JP2015536566A5 - - Google Patents
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- Publication number
- JP2015536566A5 JP2015536566A5 JP2015539714A JP2015539714A JP2015536566A5 JP 2015536566 A5 JP2015536566 A5 JP 2015536566A5 JP 2015539714 A JP2015539714 A JP 2015539714A JP 2015539714 A JP2015539714 A JP 2015539714A JP 2015536566 A5 JP2015536566 A5 JP 2015536566A5
- Authority
- JP
- Japan
- Prior art keywords
- nanowire
- layer
- nanowires
- led structure
- conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002070 nanowire Substances 0.000 claims 25
- 238000000034 method Methods 0.000 claims 10
- 239000000463 material Substances 0.000 claims 9
- 239000000126 substance Substances 0.000 claims 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims 3
- 239000002184 metal Substances 0.000 claims 3
- 229910004541 SiN Inorganic materials 0.000 claims 2
- 229910004298 SiO 2 Inorganic materials 0.000 claims 2
- 229910010413 TiO 2 Inorganic materials 0.000 claims 2
- 238000005240 physical vapour deposition Methods 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 claims 2
- 229910004140 HfO Inorganic materials 0.000 claims 1
- -1 SiCOH Inorganic materials 0.000 claims 1
- 229910045601 alloy Inorganic materials 0.000 claims 1
- 239000000956 alloy Substances 0.000 claims 1
- 230000007423 decrease Effects 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- 239000011810 insulating material Substances 0.000 claims 1
- 239000012212 insulator Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261718884P | 2012-10-26 | 2012-10-26 | |
| US61/718,884 | 2012-10-26 | ||
| PCT/US2013/066151 WO2014066371A1 (en) | 2012-10-26 | 2013-10-22 | Nanowire sized opto-electronic structure and method for modifying selected portions of same |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015536566A JP2015536566A (ja) | 2015-12-21 |
| JP2015536566A5 true JP2015536566A5 (enExample) | 2016-12-08 |
| JP6322197B2 JP6322197B2 (ja) | 2018-05-09 |
Family
ID=50545182
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015539714A Active JP6322197B2 (ja) | 2012-10-26 | 2013-10-22 | ナノワイヤサイズの光電構造及びその選択された部分を改質させる方法。 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US9178106B2 (enExample) |
| EP (1) | EP2912698B1 (enExample) |
| JP (1) | JP6322197B2 (enExample) |
| TW (1) | TW201427080A (enExample) |
| WO (1) | WO2014066371A1 (enExample) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102012101718B4 (de) * | 2012-03-01 | 2025-08-28 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer Halbleiterchip |
| JP6322197B2 (ja) | 2012-10-26 | 2018-05-09 | グロ アーベーＧｌｏ Ａｂ | ナノワイヤサイズの光電構造及びその選択された部分を改質させる方法。 |
| WO2014066379A1 (en) | 2012-10-26 | 2014-05-01 | Glo Ab | Nanowire sized opto-electronic structure and method for modifying selected portions of same |
| WO2014066357A1 (en) * | 2012-10-26 | 2014-05-01 | Glo Ab | Nanowire led structure and method for manufacturing the same |
| US10079331B2 (en) | 2013-03-15 | 2018-09-18 | Glo Ab | High index dielectric film to increase extraction efficiency of nanowire LEDs |
| FR3004006B1 (fr) * | 2013-03-28 | 2016-10-07 | Aledia | Dispositif electroluminescent a nanofils actifs et nanofils de contact et procede de fabrication |
| CN204138341U (zh) * | 2013-04-18 | 2015-02-04 | 崔波 | 硅衬底上的硅柱阵列 |
| US9972750B2 (en) * | 2013-12-13 | 2018-05-15 | Glo Ab | Use of dielectric film to reduce resistivity of transparent conductive oxide in nanowire LEDs |
| KR102188497B1 (ko) | 2014-03-27 | 2020-12-09 | 삼성전자주식회사 | 나노구조 반도체 발광소자 |
| DE102014107167B4 (de) | 2014-05-21 | 2022-04-21 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung eines Halbleiterbauelements mit einer Strukturschicht mit einer Mehrzahl von dreidimensionalen Strukturelementen und strahlungsemittierendes Halbleiterbauelement mit einer Strukturschicht mit einer Mehrzahl von dreidimensionalen Strukturelementen |
| DE102014117892A1 (de) * | 2014-12-04 | 2016-06-09 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement sowie optoelektronisches Bauteil |
| EP3127747A1 (fr) * | 2015-08-07 | 2017-02-08 | Valeo Vision | Dispositif d'éclairage et/ou de signalisation pour véhicule automobile |
| US10665451B2 (en) * | 2015-10-20 | 2020-05-26 | King Abdullah University Of Science And Technology | Nanowires-based light emitters on thermally and electrically conductive substrates and of making same |
| DE102015120778B4 (de) * | 2015-11-30 | 2021-09-23 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements |
| DE102016102876A1 (de) * | 2016-02-18 | 2017-08-24 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements |
| CN207396531U (zh) | 2017-01-31 | 2018-05-22 | 杭州探真纳米科技有限公司 | 一种悬臂末端纳米探针 |
| US10840223B2 (en) * | 2017-03-23 | 2020-11-17 | Intel Corporation | Augmented reality display systems with super-lambertian LED source |
| JP7007547B2 (ja) * | 2017-04-11 | 2022-01-24 | 日亜化学工業株式会社 | 発光素子の製造方法 |
| US10418499B2 (en) | 2017-06-01 | 2019-09-17 | Glo Ab | Self-aligned nanowire-based light emitting diode subpixels for a direct view display and method of making thereof |
| GB201718897D0 (en) | 2017-11-15 | 2017-12-27 | Microsoft Technology Licensing Llc | Superconductor-semiconductor fabrication |
| US10707374B2 (en) | 2017-09-15 | 2020-07-07 | Glo Ab | Etendue enhancement for light emitting diode subpixels |
| JP7137066B2 (ja) | 2018-10-23 | 2022-09-14 | 日亜化学工業株式会社 | 発光素子の製造方法 |
| US11024792B2 (en) | 2019-01-25 | 2021-06-01 | Microsoft Technology Licensing, Llc | Fabrication methods |
| KR102859951B1 (ko) | 2019-12-10 | 2025-09-15 | 삼성디스플레이 주식회사 | 발광 소자 및 이를 포함하는 표시 장치 |
| WO2021133910A1 (en) * | 2019-12-24 | 2021-07-01 | The Regents Of The University Of Michigan | Group iii-nitride excitonic heterostructures |
| FR3118290A1 (fr) * | 2020-12-17 | 2022-06-24 | Aledia | Dispositif optoélectronique à diodes électroluminescentes tridimensionnelles de type axial |
Family Cites Families (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6963086B2 (en) * | 2001-10-10 | 2005-11-08 | Sony Corporation | Semiconductor light-emitting device image display illuminator and its manufacturing method |
| US7335908B2 (en) | 2002-07-08 | 2008-02-26 | Qunano Ab | Nanostructures and methods for manufacturing the same |
| US7132677B2 (en) | 2004-02-13 | 2006-11-07 | Dongguk University | Super bright light emitting diode of nanorod array structure having InGaN quantum well and method for manufacturing the same |
| US7276389B2 (en) * | 2004-02-25 | 2007-10-02 | Samsung Electronics Co., Ltd. | Article comprising metal oxide nanostructures and method for fabricating such nanostructures |
| US20070158661A1 (en) | 2006-01-12 | 2007-07-12 | Rutgers, The State University Of New Jersey | ZnO nanostructure-based light emitting device |
| JP5483887B2 (ja) | 2006-03-08 | 2014-05-07 | クナノ アーベー | Ｓｉ上のエピタキシャルな半導体ナノワイヤの金属無しでの合成方法 |
| CA2643439C (en) | 2006-03-10 | 2015-09-08 | Stc.Unm | Pulsed growth of gan nanowires and applications in group iii nitride semiconductor substrate materials and devices |
| EP2064745A1 (en) * | 2006-09-18 | 2009-06-03 | QuNano AB | Method of producing precision vertical and horizontal layers in a vertical semiconductor structure |
| US8426224B2 (en) | 2006-12-18 | 2013-04-23 | The Regents Of The University Of California | Nanowire array-based light emitting diodes and lasers |
| JP5453105B2 (ja) * | 2006-12-22 | 2014-03-26 | クナノ アーベー | ナノ構造のｌｅｄ及びデバイス |
| CN101681813B (zh) | 2007-01-12 | 2012-07-11 | 昆南诺股份有限公司 | 氮化物纳米线及其制造方法 |
| KR101524319B1 (ko) | 2007-01-12 | 2015-06-10 | 큐나노 에이비 | 시준 리플렉터를 갖는 나노구조 ｌｅｄ 어레이 |
| US7869032B2 (en) * | 2007-04-05 | 2011-01-11 | The Board Of Trustees Of The University Of Illinois | Biosensors with porous dielectric surface for fluorescence enhancement and methods of manufacture |
| WO2008129861A1 (ja) * | 2007-04-18 | 2008-10-30 | Panasonic Corporation | 発光素子 |
| JP4954039B2 (ja) * | 2007-11-29 | 2012-06-13 | 三菱電機株式会社 | 半導体装置の製造方法 |
| JP2009147140A (ja) | 2007-12-14 | 2009-07-02 | Panasonic Corp | 発光素子および発光素子の製造方法 |
| JP5453406B2 (ja) * | 2008-06-13 | 2014-03-26 | クナノ アーベー | ナノ構造のｍｏｓコンデンサ |
| EP2297794B1 (en) * | 2008-07-07 | 2017-09-06 | Glo Ab | Nanostructured light emitting diode |
| KR20100080094A (ko) * | 2008-12-31 | 2010-07-08 | 삼성전자주식회사 | 방사형 이종접합 구조의 나노 막대를 이용한 발광 다이오드 |
| JP5763629B2 (ja) | 2009-06-26 | 2015-08-12 | カリフォルニア インスティチュート オブ テクノロジー | パッシベートされたシリコンナノワイヤーの製造方法およびこれにより得られるデバイス |
| US20110079766A1 (en) | 2009-10-01 | 2011-04-07 | Isaac Harshman Wildeson | Process for fabricating iii-nitride based nanopyramid leds directly on a metalized silicon substrate |
| KR101134493B1 (ko) | 2010-03-19 | 2012-04-13 | 삼성엘이디 주식회사 | 발광 다이오드 및 이의 제조 방법 |
| KR20130136906A (ko) | 2010-06-18 | 2013-12-13 | 글로 에이비 | 나노와이어 ｌｅｄ 구조와 이를 제조하기 위한 방법 |
| EP2586062A4 (en) | 2010-06-24 | 2015-06-03 | Glo Ab | SUBSTRATE WITH BUFFER LAYER FOR ALIGNED NANODRAHT GROWTH |
| KR101710159B1 (ko) | 2010-09-14 | 2017-03-08 | 삼성전자주식회사 | Ⅲ족 질화물 나노로드 발광소자 및 그 제조 방법 |
| US20130200391A1 (en) | 2010-09-28 | 2013-08-08 | North Carolina State University | Gallium nitride based structures with embedded voids and methods for their fabrication |
| KR20120040550A (ko) * | 2010-10-19 | 2012-04-27 | 삼성엘이디 주식회사 | 반도체 발광소자 및 그 제조방법 |
| KR20120055390A (ko) * | 2010-11-23 | 2012-05-31 | 삼성엘이디 주식회사 | 발광소자 및 그 제조방법 |
| KR20120070809A (ko) * | 2010-12-22 | 2012-07-02 | 엘지이노텍 주식회사 | 발광 소자, 및 발광 소자 패키지 |
| US8409892B2 (en) * | 2011-04-14 | 2013-04-02 | Opto Tech Corporation | Method of selective photo-enhanced wet oxidation for nitride layer regrowth on substrates |
| WO2013025874A2 (en) | 2011-08-16 | 2013-02-21 | Brightedge Technologies, Inc. | Page reporting |
| US8350249B1 (en) | 2011-09-26 | 2013-01-08 | Glo Ab | Coalesced nanowire structures with interstitial voids and method for manufacturing the same |
| EP2898547A4 (en) * | 2012-09-18 | 2016-04-27 | Glo Ab | OPTOELECTRONIC STRUCTURE IN NANOPYRAMID SIZE AND METHOD FOR THE MANUFACTURE THEREOF |
| WO2014066379A1 (en) | 2012-10-26 | 2014-05-01 | Glo Ab | Nanowire sized opto-electronic structure and method for modifying selected portions of same |
| JP6322197B2 (ja) | 2012-10-26 | 2018-05-09 | グロ アーベーＧｌｏ Ａｂ | ナノワイヤサイズの光電構造及びその選択された部分を改質させる方法。 |
| WO2014066357A1 (en) | 2012-10-26 | 2014-05-01 | Glo Ab | Nanowire led structure and method for manufacturing the same |
-
2013
- 2013-10-22 JP JP2015539714A patent/JP6322197B2/ja active Active
- 2013-10-22 US US14/059,658 patent/US9178106B2/en not_active Expired - Fee Related
- 2013-10-22 EP EP13848477.9A patent/EP2912698B1/en active Active
- 2013-10-22 WO PCT/US2013/066151 patent/WO2014066371A1/en not_active Ceased
- 2013-10-25 TW TW102138762A patent/TW201427080A/zh unknown
-
2015
- 2015-10-29 US US14/926,900 patent/US9799796B2/en active Active