JP5653453B2 - 一体化された過渡過電圧保護を有するボンドパッド - Google Patents

一体化された過渡過電圧保護を有するボンドパッド Download PDF

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JP5653453B2
JP5653453B2 JP2012548064A JP2012548064A JP5653453B2 JP 5653453 B2 JP5653453 B2 JP 5653453B2 JP 2012548064 A JP2012548064 A JP 2012548064A JP 2012548064 A JP2012548064 A JP 2012548064A JP 5653453 B2 JP5653453 B2 JP 5653453B2
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JP2013517617A5 (enExample
JP2013517617A (ja
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ハビヤー サルセード，
ハビヤー サルセード，
アレン ライター，
アレン ライター，
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アナログ デバイシス， インコーポレイテッド
アナログ デバイシス， インコーポレイテッド
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    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/711—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using bipolar transistors as protective elements
    • H10D89/713—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using bipolar transistors as protective elements including a PNP transistor and a NPN transistor, wherein each of said transistors has its base region coupled to the collector region of the other transistor, e.g. silicon controlled rectifier [SCR] devices
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2012548064A 2010-01-12 2011-01-03 一体化された過渡過電圧保護を有するボンドパッド Active JP5653453B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/686,003 2010-01-12
US12/686,003 US8222698B2 (en) 2009-06-29 2010-01-12 Bond pad with integrated transient over-voltage protection
PCT/US2011/020036 WO2011087925A1 (en) 2010-01-12 2011-01-03 Bond pad with integrated transient over-voltage protection

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JP2013517617A JP2013517617A (ja) 2013-05-16
JP2013517617A5 JP2013517617A5 (enExample) 2013-06-27
JP5653453B2 true JP5653453B2 (ja) 2015-01-14

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US (1) US8222698B2 (enExample)
JP (1) JP5653453B2 (enExample)
CN (1) CN102714205B (enExample)
WO (1) WO2011087925A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
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JP2957049B2 (ja) 1991-12-05 1999-10-04 有限会社吉野精機 絞り溝加工用ローラー
JP3060290B2 (ja) 1996-04-30 2000-07-10 株式会社カネミツ 板金製プーリとその製造方法

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