JP2016526789A - ナノワイヤデバイスの活性領域の平坦化および規定のための絶縁層 - Google Patents
ナノワイヤデバイスの活性領域の平坦化および規定のための絶縁層 Download PDFInfo
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- 239000002070 nanowire Substances 0.000 title claims abstract description 176
- 239000004065 semiconductor Substances 0.000 claims abstract description 58
- 238000004519 manufacturing process Methods 0.000 claims abstract description 45
- 239000011810 insulating material Substances 0.000 claims abstract description 40
- 238000000034 method Methods 0.000 claims description 48
- 238000005530 etching Methods 0.000 claims description 25
- 239000000463 material Substances 0.000 claims description 25
- 238000000151 deposition Methods 0.000 claims description 21
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 15
- 229920002120 photoresistant polymer Polymers 0.000 claims description 11
- 238000005229 chemical vapour deposition Methods 0.000 claims description 9
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 8
- 239000010931 gold Substances 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 239000004593 Epoxy Substances 0.000 claims description 5
- 238000002161 passivation Methods 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims 11
- 239000007769 metal material Substances 0.000 claims 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 2
- 239000010936 titanium Substances 0.000 claims 2
- 238000005137 deposition process Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 188
- 229910052751 metal Inorganic materials 0.000 description 30
- 239000002184 metal Substances 0.000 description 30
- 239000000758 substrate Substances 0.000 description 18
- 230000008021 deposition Effects 0.000 description 14
- 238000001312 dry etching Methods 0.000 description 9
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 8
- 229910002704 AlGaN Inorganic materials 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- 239000002086 nanomaterial Substances 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000009616 inductively coupled plasma Methods 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- 229910000673 Indium arsenide Inorganic materials 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000053 physical method Methods 0.000 description 2
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- 229910052710 silicon Inorganic materials 0.000 description 2
- 229910004613 CdTe Inorganic materials 0.000 description 1
- -1 GaN Chemical class 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910005542 GaSb Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004541 SiN Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 239000002073 nanorod Substances 0.000 description 1
- 239000002071 nanotube Substances 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
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Abstract
Description
ナノワイヤ発光ダイオード(LED)は、プレーナ型LEDに代わる手段として、ますます多くの関心を集めている。ナノワイヤLEDは、従来型のプレーナ技術で製造されたLEDと比べると、ナノワイヤの3次元性に起因する独特の特性であって、より大きい基板上での処理のための格子整合の制限および機会を低減する材料の組み合わせの柔軟性を向上させる特性を示す。
実施形態は、半導体デバイスの製造方法を含み、該製造方法は、複数のナノワイヤであって各ナノワイヤが第1導電型の半導体コアと該コアの上の第2導電型の半導体シェルとを含む複数のナノワイヤを基台上に形成する工程と、絶縁材料の層を、前記絶縁材料の層の少なくとも一部が実質的に平らな上面を与えるように、前記複数のナノワイヤの少なくとも一部の上に形成する工程と、ナノワイヤの活性領域を規定するように前記絶縁材料の層の一部を除去する工程と、前記絶縁材料の層の前記実質的に平らな上面の上に電気接触を形成する工程と、を有する。
Claims (29)
- 複数のナノワイヤであって各ナノワイヤが第1導電型の半導体コアと該コアの上の第2導電型の半導体シェルとを含む複数のナノワイヤを基台上に形成する工程と、
絶縁材料の層を、前記絶縁材料の層の少なくとも一部が実質的に平らな上面を与えるように、前記複数のナノワイヤの少なくとも一部の上に形成する工程と、
ナノワイヤの活性領域を規定するように前記絶縁材料の層の一部を除去する工程と、
前記絶縁材料の層の前記実質的に平らな上面の上に電気接触を形成する工程と、を有する
ことを特徴とする半導体デバイスの製造方法。 - 前記絶縁材料の層の少なくとも一部および前記活性領域の前記複数のナノワイヤの上に導電材料の層を形成する工程をさらに有し、
前記電気接触は、前記導電材料の層に電気的に接続される
ことを特徴とする請求項1記載の半導体デバイスの製造方法。 - 前記導電材料の層は、前記活性領域の前記ナノワイヤと接触し、前記実質的に平らな上面の上で前記絶縁材料の層と接触し、
前記電気接触は、前記導電材料の上に形成される
ことを特徴とする請求項2記載の半導体デバイスの製造方法。 - 前記基台の一部が露出するようにナノワイヤおよび前記導電材料の層の一部を除去する工程と、
前記基台の前記露出された一部の上に第2の電気接触を形成する工程と、をさらに有する
ことを特徴とする請求項2記載の半導体デバイスの製造方法。 - 前記デバイスはナノワイヤLEDを含む
ことを特徴とする請求項2記載の半導体デバイスの製造方法。 - 前記第1導電型の半導体コアと前記第2導電型の半導体シェルとは、動作時に発光の活性領域を与えるpn又はpin接合を形成する
ことを特徴とする請求項5記載の半導体デバイスの製造方法。 - 前記導電材料の層は、透明な導電性酸化物(TCO)を含む
ことを特徴とする請求項5記載の半導体デバイスの製造方法。 - 前記TCOは、インジウムスズ酸化物(ITO)を含む
ことを特徴とする請求項7記載の半導体デバイスの製造方法。 - 前記絶縁材料を形成する工程は、低温酸化物(LTO)堆積プロセスを用いて前記絶縁材料を堆積する工程を含む
ことを特徴とする請求項1記載の半導体デバイスの製造方法。 - 前記絶縁材料は、約750℃より低い温度で堆積される
ことを特徴とする請求項9記載の半導体デバイスの製造方法。 - 前記絶縁材料は、化学気相成長(CVD)によって堆積される
ことを特徴とする請求項9記載の半導体デバイスの製造方法。 - 前記絶縁材料は、Al2O3またはSiO2を含む
ことを特徴とする請求項9記載の半導体デバイスの製造方法。 - 前記絶縁材料の層の一部を除去する工程は、マスクを介して前記絶縁材料の層をエッチングする工程を含む
ことを特徴とする請求項1記載の半導体デバイスの製造方法。 - 前記エッチングする工程は、前記ナノワイヤをエッチングすることなく、前記活性領域から前記絶縁材料の層を除去する
ことを特徴とする請求項13記載の半導体デバイスの製造方法。 - 前記絶縁材料はウェットエッチングされる
ことを特徴とする請求項13記載の半導体デバイスの製造方法。 - 前記絶縁材料は、フッ化水素酸溶液を用いてウェットエッチングされる
ことを特徴とする請求項15記載の半導体デバイスの製造方法。 - ナノワイヤの前記活性領域の周辺の境界を与えるように前記絶縁材料の一部を維持する工程をさらに有する
ことを特徴とする請求項1記載の半導体デバイスの製造方法。 - 前記絶縁材料の層の一部を除去する工程は、ナノワイヤの前記活性領域を規定するように第1のマスクを介して前記絶縁材料の層をエッチングする工程を含み、
前記製造方法は、
第2のマスクを介してエッチングして、前記基台の一部が露出するようにナノワイヤおよび前記導電材料の層の一部を除去する工程と、
前記デバイスの上に、前記導電材料の層の上および前記絶縁材料の層の前記平らな上面の上の第1の開口と、前記基台の前記露出された一部の上の第2の開口とを有する第3のマスクを形成する工程と、
前記導電材料の層に電気的に接続された前記電気接触を形成するように前記第1の開口に金属材料を堆積する工程と、
前記基台の前記露出された一部の上に前記第2の電気接触を形成するように前記第2の開口に金属材料を堆積する工程と、
前記第3のマスクを除去する工程と、をさらに有する
ことを特徴とする請求項3記載の半導体デバイスの製造方法。 - 前記デバイスの前記活性領域の上に、パッシベーションの層を形成する工程をさらに有する
ことを特徴とする請求項18記載の半導体デバイスの製造方法。 - 前記パッシベーションの材料は感光性エポキシを含む
ことを特徴とする請求項19記載の半導体デバイスの製造方法。 - 前記金属材料は、アルミニウム、チタンおよび金のうちの1以上を含む
ことを特徴とする請求項18記載の半導体デバイスの製造方法。 - 前記絶縁材料の層を形成する工程に先立って、第1の実質的に平らな部分を与えるように前記活性領域の外の第1の複数のナノワイヤを除去する工程をさらに有し、
前記絶縁材料の層の前記実質的に平らな上面は、前記第1の実質的に平らな部分の上に位置する
ことを特徴とする請求項3記載の半導体デバイスの製造方法。 - 第2の実質的に平らな部分を与えるように前記活性領域の外の第2の複数のナノワイヤを除去する工程をさらに有し、
前記第2の電気接触は、前記第2の実質的に平らな部分に形成される
ことを特徴とする請求項22記載の半導体デバイスの製造方法。 - 前記第1および第2の実質的に平らな部分をそれぞれ与えるように前記第1の複数のナノワイヤおよび前記第2の複数のナノワイヤを除去する工程は、第1のマスクを介して前記ナノワイヤをエッチングする工程を含み、
前記絶縁材料の層の一部を除去する工程は、ナノワイヤの前記活性領域を規定するように第2のマスクを介して前記絶縁材料の層をエッチングする工程を含み、
前記製造方法は、
前記基台の前記露出された一部を与えるように第3のマスクを介して前記導電材料の層および前記絶縁材料の層をエッチングする工程と、
前記デバイスの上に、前記絶縁材料の層の前記平らな上面の上の第1の開口と、前記基台の前記露出された一部の上の第2の開口とを有する第4のマスクを形成する工程と、
前記導電材料の層に電気的に接続された前記電気接触を形成するように前記第1の開口に金属材料を堆積する工程と
前記基台の前記露出された一部の上に前記第2の電気接触を形成するように前記第2の開口に金属材料を堆積する工程と、
前記第4のマスクを除去する工程と、をさらに有する
ことを特徴とする請求項23記載の半導体デバイスの製造方法。 - 前記デバイスの前記活性領域の上に、パッシベーションの層を形成する工程をさらに有する
ことを特徴とする請求項24記載の半導体デバイスの製造方法。 - 前記パッシベーションの材料は、エポキシベースのフォトレジストを含む
ことを特徴とする請求項25記載の半導体デバイスの製造方法。 - 前記金属材料は、アルミニウム、チタンおよび金のうちの1以上を含む
ことを特徴とする請求項24記載の半導体デバイスの製造方法。 - 基台上の複数のナノワイヤであって、各ナノワイヤが第1導電型の半導体コアと該コアの上の第2導電型の半導体シェルとを含む複数のナノワイヤと、
実質的に平らな上面を有し、ナノワイヤの活性領域を規定するように前記複数のナノワイヤの周囲の境界を形成する絶縁材料の層と、
前記絶縁材料の層の前記実質的に平らな上面の上の電気接触と、を備える
ことを特徴とする半導体デバイス。 - 請求項28記載の半導体デバイスであって、該デバイスは、請求項1から請求項27のいずれか1項に記載の方法に基づいて製造された
ことを特徴とする半導体デバイス。
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