JP2014150255A5 - - Google Patents

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Publication number
JP2014150255A5
JP2014150255A5 JP2014015329A JP2014015329A JP2014150255A5 JP 2014150255 A5 JP2014150255 A5 JP 2014150255A5 JP 2014015329 A JP2014015329 A JP 2014015329A JP 2014015329 A JP2014015329 A JP 2014015329A JP 2014150255 A5 JP2014150255 A5 JP 2014150255A5
Authority
JP
Japan
Prior art keywords
layer
light emitting
emitting device
doped
electrode layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2014015329A
Other languages
English (en)
Japanese (ja)
Other versions
JP2014150255A (ja
JP6385680B2 (ja
Filing date
Publication date
Priority claimed from KR1020130010620A external-priority patent/KR102035180B1/ko
Priority claimed from KR1020130092120A external-priority patent/KR20150015983A/ko
Application filed filed Critical
Publication of JP2014150255A publication Critical patent/JP2014150255A/ja
Publication of JP2014150255A5 publication Critical patent/JP2014150255A5/ja
Application granted granted Critical
Publication of JP6385680B2 publication Critical patent/JP6385680B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2014015329A 2013-01-30 2014-01-30 発光素子 Expired - Fee Related JP6385680B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR1020130010620A KR102035180B1 (ko) 2013-01-30 2013-01-30 발광소자
KR10-2013-0010620 2013-01-30
KR10-2013-0092120 2013-08-02
KR1020130092120A KR20150015983A (ko) 2013-08-02 2013-08-02 발광소자

Publications (3)

Publication Number Publication Date
JP2014150255A JP2014150255A (ja) 2014-08-21
JP2014150255A5 true JP2014150255A5 (enExample) 2016-12-08
JP6385680B2 JP6385680B2 (ja) 2018-09-05

Family

ID=50000912

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014015329A Expired - Fee Related JP6385680B2 (ja) 2013-01-30 2014-01-30 発光素子

Country Status (5)

Country Link
US (1) US8994058B2 (enExample)
EP (1) EP2763194B1 (enExample)
JP (1) JP6385680B2 (enExample)
CN (1) CN103972362A (enExample)
TW (1) TWI590493B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3333908B1 (en) * 2015-08-07 2021-11-03 Suzhou Lekin Semiconductor Co., Ltd. Light emitting device
CN105322068B (zh) * 2015-11-17 2017-12-26 天津三安光电有限公司 发光二极管芯片及其制作方法
JP6826395B2 (ja) * 2016-08-26 2021-02-03 ローム株式会社 半導体発光素子
CN110534659B (zh) * 2018-05-23 2022-09-27 昆明申北科技有限公司 顶发光oled的阳极结构、显示装置及其制造方法
JP7360822B2 (ja) * 2019-06-13 2023-10-13 ローム株式会社 半導体発光装置
CN111009144A (zh) * 2019-12-11 2020-04-14 福州大学 一种基于MicroLED的交通信号灯

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3981218B2 (ja) * 1999-04-28 2007-09-26 日立電線株式会社 発光素子用エピタキシャルウエハおよび発光素子
US6784462B2 (en) * 2001-12-13 2004-08-31 Rensselaer Polytechnic Institute Light-emitting diode with planar omni-directional reflector
TW577178B (en) * 2002-03-04 2004-02-21 United Epitaxy Co Ltd High efficient reflective metal layer of light emitting diode
US6716654B2 (en) * 2002-03-12 2004-04-06 Opto Tech Corporation Light-emitting diode with enhanced brightness and method for fabricating the same
US8283683B2 (en) * 2006-11-07 2012-10-09 Opto Tech Corporation Chip-bonding light emitting diode chip
JP5315070B2 (ja) * 2008-02-07 2013-10-16 昭和電工株式会社 化合物半導体発光ダイオード
JP2009200178A (ja) * 2008-02-20 2009-09-03 Hitachi Cable Ltd 半導体発光素子
US8008683B2 (en) * 2008-10-22 2011-08-30 Samsung Led Co., Ltd. Semiconductor light emitting device
KR100969126B1 (ko) * 2009-03-10 2010-07-09 엘지이노텍 주식회사 발광 소자
KR101007140B1 (ko) * 2009-07-28 2011-01-10 엘지이노텍 주식회사 발광 소자
KR101039999B1 (ko) * 2010-02-08 2011-06-09 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
KR100999798B1 (ko) * 2010-02-11 2010-12-08 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
US8618565B2 (en) * 2010-03-22 2013-12-31 Seoul Opto Device Co., Ltd. High efficiency light emitting diode
TWI532214B (zh) * 2010-10-12 2016-05-01 Ｌｇ伊諾特股份有限公司 發光元件及其封裝
EP2448015B1 (en) * 2010-11-01 2018-04-11 Samsung Electronics Co., Ltd. Semiconductor light emitting device
KR101154320B1 (ko) * 2010-12-20 2012-06-13 엘지이노텍 주식회사 발광소자, 발광소자 패키지 및 이를 포함하는 조명 장치
JP5050109B2 (ja) * 2011-03-14 2012-10-17 株式会社東芝 半導体発光素子
JP2012222033A (ja) * 2011-04-05 2012-11-12 Showa Denko Kk 発光ダイオードの製造方法、切断方法及び発光ダイオード
JP5095840B2 (ja) * 2011-04-26 2012-12-12 株式会社東芝 半導体発光素子
KR101868537B1 (ko) * 2011-11-07 2018-06-19 엘지이노텍 주식회사 발광소자 및 이를 포함하는 발광 소자 패키지
JP2013179150A (ja) * 2012-02-28 2013-09-09 Showa Denko Kk 発光ダイオードの製造方法
KR20130120615A (ko) * 2012-04-26 2013-11-05 엘지이노텍 주식회사 발광 소자 및 발광 소자 패키지

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