CN103918092B - 具有更均匀注入和更低光学损耗的改进的p接触 - Google Patents
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Abstract
通过在毗邻保护片(150)的区域(310)中故意抑制电流流动通过p层(130)来调适跨过半导体器件的p层(130)的电流分布,而不减小器件的任何部分的光学反射率。通过增大沿着接触区域的边缘以及在拐角耦合到p接触(140)的p层的电阻,可以抑制此电流流动。在示例实施例中,在p接触(130)形成之后,通过浅剂量的氢离子(H+)注入产生高电阻区域(130)。类似地,可以在p接触和p层之间的选定区域中应用电阻性涂层。
Description
技术领域
本发明涉及半导体发光器件的领域,并且具体地涉及用于改进提取效率以及提供跨过器件的发光区域的更均匀电流分布的技术。
背景技术
对半导体发光器件需求的显著增大以及为了满足需求的竞争的相应增大已经致使制造商寻求将减小成本或改进性能的技术。特别指出,改进所发射光的效率或质量的技术可以用于将一个竞争者的产品与其它竞争者的产品区分开。
图1图示示例现有技术薄膜倒装芯片(TFFC)InGaN发光器件(LED),其诸如公开于授权给Daniel A. Steigerwald, Jerome C. Bhat和Michael J. Ludowise并且通过引用结合于此的USP6,828,596,"CONTACTING SCHEME FOR LARGE AND SMALL AREASEMICONDUCTOR LIGHT EMITTING FLIp-CHIP DEVICES"。
在此示例器件中,发光层120形成于n层110和p层130之间。外部电源(未图示)经由与焊盘160和170的连接而提供电力到器件。p焊盘160经由p接触140,通过可选的保护层150而耦合到p层130,该保护层抑制p接触材料的迁移。在此示例中,n接触层170直接耦合到n层110。边界层180将n接触层170和n层110与p层130和p接触140隔离。
p接触140在大面积上被提供以促进通过p层130的电流的均匀分布,p层130对于电流流动具有相对更高的电阻。n层110不表现高电阻,并且因此n接触覆盖更小的面积,此面积可以是器件面积的10%或更小。p接触140优选地是高反射性的,从而将光反射到发光器件的顶部发射表面。银通常被用作p接触140。n接触层也是反射性的并且诸如铝的金属是优选的。保护层150可以是金属性的,但是为仅仅部分反射性的,因为还没有发现用于此应用的合适的高反射性金属。这种部分反射性的保护片填充毗邻p接触的区域,导致在p接触外围的更高光学损耗。
发明人已经意识到,在p接触的外围大约15微米之内产生的光会高可能性地进入保护层区域150并且在有机会离开器件之前遭受光学吸收。因此,与在p接触的中心区域处注入的电流相比,在p接触的边缘注入的电流将表现更低的外量子效率。
尽管器件的边缘和拐角的光学损耗更大,发明人也注意到与在器件的中心处相比,在外围处以及在拐角中产生更多的发射光,这是因为与通过n接触层的电流的横向流动关联的电压降落以及竖直电流流动与结电压的指数依存性相组合,在器件的边缘处和拐角中提供显著更高的电流密度。这些比较高的注入电流形成轻微的晕轮效应,在器件的拐角中具有明亮的区域。
除了潜在地引入光学异常,这种不均匀电流注入模式是低效率的,因为对于更高的电流密度,内量子效率更低。发光器件的'过发射(over-emitting)'部分,特别是拐角,也将是在器件中汲取更多电流的'热点(hot-spot)',所述热点已经被观察到引起在高电流工作的器件的过早失效。
发明内容
使光发射区域远离部分反射性保护层并且进一步改进跨过有源层表面的所注入电流密度光发射的均匀性,这将会是有利的。
为了更好解决这些以及其它关注事宜,在本发明的实施例中,通过在毗邻保护片的区域中故意抑制电流流动通过p层来调适跨过半导体器件的p层的电流分布,而不减小器件的任何部分的光学反射率。通过增大沿着接触区域的边缘以及在拐角耦合到p接触的p层的电阻,可以抑制此电流流动。在示例实施例中,在p接触形成之后,通过浅剂量的氢离子(H+)注入产生高电阻区域。类似地,可以在p接触和p层之间的选定区域中应用电阻性涂层。
附图说明
参考附图而更详细并且通过示例方式来解释本发明,在附图中:
图1图示示例现有技术发光器件。
图2图示示例发光器件中的电流分布。
图3A-3B图示示例发光器件,该示例发光器件的p接触包括高电阻区域和低电阻区域以改进电流分布。
图3C图示图3A的可替换方案。
在所有附图中,相同的附图标记表示相似或相应的特征或功能。附图被包括以用于图示目的并且不旨在限制本发明的范围。
具体实施方式
在下述说明书中,出于解释而非限制的目的而给出诸如具体架构、接口、技术等的特定细节,从而提供对本发明构思的彻底理解。然而,本领域技术人员将清楚,本发明可以在背离这些特定细节的其它实施例中实践。按照类似方式,此说明书的文字是针对如各图所图示的示例实施例,并且不旨在超出权利要求书中明确包括的限制而限制所要求保护的发明。出于简化和清楚的目的,对公知器件、电路和方法的详细描述被省略从而不由于不必要的细节而使本发明的说明书变得模糊。
为了容易图示和理解,在图1的示例现有技术器件的上下文中呈现本发明。然而本领域技术人员将认识到,本发明的一些或全部原理可以适用于各种不同LED结构,或者将从由毗邻低损耗电流注入区域的吸收区域形成的光学损耗减小受益的任何结构。
如上文指出,图1的发光器件包括高反射性的大面积p接触140,该p接触提供通过p层130的电流的更均匀分布,其中该发光器件的结构在图2和3中被重复。n层110和n焊盘170之间的接触是沿着n层110的周界。边界层180将n型元件110、180与p型元件130、140、150分离。
如图2所图示,当经由n焊盘170和p焊盘160连接到外部源时,来自n焊盘170的电子电流200横向传播通过n层110,跨过边界层180并且朝向p接触140和p焊盘160继续向下。由于跨过n层110的电流分布不是完全均匀的,并且由于距电流源200以及p接触140的周界的距离小于距p接触140的中心的距离,到p接触140的周界的电流流动200a将大于到p接触140的中心的电流流动200b。取决于几何形状(拐角相对于边缘)、n-GaN薄层电阻(厚度和掺杂)以及工作条件(电流、温度),电流注入200的相当大份额200a会集中在p接触140的边界附近。因此,在有源层120的外围附近,通过有源层120的p-n结的电流注入将更大,在外围形成更高的光发射。
除了由这种不均匀光发射造成的潜在负面光学效应,这种不均匀性潜在地减小整体光提取效率,这是因为在光学损耗最大的区域中出现更高的光发射。在发光有源层120的中心,大多数的发射光将或者直接地,或者经由从p接触层140的反射而最终离开发光器件的顶表面。相对于顶表面以锐角从有源层120的中心发射的光(侧光)离开器件顶表面的可能性大于来自其它区域的这种光,这是因为从中心开始,在离开顶表面之前遇到诸如边界层180的光吸收特征的可能性更小。相反地,沿着有源层120的周界,遇到边界层180的可能性显著更高,光学损耗相应增大。
除了与不均匀电流流动关联的光学问题之外,更大的电流流动200a形成减小带隙并且汲取甚至更多电流的“热点”,导致在器件中形成容易失效的区域。
附加地,不均匀电流注入到发光区域中也减小整体芯片内量子效率(IQE;每注入一个电子的发射光子数目的比例),这是因为IQE随着电流密度增大而减小(本领域中已知为"IQE下降")。
在本发明的实施例中,空穴电流注入在p接触140的外围区域310中被抑制,如图3A-3B所图示,图3B为图3A的器件的截面A-A'。此空穴电流注入抑制区域310可以通过下述形成:例如,使用浅的低剂量H+注入,或者减小或阻断此区域中的电流流动的其它手段。这种注入可以在银沉积以形成p接触140之后进行,使用光致抗蚀剂图案以形成区域310,所述区域随后被加工以形成电流抑制区域310。用于此目的的充足的能量和剂量取决于Ag厚度,不过15keV的能量和2e14 cm-2的剂量为标称值。高剂量以及在p层中注入深于50nm的高能量将在p层中形成过多损伤并且增大光学吸收。
也可以使用在外围抑制电流流动到p层130的其它手段,诸如利用电阻性材料310'(诸如电介质或其它导电性不佳的透明材料)涂敷p接触140的外围,如图3C所图示。p接触层140会在电介质层310’的边缘上交叠310’至少5μm的范围而迅速移动,在交叠的区域中形成高反射性Ag电介质镜。
通过在区域310中抑制电流流动,源电流300被迫横向改道更远而通过n层110,如图3A中电流流动300a、300b所图示。由于从p接触140的外围的横向改道,与图2中的电流200a相比,电流300a在到达p接触140之前流动得更远而通过n层110,并且将相应地减小幅值。在外围的这种电流幅值减小将减小与高电流200a关联的'热点',并且将减小由高电流200a造成的过早失效的可能性。
与图2中的电流200b相比,在p接触140外围的电流减小将相应地提供流动到发光层120的中心的电流300b的增大。整体效应在于,对于图2和3中相同数量的总电流,图3的发光层120的激励更均匀,这从图3的器件提供更均匀光输出。
附加地,通过横向地将电流偏移远离p接触140的外围,光发射区域的边缘被远离吸收保护区域150重定位,由此减小损失到此区域150的光的量。
期望在p接触层的外拐角320处维持尽可能小的曲率半径,从而在发光层120下方提供最大反射性区域,藉此最小化任何背散射光的损耗。然而,在常规器件中,小的曲率半径使器件的拐角320中的电流拥挤最大化,在拐角造成甚至更大的局部热点。通过将抑制区域310的内拐角330变圆,也可以实现局部热点可能性的减小。通过在于拐角320处具有小曲率半径的p接触层上形成于拐角330处具有更大曲率半径的电流抑制区域,光学效率被维持,并且热点减轻。
尽管本发明已经在附图和前述说明书中予以详细图示和描述,这种图示和描述被认为是图示性或示例性的并且不是限制性的;本发明不限于所公开的实施例。
例如,有可能通过下述来操作本发明:使诸如NiO的接触增强层位于Ag接触的期望增强接触的区域下方,并且在不期望增强的区域中消除此层。此实施例可以与典型p接触中Mg掺杂减小或其它削弱组合以降低Ag-GaN接触的有效性。
通过研究附图、公开内容以及所附权利要求,本领域技术人员在实践所要求保护的发明时可以理解和达成所公开的实施例的其它变型。在权利要求中,措词"包括"不排除其它元件或步骤,并且不定冠词"一"不排除多个。在互不相同的从属权利要求中陈述某些措施的纯粹事实不表示不能有利地使用这些措施的组合。权利要求中的任何附图标记不应解读为限制范围。
Claims (9)
1.一种发光器件,包括:
n层,
p层,
位于n层和p层之间的发光层,
电气耦合到n层的n焊盘,n层和n焊盘之间的接触是沿着n层的周界,
电气耦合到p层的p焊盘,以及
p接触,该p接触电气耦合在p焊盘与p层之间,p焊盘经由p接触和部分反射保护层电气耦合到p层,该部分反射保护层抑制p接触材料的迁移并且填充毗邻p接触的区域,
p接触配置成在p接触的周界处在p接触的至少一个电流抑制区域中抑制电流注入通过p层,并且所述至少一个电流抑制区域包括该p接触的离子注入区域并且用于改进通过该发光层的电流注入的均匀性,并且
该电流抑制区域包括内弧形拐角,并且该p接触包括外弧形拐角,该内弧形拐角的曲率半径大于该外弧形拐角的曲率半径。
2.如权利要求1所述的发光器件,其中该电流抑制区域对应于该p接触的一区域,该区域在不存在该电流抑制区域的情况下提供最大电流注入。
3.如权利要求1所述的发光器件,其中该p接触包括银。
4.如权利要求1所述的发光器件,其中该电流抑制区域对应于该p接触的最靠近n焊盘和n层之间的接触区域的区域。
5.一种用于形成发光器件的方法,包括:
形成发光元件,其包括n层和p层之间的发光层;
将p接触耦合到p层从而提供从该p接触到该p层的不均匀电流流动;
将p焊盘耦合到p接触以促进耦合到外部电源;
经由p接触和部分反射保护层将p焊盘耦合到p层,该部分反射保护层抑制p接触材料的迁移,该部分反射保护层填充毗邻p接触的区域;
将n焊盘耦合到n层以促进耦合到外部电源,n层和n焊盘之间的接触是沿着n层的周界;以及
在p接触的周界处形成该p接触的至少一个电流抑制区域;
其中该电流抑制区域包括内弧形拐角,并且该p接触包括外弧形拐角,该内弧形拐角的曲率半径大于该外弧形拐角的曲率半径。
6.如权利要求5所述的用于形成发光器件的方法,其中该p接触包括银。
7.如权利要求5所述的用于形成发光器件的方法,还包括在p层中植入离子以形成电流拟制区域。
8.如权利要求5所述的用于形成发光器件的方法,其中该电流抑制区域对应于该p接触的最靠近n焊盘和n层之间的接触区域的区域。
9.如权利要求5所述的用于形成发光器件的方法,其中p接触的电流抑制区域用于改进通过该发光层的电流注入的均匀性。
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