TWI631730B - 發光裝置及其製造方法 - Google Patents
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Abstract
藉由在與護板相鄰之區域中刻意地抑制電流通過一半導體裝置之p層來修改跨p層之電流分佈,而不減小該裝置之任何部分之光學反射率。可藉由增加沿接觸區域之邊緣及在接觸區域之隅角中耦合至p接觸件之p層之電阻而抑制此電流。在一例示性實施例中,在產生p接觸件之後藉由淺劑量的氫離子(H+
)植入物產生高電阻區域。類似地,可在該p接觸件與該p層之間之選擇區域中塗覆一電阻性塗層。
Description
本發明係關於半導體發光裝置之領域,且特定言之係關於用於改良提取效率並提供跨該裝置之發光區域之一更均勻電流分佈之技術。
對半導體發光裝置之需求的大幅增加及為滿足需求之對應競爭增加導致製造商尋求將減小成本或改良效能之技術。尤其注意,改良經發射光之效率或品質之技術可用以區分一競爭者的產品與其他競爭者的產品。 圖1圖解說明諸如在頒予給Daniel A. Steigerwald、Jerome C. Bhat及Michael J. Ludowise且以引用方式併入本文之標題為「CONTACTING SCHEME FOR LARGE AND SMALL AREA SEMICONDUCTOR LIGHT EMITTING FLIp-CHIP DEVICES」之USP 6,828,596中揭示之一例示性先前技術薄膜覆晶(TFFC)InGaN發光裝置(LED)。 在此例示性裝置中,在一n層110與一p層130之間形成一發光層120。一外部電源(未圖解說明)經由連接至襯墊160及170而提供電力給該裝置。p襯墊160透過抑制p接觸件材料之遷移之一選用防護層150經由一p接觸件140耦合至該p層130。在此實例中,n接觸件層170直接耦合至n層110。一邊界層180使該n接觸件層170及該n層110與該p層130及該p接觸件140隔離。 該p接觸件140經提供於一大區域上方以促進通過該p層130之電流之一均勻分佈,該p層130對電流具有一相對較高的抵抗性。該n層110並未展現一高電阻,且因此該n接觸件覆蓋一較小的面積,該面積可為裝置面積之10%或更小。該p接觸件140較佳具有高度反射性以使光反射朝向該發光裝置之頂部發射表面。通常將銀用作該p接觸件140。n接觸層亦具有反射性且諸如鋁之金屬係較佳的。該防護層150可為金屬的,但僅具有部分反射性,此係因為尚未發現針對此應用之合適高度反射性金屬。此部分反射性護板填充與p接觸件相鄰之區域,從而導致p接觸件周邊處之較高光學損失。 發明者已認知,在p接觸件之約15微米周邊內產生之光極有可能進入該防護層區域150且在有機會離開裝置之前遭受光學吸收。因此,在該p接觸件之邊緣處注入之電流將展現低於在該p接觸件之中心區域處注入之電流之一外部量子效率。 儘管該裝置之邊緣及隅角之光學損失更大,但是發明者亦已注意到在周邊處及隅角中產生的經發射光多於在裝置之中心處產生的經發射光,此係因為與通過n接觸層之橫向電流相關聯、組合垂直電流對接面電壓之指數相依性之電壓降在該裝置之邊緣處及隅角中提供顯著較高電流密度。此等相對較高注入電流產生一輕微暈輪效應,其中在該裝置之隅角中具有明亮區域。 除潛在地引入光學異常以外,此一非均勻電流注入型樣係無效率的,因為對於較高電流密度,內部量子效率較低。發光裝置之「過發射」部分(尤其隅角)將亦成為汲取裝置中之更多電流之「熱點」,已觀察到該等「熱點」導致在高電流下操作之裝置之過早故障。
有利的是,光發射區域遠離部分反射防護層且進一步改良經注入電流密度光發射跨作用層之表面之均勻性。 為更好地解決此等擔憂及其他擔憂,在本發明之一實施例中,藉由在與護板相鄰之區域中刻意地抑制電流通過一半導體裝置之p層來修改跨p層之電流分佈,而不減小該裝置之任何部分之光學反射率。可藉由增加沿接觸區域之邊緣或在接觸區域之隅角中耦合至p接觸件之p層之電阻而抑制此電流。在一例示性實施例中,在產生p接觸件之後藉由淺劑量的氫離子(H+
)植入物產生高電阻區域。類似地,可在p接觸件與p層之間之選擇區域中塗覆一電阻性塗層。
參考隨附圖式進一步詳細地且藉由實例解釋本發明。 貫穿該等圖式,相同的參考數字指示類似或對應的特徵或功能。該等圖式針對闡釋性目的而包含且並不旨在限制本發明之範疇。 在以下描述中,為解釋而非限制之目的,陳述諸如特定架構、介面、技術等等之特定細節以提供對本發明之概念之全面理解。然而,熟習此項技術者應明白,本發明可在脫離此等特定細節之其他實施例中實踐。以類似方式,本發明之正文係關於如該等圖式中圖解說明之例示性實施例,且不旨在於明確包含在申請專利範圍中之限制之外限制本發明。為簡潔及明瞭之目的,省略已知裝置、電路及方法之詳細描述以免使本發明之描述與不必要的細節混淆。 為便於圖解及理解,在圖1之例示性先前技術裝置之背景內容下呈現本發明。然而,熟習此項技術者將認知,本發明之一些或全部原理可應用於多種不同的LED結構或將獲利於藉由與一低損失電流注入區域相鄰之一吸收區域產生之光學損失減小之任何結構。 如上提及,圖1之發光裝置(在圖2及圖3中重複該裝置之結構)包含提供通過p層130之電流之一更均勻分佈之一高度反射大面積p接觸件140。n層110與n襯墊170之間之接觸係沿該n層110之周邊。一邊界層180將n型元件110、170與p型元件130、140、150分離。 如圖2中圖解說明,當經由n襯墊170及p襯墊160連接至一外部源時,來自該n襯墊170之電子電流200透過n層110橫向擴散,橫越該邊界層180且繼續向下朝向該p接觸件140及該p襯墊160。因為跨該n層110之電流分佈並非完全均勻且因為距該p接觸件140之周邊及電流源200之距離短於距該p接觸件140之中心之距離,所以至該p接觸件140之周邊之電流200a將大於至該p接觸件140之中心之電流200b。取決於幾何形狀(隅角對邊緣)、n-GaN薄片電阻(厚度及摻雜)及操作條件(電流、溫度),電流注入200之大部分電流200a可集中在該p接觸件140之邊界附近。因此,通過作用層120之p-n接面之電流注入在該作用層120之周邊周圍將更大,從而在該周邊處產生一更高光發射。 除藉由此非均勻光發射引起的潛在不良光學效應以外,此非均勻性亦潛在地減小總體光提取效率,此係因為較高的光發射發生於其中光學損失最大的區域中。在發光作用層120之中心處,大部分經發射光將最終直接或經由來自該p接觸層140之反射而離開該發光裝置之頂表面。自該作用層120之中心以相對於頂表面成銳角發射之光(側光)離開該裝置之頂表面之可能性將大於來自其他區域之此光,此係因為來自該中心之光在離開頂表面之前較不可能遭遇一光吸收特徵,諸如邊界層180。相反地,沿該作用層120之周邊,遭遇該邊界層180之可能性明顯較高,使得光學損失對應地增加。 除與非均勻電流相關聯之光學問題以外,較大電流200a亦產生降低能帶隙並汲取更多電流之一「熱點」,從而導致該裝置中之區域易於產生故障。 此外,不均勻電流注入至發光區域中亦減小總體晶片內部量子效率(IQE;每個經注入電子發射之光子數目之比率),因為該IQE隨著電流密度增加而降低(在先前技術中稱為「IQE衰減」)。 在本發明之一實施例中,如圖3A至圖3B中圖解說明,在p接觸件140之周邊區域310中抑制電洞電流注入,圖3B係圖3A之裝置之一橫截面A-A'。此電洞電流注入抑制區域310可藉由使用(例如)淺低劑量的H+
植入物或減小或阻斷此區域中之電流之其他方式形成。可在沈積銀以形成p接觸件140之後使用一光阻圖案執行此一植入以形成區域310,該區域310經後續處理以產生電流抑制區域310。用於此目的之足夠能量及劑量取決於Ag厚度,但是15 keV能量及2e14 cm-2
的劑量係標稱值。植入p層中大於50 nm深度處之高能量及高劑量將在該p層中產生過度損壞且增加光學吸收。 如圖3C中圖解說明,亦可使用在周邊處抑制電流流動至p層130之其他方式,諸如用一電阻性材料310'(諸如一介電質或其他不良導電透明材料)塗佈該p接觸件140之周邊。p接觸層140可在介電層310'之邊緣上向上延伸而與310'重疊達至少5 mm之程度,從而在重疊區域中產生一高度反射Ag介電鏡面。 如藉由圖3A中之電流300a、300b圖解說明,藉由抑制該區域310中之電流,源電流300被迫橫向轉向進一步通過該n層110。由於自該p接觸件140之周邊橫向轉向,電流300a在到達該p接觸件140之前流動通過該n層110遠於圖2中之電流200a,且對應地將減小量值。周邊處之此電流量值減小將減小與高電流200a相關聯之「熱點」,且將減小由高電流200a引起的過早故障之可能性。 與圖2中之電流200b相比,該p接觸件140之周邊處之電流減小將對應地提供流動至發光層210之中心之電流300b之增加。對於圖2及圖3中之相同總電流量,總體效應係圖3之發光層120之一更均勻激發,其提供來自圖3之裝置之一更均勻光輸出。 此外,藉由使電流橫向偏移而遠離p接觸件140之周邊,光發射區域之邊緣經重新定位遠離吸收防護區域150,藉此減小此區域150所損失的光量。 可期望在p接觸層之外部隅角320處維持儘可能小之曲率半徑,以在發光層120下方提供一最大反射區域,藉此最小化任何經背向散射光之損失。然而,在一習知裝置中,小曲率半徑最大化該裝置之隅角320中之電流集聚,從而在隅角處引起更大局部熱點。亦可藉由將該抑制區域310之內部隅角330修圓而達成局部熱點之可能性之減小。藉由在隅角320處具有小曲率半徑之一p接觸件上隅角330處產生較大曲率半徑之一電流抑制區域,維持光學效率並減輕熱點。 雖然該等圖式及前述描述中已詳細地圖解說明並描述本發明,但是此圖解及描述被視為闡釋性或例示性而非限制性;本發明並不限於所揭示之實施例。 例如,可藉由使一接觸增強層(諸如NiO)位於其中期望增強接觸之Ag接觸件之區域下方及消除其中並不期望增強之區域中之此層而操作本發明。此實施例可結合Mg摻雜之減小或典型p接觸件中之其他損傷以減小Ag-GaN接觸件之有效性。 從對圖式、本揭示內容及隨附申請專利範圍之一研究,熟習此項技術者在實踐本發明時可瞭解且實現所揭示之實施例之其他變動。在申請專利範圍中,字詞「包括」並不排除其他元件或步驟,且不定冠詞「一」或「一個」並不排除複數個。某些措施敘述在相互不同的附屬請求項中之純粹事實並不表示不可有利地使用此等措施之組合。申請專利範圍中之任何參考符號不應被解釋為限制範疇。
110‧‧‧n層/n型元件
120‧‧‧發光作用層/發光層
130‧‧‧p層/p型元件
140‧‧‧p接觸件/p型元件/p接觸層
150‧‧‧防護層/防護層區域/p型元件/吸收防護區域
160‧‧‧p襯墊
170‧‧‧n接觸層/n襯墊
180‧‧‧邊界層
200‧‧‧電子電流/電流注入
200a‧‧‧電流
200b‧‧‧電流
300‧‧‧源電流
300a‧‧‧電流
300b‧‧‧電流
310‧‧‧周邊區域/電洞電流注入抑制區域
310'‧‧‧電阻性材料/介電層
320‧‧‧外部隅角
330‧‧‧內部隅角
圖1圖解說明一例示性先前技術發光裝置。 圖2圖解說明該例示性發光裝置中之電流分佈。 圖3A至圖3B圖解說明具有包含一高電阻區域及一低電阻區域以改良電流分佈之一p接觸件之一例示性發光裝置。 圖3C圖解說明圖3A之一替代。
Claims (18)
- 一種製造發光裝置之方法,其包括:產生一發光元件,該發光元件包括介於一n層與一p層之間之一作用區域;將一p接觸件提供給該p層,該p接觸件耦合至該p層;藉由在該p接觸件之一周邊使用一淺(shallow)低劑量離子佈植(ion implantation)產生一電流抑制區域,其中該電流抑制區域將一非均勻電流自該p接觸件提供給該p層;提供耦合至該p接觸件之一p襯墊以促進耦合至一外部電源;及提供耦合至該n層之一n襯墊以促進耦合至該外部電源。
- 如請求項1之方法,其中該p接觸件包含銀。
- 如請求項1之方法,其中該電流抑制區域對應於該p接觸件之一周邊。
- 如請求項1之方法,其中該電流抑制區域對應於該p接觸件最靠近該n襯墊與該n層之間之一接觸區域之一區域。
- 如請求項1之方法,其中該電流抑制區域包含一曲率半徑大於該p接觸件之一曲率半徑之彎曲隅角(corners)。
- 一種製造發光裝置之方法,其包括:產生一發光元件,該發光元件包括介於一n層與一p層之間之一作用區域;將一p接觸件提供給該p層,該p接觸件耦合至該p層;藉由提供改良該p接觸件之一中心之歐姆接觸之一材料並自該p接觸件之一周邊省略該材料以產生一電流抑制區域,其中該電流抑制區域將一非均勻電流自該p接觸件提供給該p層;提供耦合至該p接觸件之一p襯墊以促進耦合至一外部電源;及提供耦合至該n層之一n襯墊以促進耦合至該外部電源。
- 如請求項6之方法,其中改良歐姆接觸之該材料包含NiO。
- 一種發光裝置,其包括:一n層;一p層;一發光層,其介於該n層與該p層之間;一n襯墊,其用於耦合至該n層,該n層與該n襯墊之間之一接觸區域係沿該n層之一周邊;一p襯墊,其用於耦合至該p層;及一p接觸件,其將該p襯墊耦合至該p層以促進電流注入通過該p層,該p襯墊係經由該p接觸件及一部分反射防護層(guard layer)耦合至該p層,該部分反射防護層抑制p接觸件材料之遷移並填充與該p接觸件相鄰之一區域,其中該p接觸件經組態以在該p接觸件之至少一電流抑制區域中抑制電流注入通過該p層,且該至少一電流抑制區域包含該p接觸件之一離子注入區域且可用於改良通過該發光層之電流注入之均勻性。
- 如請求項8之發光裝置,其中該電流抑制區域對應於在不存在電流抑制區域下提供最大電流注入之該p接觸件之一周邊。
- 如請求項8之發光裝置,其中該p接觸件包含銀。
- 如請求項8之發光裝置,其中該電流抑制區域對應於該p接觸件最靠近該n襯墊與該n層之間之該接觸區域之一區域。
- 如請求項8之發光裝置,其中該電流抑制區域包含一曲率半徑大於該p接觸件之一曲率半徑之彎曲隅角。
- 如請求項8之發光裝置,其中該p接觸件之該電流抑制區域可用於改良通過該發光層之電流注入之均勻性。
- 一種發光裝置,其包括:一n層;一p層;一發光層,其介於該n層與該p層之間;一n襯墊,其用於耦合至該n層;一p襯墊,其用於耦合至該p層;及一p接觸件,其將該p襯墊耦合至該p層以促進一電流注入通過該p層,該p接觸件具有在該p接觸件之一周邊之一電流抑制區域,該電流抑制區域包含介於該p接觸件與該p層之間之一實質上透明電阻性塗層,且該p接觸件經組態以反射該發光層所發射之光。
- 如請求項14之發光裝置,其中該p接觸件之該電流抑制區域可用於改良通過該發光層之該電流注入之均勻性。
- 一種發光裝置,其包括:一n層;一p層;一發光層,其介於該n層與該p層之間;一n襯墊,其用於耦合至該n層;一p襯墊,其用於耦合至該p層;及一p接觸件,其將該p襯墊耦合至該p層以促進一電流注入通過該p層,該p接觸件具有在該p接觸件之一周邊之一電流抑制區域,該p接觸件包含可改良該p接觸件之一中心之歐姆接觸之一材料,該電流抑制區域缺乏(absent from)該材料。
- 如請求項16之發光裝置,其中改良歐姆接觸之該材料包含NiO。
- 如請求項16之發光裝置,其中該p接觸件之該電流抑制區域可用於改良通過該發光層之該電流注入之均勻性。
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