JP2019165180A5 - - Google Patents

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Publication number
JP2019165180A5
JP2019165180A5 JP2018053338A JP2018053338A JP2019165180A5 JP 2019165180 A5 JP2019165180 A5 JP 2019165180A5 JP 2018053338 A JP2018053338 A JP 2018053338A JP 2018053338 A JP2018053338 A JP 2018053338A JP 2019165180 A5 JP2019165180 A5 JP 2019165180A5
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JP
Japan
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semiconductor region
conductivity type
semiconductor
region
electrode
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Application number
JP2018053338A
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English (en)
Japanese (ja)
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JP2019165180A (ja
JP6935351B2 (ja
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Priority to JP2018053338A priority Critical patent/JP6935351B2/ja
Priority claimed from JP2018053338A external-priority patent/JP6935351B2/ja
Priority to CN201810844576.4A priority patent/CN110310990B/zh
Priority to US16/120,771 priority patent/US10700184B2/en
Publication of JP2019165180A publication Critical patent/JP2019165180A/ja
Publication of JP2019165180A5 publication Critical patent/JP2019165180A5/ja
Application granted granted Critical
Publication of JP6935351B2 publication Critical patent/JP6935351B2/ja
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JP2018053338A 2018-03-20 2018-03-20 半導体装置 Active JP6935351B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2018053338A JP6935351B2 (ja) 2018-03-20 2018-03-20 半導体装置
CN201810844576.4A CN110310990B (zh) 2018-03-20 2018-07-27 半导体装置
US16/120,771 US10700184B2 (en) 2018-03-20 2018-09-04 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018053338A JP6935351B2 (ja) 2018-03-20 2018-03-20 半導体装置

Publications (3)

Publication Number Publication Date
JP2019165180A JP2019165180A (ja) 2019-09-26
JP2019165180A5 true JP2019165180A5 (enExample) 2020-03-19
JP6935351B2 JP6935351B2 (ja) 2021-09-15

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ID=67985526

Family Applications (1)

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JP2018053338A Active JP6935351B2 (ja) 2018-03-20 2018-03-20 半導体装置

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US (1) US10700184B2 (enExample)
JP (1) JP6935351B2 (enExample)
CN (1) CN110310990B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109979935B (zh) * 2017-12-28 2025-04-22 富士电机株式会社 半导体装置及半导体装置的制造方法
JP7204544B2 (ja) * 2019-03-14 2023-01-16 株式会社東芝 半導体装置
JP2021128993A (ja) * 2020-02-13 2021-09-02 サンケン電気株式会社 半導体装置およびスイッチングシステム
JP7296907B2 (ja) * 2020-03-10 2023-06-23 株式会社東芝 半導体装置
CN111987089A (zh) * 2020-08-19 2020-11-24 株洲中车时代半导体有限公司 逆导型igbt功率集成模块
JP2023135082A (ja) * 2022-03-15 2023-09-28 富士電機株式会社 半導体装置
JP2024041096A (ja) * 2022-09-14 2024-03-27 株式会社東芝 半導体装置

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05152574A (ja) * 1991-11-29 1993-06-18 Fuji Electric Co Ltd 半導体装置
JP4156717B2 (ja) * 1998-01-13 2008-09-24 三菱電機株式会社 半導体装置
JP4070485B2 (ja) * 2001-05-09 2008-04-02 株式会社東芝 半導体装置
DE102006050338B4 (de) * 2006-10-25 2011-12-29 Infineon Technologies Austria Ag Halbleiterbauelement mit verbessertem Speicherladung zu Dioden-Softness Trade-off
JP5206541B2 (ja) * 2008-04-01 2013-06-12 株式会社デンソー 半導体装置およびその製造方法
US7932583B2 (en) * 2008-05-13 2011-04-26 Infineon Technologies Austria Ag Reduced free-charge carrier lifetime device
JP2010183018A (ja) * 2009-02-09 2010-08-19 Toshiba Corp 半導体装置
JP5515922B2 (ja) * 2010-03-24 2014-06-11 富士電機株式会社 半導体装置
JP5678469B2 (ja) * 2010-05-07 2015-03-04 株式会社デンソー 半導体装置
JP6301776B2 (ja) * 2010-05-26 2018-03-28 三菱電機株式会社 半導体装置
JP5582102B2 (ja) * 2010-07-01 2014-09-03 株式会社デンソー 半導体装置
US8384151B2 (en) * 2011-01-17 2013-02-26 Infineon Technologies Austria Ag Semiconductor device and a reverse conducting IGBT
WO2013014943A2 (en) * 2011-07-27 2013-01-31 Kabushiki Kaisha Toyota Chuo Kenkyusho Diode, semiconductor device, and mosfet
JP5742711B2 (ja) 2011-12-28 2015-07-01 株式会社デンソー 半導体装置
JP2013149761A (ja) * 2012-01-18 2013-08-01 Fuji Electric Co Ltd 半導体装置
DE112012007249B4 (de) * 2012-12-20 2021-02-04 Denso Corporation Halbleitervorrichtung
US9337270B2 (en) * 2013-12-19 2016-05-10 Infineon Technologies Ag Semiconductor device
JP2015170654A (ja) * 2014-03-05 2015-09-28 株式会社東芝 半導体装置
JP6158123B2 (ja) * 2014-03-14 2017-07-05 株式会社東芝 半導体装置
JP6197773B2 (ja) 2014-09-29 2017-09-20 トヨタ自動車株式会社 半導体装置
JP6392133B2 (ja) * 2015-01-28 2018-09-19 株式会社東芝 半導体装置
JP6274154B2 (ja) * 2015-05-27 2018-02-07 トヨタ自動車株式会社 逆導通ｉｇｂｔ
JP6445952B2 (ja) * 2015-10-19 2018-12-26 株式会社東芝 半導体装置
CN107086217B (zh) * 2016-02-16 2023-05-16 富士电机株式会社 半导体装置
JP2016195271A (ja) * 2016-07-04 2016-11-17 三菱電機株式会社 半導体装置
JP6652515B2 (ja) 2017-02-09 2020-02-26 株式会社東芝 半導体装置
US10439038B2 (en) * 2017-02-09 2019-10-08 Kabushiki Kaisha Toshiba Semiconductor device and electrical apparatus
JP2019145708A (ja) * 2018-02-22 2019-08-29 株式会社東芝 半導体装置
US10636898B2 (en) * 2018-08-15 2020-04-28 Kabushiki Kaisha Toshiba Semiconductor device

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