WO2008129861A1 - 発光素子 - Google Patents

発光素子 Download PDF

Info

Publication number
WO2008129861A1
WO2008129861A1 PCT/JP2008/000899 JP2008000899W WO2008129861A1 WO 2008129861 A1 WO2008129861 A1 WO 2008129861A1 JP 2008000899 W JP2008000899 W JP 2008000899W WO 2008129861 A1 WO2008129861 A1 WO 2008129861A1
Authority
WO
WIPO (PCT)
Prior art keywords
columns
light
electrodes
emitting device
gaps
Prior art date
Application number
PCT/JP2008/000899
Other languages
English (en)
French (fr)
Inventor
Eiichi Satoh
Shogo Nasu
Reiko Taniguchi
Masayuki Ono
Masaru Odagiri
Original Assignee
Panasonic Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corporation filed Critical Panasonic Corporation
Publication of WO2008129861A1 publication Critical patent/WO2008129861A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Electroluminescent Light Sources (AREA)
  • Led Devices (AREA)
  • Luminescent Compositions (AREA)

Abstract

　発光素子は、少なくとも一方が透明又は半透明である一対の電極と、前記一対の電極間に挟まれて設けられた発光層とを備え、前記発光層は、窒化物半導体からなる各カラムの長手方向が前記電極間に互いに平行に延在し、各カラムの平均半径及び間隙がナノサイズである複数のカラムで構成された窒化物半導体ナノカラムと、前記カラムの表面の少なくとも一部を覆って設けられた保護層と、前記カラムの間隙に設けられた蛍光体材料と、を有する。
PCT/JP2008/000899 2007-04-18 2008-04-08 発光素子 WO2008129861A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-109034 2007-04-18
JP2007109034 2007-04-18

Publications (1)

Publication Number Publication Date
WO2008129861A1 true WO2008129861A1 (ja) 2008-10-30

Family

ID=39875391

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/000899 WO2008129861A1 (ja) 2007-04-18 2008-04-08 発光素子

Country Status (1)

Country Link
WO (1) WO2008129861A1 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011105397A1 (ja) * 2010-02-25 2011-09-01 国立大学法人北海道大学 半導体装置及び半導体装置の製造方法
JP2011187909A (ja) * 2010-03-09 2011-09-22 Samsung Mobile Display Co Ltd 量子ドット有機電界発光素子及びその形成方法
EP2912698A4 (en) * 2012-10-26 2016-04-06 Glo Ab OPTOELECTRONIC STRUCTURE IN NANO-WIRE SIZE AND METHOD FOR MODIFYING SELECTED PARTS THEREOF
WO2022258731A1 (fr) * 2021-06-11 2022-12-15 Aledia Procédé de fabrication d'un dispositif optoélectronique

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004363382A (ja) * 2003-06-05 2004-12-24 Sharp Corp 酸化物半導体発光素子およびその製造方法
JP2005228936A (ja) * 2004-02-13 2005-08-25 Dongguk Univ 発光ダイオードおよびその製造方法
JP2007027298A (ja) * 2005-07-14 2007-02-01 Matsushita Electric Works Ltd 半導体発光素子およびそれを用いる照明装置ならびに半導体発光素子の製造方法
JP2007091874A (ja) * 2005-09-28 2007-04-12 Toda Kogyo Corp 耐湿性蛍光体粒子粉末及び該耐湿性蛍光体粒子粉末を用いたｌｅｄ素子または分散型ｅｌ素子

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004363382A (ja) * 2003-06-05 2004-12-24 Sharp Corp 酸化物半導体発光素子およびその製造方法
JP2005228936A (ja) * 2004-02-13 2005-08-25 Dongguk Univ 発光ダイオードおよびその製造方法
JP2007027298A (ja) * 2005-07-14 2007-02-01 Matsushita Electric Works Ltd 半導体発光素子およびそれを用いる照明装置ならびに半導体発光素子の製造方法
JP2007091874A (ja) * 2005-09-28 2007-04-12 Toda Kogyo Corp 耐湿性蛍光体粒子粉末及び該耐湿性蛍光体粒子粉末を用いたｌｅｄ素子または分散型ｅｌ素子

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011105397A1 (ja) * 2010-02-25 2011-09-01 国立大学法人北海道大学 半導体装置及び半導体装置の製造方法
JP5464458B2 (ja) * 2010-02-25 2014-04-09 国立大学法人北海道大学 半導体装置及び半導体装置の製造方法
US8816324B2 (en) 2010-02-25 2014-08-26 National University Corporation Hokkaido University Semiconductor device and method for manufacturing semiconductor device
JP2011187909A (ja) * 2010-03-09 2011-09-22 Samsung Mobile Display Co Ltd 量子ドット有機電界発光素子及びその形成方法
JP2012146689A (ja) * 2010-03-09 2012-08-02 Samsung Mobile Display Co Ltd 量子ドット有機電界発光素子の形成方法
EP2912698A4 (en) * 2012-10-26 2016-04-06 Glo Ab OPTOELECTRONIC STRUCTURE IN NANO-WIRE SIZE AND METHOD FOR MODIFYING SELECTED PARTS THEREOF
US9799796B2 (en) 2012-10-26 2017-10-24 Glo Ab Nanowire sized opto-electronic structure and method for modifying selected portions of same
WO2022258731A1 (fr) * 2021-06-11 2022-12-15 Aledia Procédé de fabrication d'un dispositif optoélectronique
FR3124024A1 (fr) * 2021-06-11 2022-12-16 Aledia Procédé de fabrication d’un dispositif optoélectronique

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WO2008129861A1 (ja) 発光素子

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