JPWO2022239284A5 - - Google Patents

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Publication number
JPWO2022239284A5
JPWO2022239284A5 JP2023520756A JP2023520756A JPWO2022239284A5 JP WO2022239284 A5 JPWO2022239284 A5 JP WO2022239284A5 JP 2023520756 A JP2023520756 A JP 2023520756A JP 2023520756 A JP2023520756 A JP 2023520756A JP WO2022239284 A5 JPWO2022239284 A5 JP WO2022239284A5
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JP
Japan
Prior art keywords
semiconductor device
section
region
trench
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2023520756A
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English (en)
Japanese (ja)
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JPWO2022239284A1 (enExample
JP7613569B2 (ja
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Priority claimed from PCT/JP2021/045100 external-priority patent/WO2022239284A1/ja
Publication of JPWO2022239284A1 publication Critical patent/JPWO2022239284A1/ja
Publication of JPWO2022239284A5 publication Critical patent/JPWO2022239284A5/ja
Application granted granted Critical
Publication of JP7613569B2 publication Critical patent/JP7613569B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2023520756A 2021-05-11 2021-12-08 半導体装置 Active JP7613569B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021080620 2021-05-11
JP2021080620 2021-05-11
PCT/JP2021/045100 WO2022239284A1 (ja) 2021-05-11 2021-12-08 半導体装置

Publications (3)

Publication Number Publication Date
JPWO2022239284A1 JPWO2022239284A1 (enExample) 2022-11-17
JPWO2022239284A5 true JPWO2022239284A5 (enExample) 2023-07-18
JP7613569B2 JP7613569B2 (ja) 2025-01-15

Family

ID=84028076

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023520756A Active JP7613569B2 (ja) 2021-05-11 2021-12-08 半導体装置

Country Status (5)

Country Link
US (1) US20230268342A1 (enExample)
JP (1) JP7613569B2 (enExample)
CN (1) CN116420219A (enExample)
DE (1) DE112021004621T5 (enExample)
WO (1) WO2022239284A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117561612A (zh) * 2022-01-20 2024-02-13 富士电机株式会社 半导体装置
TW202531876A (zh) * 2024-01-22 2025-08-01 日商新電元工業股份有限公司 半導體裝置
JP2025132606A (ja) * 2024-02-29 2025-09-10 ミネベアパワーデバイス株式会社 半導体装置、および、電力変換装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4500530B2 (ja) * 2003-11-05 2010-07-14 トヨタ自動車株式会社 絶縁ゲート型半導体装置およびその製造方法
US7923815B2 (en) * 2008-01-07 2011-04-12 International Business Machines Corporation DRAM having deep trench capacitors with lightly doped buried plates
JP2016162855A (ja) * 2015-02-27 2016-09-05 株式会社日立製作所 半導体装置およびそれを用いた電力変換装置
DE112017000297T5 (de) * 2016-08-12 2018-11-15 Fuji Electric Co., Ltd. Halbleiterbauteil und Herstellungsverfahren eines Halbleiterbauteils
JP7325931B2 (ja) * 2017-05-16 2023-08-15 富士電機株式会社 半導体装置
DE102017124871B4 (de) 2017-10-24 2021-06-17 Infineon Technologies Ag Leistungshalbleiter-Vorrichtung und Verfahren zum Herstellen einer Leistungshalbleiter-Vorrichtung
JP7102808B2 (ja) * 2018-03-15 2022-07-20 富士電機株式会社 半導体装置
JP6992895B2 (ja) * 2018-06-21 2022-01-13 富士電機株式会社 半導体装置および製造方法
JP7404702B2 (ja) * 2019-08-09 2023-12-26 富士電機株式会社 半導体装置

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