JP2013517617A5 - - Google Patents

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Publication number
JP2013517617A5
JP2013517617A5 JP2012548064A JP2012548064A JP2013517617A5 JP 2013517617 A5 JP2013517617 A5 JP 2013517617A5 JP 2012548064 A JP2012548064 A JP 2012548064A JP 2012548064 A JP2012548064 A JP 2012548064A JP 2013517617 A5 JP2013517617 A5 JP 2013517617A5
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Japan
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metal layer
bus
shallow
deep
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JP2012548064A
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JP2013517617A (ja
JP5653453B2 (ja
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Priority claimed from US12/686,003 external-priority patent/US8222698B2/en
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JP2012548064A 2010-01-12 2011-01-03 一体化された過渡過電圧保護を有するボンドパッド Active JP5653453B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/686,003 US8222698B2 (en) 2009-06-29 2010-01-12 Bond pad with integrated transient over-voltage protection
US12/686,003 2010-01-12
PCT/US2011/020036 WO2011087925A1 (en) 2010-01-12 2011-01-03 Bond pad with integrated transient over-voltage protection

Publications (3)

Publication Number Publication Date
JP2013517617A JP2013517617A (ja) 2013-05-16
JP2013517617A5 true JP2013517617A5 (enExample) 2013-06-27
JP5653453B2 JP5653453B2 (ja) 2015-01-14

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JP2012548064A Active JP5653453B2 (ja) 2010-01-12 2011-01-03 一体化された過渡過電圧保護を有するボンドパッド

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US (1) US8222698B2 (enExample)
JP (1) JP5653453B2 (enExample)
CN (1) CN102714205B (enExample)
WO (1) WO2011087925A1 (enExample)

Families Citing this family (59)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2957049B2 (ja) 1991-12-05 1999-10-04 有限会社吉野精機 絞り溝加工用ローラー
JP3060290B2 (ja) 1996-04-30 2000-07-10 株式会社カネミツ 板金製プーリとその製造方法
US9520486B2 (en) 2009-11-04 2016-12-13 Analog Devices, Inc. Electrostatic protection device
US8665571B2 (en) 2011-05-18 2014-03-04 Analog Devices, Inc. Apparatus and method for integrated circuit protection
US8368116B2 (en) 2010-06-09 2013-02-05 Analog Devices, Inc. Apparatus and method for protecting electronic circuits
US8432651B2 (en) 2010-06-09 2013-04-30 Analog Devices, Inc. Apparatus and method for electronic systems reliability
EP2405466B1 (en) * 2010-07-05 2014-04-23 ams AG Symmetric LDMOS transistor and method of production
US8553380B2 (en) 2010-07-08 2013-10-08 Analog Devices, Inc. Apparatus and method for electronic circuit protection
US8416543B2 (en) 2010-07-08 2013-04-09 Analog Devices, Inc. Apparatus and method for electronic circuit protection
US10199482B2 (en) 2010-11-29 2019-02-05 Analog Devices, Inc. Apparatus for electrostatic discharge protection
JP5703790B2 (ja) * 2011-01-31 2015-04-22 富士通セミコンダクター株式会社 半導体装置及びその製造方法
US8466489B2 (en) 2011-02-04 2013-06-18 Analog Devices, Inc. Apparatus and method for transient electrical overstress protection
US8592860B2 (en) 2011-02-11 2013-11-26 Analog Devices, Inc. Apparatus and method for protection of electronic circuits operating under high stress conditions
US8680620B2 (en) 2011-08-04 2014-03-25 Analog Devices, Inc. Bi-directional blocking voltage protection devices and methods of forming the same
US8947841B2 (en) 2012-02-13 2015-02-03 Analog Devices, Inc. Protection systems for integrated circuits and methods of forming the same
US8829570B2 (en) 2012-03-09 2014-09-09 Analog Devices, Inc. Switching device for heterojunction integrated circuits and methods of forming the same
US8946822B2 (en) 2012-03-19 2015-02-03 Analog Devices, Inc. Apparatus and method for protection of precision mixed-signal electronic circuits
US8691655B2 (en) * 2012-05-15 2014-04-08 Taiwan Semiconductor Manufacturing Company, Ltd. Method of semiconductor integrated circuit fabrication
US8610251B1 (en) 2012-06-01 2013-12-17 Analog Devices, Inc. Low voltage protection devices for precision transceivers and methods of forming the same
US8637899B2 (en) 2012-06-08 2014-01-28 Analog Devices, Inc. Method and apparatus for protection and high voltage isolation of low voltage communication interface terminals
US8796729B2 (en) 2012-11-20 2014-08-05 Analog Devices, Inc. Junction-isolated blocking voltage devices with integrated protection structures and methods of forming the same
US9006781B2 (en) 2012-12-19 2015-04-14 Analog Devices, Inc. Devices for monolithic data conversion interface protection and methods of forming the same
US8860080B2 (en) 2012-12-19 2014-10-14 Analog Devices, Inc. Interface protection device with integrated supply clamp and method of forming the same
US9123540B2 (en) 2013-01-30 2015-09-01 Analog Devices, Inc. Apparatus for high speed signal processing interface
US9275991B2 (en) 2013-02-13 2016-03-01 Analog Devices, Inc. Apparatus for transceiver signal isolation and voltage clamp
US9147677B2 (en) 2013-05-16 2015-09-29 Analog Devices Global Dual-tub junction-isolated voltage clamp devices for protecting low voltage circuitry connected between high voltage interface pins and methods of forming the same
US9171832B2 (en) 2013-05-24 2015-10-27 Analog Devices, Inc. Analog switch with high bipolar blocking voltage in low voltage CMOS process
CN104752423B (zh) 2013-12-31 2018-08-21 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制造方法和电子装置
US9318564B2 (en) * 2014-05-19 2016-04-19 Qualcomm Incorporated High density static random access memory array having advanced metal patterning
US9484739B2 (en) 2014-09-25 2016-11-01 Analog Devices Global Overvoltage protection device and method
US9478608B2 (en) 2014-11-18 2016-10-25 Analog Devices, Inc. Apparatus and methods for transceiver interface overvoltage clamping
US10068894B2 (en) 2015-01-12 2018-09-04 Analog Devices, Inc. Low leakage bidirectional clamps and methods of forming the same
US10181719B2 (en) 2015-03-16 2019-01-15 Analog Devices Global Overvoltage blocking protection device
US9673187B2 (en) 2015-04-07 2017-06-06 Analog Devices, Inc. High speed interface protection apparatus
US10158029B2 (en) 2016-02-23 2018-12-18 Analog Devices, Inc. Apparatus and methods for robust overstress protection in compound semiconductor circuit applications
US10199369B2 (en) 2016-03-04 2019-02-05 Analog Devices, Inc. Apparatus and methods for actively-controlled transient overstress protection with false condition shutdown
CN105789332B (zh) * 2016-04-25 2019-02-26 矽力杰半导体技术(杭州)有限公司 整流器件、整流器件的制造方法及esd保护器件
US9831233B2 (en) 2016-04-29 2017-11-28 Analog Devices Global Apparatuses for communication systems transceiver interfaces
US10177566B2 (en) 2016-06-21 2019-01-08 Analog Devices, Inc. Apparatus and methods for actively-controlled trigger and latch release thyristor
US10734806B2 (en) 2016-07-21 2020-08-04 Analog Devices, Inc. High voltage clamps with transient activation and activation release control
US10861845B2 (en) 2016-12-06 2020-12-08 Analog Devices, Inc. Active interface resistance modulation switch
US10319714B2 (en) 2017-01-24 2019-06-11 Analog Devices, Inc. Drain-extended metal-oxide-semiconductor bipolar switch for electrical overstress protection
US10404059B2 (en) 2017-02-09 2019-09-03 Analog Devices, Inc. Distributed switches to suppress transient electrical overstress-induced latch-up
US10249609B2 (en) 2017-08-10 2019-04-02 Analog Devices, Inc. Apparatuses for communication systems transceiver interfaces
US10608431B2 (en) 2017-10-26 2020-03-31 Analog Devices, Inc. Silicon controlled rectifier dynamic triggering and shutdown via control signal amplification
US10581423B1 (en) 2018-08-17 2020-03-03 Analog Devices Global Unlimited Company Fault tolerant low leakage switch
US11094688B2 (en) 2018-08-23 2021-08-17 Analog Devices International Unlimited Company Isolation architecture
US10700056B2 (en) 2018-09-07 2020-06-30 Analog Devices, Inc. Apparatus for automotive and communication systems transceiver interfaces
US11387648B2 (en) 2019-01-10 2022-07-12 Analog Devices International Unlimited Company Electrical overstress protection with low leakage current for high voltage tolerant high speed interfaces
US11004849B2 (en) 2019-03-06 2021-05-11 Analog Devices, Inc. Distributed electrical overstress protection for large density and high data rate communication applications
US11469717B2 (en) 2019-05-03 2022-10-11 Analog Devices International Unlimited Company Microwave amplifiers tolerant to electrical overstress
DE102020111863A1 (de) 2019-05-03 2020-11-05 Analog Devices International Unlimited Company Gegen elektrische Überlastung tolerante Mikrowellenverstärker
US12032014B2 (en) 2019-09-09 2024-07-09 Analog Devices International Unlimited Company Semiconductor device configured for gate dielectric monitoring
DE102020123481A1 (de) 2019-09-09 2021-03-11 Analog Devices International Unlimited Company Halbleitervorrichtung, die zur gate-dielektrikum-überwachung ausgebildet ist
US11302687B2 (en) 2019-10-30 2022-04-12 Globalfoundries Singapore Pte. Ltd. Semiconductor device and method of forming the same
US11552190B2 (en) 2019-12-12 2023-01-10 Analog Devices International Unlimited Company High voltage double-diffused metal oxide semiconductor transistor with isolated parasitic bipolar junction transistor region
US11558018B2 (en) 2020-01-29 2023-01-17 Nxp Usa, Inc. Integrated circuits containing vertically-integrated capacitor-avalanche diode structures
US11595036B2 (en) 2020-04-30 2023-02-28 Analog Devices, Inc. FinFET thyristors for protecting high-speed communication interfaces
US12477836B2 (en) 2023-12-08 2025-11-18 Analog Devices, Inc. Low capacitance silicon controlled rectifier topology for overvoltage protection

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5008A (en) * 1847-03-13 Machinery for cleaning
US4626882A (en) 1984-07-18 1986-12-02 International Business Machines Corporation Twin diode overvoltage protection structure
TW299495B (en) 1996-05-03 1997-03-01 Winbond Electronics Corp Electrostatic discharge protection circuit
US5663860A (en) 1996-06-28 1997-09-02 Harris Corporation High voltage protection circuits
US6137140A (en) 1997-11-26 2000-10-24 Texas Instruments Incorporated Integrated SCR-LDMOS power device
US6236087B1 (en) 1998-11-02 2001-05-22 Analog Devices, Inc. SCR cell for electrical overstress protection of electronic circuits
US6512662B1 (en) 1999-11-30 2003-01-28 Illinois Institute Of Technology Single structure all-direction ESD protection for integrated circuits
JP4357127B2 (ja) * 2000-03-03 2009-11-04 株式会社東芝 半導体装置
JP2001339047A (ja) * 2000-05-29 2001-12-07 Matsushita Electric Ind Co Ltd 半導体装置
JP4065104B2 (ja) 2000-12-25 2008-03-19 三洋電機株式会社 半導体集積回路装置およびその製造方法
TW511269B (en) 2001-03-05 2002-11-21 Taiwan Semiconductor Mfg Silicon-controlled rectifier device having deep well region structure and its application on electrostatic discharge protection circuit
US6667870B1 (en) 2001-12-12 2003-12-23 Natiional Semiconductor Corporation Fully distributed slave ESD clamps formed under the bond pads
US6909149B2 (en) 2003-04-16 2005-06-21 Sarnoff Corporation Low voltage silicon controlled rectifier (SCR) for electrostatic discharge (ESD) protection of silicon-on-insulator technologies
US7038280B2 (en) 2003-10-28 2006-05-02 Analog Devices, Inc. Integrated circuit bond pad structures and methods of making
US7067883B2 (en) 2003-10-31 2006-06-27 Lattice Semiconductor Corporation Lateral high-voltage junction device
TWI223432B (en) 2003-12-18 2004-11-01 Univ Nat Chiao Tung Double-triggered silicon controller rectifier and relevant circuitry
US7202114B2 (en) 2004-01-13 2007-04-10 Intersil Americas Inc. On-chip structure for electrostatic discharge (ESD) protection
CN100377321C (zh) 2004-06-28 2008-03-26 中芯国际集成电路制造(上海)有限公司 用于高电压操作的金属氧化物半导体器件及其制造方法
KR100638456B1 (ko) 2004-12-30 2006-10-24 매그나칩 반도체 유한회사 이에스디 보호회로 및 그 제조방법
JP4682622B2 (ja) * 2005-01-11 2011-05-11 セイコーエプソン株式会社 半導体装置
US7414287B2 (en) 2005-02-21 2008-08-19 Texas Instruments Incorporated System and method for making a LDMOS device with electrostatic discharge protection
JP4995455B2 (ja) * 2005-11-30 2012-08-08 ルネサスエレクトロニクス株式会社 半導体装置
US7345341B2 (en) 2006-02-09 2008-03-18 Taiwan Semiconductor Manufacturing Co., Ltd. High voltage semiconductor devices and methods for fabricating the same
US7605431B2 (en) 2006-09-20 2009-10-20 Himax Technologies Limited Electrostatic discharge protection apparatus for semiconductor devices
JP2009071173A (ja) * 2007-09-14 2009-04-02 Panasonic Corp 半導体装置
US7868387B2 (en) 2008-06-13 2011-01-11 Analog Devices, Inc. Low leakage protection device

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