JP5992695B2 - 半導体発光素子アレイ及び車両用灯具 - Google Patents
半導体発光素子アレイ及び車両用灯具 Download PDFInfo
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- JP5992695B2 JP5992695B2 JP2012043042A JP2012043042A JP5992695B2 JP 5992695 B2 JP5992695 B2 JP 5992695B2 JP 2012043042 A JP2012043042 A JP 2012043042A JP 2012043042 A JP2012043042 A JP 2012043042A JP 5992695 B2 JP5992695 B2 JP 5992695B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
Description
以上、実施例、及び変形例に沿って本発明を説明したが、本発明はこれらに限定されるものではない。種々の変更、改良、組み合わせ等が可能なことは当業者には自明であろう。
Claims (9)
- 支持基板と、
前記支持基板上に配置される複数の半導体発光素子であって、それぞれが、第1導電型の第1半導体層、該第1半導体層に接して形成される活性層、および、該活性層に接して形成される第2導電型の第2半導体層、を含む半導体積層、ならびに、前記支持基板および前記半導体積層を接合する接合層、を有する複数の半導体発光素子と、
前記複数の半導体発光素子のそれぞれの表面上に、前記複数の半導体発光素子のそれぞれの素子間を跨ぐように配置され、隣接する半導体発光素子の前記半導体積層を連結する連結部であって、電気絶縁性および光導波性を備えるアンドープの半導体で形成された連結部と
を有する半導体発光素子アレイ。 - さらに、前記複数の半導体発光素子の表面に設けられる蛍光体層を有する請求項1記載の半導体発光素子アレイ。
- さらに、前記連結部の前記支持基板側表面に形成される絶縁膜と反射膜とを有する請求項1又は2記載の半導体発光素子アレイ。
- 前記半導体発光素子の上面はn型半導体で構成されており、前記連結部は該n型半導体と連結している請求項1〜3のいずれか1項に記載の半導体発光素子アレイ。
- 前記複数の半導体発光素子は直列接続されている請求項1〜3のいずれか1項に記載の半導体発光素子アレイ。
- 請求項1〜5のいずれか1項に記載の半導体発光素子アレイと、
前記半導体発光素子の照射像を所定の配光形状で照射する光学系と
を有する車両用灯具。 - 複数の半導体発光素子を有する半導体発光素子アレイの製造方法であって、
(a)成長基板を準備する工程と、
(b)前記成長基板上に、アンドープの成長初期層を形成する工程と、
(c)前記成長初期層上に、第1導電型の第1半導体層と、該第1半導体層の上に形成される活性層と、該活性層の上に形成される第2導電型の第2半導体層とを含む半導体積層を成長する工程と、
(c)前記第2半導体層上に第1接合層を形成する工程と、
(d)前記複数の半導体発光素子の素子間となる領域において、前記半導体積層を除去して、前記半導体積層を分離するとともに、前記成長初期層を露出させる工程と、
(e)支持基板を準備する工程と、
(f)前記支持基板上に、第2接合層を形成する工程と、
(g)前記第1接合層と前記第2接合層とを重ね合わせて接合して融着層を形成する工程と、
(h)前記成長基板を前記半導体積層から剥離する工程と、
(i)前記複数の半導体発光素子の素子部となる領域において、前記工程(h)により露出した前記成長初期層を除去して、前記第1半導体層を露出させ、かつ、前記複数の半導体発光素子の素子間となる領域において、前記初期成長層を残して、前記素子部の表面から突出した連結部を形成する工程と、
(j)前記第1半導体層に接して、配線電極を形成する工程と
を含む半導体発光素子アレイの製造方法。 - さらに、(k)前記半導体発光素子アレイの表面に蛍光体層を形成する工程を有する請求項7記載の半導体発光素子アレイの製造方法。
- さらに、前記工程(d)の後に、(l)前記露出した成長初期層上に、絶縁膜と反射膜とを形成する工程を有する請求項7又は8に記載の半導体発光素子アレイの製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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JP2012043042A JP5992695B2 (ja) | 2012-02-29 | 2012-02-29 | 半導体発光素子アレイ及び車両用灯具 |
EP13001005.1A EP2634807A1 (en) | 2012-02-29 | 2013-02-27 | Matrice d'élément électroluminescent semi-conducteur |
US13/779,694 US9035332B2 (en) | 2012-02-29 | 2013-02-27 | Semiconductor light emitting element array |
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JP2012043042A JP5992695B2 (ja) | 2012-02-29 | 2012-02-29 | 半導体発光素子アレイ及び車両用灯具 |
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JP2013179222A JP2013179222A (ja) | 2013-09-09 |
JP5992695B2 true JP5992695B2 (ja) | 2016-09-14 |
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US (1) | US9035332B2 (ja) |
EP (1) | EP2634807A1 (ja) |
JP (1) | JP5992695B2 (ja) |
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US9847372B2 (en) * | 2011-12-01 | 2017-12-19 | Micron Technology, Inc. | Solid state transducer devices with separately controlled regions, and associated systems and methods |
JP6040007B2 (ja) | 2012-11-14 | 2016-12-07 | スタンレー電気株式会社 | 発光装置及びその製造方法 |
KR20150092674A (ko) * | 2014-02-05 | 2015-08-13 | 삼성전자주식회사 | 발광 소자 및 발광 소자 패키지 |
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JP4992282B2 (ja) * | 2005-06-10 | 2012-08-08 | ソニー株式会社 | 発光ダイオード、発光ダイオードの製造方法、発光ダイオードバックライト、発光ダイオード照明装置、発光ダイオードディスプレイおよび電子機器 |
JP2007324581A (ja) * | 2006-05-01 | 2007-12-13 | Mitsubishi Chemicals Corp | 集積型半導体発光装置およびその製造方法 |
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JP5158472B2 (ja) * | 2007-05-24 | 2013-03-06 | スタンレー電気株式会社 | 半導体発光装置 |
KR100872717B1 (ko) * | 2007-06-22 | 2008-12-05 | 엘지이노텍 주식회사 | 발광 소자 및 그 제조방법 |
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JP5468464B2 (ja) * | 2010-05-17 | 2014-04-09 | スタンレー電気株式会社 | 車両用灯具 |
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2012
- 2012-02-29 JP JP2012043042A patent/JP5992695B2/ja active Active
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2013
- 2013-02-27 EP EP13001005.1A patent/EP2634807A1/en not_active Withdrawn
- 2013-02-27 US US13/779,694 patent/US9035332B2/en active Active
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EP2634807A1 (en) | 2013-09-04 |
US20130221384A1 (en) | 2013-08-29 |
US9035332B2 (en) | 2015-05-19 |
JP2013179222A (ja) | 2013-09-09 |
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