TWI466266B - 陣列式發光元件及其裝置 - Google Patents
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Description
本發明係關於一陣列式發光元件及其顯示裝置。
藍光發光二極體之出現使得發光二極體光源應用於照明領域之目標不再遙不可及。照明光源不外乎白光光源,目前成熟之技術包括以紅光、藍光、綠光發光二極體混光以形成白光;另一成熟技術包括以藍光發光二極體搭配黃色螢光粉膠體封裝形成白光。
本發明提出一新穎之發光二極體晶粒結構以及顯示裝置以廣泛應用於各式光源。
本發明之一方面在提供一發光元件,包含一基板;一半導體發光陣列絕緣地形成於所述之基板上,發出具有第一光譜之第一光線,其中,所述之發光陣列包含一第一第一發光單元及一第二發光單元;一第一波長轉換層形成於所述之第一發光單上,並藉由所述之第一光線激發出具有第二光譜之第二光線;一第二波長轉換層形成於所述之第二發光單元上,並藉由所述之第一光線激發出具有相異於第二光譜之第三光譜之第三光線;以及一電路層以一連接形式使第一發光單元及第二發光單元電性連接,使得第一發光單元及第二發光單元於一電源驅動時,依一預定時脈交互點亮。
本發明之一方面在提供一具有陣列式發光元件之顯示裝置。所述之顯示裝置具有複數個畫素,包含一背光模組、一液晶模組形成於背光模組之上、一彩色濾光模組形成於液晶模組之上、以及一控制模組,用以控制所述之背光模組及所述之液晶模組。所述之背光模組包含一發光元件用以提供所述之顯示裝置所需之光源;所述之彩色濾光模組,包含複數個濾光區塊分別對應於所述之顯示裝置之複數個畫素,且所述之複數個濾光區塊至少包含一第一濾光區塊用以過濾除了具有第一光譜之第一光線以外之光線,以及一透光區塊,實質上不具有濾光功能。依本發明之一實施例,所述之發光元件包含一第一發光單元發出一具有第一光譜之第一光線、一第二發光單元發出一具有相異於第一光譜之第二光譜之第二光線、以及一電路連接單元以一連接形式使第一發光單元及第二發光單元電性連接,使得顯示裝置於一電源驅動顯示時,第一發光單元及第二發光單元依一預定時脈交互點亮。
第1圖揭示一符合本發明之發光二極體晶粒110之上視圖,包含一2乘2之發光陣列。發光二極體晶粒110包含發光單元R1、發光單元R2、發光單元R3、以及發光單元R4彼此絕緣地形成於一成長基板111上,並與該成長基板電性絕緣、一電路層118以一連接形式使發光單元R1~R4電性連接、波長轉換層117-1、117-2、117-3、及117-4分別對應形成於發光單元R1、R2、R3、及R4之上。請同時參考第3圖,揭示第1圖之電路示意圖,其中,電路層118之連接形式係使得發光單元R1及R3為串聯連接,發光單元R2及R4為串聯連接,串聯之發光單元R1及R3與串聯之發光單元R2及R4則為反向並聯(anti-parallel)連接,並共同連接至一電源裝置之二端,所述之電源裝置可為一交流式(Alternating Current;AC)電源。
第2圖為第1圖依AA’剖面線所示之結構示意圖,發光單元R1及R3係共同形成於基板上,並且以一溝渠隔開隔開,發光單元R1及R3各包含一第一接觸層112磊晶成長於成長基板111之上、一發光疊層113,係由一具有第一導電型之第一束縛層1131(cladding layer)、一活性層1132(active layer)、以及一具有第二導電型之第二束縛層1133依續磊晶成長於第一接觸層112之上、一第二接觸層114形成於第二束縛層1133之上、一第一電極116形成於第一接觸層112之上、一第二電極115形成於第一接觸層114上、以及波長轉換層117-1及波長轉換層117-3對應地形成於發光單元R1及R3之第二接觸層114之上。電路層118係延伸自發光單元R1之第一電極116上至發光單元R3之第二電極115上,使得發光單元R1及R3形成串聯連接。相同地,如第1圖所示,發光單元R2之第二電極115藉由電路層118串聯連接至發光單元R4之第一電極116;並且,發光單元R1之第二電極115與發光單元R2之第一電極116藉由電路層118共同連接至交流式電源之正極,發光單元R3之第一電極116與發光單元R4之第二電極115藉由電路層118共同連接至交流式電源之負極,以形成反向並聯之電路結構。於本發明之另一實施例,發光二極體晶粒110更包含一電流分散層(未繪示)形成於第二接觸層114及第二電極115之間,以使電流分散於發光二極體晶粒110表面,其中,所述之電流分散層具有低於第二接觸層114之電阻值(resistivity)。
如第2圖所示,發光二極體晶粒110更包含一絕緣層119形成於電路層118與發光單元R1及R3側壁以及電路層118與基板111之間以防止發光單元R1或R3因電路層118而發生短路現象。相同地,發光單元R1~R4具有相似之結構,即發光單元R1~R4具有相同之發光疊層結構,因此可發出具有相同光譜之光線,並且形成於其上之各所述之波長轉換層可為不同之波長轉換材料,以因應需求使各所述之發光單元藉由其對應之波長轉換層轉換為具有不同光譜之光線。於本發明之實施例,波長轉換層係為一層狀結構直接塗佈於第二接觸層114之表面並為發光二極體晶粒之一部份,且第二電極115突出於所述之波長轉換層。波長轉換層117-1、117-2、117-3、及117-4包含至少一種材料選自於藍色螢光粉、黃色螢光粉、綠色螢光粉、紅色螢光粉、硒化鋅、硒化鎘鋅、III族磷化物、III族砷化物、以及III族氮化物所組成之材料群組。所述之藍色螢光粉係指能將入射至螢光粉之光線轉換為藍光之螢光粉;其他諸如黃色螢光粉、綠色螢光粉、及紅色螢光粉亦具有類似之意義。各螢光粉材料及其組成係屬該領域之習知技藝,不在此贅述。
如第3圖所示,發光元件101包含如第1圖或第2圖所示之發光二極體晶粒110,以及一交流式電源連接至發光二極體晶粒110。下表例示發光單元R1~R4及其對應之波長轉換層117-1、117-2、117-3、及117-4之材料組合,其中,發光單元R1~R4係發出波長範圍大約介於410~430nm左右之近紫外光(near UV)或波長範圍大約介於440~480nm之藍光,並分別經過波長轉換層117-1、117-2、117-3、及117-4轉換成各種顏色之光線,以混合形成白光。
如上表之實施例一,波長轉換層117-1、117-2、117-3、及117-4之材質分別包含黃色、紅色、藍色、綠色螢光粉。於交流電源週期波之正向半週期,發光單元R1及R3受驅動發出波長範圍大約介於410~430nm左右之近紫外光,分別經具有黃色螢光粉之波長轉換層117-1及具有藍色螢光粉之波長轉換層117-3轉換後發出波長範圍大約介於570~595nm之黃光及波長範圍大約介於440~480nm之藍光;於交流電源週期波之負向半週期,發光單元R2及R4受驅動發出之425nm近紫外光,分別經具有紅色螢光粉之波長轉換層117-2及具有綠色螢光粉之波長轉換層117-4轉換發出波長範圍大約介於600~650nm之紅光及波長範圍大約介於500~560nm之綠光,並與正向半週期所發出之黃光及藍光混合形成白光。於本發明之另一實施例,所述之波長轉換層亦可選擇性地僅形成於部份之發光單元R1~R4之上,如表一之實施例五。由於發光二極體晶粒110係依交流頻率分區驅動發光,且各波長轉換層僅分別塗佈於對應之發光單元上,因此可有效降低各波長轉換層產生不必要之二次轉換所造成之光損失。其中,所述之交流頻率可為60Hz或其倍數頻率。
為了提高元件之散熱效果,可將第2圖之發光二極體晶粒110之成長基板111移除,並將一支持基板121以一非單晶相接合層123接合至第一接觸層112,形成如第4圖所示之實施例,並且,如支持基板121為不透光時,可於第一接觸層112與非單晶相接合層123之間形成一反射層122以避免光線被支持基板121吸收。
第5圖揭示一符合本發明之發光元件501,包含一具有4乘4發光陣列之發光二極體晶粒510,以及一電源裝置電性連接至發光二極體晶粒之二端。發光二極體晶粒510包含發光單元R1、發光單元R2、發光單元R3、以及發光單元R4彼此絕緣地形成於一成長基板511上,並與該成長基板電性絕緣,其中發光單元R1~R4各為串聯之1乘4發光陣列,一電路層518以一連接形式使發光單元R1~R4電性連接,波長轉換層517-1、517-2、517-3、及517-4分別對應形成於發光單元R1、R2、R3、及R4上。其中,電路層518之連接形式係使得發光單元R1及R3為串聯連接,發光單元R2及R4為串聯連接,串聯之發光單元R1及R3與串聯之發光單元R2及R4則為反向並聯(anti-parallel)連接,並共同連接至電源裝置520之二端。電源裝置520可為一交流式(Alternating Current;AC)電源。由於發光二極體晶粒510係依交流頻率分區驅動發光,且各波長轉換層僅分別塗佈於對應之發光單元上,因此可有效降低各波長轉換層產生不必要之二次轉換所造成之光損失。
上述各實施例之發光二極體晶粒具有一具有一面積小於5mm2
或小於2mm2
以方便封裝於一封裝體內或形成於一具有電路之載板上,較佳為具有一符合商用規格之尺寸,例如12mil乘12mil、25mil乘25mil、45mil乘45mil、或55mil乘55mil等。
第6圖揭示依本發明之一顯示裝置。顯示裝置600具有複數個畫素,包含一背光模組601、一第一偏光模組602形成於背光模組601上、一薄膜電晶體模組603形成於第一偏光模組602上、一液晶模組604形成於薄膜電晶體模組603上、一第二偏光模組605形成於液晶模組604上、一彩色濾光模組606形成於第二偏光模組605上、以及一控制模組607,包含一控制電路用以控制顯示裝置600之上述模組。其中,背光模組601更包含一發光元件610用以提供顯示裝置600所需之光源。發光元件610可為各式光源或相同於本發明先前所提及之實施例之發光二極體晶粒110以及如表一之各實施例四所示之波長轉換層117-1~117-4之材質分配。舉表一之實施例四為例,即波長轉換層117-1、117-2、117-3、及117-4之材質分別包含紅色、綠色、藍色、綠色螢光粉。於交流電源週期波之正向半週期,發光單元R1及R3受驅動發出之410~430nm近紫外光,分別經具有紅色螢光粉之波長轉換層117-1及具有藍色螢光粉之波長轉換層117-3轉換後發出波長範圍大約介於600~650nm之紅光及波長範圍大約介於440~480nm之藍光;於交流電源週期波之負向半週期,發光單元R2及R4受驅動發出波長範圍大約介於410~430nm之近紫外光,經具有綠色螢光粉之波長轉換層117-2及117-4轉換後發出波長範圍大約介於500~560nm之綠光。液晶模組603包含複數個液晶區塊分別對應於顯示裝置600之所述之複數個畫素。彩色濾光模組606包含複數個紅色濾光區塊R用以過濾波長範圍介於600~650nm之紅色光線以外之光線、複數個藍色濾光區塊B用以過濾波長範圍介於440~480nm之藍色光線以外之光線、以及複數個透光區塊C,係實質上對於可見光透明,亦即不具有濾光功能。由於背光源所發出之紅、藍、及綠光係依交流電源之時脈60Hz交互點亮,即紅光及藍光係於交流電源週期波之正向半週期期間受驅動發光,並分別於彩色濾光模組606之紅色濾光區塊R及藍色濾光區塊B發出紅光及藍光;綠光係於交流電源週期波之負正向半週期期間受驅動單獨發光,因此可於彩色濾光模組606之透光區塊C直接出光,勿須安排綠色濾光區塊於彩色濾光模組606上。其中,透光區塊C包含具有透光之材質或為一空隙。紅色濾光區塊R、藍色濾光區塊B、以及透光區塊C係具有實質上相同之寬度、面積、及/或體積。關於顯示裝置600其他未詳述或未述及之部份則係屬此領域之習知技藝,不在此贅述。
上述之諸實施例,其中,所述之第一接觸層、第一束縛層、第二束縛層、第二接觸層、以及活性層之材料係包含III-V族化合物Alx
Iny
Ga(1-x-y
)N,其中,0p,q1;p、q、x、y均為正數;(p+q)1;(x+y)1。所述之第一摻雜質為n型摻雜質,例如Si,或者是p型摻雜質,例如Mg或Zn;所述之第二摻雜質為具有與第一摻雜質相異導電型之摻雜質。所述之電流分散層包含透明金屬氧化物,例如為氧化銦錫(ITO)、金屬、或金屬合金。所述之成長基板例如為包括至少一種透明材料或絕緣材質選自於藍寶石、碳化矽、氮化鎵、以及氮化鋁所組成之群組。所述之支持基板例如為包括透明材料選自於磷化鎵、藍寶石、碳化矽、氮化鎵、以及氮化鋁所組成之群組;或例如為包括導熱材料選自於鑽石、類鑽碳(DLC)、氧化鋅、金、銀、鋁等金屬材質所組成之群組。所述之非單晶相接合層包含至少一種材料選自於金屬氧化物、非金屬氧化物、高分子聚合物、金屬、或金屬合金所組成之群組。
本發明所列舉之各實施例僅用以說明本發明,並非用以限制本發明之範圍。任何人對本發明所作之任何顯而易知之修飾或變更皆不脫離本發明之精神與範圍。
101、501...發光元件
110、410、510、610...發光二極體晶粒
111...成長基板
112...第一接觸層
113...發光層
1131...第一導電型束縛層
1132...活性層
1133...第二導電型束縛層
114...第二接觸層
115...第二電極
116...第一電極
117-1...第一波長轉換層
117-2...第二波長轉換層
117-3...第三波長轉換層
117-4...第四波長轉換層
118、518...導電層
121...支持基板
122...反射層
123...非單晶相接合層
320、520...交流式電源
600...顯示裝置
601...背光源模組
602...第一偏光模組
603...薄膜電晶體模組
604...液晶模組
605...第二偏光模組
606...彩色濾光模組
607...控制模
AA’...剖面線
B...藍色濾光區塊
C...透光區塊
R...紅色濾光區塊
R1、R2、R3、R4...發光單元
第1圖顯示依本發明第一實施例之發光二極體晶粒上視圖;
第2圖顯示依本發明第一實施例之發光二極體晶粒剖面結構圖;
第3圖顯示依本發明第一實施例所形成之發光元件電路圖及時脈圖;
第4圖顯示依本發明第二實施例之發光二極體晶粒剖面結構圖;
第5圖顯示依本發明第三實施例之發光二極體晶粒上視圖;
第6圖顯示依本發明之顯示裝置之一實施例。
110...發光二極體晶粒
111...成長基板
112...第一接觸層
113...發光層
1131...第一導電型束縛層
1132...活性層
1133...第二導電型束縛層
114...第二接觸層
115...第二電極
116...第一電極
117-1...第一波長轉換層
117-2...第二波長轉換層
118...導電層
119...絕緣層
AA’...剖面線
R1、R3...發光單元
Claims (10)
- 一種發光元件,可發出一白光,包含:一第一發光單元;一第二發光單元;一第一波長轉換層配置於該第一發光單元之上,並可被該第一發光單元發出之光所激發而產生一非該白光之第一光線;一第二波長轉換層配置於該第二發光單元之上,並可被該第二發光單元發出之光所激發而產生一非該白光之第二光線,該第二光線之發射時點及波長範圍與該第一光線不同;及一基板,與該第一波長轉換層分別位於該第一發光單元之相反側。
- 如申請專利範圍第1項所述之發光元件,更包含:一第三發光單元;及一第三波長轉換層配置於該第三發光單元之上,並可被該第三發光單元發出之光所激發而產生一非該白光之第三光線,該第三光線之發射時點及波長範圍與該第二光線不同。
- 如申請專利範圍第2項所述之發光元件,更包含:一第四發光單元;及一第四波長轉換層配置於該第四發光單元之上,並可被該第四發光單元發出之光所激發而產生一非該白光之第四光 線,該第四光線之發射時點及波長範圍與該第一光線不同。
- 如申請專利範圍第3項所述之發光元件,其中該第一光線、該第二光線、該第三光線及該第四光線可混合成該白光。
- 如申請專利範圍第3項所述之發光元件,其中該第一光線及該第三光線之發射時點相同,第二光線及該第四光線之發射時點相同。
- 如申請專利範圍第1項所述之發光元件,,更包含:一第三發光單元,可直接發出一非該白光之第三光線,該第三光線之發射時點及波長範圍與該第二光線不同;一第四發光單元;及一第四波長轉換層配置於該第四發光單元之上,並可被該第四發光單元發出之光所激發而產生一非該白光之第四光線,該第四光線之發射時點及波長範圍與該第一光線不同。
- 如申請專利範圍第6項所述之發光元件,其中該第一光線、該第二光線、該第三光線及該第四光線可混合成該白光。
- 如申請專利範圍第1項所述之發光元件,其中該第一光線及該第二光線之發光時點分屬同一週期內之相異半週期。
- 如申請專利範圍第1項所述之發光元件,其中第一發光單元係磊晶成長於該基板之上。
- 如申請專利範圍第1項所述之發光元件,其中該第一發 光單元及該第二發光單元係反向並聯。
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Also Published As
Publication number | Publication date |
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US8410495B2 (en) | 2013-04-02 |
US20160049444A1 (en) | 2016-02-18 |
US20100213474A1 (en) | 2010-08-26 |
US20130222731A1 (en) | 2013-08-29 |
KR20100097028A (ko) | 2010-09-02 |
TW201032318A (en) | 2010-09-01 |
KR101473277B1 (ko) | 2014-12-16 |
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