CN102106008B - 光电子半导体芯片 - Google Patents

光电子半导体芯片 Download PDF

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Publication number
CN102106008B
CN102106008B CN200980129527.1A CN200980129527A CN102106008B CN 102106008 B CN102106008 B CN 102106008B CN 200980129527 A CN200980129527 A CN 200980129527A CN 102106008 B CN102106008 B CN 102106008B
Authority
CN
China
Prior art keywords
current spreading
layer
spreading layer
semiconductor chip
optoelectronic semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN200980129527.1A
Other languages
English (en)
Chinese (zh)
Other versions
CN102106008A (zh
Inventor
卢茨·赫佩尔
马蒂亚斯·扎巴蒂尔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of CN102106008A publication Critical patent/CN102106008A/zh
Application granted granted Critical
Publication of CN102106008B publication Critical patent/CN102106008B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8316—Multi-layer electrodes comprising at least one discontinuous layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Led Devices (AREA)
CN200980129527.1A 2008-07-28 2009-06-29 光电子半导体芯片 Expired - Fee Related CN102106008B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102008035110A DE102008035110A1 (de) 2008-07-28 2008-07-28 Optoelektronischer Halbleiterchip
DE102008035110.5 2008-07-28
PCT/DE2009/000917 WO2010012256A1 (de) 2008-07-28 2009-06-29 Optoelektronischer halbleiterchip

Publications (2)

Publication Number Publication Date
CN102106008A CN102106008A (zh) 2011-06-22
CN102106008B true CN102106008B (zh) 2014-12-24

Family

ID=41279336

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200980129527.1A Expired - Fee Related CN102106008B (zh) 2008-07-28 2009-06-29 光电子半导体芯片

Country Status (8)

Country Link
US (1) US8841685B2 (enExample)
EP (1) EP2313935A1 (enExample)
JP (1) JP5514819B2 (enExample)
KR (1) KR101606604B1 (enExample)
CN (1) CN102106008B (enExample)
DE (1) DE102008035110A1 (enExample)
TW (1) TWI415297B (enExample)
WO (1) WO2010012256A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005094130A1 (ja) * 2004-03-26 2005-10-06 Matsushita Electric Works, Ltd. 有機発光素子
DE102008048648B4 (de) 2008-09-24 2025-05-15 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip
DE102011017196A1 (de) 2011-04-15 2012-10-18 Osram Opto Semiconductors Gmbh Polarisierte Strahlung emittierender Halbleiterchip
DE102015109786A1 (de) 2015-06-18 2016-12-22 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements sowie optoelektronisches Halbleiterbauelement
CN105609596A (zh) * 2015-09-11 2016-05-25 映瑞光电科技(上海)有限公司 具有电流阻挡结构的led垂直芯片及其制备方法
DE102019103638A1 (de) 2019-02-13 2020-08-13 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches halbleiterbauelement mit abschnitten einer leitfähigen schicht und verfahren zur herstellung eines optoelektronischen halbleiterbauelements

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10017758A1 (de) * 1999-06-08 2000-12-21 Agilent Technologies Inc Verfahren zum Bilden von transparenten Kontakten an einer p-Typ-GaN-Schicht
WO2003052838A3 (en) * 2001-12-13 2004-05-27 Rensselaer Polytech Inst Light-emitting diode with planar omni-directional reflector
JP2005123501A (ja) * 2003-10-20 2005-05-12 Toyoda Gosei Co Ltd 半導体発光素子
US7119372B2 (en) * 2003-10-24 2006-10-10 Gelcore, Llc Flip-chip light emitting diode
JP2007207869A (ja) * 2006-01-31 2007-08-16 Rohm Co Ltd 窒化物半導体発光素子

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11168239A (ja) * 1997-12-05 1999-06-22 Matsushita Electric Ind Co Ltd 窒化ガリウム系化合物半導体発光素子
US6420736B1 (en) * 2000-07-26 2002-07-16 Axt, Inc. Window for gallium nitride light emitting diode
US6906352B2 (en) 2001-01-16 2005-06-14 Cree, Inc. Group III nitride LED with undoped cladding layer and multiple quantum well
US6445007B1 (en) 2001-03-19 2002-09-03 Uni Light Technology Inc. Light emitting diodes with spreading and improving light emitting area
DE10147886B4 (de) * 2001-09-28 2006-07-13 Osram Opto Semiconductors Gmbh Lumineszenzdiode mit vergrabenem Kontakt und Herstellungsverfahren
ATE445233T1 (de) 2002-01-28 2009-10-15 Nichia Corp Nitrid-halbleiterbauelement mit einem trägersubstrat und verfahren zu seiner herstellung
JP4635985B2 (ja) 2002-10-03 2011-02-23 日亜化学工業株式会社 発光ダイオード
DE10261676A1 (de) 2002-12-31 2004-07-22 Osram Opto Semiconductors Gmbh Leuchtdioden-Chip mit strahlungsdurchlässiger elektrischer Stromaufweitungsschicht
US7012281B2 (en) 2003-10-30 2006-03-14 Epistar Corporation Light emitting diode device and manufacturing method
KR100586949B1 (ko) 2004-01-19 2006-06-07 삼성전기주식회사 플립칩용 질화물 반도체 발광소자
KR101386192B1 (ko) 2004-01-26 2014-04-17 오스람 옵토 세미컨덕터스 게엠베하 전류 분산 구조물을 갖는 박막 ｌｅｄ
DE102004025610A1 (de) 2004-04-30 2005-11-17 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement mit mehreren Stromaufweitungsschichten und Verfahren zu dessen Herstellung
TWI288979B (en) 2006-02-23 2007-10-21 Arima Optoelectronics Corp Light emitting diode bonded with metal diffusion and manufacturing method thereof
JP2007281037A (ja) 2006-04-03 2007-10-25 Dowa Holdings Co Ltd 半導体発光素子及びその製造方法
DE102006034847A1 (de) 2006-04-27 2007-10-31 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
TWI322522B (en) 2006-12-18 2010-03-21 Delta Electronics Inc Electroluminescent device, and fabrication method thereof
US7683380B2 (en) 2007-06-25 2010-03-23 Dicon Fiberoptics, Inc. High light efficiency solid-state light emitting structure and methods to manufacturing the same
JP2009260316A (ja) * 2008-03-26 2009-11-05 Panasonic Electric Works Co Ltd 半導体発光素子およびそれを用いる照明装置
DE102008035900A1 (de) 2008-04-30 2009-11-05 Osram Opto Semiconductors Gmbh Leuchtdiodenchip

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10017758A1 (de) * 1999-06-08 2000-12-21 Agilent Technologies Inc Verfahren zum Bilden von transparenten Kontakten an einer p-Typ-GaN-Schicht
WO2003052838A3 (en) * 2001-12-13 2004-05-27 Rensselaer Polytech Inst Light-emitting diode with planar omni-directional reflector
JP2005123501A (ja) * 2003-10-20 2005-05-12 Toyoda Gosei Co Ltd 半導体発光素子
US7119372B2 (en) * 2003-10-24 2006-10-10 Gelcore, Llc Flip-chip light emitting diode
JP2007207869A (ja) * 2006-01-31 2007-08-16 Rohm Co Ltd 窒化物半導体発光素子

Also Published As

Publication number Publication date
WO2010012256A1 (de) 2010-02-04
KR20110044264A (ko) 2011-04-28
KR101606604B1 (ko) 2016-03-25
DE102008035110A1 (de) 2010-02-11
EP2313935A1 (de) 2011-04-27
TW201013992A (en) 2010-04-01
TWI415297B (zh) 2013-11-11
CN102106008A (zh) 2011-06-22
JP2011529277A (ja) 2011-12-01
US20110284893A1 (en) 2011-11-24
JP5514819B2 (ja) 2014-06-04
US8841685B2 (en) 2014-09-23

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Granted publication date: 20141224

Termination date: 20190629

CF01 Termination of patent right due to non-payment of annual fee