TWI535061B - 發光裝置 - Google Patents

發光裝置 Download PDF

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Publication number
TWI535061B
TWI535061B TW101139752A TW101139752A TWI535061B TW I535061 B TWI535061 B TW I535061B TW 101139752 A TW101139752 A TW 101139752A TW 101139752 A TW101139752 A TW 101139752A TW I535061 B TWI535061 B TW I535061B
Authority
TW
Taiwan
Prior art keywords
light
layer
semiconductor layer
emitting
disposed
Prior art date
Application number
TW101139752A
Other languages
English (en)
Chinese (zh)
Other versions
TW201327917A (zh
Inventor
金省均
吳玧京
秋聖鎬
Original Assignee
Ｌｇ伊諾特股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ｌｇ伊諾特股份有限公司 filed Critical Ｌｇ伊諾特股份有限公司
Publication of TW201327917A publication Critical patent/TW201327917A/zh
Application granted granted Critical
Publication of TWI535061B publication Critical patent/TWI535061B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors

Landscapes

  • Led Devices (AREA)
  • Led Device Packages (AREA)
TW101139752A 2011-10-28 2012-10-26 發光裝置 TWI535061B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020110111309A KR101871372B1 (ko) 2011-10-28 2011-10-28 발광 소자

Publications (2)

Publication Number Publication Date
TW201327917A TW201327917A (zh) 2013-07-01
TWI535061B true TWI535061B (zh) 2016-05-21

Family

ID=47172418

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101139752A TWI535061B (zh) 2011-10-28 2012-10-26 發光裝置

Country Status (6)

Country Link
US (1) US9153622B2 (enExample)
EP (1) EP2587541B1 (enExample)
JP (1) JP6133039B2 (enExample)
KR (1) KR101871372B1 (enExample)
CN (1) CN103094300A (enExample)
TW (1) TWI535061B (enExample)

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US10388690B2 (en) * 2012-08-07 2019-08-20 Seoul Viosys Co., Ltd. Wafer level light-emitting diode array
TWI527263B (zh) 2013-07-17 2016-03-21 新世紀光電股份有限公司 發光二極體結構
TWI684292B (zh) * 2013-07-17 2020-02-01 新世紀光電股份有限公司 發光二極體結構
KR102156376B1 (ko) * 2014-02-21 2020-09-15 엘지이노텍 주식회사 발광 소자
KR102212666B1 (ko) 2014-06-27 2021-02-05 엘지이노텍 주식회사 발광소자
US10074775B2 (en) 2015-07-16 2018-09-11 Nichia Corporation Light emitting element and light emitting device
JP6555043B2 (ja) 2015-09-18 2019-08-07 日亜化学工業株式会社 発光素子及び発光装置
JP6898852B2 (ja) 2015-09-28 2021-07-07 Ｅｎｅｏｓ株式会社 クロスヘッド型ディーゼル機関用シリンダ潤滑油組成物
KR102443033B1 (ko) * 2015-10-12 2022-09-16 삼성전자주식회사 발광소자 패키지 및 이를 포함하는 조명 장치
US11329097B2 (en) * 2017-03-27 2022-05-10 Suzhou Lekin Semiconductor Co., Ltd. Semiconductor device having a first pad not overlapping first connection electrodes and a second pad not overlapping second connection electrodes in a thickness direction
KR102343087B1 (ko) * 2017-04-28 2021-12-24 엘지이노텍 주식회사 반도체 소자 패키지
KR102515603B1 (ko) * 2018-04-11 2023-03-29 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자 패키지 및 광원 모듈
JP7014973B2 (ja) * 2019-08-28 2022-02-02 日亜化学工業株式会社 発光装置
KR102348950B1 (ko) * 2020-03-26 2022-01-11 주식회사 에스엘바이오닉스 반도체 발광소자
KR20210134103A (ko) * 2020-04-29 2021-11-09 삼성디스플레이 주식회사 발광 소자 및 이를 포함하는 표시 장치
CN112490260B (zh) * 2020-11-13 2024-02-02 泉州三安半导体科技有限公司 一种发光器件及其制备方法
TWI769817B (zh) * 2021-05-17 2022-07-01 友達光電股份有限公司 顯示裝置及其製造方法
KR20230033185A (ko) * 2021-08-30 2023-03-08 삼성디스플레이 주식회사 표시 장치, 발광 소자의 제조 방법, 및 이에 따라 제조된 발광 소자를 포함하는 표시 장치의 제조 방법
KR102879100B1 (ko) * 2021-10-14 2025-10-30 엘지디스플레이 주식회사 표시 장치

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EP1700344B1 (en) * 2003-12-24 2016-03-02 Panasonic Intellectual Property Management Co., Ltd. Semiconductor light emitting device and lighting module
JP3802911B2 (ja) * 2004-09-13 2006-08-02 ローム株式会社 半導体発光装置
JP2008523637A (ja) * 2004-12-14 2008-07-03 ソウル オプト−デバイス カンパニー リミテッド 複数の発光セルを有する発光素子及びそれを搭載したパッケージ
KR100974923B1 (ko) * 2007-03-19 2010-08-10 서울옵토디바이스주식회사 발광 다이오드
WO2008120166A1 (en) * 2007-04-02 2008-10-09 Koninklijke Philips Electronics N.V. Driving light emitting diodes
KR100999689B1 (ko) * 2008-10-17 2010-12-08 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법, 이를 구비한 발광장치
TWI466266B (zh) * 2009-02-24 2014-12-21 晶元光電股份有限公司 陣列式發光元件及其裝置
JP5614938B2 (ja) * 2009-02-26 2014-10-29 日亜化学工業株式会社 半導体発光素子
US8476668B2 (en) * 2009-04-06 2013-07-02 Cree, Inc. High voltage low current surface emitting LED
US9093293B2 (en) * 2009-04-06 2015-07-28 Cree, Inc. High voltage low current surface emitting light emitting diode
JP5246199B2 (ja) * 2010-03-31 2013-07-24 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子
KR101081193B1 (ko) 2009-10-15 2011-11-07 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
KR100986374B1 (ko) * 2009-12-09 2010-10-08 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
KR101106151B1 (ko) * 2009-12-31 2012-01-20 서울옵토디바이스주식회사 발광 소자 및 그것을 제조하는 방법
JP2011151190A (ja) * 2010-01-21 2011-08-04 Stanley Electric Co Ltd 半導体発光装置
JP2012028749A (ja) * 2010-07-22 2012-02-09 Seoul Opto Devices Co Ltd 発光ダイオード
TW201238043A (en) * 2011-03-11 2012-09-16 Chi Mei Lighting Tech Corp Light-emitting diode device and method for manufacturing the same
KR101115539B1 (ko) * 2011-06-10 2012-02-28 서울옵토디바이스주식회사 발광 소자 및 그것을 제조하는 방법
US8759847B2 (en) * 2011-12-22 2014-06-24 Bridgelux, Inc. White LED assembly with LED string and intermediate node substrate terminals
US9276166B2 (en) * 2012-04-13 2016-03-01 Epistar Corporation Method for forming light-emitting device

Also Published As

Publication number Publication date
TW201327917A (zh) 2013-07-01
JP2013098561A (ja) 2013-05-20
US20130105828A1 (en) 2013-05-02
KR101871372B1 (ko) 2018-08-02
JP6133039B2 (ja) 2017-05-24
EP2587541A1 (en) 2013-05-01
CN103094300A (zh) 2013-05-08
EP2587541B1 (en) 2017-09-06
KR20130046755A (ko) 2013-05-08
US9153622B2 (en) 2015-10-06

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