JP5079611B2 - 半導体チップ及び半導体チップ製造方法 - Google Patents

半導体チップ及び半導体チップ製造方法 Download PDF

Info

Publication number
JP5079611B2
JP5079611B2 JP2008180584A JP2008180584A JP5079611B2 JP 5079611 B2 JP5079611 B2 JP 5079611B2 JP 2008180584 A JP2008180584 A JP 2008180584A JP 2008180584 A JP2008180584 A JP 2008180584A JP 5079611 B2 JP5079611 B2 JP 5079611B2
Authority
JP
Japan
Prior art keywords
layer
semiconductor
semiconductor chip
contact
current spreading
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2008180584A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009033157A (ja
JP2009033157A5 (enExample
Inventor
フェーラー ミヒャエル
シュトラウス ウーヴェ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=39720739&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JP5079611(B2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of JP2009033157A publication Critical patent/JP2009033157A/ja
Publication of JP2009033157A5 publication Critical patent/JP2009033157A5/ja
Application granted granted Critical
Publication of JP5079611B2 publication Critical patent/JP5079611B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H10H20/8162—Current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8314—Electrodes characterised by their shape extending at least partially onto an outer side surface of the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8316—Multi-layer electrodes comprising at least one discontinuous layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials

Landscapes

  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
  • Light Receiving Elements (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2008180584A 2007-07-12 2008-07-10 半導体チップ及び半導体チップ製造方法 Active JP5079611B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102007032555.1 2007-07-12
DE102007032555A DE102007032555A1 (de) 2007-07-12 2007-07-12 Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012188817A Division JP5876792B2 (ja) 2007-07-12 2012-08-29 半導体チップ及び半導体チップ製造方法

Publications (3)

Publication Number Publication Date
JP2009033157A JP2009033157A (ja) 2009-02-12
JP2009033157A5 JP2009033157A5 (enExample) 2012-07-26
JP5079611B2 true JP5079611B2 (ja) 2012-11-21

Family

ID=39720739

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2008180584A Active JP5079611B2 (ja) 2007-07-12 2008-07-10 半導体チップ及び半導体チップ製造方法
JP2012188817A Expired - Fee Related JP5876792B2 (ja) 2007-07-12 2012-08-29 半導体チップ及び半導体チップ製造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2012188817A Expired - Fee Related JP5876792B2 (ja) 2007-07-12 2012-08-29 半導体チップ及び半導体チップ製造方法

Country Status (4)

Country Link
US (1) US7994519B2 (enExample)
EP (2) EP3121858A1 (enExample)
JP (2) JP5079611B2 (enExample)
DE (1) DE102007032555A1 (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007032555A1 (de) 2007-07-12 2009-01-15 Osram Opto Semiconductors Gmbh Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips
TWI404189B (zh) * 2009-02-06 2013-08-01 億光電子工業股份有限公司 複晶式發光二極體元件及其製造方法
JP2010251686A (ja) * 2009-03-26 2010-11-04 Harison Toshiba Lighting Corp 発光装置及びその製造方法
US8987772B2 (en) 2010-11-18 2015-03-24 Seoul Viosys Co., Ltd. Light emitting diode chip having electrode pad
US9520536B2 (en) 2010-11-18 2016-12-13 Seoul Viosys Co., Ltd. Light emitting diode chip having electrode pad
KR101769075B1 (ko) * 2010-12-24 2017-08-18 서울바이오시스 주식회사 발광 다이오드 칩 및 그것을 제조하는 방법
JP2014532993A (ja) * 2011-11-07 2014-12-08 コーニンクレッカ フィリップス エヌ ヴェ より一様な注入及びより少ない光学的損失を備える改善されたｐ型接点
DE102012108883A1 (de) * 2012-09-20 2014-03-20 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung von optoelektronischen Halbleiterchips
DE102013007981A1 (de) 2013-05-10 2014-11-13 Audi Ag Vorrichtung zum Erzeugen eines Impulses auf ein Fahrzeug in einer Fahrzeugquerrichtung
FR3008547B1 (fr) * 2013-07-15 2016-12-09 Commissariat Energie Atomique Structure emissive a injection laterale de porteurs
CN103594593B (zh) * 2013-11-08 2016-04-06 溧阳市江大技术转移中心有限公司 具有粗化透明电极的倒装发光二极管的制造方法
KR102131345B1 (ko) * 2014-02-07 2020-07-07 엘지이노텍 주식회사 발광소자
JP6149878B2 (ja) * 2015-02-13 2017-06-21 日亜化学工業株式会社 発光素子
DE102015102857A1 (de) * 2015-02-27 2016-09-01 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement, Verfahren zur Herstellung eines elektrischen Kontakts und Verfahren zur Herstellung eines Halbleiterbauelements
DE102015011635B4 (de) * 2015-09-11 2020-10-08 Azur Space Solar Power Gmbh lnfrarot-LED
DE102016006295A1 (de) 2016-05-27 2017-11-30 Azur Space Solar Power Gmbh Leuchtdiode
DE102017104735B4 (de) 2017-03-07 2021-09-02 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierender Halbleiterchip
DE102017002332B4 (de) 2017-03-13 2019-11-07 Azur Space Solar Power Gmbh Leuchtdiode
DE102017002333A1 (de) * 2017-03-13 2018-09-13 Azur Space Solar Power Gmbh Leuchtdiode
CN116210093B (zh) * 2020-11-04 2025-09-16 苏州晶湛半导体有限公司 谐振腔发光二极管及其制备方法
CN115483323A (zh) * 2021-05-31 2022-12-16 京东方科技集团股份有限公司 发光器件、发光基板和发光器件的制作方法

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2856374B2 (ja) * 1992-02-24 1999-02-10 シャープ株式会社 半導体発光素子及びその製造方法
JPH08148716A (ja) * 1994-11-15 1996-06-07 Rohm Co Ltd 半導体発光素子とその製造方法
US5977566A (en) * 1996-06-05 1999-11-02 Kabushiki Kaisha Toshiba Compound semiconductor light emitter
US6057562A (en) * 1997-04-18 2000-05-02 Epistar Corp. High efficiency light emitting diode with distributed Bragg reflector
US6078064A (en) 1998-05-04 2000-06-20 Epistar Co. Indium gallium nitride light emitting diode
US6225648B1 (en) * 1999-07-09 2001-05-01 Epistar Corporation High-brightness light emitting diode
US6693352B1 (en) * 2000-06-05 2004-02-17 Emitronix Inc. Contact structure for group III-V semiconductor devices and method of producing the same
US6420732B1 (en) * 2000-06-26 2002-07-16 Luxnet Corporation Light emitting diode of improved current blocking and light extraction structure
JP3638515B2 (ja) * 2000-09-29 2005-04-13 株式会社東芝 垂直共振器型半導体発光素子
JP2003017806A (ja) * 2001-06-29 2003-01-17 Toshiba Corp 化合物半導体発光素子とその製造方法および化合物半導体発光装置
US6515308B1 (en) * 2001-12-21 2003-02-04 Xerox Corporation Nitride-based VCSEL or light emitting diode with p-n tunnel junction current injection
JP2004111648A (ja) * 2002-09-18 2004-04-08 Hamamatsu Photonics Kk 半導体発光素子
JP2003282946A (ja) * 2003-02-06 2003-10-03 Matsushita Electric Ind Co Ltd 発光ダイオード装置及びその製造方法
JP4135550B2 (ja) * 2003-04-18 2008-08-20 日立電線株式会社 半導体発光デバイス
DE10346605B4 (de) * 2003-08-29 2022-02-24 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungemittierendes Halbleiterbauelement
KR100853882B1 (ko) 2003-08-29 2008-08-22 오스람 옵토 세미컨덕터스 게엠베하 방사선 방출 반도체 소자
US7009215B2 (en) * 2003-10-24 2006-03-07 General Electric Company Group III-nitride based resonant cavity light emitting devices fabricated on single crystal gallium nitride substrates
US7808011B2 (en) * 2004-03-19 2010-10-05 Koninklijke Philips Electronics N.V. Semiconductor light emitting devices including in-plane light emitting layers
JP2005268601A (ja) * 2004-03-19 2005-09-29 Sumitomo Chemical Co Ltd 化合物半導体発光素子
JP4833537B2 (ja) * 2004-10-07 2011-12-07 フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー 半導体発光素子
DE102005008056A1 (de) * 2004-12-30 2006-07-13 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterchip und Verfahren zur Herstellung eines solchen Halbleiterchips
DE102005061797B4 (de) * 2005-12-23 2020-07-09 Osram Opto Semiconductors Gmbh Lumineszenzdiodenchip mit Stromaufweitungsschicht und Verfahren zu dessen Herstellung
KR100738554B1 (ko) * 2006-01-26 2007-07-11 삼성전자주식회사 듀얼모드 단말에서의 호 처리 장치 및 방법
US7573074B2 (en) * 2006-05-19 2009-08-11 Bridgelux, Inc. LED electrode
DE102007032555A1 (de) 2007-07-12 2009-01-15 Osram Opto Semiconductors Gmbh Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips

Also Published As

Publication number Publication date
EP3121858A1 (de) 2017-01-25
JP5876792B2 (ja) 2016-03-02
JP2012256933A (ja) 2012-12-27
EP2015372A2 (de) 2009-01-14
US7994519B2 (en) 2011-08-09
EP2015372B1 (de) 2016-10-19
EP2015372A3 (de) 2013-02-06
DE102007032555A1 (de) 2009-01-15
JP2009033157A (ja) 2009-02-12
US20090045426A1 (en) 2009-02-19

Similar Documents

Publication Publication Date Title
JP5079611B2 (ja) 半導体チップ及び半導体チップ製造方法
TWI381545B (zh) 光電半導體晶片
US7649193B2 (en) Semiconductor body and semiconductor chip comprising a semiconductor body
US8415656B2 (en) Light emitting device with trenches and a top contact
KR101590204B1 (ko) 복사 방출 반도체칩
US9705045B2 (en) Light emitting diode having distributed bragg reflectors (DBR) and manufacturing method thereof
JP4907842B2 (ja) 平面全方位リフレクタを有する発光ダイオード
US8710537B2 (en) Radiation-emitting semiconductor chip and method for producing a radiation-emitting semiconductor chip
US20050023549A1 (en) Semiconductor light emitting devices
CN103765616B (zh) 发光二极管芯片
JP2009524918A (ja) 光電式半導体チップ
US8710486B2 (en) Optoelectronic semiconductor chip and method for manufacturing a contact structure for such a chip
CN110100319B (zh) 光电子半导体芯片和用于制造光电子半导体芯片的方法
JP2005175462A (ja) 半導体発光素子及びその製造方法
KR20130044909A (ko) 발광소자 및 그 제조방법
US10910538B2 (en) Optoelectronic semiconductor component and method for producing an optoelectronic semiconductor component
US20240204141A1 (en) Light emitting diode and light emitting device
JP2006287223A (ja) 放射放出半導体チップおよびこの形式の半導体チップに対する半導体基体の製造方法
US20240372040A1 (en) Optoelectronic semiconductor chip and method for manufacturing the same
TW202501847A (zh) 發光元件
KR102153123B1 (ko) 발광소자 및 이를 구비한 발광소자 패키지
KR101550951B1 (ko) 발광소자

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20110216

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120607

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20120725

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20120731

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20120829

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150907

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Ref document number: 5079611

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250