JP5776021B2 - 窒化物系半導体素子及び光源 - Google Patents
窒化物系半導体素子及び光源 Download PDFInfo
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- JP5776021B2 JP5776021B2 JP2012509293A JP2012509293A JP5776021B2 JP 5776021 B2 JP5776021 B2 JP 5776021B2 JP 2012509293 A JP2012509293 A JP 2012509293A JP 2012509293 A JP2012509293 A JP 2012509293A JP 5776021 B2 JP5776021 B2 JP 5776021B2
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- 239000004065 semiconductor Substances 0.000 title claims description 226
- 150000004767 nitrides Chemical class 0.000 title claims description 72
- 239000010410 layer Substances 0.000 claims description 414
- 239000000758 substrate Substances 0.000 claims description 81
- 238000010438 heat treatment Methods 0.000 claims description 48
- 229910052751 metal Inorganic materials 0.000 claims description 34
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- 239000000203 mixture Substances 0.000 claims description 9
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- 238000004519 manufacturing process Methods 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
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- 150000002739 metals Chemical class 0.000 description 8
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- 229910052757 nitrogen Inorganic materials 0.000 description 7
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- 230000004888 barrier function Effects 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 6
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- 238000010586 diagram Methods 0.000 description 5
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- 230000006866 deterioration Effects 0.000 description 4
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- 229910052738 indium Inorganic materials 0.000 description 4
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
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- 229910002704 AlGaN Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000005275 alloying Methods 0.000 description 2
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- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910017937 Ag-Ni Inorganic materials 0.000 description 1
- 229910017984 Ag—Ni Inorganic materials 0.000 description 1
- MHYQBXJRURFKIN-UHFFFAOYSA-N C1(C=CC=C1)[Mg] Chemical compound C1(C=CC=C1)[Mg] MHYQBXJRURFKIN-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910001252 Pd alloy Inorganic materials 0.000 description 1
- 229910001260 Pt alloy Inorganic materials 0.000 description 1
- 229910000629 Rh alloy Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 238000003917 TEM image Methods 0.000 description 1
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
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- 229910052797 bismuth Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
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- 238000000313 electron-beam-induced deposition Methods 0.000 description 1
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- 238000002474 experimental method Methods 0.000 description 1
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- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
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- 230000005701 quantum confined stark effect Effects 0.000 description 1
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- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 238000005987 sulfurization reaction Methods 0.000 description 1
- 229910019655 synthetic inorganic crystalline material Inorganic materials 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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Description
図11は、本実施形態の窒化物系半導体発光素子100aを示す断面図である。m面から1°以上の角度で傾斜した面を主面とするp型半導体領域を形成するため、本実施形態に係る窒化物系半導体発光素子100aは、m面から1°以上の角度で傾斜した面を主面とするGaN系基板10aを用いている。主面がm面から1°以上の角度で傾斜している基板は、一般に「オフ基板」と称される。オフ基板は、単結晶インゴットから基板をスライスし、基板の表面を研磨する工程で、意図的にm面から特定方位に傾斜した面を主面とするように作製され得る。このGaN系基板10a上に、半導体積層構造20aを形成する。図11に示す半導体層22a、24a、26aは主面がm面から1°以上の角度で傾斜している。これは傾斜した基板の主面上に、各種半導体層が積層されると、これらの半導体層の表面(主面)もm面から傾斜するからである。GaN系基板10aの代わりに、例えば、m面から特定方向に傾斜した面を表面とするサファイア基板やSiC基板を用いてもよい。また、本実施形態の構成においては、半導体積層構造20aのうち、少なくとも電極(p型電極)30aと接触するp型半導体領域の表面がm面から1°以上の角度で傾斜していればよい。
11 光取り出し面
12、12a 基板の表面(m面)
20、20a 半導体積層構造
22、22a AluGavInwN層
24、24a 活性層
26、26a AldGaeN層
30 電極
30A、30B、30C 電極
32 Mg層
34 Ag層
40、40a 電極
42、42a 凹部
50 保護電極
51 保護層
52 開口
61A、61C Mg-Ag合金層
100、100a 窒化物系半導体発光素子
200 波長を変換する蛍光体が分散された樹脂層
220 支持部材
240 反射部材
Claims (16)
- p型GaN系半導体領域を有する窒化物系半導体積層構造と、
前記p型GaN系半導体領域上に設けられた電極と
を備え、
前記p型GaN系半導体領域における主面の法線とm面の法線とが形成する角度が1°以上5°以下であり、
前記電極は、前記p型GaN系半導体領域の前記主面に接触したMg層と、前記Mg層の上に形成されたAg層とを含み、
前記Mg層中のN濃度はGa濃度よりも低い、
窒化物系半導体素子。 - p型GaN系半導体領域を有する窒化物系半導体積層構造と、
前記p型GaN系半導体領域上に設けられた電極と
を備え、
前記p型GaN系半導体領域における主面の法線とm面の法線とが形成する角度が1°以上5°以下であり、
前記電極は、前記p型GaN系半導体領域の前記主面に接触したMg−Ag合金層と、前記Mg−Ag合金層の上に形成されたAg層とを含み、
前記Mg−Ag合金層中のN濃度はGa濃度よりも低い、
窒化物系半導体素子。 - p型GaN系半導体領域を有する窒化物系半導体積層構造と、
前記p型GaN系半導体領域上に設けられた電極と
を備え、
前記p型GaN系半導体領域における主面の法線とm面の法線とが形成する角度が1°以上5°以下であり、
前記電極は、前記p型GaN系半導体領域の前記主面に接触した合金層のみから構成され、
前記合金層は、MgおよびAgから形成されており、
前記合金層中のN濃度はGa濃度よりも低い、
窒化物系半導体素子。 - 前記p型GaN系半導体領域は、AlxInyGazN(x+y+z=1,x≧0,y≧0,z≧0)半導体から形成される、請求項1から3のいずれか1つに記載の窒化物系半導体素子。
- 前記Ag層は、Agとは異なる金属からなる保護電極で覆われている、請求項1または2のいずれか1つに記載の窒化物系半導体素子。
- 前記Ag層は、誘電体からなる保護層で覆われている、請求項1または2のいずれか1つに記載の窒化物系半導体素子。
- 前記窒化物系半導体積層構造は、AlaInbGacN層(a+b+c=1,a≧0,b≧0,c≧0)を含む活性層を有し、前記活性層は光を発する、請求項1から6の何れか一つに記載の窒化物系半導体素子。
- 前記p型GaN系半導体領域は、p型コンタクト層である、請求項1から7の何れか一つに記載の窒化物系半導体素子。
- 前記Mg層の厚さは前記Ag層の厚さ以下である、請求項1に記載の窒化物系半導体素子。
- 前記窒化物系半導体積層構造を支持する半導体基板を有している、請求項1から9の何れか一つに記載の窒化物系半導体素子。
- 前記p型GaN系半導体領域はGaNである、請求項1から10の何れか一つに記載の窒化物系半導体素子。
- 前記Mg層および前記Ag層の少なくとも一部が合金化している、請求項1に記載の窒化物系半導体素子。
- 前記Mg層はアイランド状である請求項1に記載の窒化物系半導体素子。
- 窒化物系半導体発光素子と、
前記窒化物系半導体発光素子から放射された光の波長を変換する蛍光物質を含む波長変換部と
を備える光源であって、
前記窒化物系半導体発光素子は、請求項1に記載の窒化物系半導体素子である、
光源。 - 前記合金層は、前記p型GaN系半導体領域の前記主面に接触するMg層と、前記Mg層の上に位置するAg層とを形成した後、熱処理を行うことにより形成された層である、請求項3に記載の窒化物系半導体素子。
- 前記合金層は、MgとAgとの混合物または化合物を、前記p型GaN系半導体領域の前記主面上に蒸着した後、加熱処理を行なうことにより形成された層である、請求項3に記載の窒化物系半導体素子。
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