter using fuses and antifuses
JP3119352B2 (ja) * 1998-04-15 2000-12-18 日本電気株式会社 半導体装置のメッキ構造体形成方法
US6350633B1 (en) 2000-08-22 2002-02-26 Charles W. C. Lin Semiconductor chip assembly with simultaneously electroplated contact terminal and connection joint
JP4502173B2 (ja) * 2003-02-03 2010-07-14 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法
US6911360B2 (en) 2003-04-29 2005-06-28 Freescale Semiconductor, Inc. Fuse and method for forming
JP2006013229A (ja) * 2004-06-28 2006-01-12 Toshiba Corp 半導体装置及びその製造方法
JP4779324B2 (ja) * 2004-09-01 2011-09-28 セイコーエプソン株式会社 半導体装置及び半導体装置の製造方法
US7777338B2 (en) * 2004-09-13 2010-08-17 Taiwan Semiconductor Manufacturing Co., Ltd. Seal ring structure for integrated circuit chips
US7232711B2 (en) * 2005-05-24 2007-06-19 International Business Machines Corporation Method and structure to prevent circuit network charging during fabrication of integrated circuits
US8242576B2 (en) * 2005-07-21 2012-08-14 Taiwan Semiconductor Manufacturing Co., Ltd. Protection layer for preventing laser damage on semiconductor devices
US7575958B2 (en) 2005-10-11 2009-08-18 Freescale Semiconductor, Inc. Programmable fuse with silicon germanium
US7413980B2 (en) * 2006-04-25 2008-08-19 Texas Instruments Incorporated Semiconductor device with improved contact fuse
JP2008016707A (ja) * 2006-07-07 2008-01-24 Matsushita Electric Ind Co Ltd 半導体装置及びその検査方法
US7586175B2 (en) * 2006-10-23 2009-09-08 Samsung Electronics Co., Ltd. Semiconductor wafer having embedded electroplating current paths to provide uniform plating over wafer surface
US7948060B2 (en) * 2008-07-01 2011-05-24 Xmos Limited Integrated circuit structure
US8373254B2 (en) * 2008-07-29 2013-02-12 Taiwan Semiconductor Manufacturing Company, Ltd. Structure for reducing integrated circuit corner peeling
JP2010153753A (ja) * 2008-12-26 2010-07-08 Renesas Electronics Corp 半導体装置
US8865592B2 (en) * 2009-02-03 2014-10-21 Infineon Technologies Ag Silicided semiconductor structure and method of forming the same

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