JP5197186B2 - 半導体発光装置 - Google Patents
半導体発光装置 Download PDFInfo
- Publication number
- JP5197186B2 JP5197186B2 JP2008170967A JP2008170967A JP5197186B2 JP 5197186 B2 JP5197186 B2 JP 5197186B2 JP 2008170967 A JP2008170967 A JP 2008170967A JP 2008170967 A JP2008170967 A JP 2008170967A JP 5197186 B2 JP5197186 B2 JP 5197186B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- dot
- type semiconductor
- electrode
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 54
- 239000000758 substrate Substances 0.000 claims description 18
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 230000002269 spontaneous effect Effects 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 97
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 54
- 239000002184 metal Substances 0.000 description 25
- 229910052751 metal Inorganic materials 0.000 description 25
- 238000002310 reflectometry Methods 0.000 description 10
- 238000012360 testing method Methods 0.000 description 9
- 238000005253 cladding Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 208000023514 Barrett esophagus Diseases 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical group [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
Description
また、n側電極4としては、Ti/Al/Ni/Au等の積層金属膜を用いることが出来る。
雰囲気:酸素:窒素=8:2、
処理時間:1分。
ピールテストは、基板上に1nm〜3nmの膜厚のドット状Ni膜を成膜した後、200nmのAg層を成膜してNi/Ag電極サンプルを作製し、スクライバー等で100箇所(1mm角)にケガキをいれて、Ni/Ag電極部のみを分割し、セロテープ(登録商標)(JIS Z1522)を貼り付け、はがした際に、100箇所中何箇所が剥がれたかをカウントすることにより行った。
ピールテストで用いたサンプルを用い、表面の反射率を測定した。測定はハロゲンランプ光源をφ5mmの円形領域に照射し、サンプルからの反射強度を測定することで行った。また、反射率はAg単層膜を蒸着成膜したときの反射強度を100として求めた。
Claims (4)
- 基板上に設けられたn型半導体層と、前記n型半導体層上に設けられ、自然放出光を発光する活性層と、前記活性層上に設けられたp型半導体層と、前記半導体基板の裏面または前記n型半導体層上に設けられ、前記活性層及び前記p型半導体層と離隔して設けられたn電極と、前記p型半導体層上に設けられたp電極とを具備し、前記活性層からの発光を前記基板側から外部に取り出す半導体発光素子において、
前記p電極がドット状NiO層と、このドット状NiO層上に形成された反射オーミックAg層を含むことを特徴とする半導体発光素子。 - 前記ドット状NiO層は、1nm以上、3nm以下の膜厚を有することを特徴とする請求項1に記載の半導体発光素子。
- 前記ドット状NiO層は、p電極の全面積に対し、50%以上、85%以下の面積率を有することを特徴とする請求項1または2に記載の半導体発光素子。
- 基板上に設けられたn型半導体層と、前記n型半導体層上に設けられ、自然放出光を発光する活性層と、前記活性層上に設けられたp型半導体層と、前記半導体基板の裏面または前記n型半導体層上に設けられ、前記活性層及び前記p型半導体層と離隔して設けられたn電極と、前記p型半導体層上に設けられたp電極とを具備し、前記活性層からの発光を前記基板側から外部に取り出す半導体発光素子の製造方法において、
前記p電極は、ドット状Ni層を形成する工程、このドット状Ni層上に反射オーミックAg層を形成する工程、及び350℃以上、600℃未満の温度で、酸素を含む雰囲気中で熱処理して前記ドット状Ni層の一部をドット状NiOに変換する工程により形成されることを特徴とする半導体発光素子の製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008170967A JP5197186B2 (ja) | 2008-06-30 | 2008-06-30 | 半導体発光装置 |
US12/408,806 US8093608B2 (en) | 2008-06-30 | 2009-03-23 | Semiconductor light-emitting device |
US13/238,818 US8384109B2 (en) | 2008-06-30 | 2011-09-21 | Semiconductor light-emitting device |
US13/705,342 US8648377B2 (en) | 2008-06-30 | 2012-12-05 | Semiconductor light-emitting device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008170967A JP5197186B2 (ja) | 2008-06-30 | 2008-06-30 | 半導体発光装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011209816A Division JP5646423B2 (ja) | 2011-09-26 | 2011-09-26 | 半導体発光装置及びその製造方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2010010591A JP2010010591A (ja) | 2010-01-14 |
JP2010010591A5 JP2010010591A5 (ja) | 2011-08-18 |
JP5197186B2 true JP5197186B2 (ja) | 2013-05-15 |
Family
ID=41446287
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008170967A Active JP5197186B2 (ja) | 2008-06-30 | 2008-06-30 | 半導体発光装置 |
Country Status (2)
Country | Link |
---|---|
US (3) | US8093608B2 (ja) |
JP (1) | JP5197186B2 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011258993A (ja) * | 2011-09-26 | 2011-12-22 | Toshiba Corp | 半導体発光装置及びその製造方法 |
US8648377B2 (en) | 2008-06-30 | 2014-02-11 | Kabushiki Kaisha Toshiba | Semiconductor light-emitting device |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100327300A1 (en) * | 2009-06-25 | 2010-12-30 | Koninklijke Philips Electronics N.V. | Contact for a semiconductor light emitting device |
JP5132739B2 (ja) | 2010-09-06 | 2013-01-30 | 株式会社東芝 | 半導体素子 |
JP2012094630A (ja) * | 2010-10-26 | 2012-05-17 | Toshiba Corp | 半導体発光素子 |
US9312437B2 (en) * | 2011-11-07 | 2016-04-12 | Koninklijke Philips N.V. | P-contact with more uniform injection and lower optical loss |
JP5792694B2 (ja) * | 2012-08-14 | 2015-10-14 | 株式会社東芝 | 半導体発光素子 |
US10256368B2 (en) * | 2012-12-18 | 2019-04-09 | Sk Siltron Co., Ltd. | Semiconductor substrate for controlling a strain |
WO2015099640A1 (en) * | 2013-12-23 | 2015-07-02 | Colgate-Palmolive Company | Film compositions for oral use |
JP7137070B2 (ja) * | 2018-12-03 | 2022-09-14 | 日本電信電話株式会社 | 窒化物半導体光電極の製造方法 |
CN110047982B (zh) * | 2019-02-27 | 2020-07-07 | 华灿光电(苏州)有限公司 | 发光二极管、外延片及其制备方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69433926T2 (de) * | 1993-04-28 | 2005-07-21 | Nichia Corp., Anan | Halbleitervorrichtung aus einer galliumnitridartigen III-V-Halbleiterverbindung |
JP3620926B2 (ja) * | 1995-06-16 | 2005-02-16 | 豊田合成株式会社 | p伝導形3族窒化物半導体の電極及び電極形成方法及び素子 |
JPH1187772A (ja) | 1997-09-01 | 1999-03-30 | Showa Denko Kk | 半導体発光素子用の電極 |
JP2000294837A (ja) | 1999-04-05 | 2000-10-20 | Stanley Electric Co Ltd | 窒化ガリウム系化合物半導体発光素子 |
JP4239508B2 (ja) | 2002-08-01 | 2009-03-18 | 日亜化学工業株式会社 | 発光素子 |
KR100624411B1 (ko) * | 2003-08-25 | 2006-09-18 | 삼성전자주식회사 | 질화물계 발광소자 및 그 제조방법 |
JP2005116794A (ja) | 2003-10-08 | 2005-04-28 | Mitsubishi Cable Ind Ltd | 窒化物半導体発光素子 |
KR100799857B1 (ko) * | 2003-10-27 | 2008-01-31 | 삼성전기주식회사 | 전극 구조체 및 이를 구비하는 반도체 발광 소자 |
JP2005244207A (ja) | 2004-01-30 | 2005-09-08 | Showa Denko Kk | 窒化ガリウム系化合物半導体発光素子 |
JP2006024750A (ja) | 2004-07-08 | 2006-01-26 | Matsushita Electric Ind Co Ltd | 発光素子 |
KR100657909B1 (ko) * | 2004-11-08 | 2006-12-14 | 삼성전기주식회사 | 화합물 반도체 소자의 전극 형성방법 |
JP4787562B2 (ja) | 2005-07-29 | 2011-10-05 | 昭和電工株式会社 | pn接合型発光ダイオード |
KR100725610B1 (ko) | 2006-04-18 | 2007-06-08 | 포항공과대학교 산학협력단 | 오믹 전극 형성 방법 및 반도체 발광 소자 |
JP5197186B2 (ja) | 2008-06-30 | 2013-05-15 | 株式会社東芝 | 半導体発光装置 |
JP5132739B2 (ja) | 2010-09-06 | 2013-01-30 | 株式会社東芝 | 半導体素子 |
-
2008
- 2008-06-30 JP JP2008170967A patent/JP5197186B2/ja active Active
-
2009
- 2009-03-23 US US12/408,806 patent/US8093608B2/en active Active
-
2011
- 2011-09-21 US US13/238,818 patent/US8384109B2/en active Active
-
2012
- 2012-12-05 US US13/705,342 patent/US8648377B2/en active Active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8648377B2 (en) | 2008-06-30 | 2014-02-11 | Kabushiki Kaisha Toshiba | Semiconductor light-emitting device |
JP2011258993A (ja) * | 2011-09-26 | 2011-12-22 | Toshiba Corp | 半導体発光装置及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JP2010010591A (ja) | 2010-01-14 |
US8093608B2 (en) | 2012-01-10 |
US8384109B2 (en) | 2013-02-26 |
US20090321714A1 (en) | 2009-12-31 |
US8648377B2 (en) | 2014-02-11 |
US20130092898A1 (en) | 2013-04-18 |
US20120007047A1 (en) | 2012-01-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5197186B2 (ja) | 半導体発光装置 | |
EP2763192B1 (en) | Nitride semiconductor element and method for producing same | |
JP2006191072A (ja) | 凹凸構造を含む発光素子及びその製造方法 | |
JP2007157852A (ja) | 半導体発光素子およびその製造方法 | |
JP2019207925A (ja) | 半導体発光素子および半導体発光素子の製造方法 | |
US20050142820A1 (en) | Method of manufacturing gallium nitride based semiconductor light emitting device | |
JP2005191575A (ja) | 窒化ガリウム系発光ダイオードの構造とその製造方法 | |
JP2005354040A (ja) | 半導体発光素子およびその製法 | |
JP5130436B2 (ja) | GaN系半導体発光素子及びその製造方法 | |
JP2002016286A (ja) | 半導体発光素子 | |
JP5289791B2 (ja) | 窒化物半導体発光装置及びその製造方法 | |
JPH11298040A (ja) | 半導体発光素子及びその製造方法 | |
JP2005033207A (ja) | 電極層、これを具備する発光素子及び電極層の製造方法 | |
JP5646423B2 (ja) | 半導体発光装置及びその製造方法 | |
JP5784176B2 (ja) | 半導体発光素子の製造方法 | |
JP2014175338A (ja) | 半導体発光素子及びその製造方法 | |
JP2015032798A (ja) | 窒化物半導体発光素子の製造方法 | |
JP2013062535A (ja) | 半導体発光装置及びその製造方法 | |
JP2015153827A (ja) | 半導体発光素子及びその製造方法 | |
KR101059563B1 (ko) | III - V 족 GaN 계 화합물 반도체의 전극층 제조방법 | |
JP7448782B2 (ja) | 窒化物半導体素子の製造方法 | |
KR102051477B1 (ko) | 반도체 발광소자의 제조방법 | |
WO2014034762A1 (ja) | 窒化物半導体素子 | |
JPH11330558A (ja) | 窒化物半導体発光素子 | |
JP2003273401A (ja) | 発光半導体素子用透光性電極およびその作製方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20110323 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110630 |
|
A871 | Explanation of circumstances concerning accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A871 Effective date: 20110630 |
|
A975 | Report on accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A971005 Effective date: 20110720 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110726 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110926 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20111018 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20121207 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130205 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20160215 Year of fee payment: 3 |
|
R151 | Written notification of patent or utility model registration |
Ref document number: 5197186 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20160215 Year of fee payment: 3 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |