JP5453406B2 - ナノ構造のmosコンデンサ - Google Patents
ナノ構造のmosコンデンサ Download PDFInfo
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- JP5453406B2 JP5453406B2 JP2011513460A JP2011513460A JP5453406B2 JP 5453406 B2 JP5453406 B2 JP 5453406B2 JP 2011513460 A JP2011513460 A JP 2011513460A JP 2011513460 A JP2011513460 A JP 2011513460A JP 5453406 B2 JP5453406 B2 JP 5453406B2
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- 229910004613 CdTe Inorganic materials 0.000 description 1
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- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
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- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- G11C—STATIC STORES
- G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
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- H01L29/94—Metal-insulator-semiconductors, e.g. MOS
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- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1203—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier being a single transistor
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Description
先行技術から考えて、本発明の1つの目的は、広範囲の静電容量の調節と低い空乏静電容量を有するMOSコンデンサに提供することである。このことは、添付の特許請求の範囲と一致する、ナノ構造のMOSコンデンサおよびナノ構造のMOSコンデンサを使用することによって電子回路中の静電容量を変更する方法によって達成される。
Claims (12)
- ナノ構造のMOSコンデンサであって、
基板(12)から突き出ているナノワイヤ(2)と、
前記ナノワイヤ(2)のゲート化される部分(7)を形成するために、前記ナノワイヤ(2)の少なくとも一部の周囲に配置される第1の半径方向の層によって形成されるゲート電極(4)と、
を含み、
前記ナノワイヤ(2)の前記ゲート化される部分(7)は、第1の予め決められた電圧が前記ゲート電極(4)に印加される場合に、完全に空乏にされるように構成され、
前記MOSコンデンサは、蓄積モードと空乏モードにおいて、それぞれWLとW 2 に比例する静電容量を有する、
ことを特徴とするナノ構造のMOSコンデンサ。 - 前記ナノワイヤ(2)の少なくとも一部に沿って前記ナノワイヤ(2)の周囲に配置される少なくとも第2の半径方向の層によって形成される誘電体層(5)をさらに含むことを特徴とする請求項1に記載のナノ構造のMOSコンデンサ。
- 前記ナノワイヤ(2)の前記ゲート化される部分(7)は、長さLと幅Wとを有し、前記幅Wが4L未満であり、好ましくは、0.4L未満であり、より好ましくは、0.1L未満であることを特徴とする請求項1または請求項2に記載のナノ構造のMOSコンデンサ。
- Wは、100μm未満であり、好ましくは60μm未満であり、より好ましくは20μm未満であることを特徴とする請求項3に記載のナノ構造のMOSコンデンサ。
- 前記ゲート電極は、金属接触部(24)であり、前記金属接触部と前記ナノワイヤ(2)とがショットキー障壁を形成することを特徴とする請求項1に記載のナノ構造のMOSコンデンサ。
- 請求項1乃至請求項4のいずれか1項に記載のナノ構造のMOSコンデンサを可変静電容量を提供するために含む電子回路。
- 請求項1乃至請求項4のいずれか1項に記載のナノ構造のMOSコンデンサを含む電圧制御の発振器デバイス。
- 請求項1乃至請求項4のいずれか1項に記載のナノ構造のMOSコンデンサを含むサンプルホールド回路デバイス。
- ナノ構造のMOSコンデンサを使用して電子回路中に可変静電容量を提供する方法であって、
前記ナノ構造のMOSコンデンサは、
基板(12)から突き出ているナノワイヤ(2)と、
前記ナノワイヤ(2)の少なくとも一部に沿って前記ナノワイヤ(2)の周囲に配置された少なくとも第2の半径方向の層によって形成される誘電体層(5)と、
前記ナノワイヤ(2)のゲート化される部分(7)を画定する誘電体層(5)の少なくとも一部の周囲に配置される第1の半径方向の層によって形成されるゲート電極(4)と、を有し、
第1の予め決められた電圧を前記ゲート電極(4)に印加して、前記ナノワイヤ(2)のゲート化される部分(7)を完全に空乏にする工程(101)を有することを特徴とする方法。 - 前記ゲート電極(4)に第2の予め決められた電圧を印加して蓄積モードにする工程(102)をさらに有することを特徴とする請求項9に記載の方法。
- 蓄積モードと空乏モードを変更する工程(103)をさらに有し、
前記可変静電容量は、前記ナノ構造のMOSコンデンサが前記空乏モードで作動しているか、または、前記蓄積モードで作動しているかに依存する、異なる静電容量決定領域によって画定されることを特徴とする請求項10に記載の方法。 - 前記ナノワイヤ(2)の前記ゲート化される部分(7)は、長さLと幅Wとを有し、前記ナノ構造のMOSコンデンサは、蓄積モードと空乏モードにおいてそれぞれWLおよびW2に比例する静電容量を有することを特徴とする請求項10に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE0801393-0 | 2008-06-13 | ||
SE0801393 | 2008-06-13 | ||
PCT/SE2009/050734 WO2009151397A1 (en) | 2008-06-13 | 2009-06-15 | Nanostructured mos capacitor |
Publications (2)
Publication Number | Publication Date |
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JP2011524090A JP2011524090A (ja) | 2011-08-25 |
JP5453406B2 true JP5453406B2 (ja) | 2014-03-26 |
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JP2011513460A Expired - Fee Related JP5453406B2 (ja) | 2008-06-13 | 2009-06-15 | ナノ構造のmosコンデンサ |
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Country | Link |
---|---|
US (1) | US20110089477A1 (ja) |
EP (1) | EP2289106A4 (ja) |
JP (1) | JP5453406B2 (ja) |
KR (1) | KR20110018437A (ja) |
CN (1) | CN102084488A (ja) |
WO (1) | WO2009151397A1 (ja) |
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US8957468B2 (en) * | 2010-11-05 | 2015-02-17 | Semiconductor Energy Laboratory Co., Ltd. | Variable capacitor and liquid crystal display device |
WO2014066371A1 (en) * | 2012-10-26 | 2014-05-01 | Glo Ab | Nanowire sized opto-electronic structure and method for modifying selected portions of same |
KR101940234B1 (ko) * | 2013-12-03 | 2019-01-21 | 한국전자통신연구원 | 쇼트키 다이오드 및 그의 제조방법 |
US9412806B2 (en) * | 2014-06-13 | 2016-08-09 | Invensas Corporation | Making multilayer 3D capacitors using arrays of upstanding rods or ridges |
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DE10006964C2 (de) * | 2000-02-16 | 2002-01-31 | Infineon Technologies Ag | Elektronisches Bauelement mit einer leitenden Verbindung zwischen zwei leitenden Schichten und Verfahren zum Herstellen eines elektronischen Bauelements |
FR2808924B1 (fr) * | 2000-05-09 | 2002-08-16 | Centre Nat Rech Scient | Condenseur a capacite variable |
TW506083B (en) * | 2001-11-28 | 2002-10-11 | Ind Tech Res Inst | Method of using nano-tube to increase semiconductor device capacitance |
FR2844921B1 (fr) * | 2002-09-25 | 2006-02-10 | St Microelectronics Sa | Capacite variable |
US7135728B2 (en) * | 2002-09-30 | 2006-11-14 | Nanosys, Inc. | Large-area nanoenabled macroelectronic substrates and uses therefor |
DE10250829B4 (de) * | 2002-10-31 | 2006-11-02 | Infineon Technologies Ag | Nichtflüchtige Speicherzelle, Speicherzellen-Anordnung und Verfahren zum Herstellen einer nichtflüchtigen Speicherzelle |
US20050167655A1 (en) * | 2004-01-29 | 2005-08-04 | International Business Machines Corporation | Vertical nanotube semiconductor device structures and methods of forming the same |
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-
2009
- 2009-06-15 WO PCT/SE2009/050734 patent/WO2009151397A1/en active Application Filing
- 2009-06-15 EP EP09762766.5A patent/EP2289106A4/en not_active Withdrawn
- 2009-06-15 US US12/997,737 patent/US20110089477A1/en not_active Abandoned
- 2009-06-15 JP JP2011513460A patent/JP5453406B2/ja not_active Expired - Fee Related
- 2009-06-15 KR KR1020117000808A patent/KR20110018437A/ko not_active Application Discontinuation
- 2009-06-15 CN CN200980122331XA patent/CN102084488A/zh active Pending
Also Published As
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WO2009151397A1 (en) | 2009-12-17 |
US20110089477A1 (en) | 2011-04-21 |
WO2009151397A9 (en) | 2011-03-03 |
JP2011524090A (ja) | 2011-08-25 |
EP2289106A4 (en) | 2014-05-21 |
KR20110018437A (ko) | 2011-02-23 |
CN102084488A (zh) | 2011-06-01 |
EP2289106A1 (en) | 2011-03-02 |
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