JP7404702B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP7404702B2 JP7404702B2 JP2019147282A JP2019147282A JP7404702B2 JP 7404702 B2 JP7404702 B2 JP 7404702B2 JP 2019147282 A JP2019147282 A JP 2019147282A JP 2019147282 A JP2019147282 A JP 2019147282A JP 7404702 B2 JP7404702 B2 JP 7404702B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- transistor
- semiconductor substrate
- width
- section
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 185
- 239000000758 substrate Substances 0.000 claims description 131
- 230000007547 defect Effects 0.000 claims description 51
- 238000009826 distribution Methods 0.000 claims description 25
- 239000013078 crystal Substances 0.000 claims description 24
- 239000001257 hydrogen Substances 0.000 claims description 12
- 229910052739 hydrogen Inorganic materials 0.000 claims description 12
- 230000002093 peripheral effect Effects 0.000 claims description 7
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 239000011229 interlayer Substances 0.000 description 14
- 239000001307 helium Substances 0.000 description 13
- 229910052734 helium Inorganic materials 0.000 description 13
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 13
- 230000007423 decrease Effects 0.000 description 12
- 238000010586 diagram Methods 0.000 description 12
- 239000012535 impurity Substances 0.000 description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 9
- 239000001301 oxygen Substances 0.000 description 9
- 229910052760 oxygen Inorganic materials 0.000 description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 7
- 230000020169 heat generation Effects 0.000 description 7
- 238000011084 recovery Methods 0.000 description 7
- 238000009825 accumulation Methods 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 239000000370 acceptor Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 230000005684 electric field Effects 0.000 description 3
- -1 hydrogen ions Chemical class 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000691 measurement method Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- 230000007480 spreading Effects 0.000 description 2
- DETVQFQGSVEQBH-UHFFFAOYSA-N 1,1'-Ethylidenebistryptophan Chemical compound C1=C(CC(N)C(O)=O)C2=CC=CC=C2N1C(C)N1C2=CC=CC=C2C(CC(N)C(O)=O)=C1 DETVQFQGSVEQBH-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 150000003609 titanium compounds Chemical class 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8613—Mesa PN junction diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
- H01L27/0211—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique adapted for requirements of temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
- H01L29/32—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being within the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Description
特許文献1 特開2018-46187号公報
特許文献2 特開2013-138069号公報
特許文献3 特開2018-78153号公報
Claims (12)
- 第1導電型のドリフト領域が設けられた半導体基板と、
前記半導体基板の下面と接する第2導電型のコレクタ領域を有するトランジスタ部と、
前記半導体基板の下面と接する第1導電型のカソード領域を有し、前記半導体基板の上面における配列方向に沿って前記トランジスタ部と交互に配置されたダイオード部と
を備え、
前記トランジスタ部のうち、前記半導体基板の前記配列方向における中央に近いものから順番に選択した2つ以上の第1のトランジスタ部のそれぞれは、前記配列方向において第1の幅を有し、
前記トランジスタ部のうち、前記第1のトランジスタ部よりも前記中央から離れて配置された2つ以上の第2のトランジスタ部のそれぞれは、前記配列方向において前記第1の幅よりも小さい第2の幅を有し、
前記第1の幅は、700μmより大きく、1100μmより小さい
半導体装置。 - 第1導電型のドリフト領域が設けられた半導体基板と、
前記半導体基板の下面と接する第2導電型のコレクタ領域を有するトランジスタ部と、
前記半導体基板の下面と接する第1導電型のカソード領域を有し、前記半導体基板の上面における配列方向に沿って前記トランジスタ部と交互に配置されたダイオード部と
を備え、
前記トランジスタ部のうち、前記半導体基板の前記配列方向における中央に近いものから順番に選択した2つ以上の前記トランジスタ部の前記配列方向における幅が、他のいずれかの前記トランジスタ部の前記配列方向における幅よりも大きく、
それぞれの前記ダイオード部の前記配列方向における幅は、前記半導体基板の厚みの2.5倍より大きい
半導体装置。 - 第1導電型のドリフト領域が設けられた半導体基板と、
前記半導体基板の下面と接する第2導電型のコレクタ領域を有するトランジスタ部と、
前記半導体基板の下面と接する第1導電型のカソード領域を有し、前記半導体基板の上面における配列方向に沿って前記トランジスタ部と交互に配置されたダイオード部と
を備え、
前記トランジスタ部のうち、前記半導体基板の前記配列方向における中央に近いものから順番に選択した2つ以上の前記トランジスタ部の前記配列方向における幅が、他のいずれかの前記トランジスタ部の前記配列方向における幅よりも大きく、
前記トランジスタ部に電気的に接続されたゲートパッドを更に備え、
前記ゲートパッドに最も近い前記ダイオード部と前記ゲートパッドとの前記配列方向における距離が、当該ダイオード部の前記配列方向における幅よりも大きい
半導体装置。 - 前記第2の幅を前記第1の幅で除算した値は、0.5より大きく、1より小さい
請求項1に記載の半導体装置。 - それぞれの前記ダイオード部の前記配列方向における幅は、300μmより大きく700μmより小さい
請求項1に記載の半導体装置。 - それぞれの前記ダイオード部は、前記配列方向において同一の幅を有する
請求項1から5のいずれか一項に記載の半導体装置。 - 前記トランジスタ部のうち、前記半導体基板の前記配列方向における中央に最も近い第1のトランジスタ部の前記配列方向における幅は、前記第1のトランジスタ部よりも前記中央から離れた第2のトランジスタ部の前記配列方向における幅よりも大きく、前記第2のトランジスタ部の前記配列方向における幅は、前記第2のトランジスタ部よりも前記中央から離れた第3のトランジスタ部の前記配列方向における幅よりも大きい
請求項2または3に記載の半導体装置。 - 前記半導体基板の上面において、前記トランジスタ部および前記ダイオード部が前記配列方向に沿って交互に配置された領域を囲んで設けられた外周ダイオード部を更に備える
請求項1から7のいずれか一項に記載の半導体装置。 - 前記ドリフト領域と前記半導体基板の下面との間に設けられ、水素を含み、前記ドリフト領域よりもドーピング濃度の高い濃度ピークを前記半導体基板の深さ方向に複数有する第1導電型のバッファ領域を更に備える
請求項1から8のいずれか一項に記載の半導体装置。 - 前記半導体基板の深さ方向における結晶欠陥密度分布は、前記バッファ領域における前記濃度ピークの間に配置された欠陥密度ピークを有する
請求項9に記載の半導体装置。 - 前記ドリフト領域と前記半導体基板の下面との間に設けられ、リンを含み、前記ドリフト領域よりもドーピング濃度の高い濃度ピークを前記半導体基板の深さ方向に有する第1導電型のバッファ領域を更に備える
請求項1から8のいずれか一項に記載の半導体装置。 - 前記半導体基板の深さ方向における結晶欠陥密度分布は、前記バッファ領域における前記濃度ピークより下面からの距離が長い位置に欠陥密度ピークを有する
請求項9に記載の半導体装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019147282A JP7404702B2 (ja) | 2019-08-09 | 2019-08-09 | 半導体装置 |
CN202010572103.0A CN112349766A (zh) | 2019-08-09 | 2020-06-22 | 半导体装置 |
US16/910,107 US11532738B2 (en) | 2019-08-09 | 2020-06-24 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019147282A JP7404702B2 (ja) | 2019-08-09 | 2019-08-09 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2021028930A JP2021028930A (ja) | 2021-02-25 |
JP7404702B2 true JP7404702B2 (ja) | 2023-12-26 |
Family
ID=74358233
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019147282A Active JP7404702B2 (ja) | 2019-08-09 | 2019-08-09 | 半導体装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US11532738B2 (ja) |
JP (1) | JP7404702B2 (ja) |
CN (1) | CN112349766A (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN116325103A (zh) * | 2021-04-14 | 2023-06-23 | 富士电机株式会社 | 半导体装置以及半导体模块 |
WO2022239284A1 (ja) * | 2021-05-11 | 2022-11-17 | 富士電機株式会社 | 半導体装置 |
JPWO2022239285A1 (ja) * | 2021-05-11 | 2022-11-17 | ||
JP2023161772A (ja) | 2022-04-26 | 2023-11-08 | 三菱電機株式会社 | 半導体装置および電力変換装置 |
WO2024135114A1 (ja) * | 2022-12-22 | 2024-06-27 | 富士電機株式会社 | 半導体装置および半導体モジュール |
US20240332288A1 (en) | 2023-03-31 | 2024-10-03 | Mitsubishi Electric Corporation | Semiconductor device |
CN117374120B (zh) * | 2023-09-28 | 2024-08-16 | 海信家电集团股份有限公司 | 半导体装置 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004363328A (ja) | 2003-06-04 | 2004-12-24 | Fuji Electric Device Technology Co Ltd | 半導体装置およびその製造方法 |
JP2004363327A (ja) | 2003-06-04 | 2004-12-24 | Fuji Electric Device Technology Co Ltd | 半導体装置 |
JP2010263215A (ja) | 2009-04-29 | 2010-11-18 | Abb Technology Ag | 逆導電半導体デバイス |
WO2016204227A1 (ja) | 2015-06-17 | 2016-12-22 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
JP2017135339A (ja) | 2016-01-29 | 2017-08-03 | 株式会社デンソー | 半導体装置 |
WO2017146148A1 (ja) | 2016-02-23 | 2017-08-31 | 富士電機株式会社 | 半導体装置 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5742711B2 (ja) | 2011-12-28 | 2015-07-01 | 株式会社デンソー | 半導体装置 |
JP6443267B2 (ja) * | 2015-08-28 | 2018-12-26 | 株式会社デンソー | 半導体装置 |
JP6830767B2 (ja) * | 2016-06-14 | 2021-02-17 | 株式会社デンソー | 半導体装置 |
JP6801324B2 (ja) | 2016-09-15 | 2020-12-16 | 富士電機株式会社 | 半導体装置 |
JP2018078153A (ja) | 2016-11-07 | 2018-05-17 | トヨタ自動車株式会社 | 半導体装置 |
JP7395844B2 (ja) * | 2019-05-14 | 2023-12-12 | 富士電機株式会社 | 半導体装置および製造方法 |
-
2019
- 2019-08-09 JP JP2019147282A patent/JP7404702B2/ja active Active
-
2020
- 2020-06-22 CN CN202010572103.0A patent/CN112349766A/zh active Pending
- 2020-06-24 US US16/910,107 patent/US11532738B2/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004363328A (ja) | 2003-06-04 | 2004-12-24 | Fuji Electric Device Technology Co Ltd | 半導体装置およびその製造方法 |
JP2004363327A (ja) | 2003-06-04 | 2004-12-24 | Fuji Electric Device Technology Co Ltd | 半導体装置 |
JP2010263215A (ja) | 2009-04-29 | 2010-11-18 | Abb Technology Ag | 逆導電半導体デバイス |
WO2016204227A1 (ja) | 2015-06-17 | 2016-12-22 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
JP2017135339A (ja) | 2016-01-29 | 2017-08-03 | 株式会社デンソー | 半導体装置 |
WO2017146148A1 (ja) | 2016-02-23 | 2017-08-31 | 富士電機株式会社 | 半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
JP2021028930A (ja) | 2021-02-25 |
US11532738B2 (en) | 2022-12-20 |
CN112349766A (zh) | 2021-02-09 |
US20210043758A1 (en) | 2021-02-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7404702B2 (ja) | 半導体装置 | |
JP2022141955A (ja) | 半導体装置 | |
JP5787853B2 (ja) | 電力用半導体装置 | |
JP2019195093A (ja) | 半導体装置 | |
JP7456520B2 (ja) | 半導体装置 | |
JP7346889B2 (ja) | 半導体装置 | |
JP7268743B2 (ja) | 半導体装置 | |
JP2022123036A (ja) | 半導体装置 | |
JP2019096855A (ja) | 半導体装置 | |
WO2022239285A1 (ja) | 半導体装置 | |
JP7211516B2 (ja) | 半導体装置 | |
JPWO2020162013A1 (ja) | 半導体装置 | |
US20220149191A1 (en) | Semiconductor device | |
JP7456113B2 (ja) | 半導体装置 | |
JP7395844B2 (ja) | 半導体装置および製造方法 | |
JP6996621B2 (ja) | 半導体装置 | |
JP6658955B2 (ja) | 半導体装置 | |
JP7231064B2 (ja) | 半導体装置 | |
WO2022239284A1 (ja) | 半導体装置 | |
JP7459976B2 (ja) | 半導体装置 | |
JP2022179212A (ja) | 半導体装置 | |
JP7156495B2 (ja) | 半導体装置 | |
JP7351419B2 (ja) | 半導体装置および半導体装置の製造方法 | |
WO2023063411A1 (ja) | 半導体装置 | |
JP2024035557A (ja) | 半導体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20220713 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20230720 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20230725 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230922 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20231114 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20231127 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7404702 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |