JP2014150257A5 - - Google Patents

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Publication number
JP2014150257A5
JP2014150257A5 JP2014015331A JP2014015331A JP2014150257A5 JP 2014150257 A5 JP2014150257 A5 JP 2014150257A5 JP 2014015331 A JP2014015331 A JP 2014015331A JP 2014015331 A JP2014015331 A JP 2014015331A JP 2014150257 A5 JP2014150257 A5 JP 2014150257A5
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JP
Japan
Prior art keywords
electrode layer
light emitting
emitting device
contact portion
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2014015331A
Other languages
English (en)
Japanese (ja)
Other versions
JP6320769B2 (ja
JP2014150257A (ja
Filing date
Publication date
Priority claimed from KR1020130010621A external-priority patent/KR20140097900A/ko
Priority claimed from KR1020130063614A external-priority patent/KR102075132B1/ko
Application filed filed Critical
Publication of JP2014150257A publication Critical patent/JP2014150257A/ja
Publication of JP2014150257A5 publication Critical patent/JP2014150257A5/ja
Application granted granted Critical
Publication of JP6320769B2 publication Critical patent/JP6320769B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2014015331A 2013-01-30 2014-01-30 発光素子 Active JP6320769B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR1020130010621A KR20140097900A (ko) 2013-01-30 2013-01-30 발광소자
KR10-2013-0010621 2013-01-30
KR1020130063614A KR102075132B1 (ko) 2013-06-03 2013-06-03 발광소자
KR10-2013-0063614 2013-06-03

Publications (3)

Publication Number Publication Date
JP2014150257A JP2014150257A (ja) 2014-08-21
JP2014150257A5 true JP2014150257A5 (enExample) 2016-12-08
JP6320769B2 JP6320769B2 (ja) 2018-05-09

Family

ID=50002607

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014015331A Active JP6320769B2 (ja) 2013-01-30 2014-01-30 発光素子

Country Status (5)

Country Link
US (1) US9112114B2 (enExample)
EP (1) EP2763195A3 (enExample)
JP (1) JP6320769B2 (enExample)
CN (1) CN103972348B (enExample)
TW (1) TWI600183B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI600184B (zh) * 2014-04-08 2017-09-21 晶元光電股份有限公司 發光裝置
KR102350784B1 (ko) * 2015-04-07 2022-01-13 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 자외선 발광소자 및 조명시스템
JP7138517B2 (ja) * 2017-10-18 2022-09-16 ローム株式会社 半導体発光装置
KR102543183B1 (ko) 2018-01-26 2023-06-14 삼성전자주식회사 반도체 발광소자
CN110534659B (zh) * 2018-05-23 2022-09-27 昆明申北科技有限公司 顶发光oled的阳极结构、显示装置及其制造方法
DE102019212944A1 (de) 2019-08-28 2021-03-04 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterbauelement, vorrichtung mit einem halbleiterbauelement und verfahren zur herstellung von halbleiterbauelementen
KR102806089B1 (ko) * 2020-02-12 2025-05-12 삼성전자주식회사 Led 소자 및 그 제조방법과, led 소자를 포함하는 디스플레이 장치
KR102855342B1 (ko) * 2020-08-31 2025-09-08 삼성디스플레이 주식회사 발광 소자, 그의 제조 방법, 및 이를 포함한 표시 장치
CN113410356B (zh) * 2021-07-21 2023-11-17 山西中科潞安紫外光电科技有限公司 一种倒装结构深紫外发光二极管芯片及其制备方法

Family Cites Families (19)

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Publication number Priority date Publication date Assignee Title
US6784462B2 (en) * 2001-12-13 2004-08-31 Rensselaer Polytechnic Institute Light-emitting diode with planar omni-directional reflector
TW577178B (en) * 2002-03-04 2004-02-21 United Epitaxy Co Ltd High efficient reflective metal layer of light emitting diode
JP2008283096A (ja) * 2007-05-14 2008-11-20 Hitachi Cable Ltd 半導体発光素子
JP2009054688A (ja) * 2007-08-24 2009-03-12 Kyocera Corp 発光素子
JP5315070B2 (ja) * 2008-02-07 2013-10-16 昭和電工株式会社 化合物半導体発光ダイオード
JP2009200178A (ja) * 2008-02-20 2009-09-03 Hitachi Cable Ltd 半導体発光素子
US8008683B2 (en) * 2008-10-22 2011-08-30 Samsung Led Co., Ltd. Semiconductor light emitting device
JP2010192701A (ja) * 2009-02-18 2010-09-02 Showa Denko Kk 発光ダイオード、発光ダイオードランプ及び発光ダイオードの製造方法
KR100969126B1 (ko) * 2009-03-10 2010-07-09 엘지이노텍 주식회사 발광 소자
KR101007140B1 (ko) * 2009-07-28 2011-01-10 엘지이노텍 주식회사 발광 소자
KR101039999B1 (ko) * 2010-02-08 2011-06-09 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
KR100999798B1 (ko) * 2010-02-11 2010-12-08 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
US8618565B2 (en) * 2010-03-22 2013-12-31 Seoul Opto Device Co., Ltd. High efficiency light emitting diode
TWI532214B (zh) * 2010-10-12 2016-05-01 Ｌｇ伊諾特股份有限公司 發光元件及其封裝
EP2448015B1 (en) * 2010-11-01 2018-04-11 Samsung Electronics Co., Ltd. Semiconductor light emitting device
KR101154320B1 (ko) * 2010-12-20 2012-06-13 엘지이노텍 주식회사 발광소자, 발광소자 패키지 및 이를 포함하는 조명 장치
JP5050109B2 (ja) * 2011-03-14 2012-10-17 株式会社東芝 半導体発光素子
KR101868537B1 (ko) * 2011-11-07 2018-06-19 엘지이노텍 주식회사 발광소자 및 이를 포함하는 발광 소자 패키지
KR20130120615A (ko) * 2012-04-26 2013-11-05 엘지이노텍 주식회사 발광 소자 및 발광 소자 패키지

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