JP4568379B1 - 窒化物系半導体素子およびその製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 215
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 67
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- 229910002601 GaN Inorganic materials 0.000 description 143
- 125000004429 atom Chemical group 0.000 description 15
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 125000004433 nitrogen atom Chemical group N* 0.000 description 10
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- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
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- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 1
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- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
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- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
- H01S5/04257—Electrodes, e.g. characterised by the structure characterised by the configuration having positive and negative electrodes on the same side of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
- H01S5/320225—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth polar orientation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
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Abstract
【選択図】図3
Description
10a 光取り出し面
12 基板の表面(m面)
20 半導体積層構造
22 AluGavInwN層
24 活性層
26 AldGaeN層
30 p型電極
30A、30B、30C p型電極
32 Mg層
34 Ag層
40 n型電極
42 凹部
50 保護電極
51 保護層
52 開口
61A、61C Mg-Ag合金層
100 窒化物系半導体発光素子
200 波長を変換する蛍光体が分散された樹脂層
220 支持部材
240 反射部材
Claims (26)
- 表面がm面であるp型半導体領域を有する窒化物系半導体積層構造と、
前記p型半導体領域上に設けられた電極と
を備え、
前記p型半導体領域は、AlxInyGazN(x+y+z=1,x≧0,y≧0,z≧0)半導体から形成され、
前記電極は、前記p型半導体領域の前記表面に接触したMg層と、前記Mg層の上に形成されたAg層とを含む、窒化物系半導体素子。 - 前記Ag層は、Agとは異なる金属からなる保護電極で覆われている、請求項1に記載の窒化物系半導体素子。
- 前記Ag層は、誘電体からなる保護層で覆われている、請求項1に記載の窒化物系半導体素子。
- 前記半導体積層構造は、
AlaInbGacN層(a+b+c=1,a≧0,b≧0,c≧0)を含む活性層を有し、前記活性層は光を発する、請求項1に記載の窒化物系半導体素子。 - 前記p型半導体領域は、p型コンタクト層である、請求項1に記載の窒化物系半導体素子。
- 前記Mg層の厚さは前記Ag層の厚さ以下である、請求項1に記載の窒化物系半導体素子。
- 前記Mg層中のN濃度はGa濃度よりも低い、請求項1に記載の窒化物系半導体素子。
- 前記半導体積層構造を支持する半導体基板を有している、請求項1に記載の窒化物系半導体素子。
- 前記p型半導体領域はGaNである、請求項1に記載の窒化物系半導体素子。
- 前記Mg層および前記Ag層の少なくとも一部が合金化している、請求項1に記載の窒化物系半導体素子。
- 窒化物系半導体発光素子と、
前記窒化物系半導体発光素子から放射された光の波長を変換する蛍光物質を含む波長変換部と
を備える光源であって、
前記窒化物系半導体発光素子は、
表面がm面であるp型半導体領域を有する窒化物系半導体積層構造と、
前記p型半導体領域上に設けられた電極と
を備え、
前記p型半導体領域は、AlxInyGazN(x+y+z=1,x≧0,y≧0,z≧0)半導体からなり、
前記電極は、前記p型半導体領域の前記表面に接触したMg層と、前記Mg層の上に形成されたAg層とを含む、光源。 - 前記p型半導体領域はGaNである、請求項11に記載の光源。
- 前記Mg層および前記Ag層の少なくとも一部が合金化している、請求項11に記載の光源。
- 基板を用意する工程(a)と、
表面がm面であるp型半導体領域を有する窒化物系半導体積層構造を前記基板上に形成する工程(b)と、
前記半導体積層構造の前記p型半導体領域の前記表面上に電極を形成する工程(c)とを含み、
前記工程(c)は、
前記p型半導体領域の前記表面上に、Mg層を形成する工程と、
前記Mg層の上にAg層を形成する工程とを含む、窒化物系半導体素子の製造方法。 - 前記工程(c)において、前記Mg層を加熱処理する工程を実行する、請求項14に記載の窒化物系半導体素子の製造方法。
- 前記加熱処理は、500℃以上700℃以下の温度で実行される、請求項15に記載の窒化物系半導体素子の製造方法。
- 前記加熱処理は、550℃以上600℃以下の温度で実行される、請求項16に記載の窒化物系半導体素子の製造方法。
- 前記Mg層を形成する工程は、パルス的に電子ビームを照射することによってMgを前記p型半導体領域の前記表面の上に蒸着させることを実行する、請求項14から17の何れか一つに記載の窒化物系半導体素子の製造方法。
- 前記工程(b)を実行した後において、前記基板を除去する工程を含む、請求項14から18の何れか一つに記載の窒化物系半導体素子の製造方法。
- 前記p型半導体領域はGaNである、請求項14に記載の窒化物系半導体素子の製造方法。
- 前記Mg層および前記Ag層の少なくとも一部が合金化している、請求項15に記載の窒化物系半導体素子の製造方法。
- 表面がm面であるp型半導体領域を有する窒化物系半導体積層構造と、
前記p型半導体領域上に設けられた電極と
を備え、
前記p型半導体領域は、AlxInyGazN(x+y+z=1,x≧0,y≧0,z≧0)半導体から形成され、
前記電極は、前記p型半導体領域の前記表面上に形成されたアイランド状Mgと、前記アイランド状Mgの上に形成されたAg層とを含む、窒化物系半導体素子。 - 表面がm面であるp型半導体領域を有する窒化物系半導体積層構造と、
前記p型半導体領域上に設けられた電極と
を備え、
前記p型半導体領域は、AlxInyGazN(x+y+z=1,x≧0,y≧0,z≧0)半導体から形成され、
前記電極は、前記p型半導体領域の前記表面に接触したMg層と、前記Mg層の上に形成されたAg層とを含み、
前記Mg層は、Mg-Ag合金から形成されている、窒化物系半導体素子。 - 表面がm面であるp型半導体領域を有する窒化物系半導体積層構造と、
前記p型半導体領域上に設けられた電極と
を備え、
前記p型半導体領域は、AlxInyGazN(x+y+z=1,x≧0,y≧0,z≧0)半導体から形成され、
前記電極は、前記p型半導体領域の前記表面に接触した合金層のみから構成され、
前記合金層は、MgおよびAgから形成されている、窒化物系半導体素子。 - 前記合金層は、前記p型半導体領域の前記表面に接触するMg層と、前記Mg層の上に位置するAg層とを形成した後、熱処理を行うことにより形成された層である、請求項24に記載の窒化物系半導体素子。
- 前記合金層は、MgとAgとの混合物または化合物を、前記p型半導体領域の前記表面上に蒸着した後、加熱処理を行なうことにより形成された層である、請求項24に記載の窒化物系半導体素子。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009091506 | 2009-04-03 | ||
JP2009091506 | 2009-04-03 | ||
PCT/JP2009/007265 WO2010113237A1 (ja) | 2009-04-03 | 2009-12-25 | 窒化物系半導体素子およびその製造方法 |
JPPCT/JP2009/007265 | 2009-12-25 | ||
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JP5776021B2 (ja) * | 2010-04-02 | 2015-09-09 | パナソニックIpマネジメント株式会社 | 窒化物系半導体素子及び光源 |
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JP5232338B2 (ja) * | 2011-04-08 | 2013-07-10 | パナソニック株式会社 | 窒化物系半導体素子およびその製造方法 |
US8890175B2 (en) | 2011-04-08 | 2014-11-18 | Panasonic Corporation | Nitride-based semiconductor element and method for fabricating the same |
WO2013005391A1 (ja) * | 2011-07-06 | 2013-01-10 | パナソニック株式会社 | 窒化物半導体発光素子およびその製造方法 |
JP5373230B2 (ja) * | 2011-07-06 | 2013-12-18 | パナソニック株式会社 | 窒化物半導体発光素子およびその製造方法 |
US9076928B2 (en) | 2012-05-30 | 2015-07-07 | Samsung Electronics Co., Ltd. | Semiconductor light emitting device and method for manufacturing the same |
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JPWO2010113405A1 (ja) | 2012-10-04 |
WO2010113405A1 (ja) | 2010-10-07 |
CN102007576B (zh) | 2012-11-07 |
US20130015427A1 (en) | 2013-01-17 |
WO2010113237A1 (ja) | 2010-10-07 |
US8299490B2 (en) | 2012-10-30 |
US8318594B2 (en) | 2012-11-27 |
CN102007576A (zh) | 2011-04-06 |
US20110253976A1 (en) | 2011-10-20 |
EP2352165A4 (en) | 2012-11-14 |
EP2352165B1 (en) | 2016-05-11 |
US20110037088A1 (en) | 2011-02-17 |
EP2352165A1 (en) | 2011-08-03 |
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