JP2014532993A - より一様な注入及びより少ない光学的損失を備える改善されたp型接点 - Google Patents
より一様な注入及びより少ない光学的損失を備える改善されたp型接点 Download PDFInfo
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- JP2014532993A JP2014532993A JP2014539445A JP2014539445A JP2014532993A JP 2014532993 A JP2014532993 A JP 2014532993A JP 2014539445 A JP2014539445 A JP 2014539445A JP 2014539445 A JP2014539445 A JP 2014539445A JP 2014532993 A JP2014532993 A JP 2014532993A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
- H01L33/18—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
Abstract
Description
Claims (20)
- n型層と、
p型層と、
前記n型層及び前記p型層の間の発光層と、
前記n型層に結合するためのn型パッドと、
前記p型層に結合するためのp型パッドと、
前記p型層を通る電流注入を促進するよう前記p型層に前記p型パッドを結合するp型接点層とを有する発光装置であって、
前記p型接点が、前記p型接点の少なくとも1つの電流阻止領域において前記p型層を通る電流注入を阻止するよう構成される発光装置。 - 前記電流阻止領域が、前記p型接点の、前記電流阻止領域がない場合に最大電流注入を供給する領域に対応する請求項1に記載の発光装置。
- 前記電流阻止領域が、前記p型接点の周囲に対応する請求項1に記載の発光装置。
- 前記電流阻止領域が、前記p型層のイオン注入領域を含む請求項1に記載の発光装置。
- 前記p型接点が銀を含む請求項4に記載の発光装置。
- 前記電流阻止領域が、前記p型層における抵抗性コーティングを含む請求項1に記載の発光装置。
- 前記p型層における前記抵抗性コーティングが実質的に透明である請求項6に記載の発光装置。
- 前記電流阻止領域が、前記p型接点の金属被覆の曲率半径より大きい曲率半径を持つ湾曲したコーナーを含む請求項1に記載の発光装置。
- 前記電流阻止領域が、前記p型接点の、前記n型パッド及び前記n型層の間の接触領域に最も近い領域に対応する請求項1に記載の発光装置。
- 前記p型接点が、前記p型層との抵抗接点を改善する材料を含み、前記電流阻止領域が、この材料の不在に対応する請求項1に記載の発光装置。
- 前記抵抗接点を改善する材料が、NiOを含む請求項9に記載の発光装置。
- n型層及びp型層の間に活性領域を含む発光素子を作成するステップと、
前記p型層にp型接点を設けるステップであって、前記p型接点が、前記p型接点から前記p型層へ非一様な電流の流れを供給するように前記p型層に結合されるステップと、
外部電源との結合を容易にするよう前記p型接点に結合されるp型パッドを設けるステップと、
前記外部電源との結合を容易にするよう前記n型層に結合されるn型パッドを設けるステップとを有する方法であって、
前記非一様な電流の流れが、前記p型接点の少なくとも1つの電流阻止領域を作成することによって供給される方法。 - 前記方法が、前記電流阻止領域を作成するよう前記p型層を抵抗性材料でコーティングするステップを含む請求項12に記載の方法。
- 前記方法が、前記電流阻止領域を作成するよう前記p型層にイオンを注入するステップを含む請求項12に記載の方法。
- 前記p型接点が銀を含む請求項14に記載の方法。
- 前記電流阻止領域が、前記p型接点の周囲に対応する請求項12に記載の方法。
- 前記電流阻止領域が、前記p型接点の金属被覆の曲率半径より大きい曲率半径を持つ湾曲したコーナーを含む請求項12に記載の方法。
- 前記電流阻止領域が、前記p型接点の、前記n型パッド及び前記n型層の間の接触領域に最も近い領域に対応する請求項12に記載の方法。
- 前記p型接点及び前記p型層の間に抵抗接点を改善する材料を設けるステップと、前記電流阻止領域を形成するようその材料を省くステップとを含む請求項12に記載の方法。
- 前記抵抗接点を改善する材料が、NiOを含む請求項19に記載の方法。
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US201161556343P | 2011-11-07 | 2011-11-07 | |
US61/556,343 | 2011-11-07 | ||
PCT/IB2012/055970 WO2013068878A1 (en) | 2011-11-07 | 2012-10-29 | Improved p-contact with more uniform injection and lower optical loss |
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JP2017102265A Active JP6383050B2 (ja) | 2011-11-07 | 2017-05-24 | より一様な注入及びより少ない光学的損失を備える改善されたpコンタクト |
JP2018146112A Active JP6772225B2 (ja) | 2011-11-07 | 2018-08-02 | より一様な注入及びより少ない光学的損失を備える改善されたpコンタクト |
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JP2018146112A Active JP6772225B2 (ja) | 2011-11-07 | 2018-08-02 | より一様な注入及びより少ない光学的損失を備える改善されたpコンタクト |
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US (2) | US9312437B2 (ja) |
EP (1) | EP2745333B8 (ja) |
JP (3) | JP2014532993A (ja) |
KR (1) | KR102107863B1 (ja) |
CN (1) | CN103918092B (ja) |
TW (2) | TWI631730B (ja) |
WO (1) | WO2013068878A1 (ja) |
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EP2745333B8 (en) | 2011-11-07 | 2018-09-05 | Lumileds Holding B.V. | Improved p-contact with more uniform injection and lower optical loss |
KR102332839B1 (ko) | 2015-01-29 | 2021-11-30 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광 소자 및 발광 소자 패키지 |
JP6160726B2 (ja) * | 2015-04-27 | 2017-07-12 | 日亜化学工業株式会社 | 発光装置 |
JP6260640B2 (ja) * | 2015-05-22 | 2018-01-17 | 日亜化学工業株式会社 | 発光素子 |
KR102501181B1 (ko) * | 2016-06-14 | 2023-02-17 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 반도체 소자 |
US20180287027A1 (en) | 2017-03-30 | 2018-10-04 | Vuereal Inc. | Vertical solid-state devices |
US11600743B2 (en) | 2017-03-30 | 2023-03-07 | Vuereal Inc. | High efficient microdevices |
US11721784B2 (en) | 2017-03-30 | 2023-08-08 | Vuereal Inc. | High efficient micro devices |
CN111653653B (zh) * | 2020-06-17 | 2021-10-22 | 京东方科技集团股份有限公司 | 一种发光器件及其制作方法、显示面板 |
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JP2017183742A (ja) | 2017-10-05 |
TW201801350A (zh) | 2018-01-01 |
US20160197240A1 (en) | 2016-07-07 |
TWI631730B (zh) | 2018-08-01 |
CN103918092B (zh) | 2020-10-27 |
EP2745333B8 (en) | 2018-09-05 |
EP2745333A1 (en) | 2014-06-25 |
US9312437B2 (en) | 2016-04-12 |
US20140264430A1 (en) | 2014-09-18 |
TW201327906A (zh) | 2013-07-01 |
JP6383050B2 (ja) | 2018-08-29 |
JP2019033258A (ja) | 2019-02-28 |
JP6772225B2 (ja) | 2020-10-21 |
CN103918092A (zh) | 2014-07-09 |
US9583679B2 (en) | 2017-02-28 |
KR102107863B1 (ko) | 2020-05-08 |
EP2745333B1 (en) | 2017-12-13 |
KR20140097287A (ko) | 2014-08-06 |
TWI611596B (zh) | 2018-01-11 |
WO2013068878A1 (en) | 2013-05-16 |
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