TW201515269A - 用於平整化及界定奈米線裝置之活化區的絕緣層 - Google Patents

用於平整化及界定奈米線裝置之活化區的絕緣層 Download PDF

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Publication number
TW201515269A
TW201515269A TW103120902A TW103120902A TW201515269A TW 201515269 A TW201515269 A TW 201515269A TW 103120902 A TW103120902 A TW 103120902A TW 103120902 A TW103120902 A TW 103120902A TW 201515269 A TW201515269 A TW 201515269A
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Taiwan
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layer
insulating material
nanowire
nanowires
mask
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TW103120902A
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English (en)
Chinese (zh)
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史考特 布萊德 海納
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Glo公司
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6534—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H10H20/818—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous within the light-emitting regions

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  • Led Devices (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
TW103120902A 2013-06-18 2014-06-17 用於平整化及界定奈米線裝置之活化區的絕緣層 TW201515269A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US201361836280P 2013-06-18 2013-06-18

Publications (1)

Publication Number Publication Date
TW201515269A true TW201515269A (zh) 2015-04-16

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW103120902A TW201515269A (zh) 2013-06-18 2014-06-17 用於平整化及界定奈米線裝置之活化區的絕緣層

Country Status (5)

Country Link
US (2) US9224914B2 (enExample)
EP (1) EP3011607A1 (enExample)
JP (1) JP6219506B2 (enExample)
TW (1) TW201515269A (enExample)
WO (1) WO2014204906A1 (enExample)

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KR20150103661A (ko) * 2012-10-26 2015-09-11 글로 에이비 나노와이어 led 구조 및 이를 제조하는 방법
JP6219506B2 (ja) * 2013-06-18 2017-10-25 グロ アーベーＧｌｏ Ａｂ ナノワイヤデバイスの活性領域の平坦化および規定のための絶縁層
US9972750B2 (en) 2013-12-13 2018-05-15 Glo Ab Use of dielectric film to reduce resistivity of transparent conductive oxide in nanowire LEDs
US20150206798A1 (en) * 2014-01-17 2015-07-23 Taiwan Semiconductor Manufacturing Company, Ltd. Interconnect Structure And Method of Forming
KR102164796B1 (ko) * 2014-08-28 2020-10-14 삼성전자주식회사 나노구조 반도체 발광소자
KR20160027610A (ko) * 2014-09-01 2016-03-10 삼성전자주식회사 나노구조 반도체 발광소자
KR102337405B1 (ko) * 2014-09-05 2021-12-13 삼성전자주식회사 나노구조 반도체 발광소자
WO2019139862A1 (en) * 2018-01-09 2019-07-18 University Of Louisville Research Foundation, Inc. Semiconducting materials with surrounding radial p-n diodes
JP7137066B2 (ja) * 2018-10-23 2022-09-14 日亜化学工業株式会社 発光素子の製造方法
JP7543849B2 (ja) * 2020-10-30 2024-09-03 セイコーエプソン株式会社 発光装置およびプロジェクター

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JP4058937B2 (ja) 2001-11-07 2008-03-12 松下電器産業株式会社 半導体発光装置及びその製造方法
US7335908B2 (en) 2002-07-08 2008-02-26 Qunano Ab Nanostructures and methods for manufacturing the same
US7132677B2 (en) 2004-02-13 2006-11-07 Dongguk University Super bright light emitting diode of nanorod array structure having InGaN quantum well and method for manufacturing the same
US7230286B2 (en) * 2005-05-23 2007-06-12 International Business Machines Corporation Vertical FET with nanowire channels and a silicided bottom contact
US20070158661A1 (en) 2006-01-12 2007-07-12 Rutgers, The State University Of New Jersey ZnO nanostructure-based light emitting device
KR101375435B1 (ko) 2006-03-08 2014-03-17 큐나노 에이비 Ｓｉ 상의 에피택셜 반도체 나노와이어를 금속 없이 합성하기 위한 방법
EP1994552B1 (en) 2006-03-10 2020-12-30 UNM Rainforest Innovations Two-phase growth of group iii-v nanowires
WO2008140611A2 (en) * 2006-12-18 2008-11-20 The Regents Of The University Of California Nanowire array-based light emitting diodes and lasers
KR101524319B1 (ko) 2007-01-12 2015-06-10 큐나노 에이비 시준 리플렉터를 갖는 나노구조 ｌｅｄ 어레이
EP2102899B1 (en) 2007-01-12 2020-11-11 QuNano AB Nitride nanowires and method of producing such
KR101356694B1 (ko) 2007-05-10 2014-01-29 삼성전자주식회사 실리콘 나노와이어를 이용한 발광 다이오드 및 그 제조방법
CN103022282B (zh) 2008-07-07 2016-02-03 格罗有限公司 纳米结构led
KR20100051970A (ko) 2008-11-10 2010-05-19 강형석 변기용 병원균 살균조성물 및 그 제조방법
EP2583317A4 (en) * 2010-06-18 2016-06-15 Glo Ab NANODRAHT LED STRUCTURE AND METHOD FOR THE PRODUCTION THEREOF
JP5981426B2 (ja) 2010-06-24 2016-08-31 グロ アーベーＧｌｏ Ａｂ 配向されたナノワイヤー成長用のバッファ層を有する基板
KR101710159B1 (ko) 2010-09-14 2017-03-08 삼성전자주식회사 Ⅲ족 질화물 나노로드 발광소자 및 그 제조 방법
KR101864195B1 (ko) * 2010-11-15 2018-06-01 엘지이노텍 주식회사 발광 소자
US8350249B1 (en) 2011-09-26 2013-01-08 Glo Ab Coalesced nanowire structures with interstitial voids and method for manufacturing the same
US8350251B1 (en) * 2011-09-26 2013-01-08 Glo Ab Nanowire sized opto-electronic structure and method for manufacturing the same
KR101891777B1 (ko) * 2012-06-25 2018-08-24 삼성전자주식회사 유전체 리플렉터를 구비한 발광소자 및 그 제조방법
JP6219506B2 (ja) * 2013-06-18 2017-10-25 グロ アーベーＧｌｏ Ａｂ ナノワイヤデバイスの活性領域の平坦化および規定のための絶縁層

Also Published As

Publication number Publication date
WO2014204906A1 (en) 2014-12-24
JP2016526789A (ja) 2016-09-05
JP6219506B2 (ja) 2017-10-25
US20160172538A1 (en) 2016-06-16
EP3011607A1 (en) 2016-04-27
US20140367638A1 (en) 2014-12-18
US9224914B2 (en) 2015-12-29
US9640723B2 (en) 2017-05-02

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