JP2013098561A5 - - Google Patents

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Publication number
JP2013098561A5
JP2013098561A5 JP2012237129A JP2012237129A JP2013098561A5 JP 2013098561 A5 JP2013098561 A5 JP 2013098561A5 JP 2012237129 A JP2012237129 A JP 2012237129A JP 2012237129 A JP2012237129 A JP 2012237129A JP 2013098561 A5 JP2013098561 A5 JP 2013098561A5
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JP
Japan
Prior art keywords
light emitting
layer
semiconductor layer
disposed
electrode
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JP2012237129A
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English (en)
Japanese (ja)
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JP2013098561A (ja
JP6133039B2 (ja
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Publication date
Priority claimed from KR1020110111309A external-priority patent/KR101871372B1/ko
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Publication of JP2013098561A publication Critical patent/JP2013098561A/ja
Publication of JP2013098561A5 publication Critical patent/JP2013098561A5/ja
Application granted granted Critical
Publication of JP6133039B2 publication Critical patent/JP6133039B2/ja
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JP2012237129A 2011-10-28 2012-10-26 発光素子 Active JP6133039B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020110111309A KR101871372B1 (ko) 2011-10-28 2011-10-28 발광 소자
KR10-2011-0111309 2011-10-28

Publications (3)

Publication Number Publication Date
JP2013098561A JP2013098561A (ja) 2013-05-20
JP2013098561A5 true JP2013098561A5 (enExample) 2016-01-21
JP6133039B2 JP6133039B2 (ja) 2017-05-24

Family

ID=47172418

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012237129A Active JP6133039B2 (ja) 2011-10-28 2012-10-26 発光素子

Country Status (6)

Country Link
US (1) US9153622B2 (enExample)
EP (1) EP2587541B1 (enExample)
JP (1) JP6133039B2 (enExample)
KR (1) KR101871372B1 (enExample)
CN (1) CN103094300A (enExample)
TW (1) TWI535061B (enExample)

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Publication number Priority date Publication date Assignee Title
US10388690B2 (en) * 2012-08-07 2019-08-20 Seoul Viosys Co., Ltd. Wafer level light-emitting diode array
TWI684292B (zh) * 2013-07-17 2020-02-01 新世紀光電股份有限公司 發光二極體結構
TWI527263B (zh) 2013-07-17 2016-03-21 新世紀光電股份有限公司 發光二極體結構
KR102156376B1 (ko) * 2014-02-21 2020-09-15 엘지이노텍 주식회사 발광 소자
KR102212666B1 (ko) 2014-06-27 2021-02-05 엘지이노텍 주식회사 발광소자
US10074775B2 (en) 2015-07-16 2018-09-11 Nichia Corporation Light emitting element and light emitting device
JP6555043B2 (ja) 2015-09-18 2019-08-07 日亜化学工業株式会社 発光素子及び発光装置
SG10201912836WA (en) 2015-09-28 2020-02-27 Jxtg Nippon Oil & Energy Corp Cylinder lubricating oil composition for crosshead diesel engine
KR102443033B1 (ko) * 2015-10-12 2022-09-16 삼성전자주식회사 발광소자 패키지 및 이를 포함하는 조명 장치
WO2018182299A1 (ko) * 2017-03-27 2018-10-04 엘지이노텍 주식회사 반도체 소자
KR102343087B1 (ko) * 2017-04-28 2021-12-24 엘지이노텍 주식회사 반도체 소자 패키지
KR102515603B1 (ko) * 2018-04-11 2023-03-29 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자 패키지 및 광원 모듈
JP7014973B2 (ja) * 2019-08-28 2022-02-02 日亜化学工業株式会社 発光装置
KR102348950B1 (ko) * 2020-03-26 2022-01-11 주식회사 에스엘바이오닉스 반도체 발광소자
KR20210134103A (ko) * 2020-04-29 2021-11-09 삼성디스플레이 주식회사 발광 소자 및 이를 포함하는 표시 장치
CN112490260B (zh) * 2020-11-13 2024-02-02 泉州三安半导体科技有限公司 一种发光器件及其制备方法
TWI769817B (zh) * 2021-05-17 2022-07-01 友達光電股份有限公司 顯示裝置及其製造方法
KR20230033185A (ko) * 2021-08-30 2023-03-08 삼성디스플레이 주식회사 표시 장치, 발광 소자의 제조 방법, 및 이에 따라 제조된 발광 소자를 포함하는 표시 장치의 제조 방법
KR102879100B1 (ko) * 2021-10-14 2025-10-30 엘지디스플레이 주식회사 표시 장치

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WO2005062389A2 (en) * 2003-12-24 2005-07-07 Matsushita Electric Industrial Co., Ltd. Semiconductor light emitting device, lighting module, lighting apparatus, display element, and manufacturing method for semiconductor light emitting device
JP3802911B2 (ja) 2004-09-13 2006-08-02 ローム株式会社 半導体発光装置
WO2006098545A2 (en) * 2004-12-14 2006-09-21 Seoul Opto Device Co., Ltd. Light emitting device having a plurality of light emitting cells and package mounting the same
KR100974923B1 (ko) * 2007-03-19 2010-08-10 서울옵토디바이스주식회사 발광 다이오드
CN101663919B (zh) * 2007-04-02 2013-07-24 皇家飞利浦电子股份有限公司 驱动发光二极管
KR100999689B1 (ko) * 2008-10-17 2010-12-08 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법, 이를 구비한 발광장치
TWI466266B (zh) * 2009-02-24 2014-12-21 晶元光電股份有限公司 陣列式發光元件及其裝置
JP5614938B2 (ja) * 2009-02-26 2014-10-29 日亜化学工業株式会社 半導体発光素子
US8476668B2 (en) * 2009-04-06 2013-07-02 Cree, Inc. High voltage low current surface emitting LED
US9093293B2 (en) * 2009-04-06 2015-07-28 Cree, Inc. High voltage low current surface emitting light emitting diode
JP5246199B2 (ja) * 2010-03-31 2013-07-24 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子
KR101081193B1 (ko) 2009-10-15 2011-11-07 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
KR100986374B1 (ko) * 2009-12-09 2010-10-08 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
KR101106151B1 (ko) * 2009-12-31 2012-01-20 서울옵토디바이스주식회사 발광 소자 및 그것을 제조하는 방법
JP2011151190A (ja) * 2010-01-21 2011-08-04 Stanley Electric Co Ltd 半導体発光装置
JP2012028749A (ja) * 2010-07-22 2012-02-09 Seoul Opto Devices Co Ltd 発光ダイオード
TW201238043A (en) * 2011-03-11 2012-09-16 Chi Mei Lighting Tech Corp Light-emitting diode device and method for manufacturing the same
KR101115539B1 (ko) * 2011-06-10 2012-02-28 서울옵토디바이스주식회사 발광 소자 및 그것을 제조하는 방법
US8759847B2 (en) * 2011-12-22 2014-06-24 Bridgelux, Inc. White LED assembly with LED string and intermediate node substrate terminals
US9276166B2 (en) * 2012-04-13 2016-03-01 Epistar Corporation Method for forming light-emitting device

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