JP2011529277A5 - - Google Patents

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Publication number
JP2011529277A5
JP2011529277A5 JP2011520319A JP2011520319A JP2011529277A5 JP 2011529277 A5 JP2011529277 A5 JP 2011529277A5 JP 2011520319 A JP2011520319 A JP 2011520319A JP 2011520319 A JP2011520319 A JP 2011520319A JP 2011529277 A5 JP2011529277 A5 JP 2011529277A5
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JP
Japan
Prior art keywords
semiconductor chip
optoelectronic semiconductor
current spreading
spreading layer
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2011520319A
Other languages
English (en)
Japanese (ja)
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JP2011529277A (ja
JP5514819B2 (ja
Filing date
Publication date
Priority claimed from DE102008035110A external-priority patent/DE102008035110A1/de
Application filed filed Critical
Publication of JP2011529277A publication Critical patent/JP2011529277A/ja
Publication of JP2011529277A5 publication Critical patent/JP2011529277A5/ja
Application granted granted Critical
Publication of JP5514819B2 publication Critical patent/JP5514819B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2011520319A 2008-07-28 2009-06-29 オプトエレクトロニクス半導体チップ Expired - Fee Related JP5514819B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102008035110A DE102008035110A1 (de) 2008-07-28 2008-07-28 Optoelektronischer Halbleiterchip
DE102008035110.5 2008-07-28
PCT/DE2009/000917 WO2010012256A1 (de) 2008-07-28 2009-06-29 Optoelektronischer halbleiterchip

Publications (3)

Publication Number Publication Date
JP2011529277A JP2011529277A (ja) 2011-12-01
JP2011529277A5 true JP2011529277A5 (enExample) 2012-08-16
JP5514819B2 JP5514819B2 (ja) 2014-06-04

Family

ID=41279336

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011520319A Expired - Fee Related JP5514819B2 (ja) 2008-07-28 2009-06-29 オプトエレクトロニクス半導体チップ

Country Status (8)

Country Link
US (1) US8841685B2 (enExample)
EP (1) EP2313935A1 (enExample)
JP (1) JP5514819B2 (enExample)
KR (1) KR101606604B1 (enExample)
CN (1) CN102106008B (enExample)
DE (1) DE102008035110A1 (enExample)
TW (1) TWI415297B (enExample)
WO (1) WO2010012256A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005094130A1 (ja) * 2004-03-26 2005-10-06 Matsushita Electric Works, Ltd. 有機発光素子
DE102008048648B4 (de) 2008-09-24 2025-05-15 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip
DE102011017196A1 (de) 2011-04-15 2012-10-18 Osram Opto Semiconductors Gmbh Polarisierte Strahlung emittierender Halbleiterchip
DE102015109786A1 (de) 2015-06-18 2016-12-22 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements sowie optoelektronisches Halbleiterbauelement
CN105609596A (zh) * 2015-09-11 2016-05-25 映瑞光电科技(上海)有限公司 具有电流阻挡结构的led垂直芯片及其制备方法
DE102019103638A1 (de) 2019-02-13 2020-08-13 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches halbleiterbauelement mit abschnitten einer leitfähigen schicht und verfahren zur herstellung eines optoelektronischen halbleiterbauelements

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11168239A (ja) * 1997-12-05 1999-06-22 Matsushita Electric Ind Co Ltd 窒化ガリウム系化合物半導体発光素子
US6287947B1 (en) * 1999-06-08 2001-09-11 Lumileds Lighting, U.S. Llc Method of forming transparent contacts to a p-type GaN layer
US6420736B1 (en) * 2000-07-26 2002-07-16 Axt, Inc. Window for gallium nitride light emitting diode
US6906352B2 (en) 2001-01-16 2005-06-14 Cree, Inc. Group III nitride LED with undoped cladding layer and multiple quantum well
US6445007B1 (en) 2001-03-19 2002-09-03 Uni Light Technology Inc. Light emitting diodes with spreading and improving light emitting area
DE10147886B4 (de) * 2001-09-28 2006-07-13 Osram Opto Semiconductors Gmbh Lumineszenzdiode mit vergrabenem Kontakt und Herstellungsverfahren
US6784462B2 (en) 2001-12-13 2004-08-31 Rensselaer Polytechnic Institute Light-emitting diode with planar omni-directional reflector
ATE445233T1 (de) 2002-01-28 2009-10-15 Nichia Corp Nitrid-halbleiterbauelement mit einem trägersubstrat und verfahren zu seiner herstellung
JP4635985B2 (ja) 2002-10-03 2011-02-23 日亜化学工業株式会社 発光ダイオード
DE10261676A1 (de) 2002-12-31 2004-07-22 Osram Opto Semiconductors Gmbh Leuchtdioden-Chip mit strahlungsdurchlässiger elektrischer Stromaufweitungsschicht
JP4259268B2 (ja) 2003-10-20 2009-04-30 豊田合成株式会社 半導体発光素子
US7119372B2 (en) * 2003-10-24 2006-10-10 Gelcore, Llc Flip-chip light emitting diode
US7012281B2 (en) 2003-10-30 2006-03-14 Epistar Corporation Light emitting diode device and manufacturing method
KR100586949B1 (ko) 2004-01-19 2006-06-07 삼성전기주식회사 플립칩용 질화물 반도체 발광소자
KR101386192B1 (ko) 2004-01-26 2014-04-17 오스람 옵토 세미컨덕터스 게엠베하 전류 분산 구조물을 갖는 박막 ｌｅｄ
DE102004025610A1 (de) 2004-04-30 2005-11-17 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement mit mehreren Stromaufweitungsschichten und Verfahren zu dessen Herstellung
JP2007207869A (ja) * 2006-01-31 2007-08-16 Rohm Co Ltd 窒化物半導体発光素子
TWI288979B (en) 2006-02-23 2007-10-21 Arima Optoelectronics Corp Light emitting diode bonded with metal diffusion and manufacturing method thereof
JP2007281037A (ja) 2006-04-03 2007-10-25 Dowa Holdings Co Ltd 半導体発光素子及びその製造方法
DE102006034847A1 (de) 2006-04-27 2007-10-31 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
TWI322522B (en) 2006-12-18 2010-03-21 Delta Electronics Inc Electroluminescent device, and fabrication method thereof
US7683380B2 (en) 2007-06-25 2010-03-23 Dicon Fiberoptics, Inc. High light efficiency solid-state light emitting structure and methods to manufacturing the same
JP2009260316A (ja) * 2008-03-26 2009-11-05 Panasonic Electric Works Co Ltd 半導体発光素子およびそれを用いる照明装置
DE102008035900A1 (de) 2008-04-30 2009-11-05 Osram Opto Semiconductors Gmbh Leuchtdiodenchip

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