CN102089893B - 纳米结构led - Google Patents

纳米结构led Download PDF

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CN102089893B
CN102089893B CN2009801264269A CN200980126426A CN102089893B CN 102089893 B CN102089893 B CN 102089893B CN 2009801264269 A CN2009801264269 A CN 2009801264269A CN 200980126426 A CN200980126426 A CN 200980126426A CN 102089893 B CN102089893 B CN 102089893B
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nano wire
led
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CN102089893A (zh
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S.L.康塞克
J.奧尔森
Y.马特诺夫
P.汉伯格
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Abstract

根据本发明的器件包含纳米结构LED，该纳米结构LED具有从衬底的第一区域突出的第一组纳米线以及在衬底的第二区域中的接触装置。第一组纳米线的每个纳米线包含p-i-n结且每个纳米线的顶部部分或至少一种纳米线选集被覆盖有光反射接触层。第二区域的接触装置与纳米线的底部部分电接触，光反射接触层经由p-i-n结与第二区域的接触装置电接触。因而当电压施加在第二区域的接触装置与光反射接触层之间时，在纳米线内产生光。用于倒装芯片结合的第一组接触焊盘可以被提供在光反射接触层的顶部上，其是分布式的并被分离以使跨过该层的电压相等从而减小平均串联电阻。

Description

纳米结构LED
技术领域
本发明涉及LED。具体而言本发明涉及纳米结构LED。
背景技术
基于纳米线的LED（发光二极管）包含生长在例如硅或GaN的衬底上的半导体纳米线或半导体纳米线的阵列。典型地，在这种衬底上首先生长平面缓冲层且随后在缓冲层的表面上生长纳米线的阵列。缓冲层被用作用于生长纳米线的基底层。附加地，它可以用于电流传输。缓冲层对于由LED发射的光通常是透明的。
每个纳米线从缓冲层突出并且包含在纳米线核心周围或沿着纳米线轴形成p-i-n结的多个材料区域。当电荷载流子被注入到相应的p和n区域中时，它们在i区中复合，且该复合生成光。光在每个纳米线内部随机地产生并在所有方向上发射。这种结构的一个问题在于，所产生的光的相当大的部分被浪费，因为只有一部分被沿期望方向引导。
与基于纳米线的LED关联的另一个问题为，这种结构依赖于缓冲层的电导率来将电流传输到有源区，即p-i-n结。对于大的器件，接触与LED内纳米线之间的距离会是相当大的，导致缓冲层上的电压降和电阻性损耗。载流子复合和光生成将主要地在n接触侧的接触焊盘附近发生，从而导致电流拥挤和不均匀的亮度。当将LED器件安装在向该LED器件供应电流用以生成光的载体上时，这个问题仍然存在。
pn结和p-i-n结之间的差异在于后者具有更宽的有源区。更宽的有源区允许更高的在i区中复合且因而生成光的可能性，不过pn结和p-i-n结都可以用于LED器件中的光生成。
发明内容
就能够提供具有高效率且适合大规模生产的纳米结构LED而言，现有技术存在缺陷。
本发明的目的是克服现有技术的至少其中一些缺陷。这是通过如权利要求1中限定的器件来实现的。
根据本发明的器件包含一种纳米结构LED，该纳米结构LED具有至少一个纳米线和接触装置。每个纳米线从衬底上的缓冲层突出且包含pn结或p-i-n结，并且每个纳米线的顶部部分或者至少一种纳米线选集覆盖有光反射或透明接触层。接触装置与每个纳米线的底部部分电接触，光反射或透明接触层经由pn结或p-i-n结与接触装置电接触。因而当电压施加在接触装置与光反射或透明接触层之间时，在纳米线中的有源区内产生光。用于倒装芯片结合的第一组接触焊盘在缓冲层的顶部上是分布式的且是分离的以减小平均串联电阻。
这种纳米结构LED可以安置在具有接触焊盘的载体上，所述接触焊盘对应于位于纳米线LED芯片上的p-接触焊盘和n-接触焊盘的位置，并且利用焊接、超声焊、结合（bonding）或者通过使用导电胶被附连。载体上的接触焊盘可以电连接到LED封装的适当电源引线。
本发明的一个目的是克服与倒装芯片结合LED有关的问题，即，增大效率以及减小与缓冲层中串联电阻有关的损耗。本发明的另一目的是呈现低能耗。
本发明的一个另外目的是提供一种纳米线LED，该纳米线LED包含可以被排它地且单独地寻址的一个或多个纳米线接触组。
本发明的实施例在从属权利要求中限定。当结合附图和权利要求考虑时，根据对本发明实施例的实例的下述详细描述，本发明的其它目的、优点和新颖特征将变得清楚。
附图说明
现在将参考附图描述本发明的优选实施例，在附图中：
图1示出纳米线LED的示意性结构；
图2a）示出具有底部接触和顶部接触的纳米线LED，该顶部接触严格地限定LED的有源区，以及图2b）示出可以被排它地且单独地寻址的具有两个有源区的纳米线LED；
图3说明具有顶部接触和底部接触的纳米线LED；
图4为针对几个单独接触如何设计纳米线LED上的接触图案的建议；
图5为针对几个单独接触如何设计纳米线LED上的接触图案的另一建议；
图6示出利用p接触和n接触之间的接触凸点而结合在载体上的纳米线结构；
图7示出具有用作冷却凸缘的位于纳米线接触组之间的区域的LED器件，其中在该区域处纳米线已经被移除；
图8示出安装在具有控制电子电路的载体上的倒装芯片LED；
图9示出LED器件如何可以用作车辆中的智能前灯。
具体实施方式
将在下面描述的实施例全部是基于纳米结构LED的，且可以在WO2008048704中找到其现有技术型式。
在下面的讨论中，措词纳米结构或纳米元件旨在表示具有至少两种不大于约1μm的维度的结构。
在根据本发明的纳米结构LED的一个实施例图1中，纳米线110从衬底突出或者从沉积在衬底上的缓冲层120突出（图中未示出衬底），其中衬底或缓冲层120可以是Si、Ge、Al2O3、SiC、石英、玻璃、GaN或者适合纳米线生长以及进一步加工的任何其它材料。缓冲层120可以由与衬底材料不同的材料制成。通常选择缓冲层120来匹配期望的纳米线材料，并因而形成在之后工艺中用于纳米线的生长基底。这意味着选择缓冲层120使得纳米线和缓冲层的晶格参数容许纳米线生长。纳米线的生长可以通过利用在上面提到的专利申请中描述的方法来实现，其中公知的掩模技术得到具有pn结或p-i-n结160的纳米线。纳米线可以是任何半导体材料，不过比如GaN、InP、GaAs、AlInGaN、AlGaN和InGaN等的III-V半导体对于生产LED而言是有利的。在一些指定区域中，通过向下蚀刻到缓冲层120随后除去纳米线而得到第一区域和第二区域，在该第一区域，纳米线从衬底突出，该第二区域不含有纳米线且与第一区域中纳米线的底部部分145电接触。在该第二区域中，金属或重掺杂半导体布置成形成接触装置。在下文中，除非另外指出，措词p-i-n结旨在涵盖pn结和p-i-n结这二者。
因而原则上，除了在第一组接触焊盘190接触缓冲层或衬底的位置（在此处纳米线已被移除）之外，衬底都被覆盖有纳米线。根据本发明，根据图2a在纳米线110上限定第二组（多个）接触焊盘180和光反射或透明接触层130，并且第二组（多个）接触焊盘180和光反射或透明接触层130因此严格地限定LED器件的发光有源区。位于由第二组（多个）接触焊盘180和光反射或透明层130限定的区域外部的所有纳米线110将成为电学死区（electrically dead），且在电压施加于第一组（多个）接触焊盘190和第二组（多个）接触焊盘180之间时对光的形成没有贡献。没有电流泄露到位于有源区外部的纳米线。因而，纳米线技术提供了一种独特的能力以允许利用第二组接触焊盘来严格限定有源区，这在平面技术中是不可能的。
图2b说明本发明的实施例，在该实施例中第二组（多个）接触焊盘180存在两个接触焊盘。如上所述，只有位于第二组（多个）接触焊盘180和光反射或透明层130下面的纳米线110在施加电压产生光时是有源的。图2中在纳米线顶部上分布两个接触，这使得有可能排它地且单独地控制由第二组（多个）接触焊盘180和光反射或透明层130限定的两个纳米线接触组。由于没有电流泄露到有源区旁边的纳米线，有源区的分辨率由接触图案的分辨率严格地确定。因而，具有大量纳米线接触组（所有纳米线接触组可以被排它地且单独地寻址）的衬底可以用于形成例如显示器、红-绿-蓝-LED装置（RGB）、调光器、车辆前灯等。
参考图3可以看出，形成光反射接触层130的金属反射器或者镜层形成于第一区域中突出的纳米线的顶部部分140上。光反射接触层130可以通过各种方式形成，不过使用PVD（物理汽相沉积）方法和公知的掩模技术是优选的方法。反射器优选由铝或银制成，但是也可以使用其它金属或金属合金。光反射接触层130的目的是防止光沿着除优选方向以外的方向从该结构离开，以及将发射光聚焦到一个单一方向。附加地，光反射接触层130通常还用作到纳米线的顶部接触。
基于纳米线的LED或者是正面发光或者是背面发光，即在纳米线内产生的光从纳米线的顶部被发射，或者分别通过纳米线底部、缓冲层和衬底被发射。像这样的基于纳米线的LED器件通常安装在载体上，该载体提供机械支撑和电连接。载体不应吸收光或者限制从该器件的光发射。构造具有改善的效率的LED的一种方式是制作倒装芯片器件。在光谱的可见区域中具有高反射率的金属层形成于纳米线的顶部上。作为该工艺的一部分，其上已经生长了纳米线的衬底被移除，留下缓冲层120，从而为光通过所述缓冲层120发射留出余地，该缓冲层已经形成用于纳米线的基底。被引导朝向纳米线的顶部的发射光随后在遇到金属层时被反射，因而形成用于离开该结构的光的明确主导方向，如图3所示。这种制作该结构的方式为更多份额的发射光被引导到期望方向上留出余地，提高了LED的效率。
为了能够将该结构附连到载体晶片280（图6）或微电子结构，接触焊盘必须形成于缓冲层120（也称为底层）上以及光反射接触层130（称为顶层）上。完成这一点的第一种方式是在缓冲层上形成一个接触且在镜层上形成一个接触，使得该层本身分配流到纳米线的电流。这将使得独立于其余的纳米线或纳米线组来寻址一个纳米线或一组纳米线是不可能的，因为一个接触层的至少其中一个接触焊盘需要被分配来使得能够单独地寻址纳米线组。此外，每个接触层的一个单个接触将产生例如电阻性损耗的损耗，因为在该层内的传导距离会相对长。形成接触的第二种优选方式是形成几个接触焊盘，并且例如通过形成一层接触焊盘交错阵列，将它们分配在缓冲层120表面之上以使表面上的电流密度相等。这通过减小源于缓冲层内的串联电阻的电阻性损耗而改善了LED器件的效率。随着层的电阻率增大，电阻性损耗的效应变得越来越显著。对于具有低电阻率的金属层的情形，增益是小的，但是对于例如半导体缓冲层的具有较高电阻率的层，增益会是明显的。缓冲层上的第一组接触焊盘190可以称为阴极，且光反射接触层的顶部上的第二组接触焊盘180可以称为阳极。
纳米线接触组包含至少一个纳米线，但是优选地每个接触组包含多个纳米线。在一组纳米线中具有多个纳米线增大了器件的可靠性，因为这种情况下纳米线组不是强烈地依赖于一个单一纳米线的功能。然而，在此文本中措词“组”被限定为涵盖了这样的情形：纳米线接触组包含仅具有一个纳米线的情形。
使用分布式接触焊盘的方法也可应用在光反射接触层130的顶部上的第二区域上。该层很多时候是金属层，但是它也可以由具有高的光学反射率和相对高的电导率的化合物材料构成。在光反射接触层130被适当地调适时，分布式接触焊盘将使得能够对至少一组纳米线排它地且单独地寻址。即使在金属光反射接触层130的情形中，使用分布式接触焊盘的另一基本优点在于，当该结构被结合在载体晶片280上时，增大数目的接触点提供了改进的结构支撑。
对于第一组接触焊盘190，可以按许多不同方式以及按许多几何配置，在原则上利用任何图案来完成该分布，只要接触焊盘不使顶层和底层之间短路即可。分布式接触焊盘的优点在于，它们可以使它们所应用到的层的电流分布相等，这也可以利用呈不规则图案的分布式接触焊盘来实现。因而，接触焊盘的几何布置不是关键的，只要实现电流分布效应即可。
在本发明的一个实施例中，接触焊盘的接触图案是使用分别用于顶层和底层的多个阵列来形成的，并且简单地使用于顶层和底层的接触焊盘阵列相对于彼此横向地位移。用于底层的接触焊盘可以全部通过例如缓冲层被连接，且因而分布在纳米线或纳米线组之间，只要该接触层不用于单独寻址即可。用于顶层的接触焊盘也是分布式的，但是在该接触层被用于单独寻址时，根本不通过光反射接触层130而相互连接，如图7和8所示。
在另一实施例中，用于顶层和底层的第一组接触焊盘190和第二组接触焊盘180形成为在图4中看到的相互垂直的阵列。如在图4和5的设计中所看到的，电绝缘部分250将多个组分离，该电绝缘部分可以是电绝缘材料或者只是不存在导电材料。在图5中，接触焊盘形成为具有用于第一和第二区域的正方形或长方形形状的矩阵图案，且随后相对于彼此横向地位移。几何接触焊盘设置的组合也是可以的。图4和5的设计以及其组合仅仅示出形成器件的导电图案的几个可能方式，不过当然存在无限多个解决方案。
当LED结构通过焊接而附连到另一晶片时，接触焊盘也可以在结合工艺中用作焊接凸点260（图6和8）。如果恰当地选择接触焊盘和晶片中材料的类型，则两个单元可以相互热结合。另一种方式是在结合之前将焊接凸点安装在接触焊盘上。在图6和8中可以看到使用焊接凸点结合在载体晶片上的倒装芯片LED器件。关于焊接凸点的形状无论如何也不是旨在示出实际情形中的形状，而是如此形成从而容易理解附图。
在根据图7的本发明的一个实施例中，纳米线具有用于第一组接触焊盘190的一个公共接触，例如缓冲层。第二组接触焊盘180和光反射接触层130是分布式的且在电学上是分离的，以便纳米线组可以独立于其它纳米线组而被排它地且单独地寻址，使得一组纳米线表示例如一个像素。这使得能够获得这样的布置，其中不同的纳米线组具有不同的属性，例如不同的组可以适于表示红-绿-蓝（RGB）装置中的颜色。在图中（图7），纳米线接触组被蚀刻形成的凹槽分离。然而，对于用于纳米线的分布式接触的情形，不一定如此。纳米线接触组之间的电学死区也可以是非有源的纳米线，因为有源区，即有源纳米线接触组，是由光反射接触层和接触焊盘严格限定的，且每个有源纳米线组可以被单独寻址。在LED的平面技术制作中情况不一定如此，其中在这种技术中漏电流等将毁坏单个LED。
可以通过若干种方式实现使单独接触区域表示RGB装置中的不同颜色。一组纳米线可以适于对不同电压电平作出不同响应，使得第一电压电平表示红色光，第二电压电平表示绿色光，以及第三电压电平表示蓝色光。因此，纳米线接触组可以被控制以发射期望波长且因而是期望颜色的光。另一种可能的解决方案是使不同的纳米线接触组包含具有不同材料组分的纳米线，且因而不同组的纳米线对同一电压电平作出不同响应。按照相同方式，纳米线接触组可以适于对所施加的电压作出响应，使得增加的电压导致增加的强度，因而更高的电压导致该特定纳米线组的更强的发射。按此方式，例如RGB的彩色发射的强度可以被逐个颜色地控制。
在另一实施例中，大量纳米线组布置在衬底上，其中有可能排它地且单独地寻址每一个组。在施加电压时纳米线组可以全部具有相同的属性，这里称之为有源组，不过有源组的数目可以依赖于所期望的光量而变化。例如当使用LED作为车辆（例如汽车、卡车、火车等）中的前灯时，这会是非常有用的。光（长焦距光束或短焦距光束）的量可以由有源纳米线组的数目来控制。也就是说，更多的有源组意味着更多的发射光。此外，不同的纳米线组可以归因于不同的照明模式，例如用于公路驾驶的一种模式、用于乡村驾驶的一种模式以及用于恶劣天气驾驶的一种模式等，如图8所示。
制作这种器件的一种方式是在衬底上的n掺杂GaN缓冲层的顶部上生长一个或多个纳米线阵列。纳米线布置成均匀阵列或者具有间隙的子阵列的集合，每个子阵列对应于单独的像素。纳米线包括n掺杂GaN核心、有源径向InGaN层和p掺杂壳层。在后处理期间，纳米线首先用金属叠层涂覆，该金属叠层形成到壳层的p接触、金属反射器以及金属结合垫。金属层被图案化以形成器件的单独像素。这些像素相互电学隔离。随后，缓冲层的公共n接触形成于显示器的有源区外部的区域内。在该区域，纳米线例如通过蚀刻被局部地移除且底下的绝缘掩模层被移除以暴露GaN缓冲层。n接触被施加到其且接触焊盘被形成。制作在衬底上的纳米线LED管芯被置于基台（sub-mount）晶片上并利用焊接或超声焊来附连，其中该基台芯片具有接触焊盘，所述接触焊盘与制作在衬底上的纳米线LED管芯上的p和n接触焊盘的位置对应。基台晶片也可包含用于驱动LED像素的有源晶体管电流源矩阵。随后，原始衬底的材料通过研磨、蚀刻、抛磨或者这些方法的组合被移除。最后，颜色转换磷光体层可以施加在光从该结构离开之处的表面，以便由例如蓝色光发射产生白色光。
在本发明的另一实施例中，位于纳米线的顶部上的光反射接触层130为铝或银。在金属中，银在光谱的可见光区域中具有最佳的反射系数，但是如果不包覆在结构内部，其在正常气氛中更容易出现腐蚀损害。Si3N4、SiO2、Al2O3或任何其它稳定电介质可以用作覆层。在沉积之后，该覆层优选地被图案化以允许排它且单独地电接触到单独纳米线或纳米线组的镜层。铝为另一个良好的选择。它在可见光区域中的反射率略低于银，但是在干的大气环境中呈现非常良好的抗腐蚀性。为了提高器件可靠性，如上所述的附加电介质包覆仍然会是期望的。其它可能的解决方案为非金属高反射率材料，其在例如集成到工程（engineered）布拉格反射器叠层中时，在特定波长间隔中实际上可以达到比银更高的反射系数。这些包括来自例如SiO2、Si3N4和Al2O3的化合物的电介质多层。这种电介质镜在电学上不导电。因此它们应该与在多层电介质镜之前沉积在纳米线上的透明导电材料（比如铟锡氧化物(ITO)）组合。多层电介质镜随后必须被图案化以允许电连接到透明导体并因此电连接到该器件。
在本发明的另一实施例中，光反射接触层130沉积在纳米结构LED的顶部上，使得光反射接触层130沿第一区域的至少一组纳米线的外围纳米线的侧壁向下延伸。这进一步提高纳米结构LED的效率，因为利用这种布置，所产生的光只沿一个方向离开该结构，且该方向为用户优选和限定的方向。在所有其它方向，光将被反射直至它通过该唯一的开放出口离开为止。
在本发明的另一实施例中，使用具有高的电导率的胶，将纳米结构LED胶粘在新的载体晶片280上。优选地当新的载体晶片280不包含复杂引线图案，而仅仅是旨在对LED供电的大接触区域时，进行这样的操作。不过，胶粘技术也可以用于具有更复杂引线图案的要求更高的应用。
用作新的载体晶片280的载体可具有不同形式。它可以是用于进一步加工的新衬底。它可以是微电子结构，其中LED芯片只是为整个器件添加另一重要特征。新的晶片也可以是当组装在一起时仅供应电子引线以馈给LED结构的晶片。在这种意义上，晶片不打算是限制性的且仅包含半导体材料。其也可以是例如玻璃衬底或者提供充分结构支撑的任何其它衬底。
在本发明的另一实施例中，纳米结构LED包含至少一个纳米线和接触装置，其中每个纳米线从衬底突出，每个纳米线包含pn结或p-i-n结（160）且每个纳米线的顶部部分（140）覆盖有透明接触层。该接触装置与每个纳米线的底部部分（145）电接触并且该透明接触层经由pn结或p-i-n结与接触装置电接触，其中该接触装置是分布式的且彼此分离的第一组接触焊盘（190）。
在该实施例中，透明接触层也优选地被分布和布置成接触焊盘，使得每个接触焊盘排它地且单独地电连接到一个纳米线或一组纳米线。按此方式，该实施例可以按照与在本申请中先前描述的相同的方式被应用，区别在于：光通过纳米线的顶部部分发射，而不是在顶部部分被反射以及相反通过底部部分被发射。因而，在此实施例中纳米结构LED无需结合到例如载体晶片。
本领域技术人员将理解，p接触和n接触可以互换使用，使得p接触不限于用作与纳米线的顶部接触的顶部接触，且n接触不限于用作与纳米线的底部部分接触的接触。尽管本发明已经结合在目前被认为是最实用和优选的实施例予以描述，不过应理解本发明不限于所公开的实施例，相反其旨在涵盖在所附权利要求的范围内的各种调整和等价布置。

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1.一种纳米结构LED，该纳米结构LED包含至少一个纳米线和接触装置，其中每个纳米线从衬底突出，每个纳米线包含pn结或p-i-n结（160）并且每个纳米线的顶部部分（140）或者至少一部分纳米线被覆盖有光反射或透明接触层（130）以形成至少一个纳米线接触组，且该接触装置与每个纳米线的底部部分（145）电接触，该光反射或透明接触层（130）经由pn结或p-i-n结与该接触装置电接触，其特征在于该接触装置是分布式的且彼此分离以减小平均串联电阻的第一组接触焊盘（190）。
2.根据权利要求1的纳米结构LED，其中所述衬底包含介于所述衬底和所述至少一个纳米线之间的缓冲层（120）。
3.根据权利要求1的纳米结构LED，其中所述光反射或透明接触层（130）限定多个纳米线接触组（110）。
4.根据权利要求1或3的纳米结构LED，进一步包含分布在由光反射或透明接触层（130）形成的表面的顶部上的第二组分布式接触焊盘（180）。
5.根据权利要求4的纳米结构LED，其中所述第二组分布式接触焊盘（180）中的一个或多个接触焊盘与至少一个纳米线接触组（110）一个一个单独地接触，使得所述至少一个纳米线接触组（110）能够被单独地且独立于其它纳米线组（110）寻址。
6.根据权利要求5的纳米结构LED，其中存在多个这种纳米线接触组，所述纳米线接触组能够被单独地且独立于其它纳米线组（110）寻址。
7.根据权利要求2、3、5和6中的任一项的纳米结构LED，其中所述第一组接触焊盘（190）的全部接触焊盘通过所述缓冲层（120）被连接。
8.根据权利要求1、2、3、5和6中的任一项的纳米结构LED，其中所述纳米线和所述第一组接触焊盘（190）置于所述衬底的同一侧。
9.根据权利要求1、2、3、5和6中的任一项的纳米结构LED，其中所述纳米结构LED包含载体结构（280），该载体结构（280）结合到所述第一组接触焊盘（190）和所述第二组分布式接触焊盘（180）。
10.根据权利要求5和6中的任一项的纳米结构LED，其中所述第一组接触焊盘（190）和/或所述第二组分布式接触焊盘（180）形成阵列。
11.根据权利要求1、2、3、5和6中的任一项的纳米结构LED，其中所述光反射接触层（130）为铝或银。
12.根据权利要求1、2、3、5和6中的任一项的纳米结构LED，其中所述光反射接触层（130）沿第一区域的外围纳米线的侧壁向下延伸。
13.根据权利要求1、2、3、5和6中的任一项或者10的纳米结构LED，其中所述透明接触层（130）为ZnxO1-x或InxSnyO1-x-y。
14.根据权利要求1、2、3、5和6中的任一项的纳米结构LED，其中所述纳米结构LED被胶粘在载体结构上。
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