JP2009033157A5 - - Google Patents

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Publication number
JP2009033157A5
JP2009033157A5 JP2008180584A JP2008180584A JP2009033157A5 JP 2009033157 A5 JP2009033157 A5 JP 2009033157A5 JP 2008180584 A JP2008180584 A JP 2008180584A JP 2008180584 A JP2008180584 A JP 2008180584A JP 2009033157 A5 JP2009033157 A5 JP 2009033157A5
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JP
Japan
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layer
semiconductor
semiconductor chip
contact
chip according
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JP2008180584A
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English (en)
Japanese (ja)
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JP2009033157A (ja
JP5079611B2 (ja
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Priority claimed from DE102007032555A external-priority patent/DE102007032555A1/de
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JP2008180584A 2007-07-12 2008-07-10 半導体チップ及び半導体チップ製造方法 Active JP5079611B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102007032555.1 2007-07-12
DE102007032555A DE102007032555A1 (de) 2007-07-12 2007-07-12 Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012188817A Division JP5876792B2 (ja) 2007-07-12 2012-08-29 半導体チップ及び半導体チップ製造方法

Publications (3)

Publication Number Publication Date
JP2009033157A JP2009033157A (ja) 2009-02-12
JP2009033157A5 true JP2009033157A5 (enExample) 2012-07-26
JP5079611B2 JP5079611B2 (ja) 2012-11-21

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JP2008180584A Active JP5079611B2 (ja) 2007-07-12 2008-07-10 半導体チップ及び半導体チップ製造方法
JP2012188817A Expired - Fee Related JP5876792B2 (ja) 2007-07-12 2012-08-29 半導体チップ及び半導体チップ製造方法

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JP2012188817A Expired - Fee Related JP5876792B2 (ja) 2007-07-12 2012-08-29 半導体チップ及び半導体チップ製造方法

Country Status (4)

Country Link
US (1) US7994519B2 (enExample)
EP (2) EP3121858A1 (enExample)
JP (2) JP5079611B2 (enExample)
DE (1) DE102007032555A1 (enExample)

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DE102007032555A1 (de) 2007-07-12 2009-01-15 Osram Opto Semiconductors Gmbh Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips
TWI404189B (zh) * 2009-02-06 2013-08-01 億光電子工業股份有限公司 複晶式發光二極體元件及其製造方法
JP2010251686A (ja) * 2009-03-26 2010-11-04 Harison Toshiba Lighting Corp 発光装置及びその製造方法
US8987772B2 (en) 2010-11-18 2015-03-24 Seoul Viosys Co., Ltd. Light emitting diode chip having electrode pad
US9520536B2 (en) 2010-11-18 2016-12-13 Seoul Viosys Co., Ltd. Light emitting diode chip having electrode pad
KR101769075B1 (ko) * 2010-12-24 2017-08-18 서울바이오시스 주식회사 발광 다이오드 칩 및 그것을 제조하는 방법
JP2014532993A (ja) * 2011-11-07 2014-12-08 コーニンクレッカ フィリップス エヌ ヴェ より一様な注入及びより少ない光学的損失を備える改善されたｐ型接点
DE102012108883A1 (de) * 2012-09-20 2014-03-20 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung von optoelektronischen Halbleiterchips
DE102013007981A1 (de) 2013-05-10 2014-11-13 Audi Ag Vorrichtung zum Erzeugen eines Impulses auf ein Fahrzeug in einer Fahrzeugquerrichtung
FR3008547B1 (fr) * 2013-07-15 2016-12-09 Commissariat Energie Atomique Structure emissive a injection laterale de porteurs
CN103594593B (zh) * 2013-11-08 2016-04-06 溧阳市江大技术转移中心有限公司 具有粗化透明电极的倒装发光二极管的制造方法
KR102131345B1 (ko) * 2014-02-07 2020-07-07 엘지이노텍 주식회사 발광소자
JP6149878B2 (ja) * 2015-02-13 2017-06-21 日亜化学工業株式会社 発光素子
DE102015102857A1 (de) * 2015-02-27 2016-09-01 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement, Verfahren zur Herstellung eines elektrischen Kontakts und Verfahren zur Herstellung eines Halbleiterbauelements
DE102015011635B4 (de) * 2015-09-11 2020-10-08 Azur Space Solar Power Gmbh lnfrarot-LED
DE102016006295A1 (de) 2016-05-27 2017-11-30 Azur Space Solar Power Gmbh Leuchtdiode
DE102017104735B4 (de) 2017-03-07 2021-09-02 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierender Halbleiterchip
DE102017002332B4 (de) 2017-03-13 2019-11-07 Azur Space Solar Power Gmbh Leuchtdiode
DE102017002333A1 (de) * 2017-03-13 2018-09-13 Azur Space Solar Power Gmbh Leuchtdiode
CN116210093B (zh) * 2020-11-04 2025-09-16 苏州晶湛半导体有限公司 谐振腔发光二极管及其制备方法
CN115483323A (zh) * 2021-05-31 2022-12-16 京东方科技集团股份有限公司 发光器件、发光基板和发光器件的制作方法

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JP2856374B2 (ja) * 1992-02-24 1999-02-10 シャープ株式会社 半導体発光素子及びその製造方法
JPH08148716A (ja) * 1994-11-15 1996-06-07 Rohm Co Ltd 半導体発光素子とその製造方法
US5977566A (en) * 1996-06-05 1999-11-02 Kabushiki Kaisha Toshiba Compound semiconductor light emitter
US6057562A (en) * 1997-04-18 2000-05-02 Epistar Corp. High efficiency light emitting diode with distributed Bragg reflector
US6078064A (en) 1998-05-04 2000-06-20 Epistar Co. Indium gallium nitride light emitting diode
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JP2003017806A (ja) * 2001-06-29 2003-01-17 Toshiba Corp 化合物半導体発光素子とその製造方法および化合物半導体発光装置
US6515308B1 (en) * 2001-12-21 2003-02-04 Xerox Corporation Nitride-based VCSEL or light emitting diode with p-n tunnel junction current injection
JP2004111648A (ja) * 2002-09-18 2004-04-08 Hamamatsu Photonics Kk 半導体発光素子
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JP4135550B2 (ja) * 2003-04-18 2008-08-20 日立電線株式会社 半導体発光デバイス
DE10346605B4 (de) * 2003-08-29 2022-02-24 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungemittierendes Halbleiterbauelement
KR100853882B1 (ko) 2003-08-29 2008-08-22 오스람 옵토 세미컨덕터스 게엠베하 방사선 방출 반도체 소자
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JP4833537B2 (ja) * 2004-10-07 2011-12-07 フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー 半導体発光素子
DE102005008056A1 (de) * 2004-12-30 2006-07-13 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterchip und Verfahren zur Herstellung eines solchen Halbleiterchips
DE102005061797B4 (de) * 2005-12-23 2020-07-09 Osram Opto Semiconductors Gmbh Lumineszenzdiodenchip mit Stromaufweitungsschicht und Verfahren zu dessen Herstellung
KR100738554B1 (ko) * 2006-01-26 2007-07-11 삼성전자주식회사 듀얼모드 단말에서의 호 처리 장치 및 방법
US7573074B2 (en) * 2006-05-19 2009-08-11 Bridgelux, Inc. LED electrode
DE102007032555A1 (de) 2007-07-12 2009-01-15 Osram Opto Semiconductors Gmbh Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips

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