JP7351419B2 - 半導体装置および半導体装置の製造方法 - Google Patents
半導体装置および半導体装置の製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 13
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
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- 239000007943 implant Substances 0.000 description 2
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Description
特許文献1 特開2019-195093号公報
特許文献2 特開2018-182279号公報
特許文献3 特開2008-34794号公報
特許文献4 WO2018/52098号
Claims (17)
- 半導体基板を備える半導体装置であって、
前記半導体基板は、
第1導電型のドリフト領域と、
前記ドリフト領域と前記半導体基板の上面との間に設けられた第2導電型のベース領域と、
前記半導体基板の上面において予め定められた延伸方向に延伸して設けられ、前記半導体基板の上面から前記ドリフト領域まで設けられた2つのトレンチ部と、
前記2つのトレンチ部の間に設けられたメサ部と
を有し、
前記2つのトレンチ部の少なくとも一方はゲートトレンチ部であり、
前記メサ部は、
前記メサ部の上面に露出して設けられ、前記2つのトレンチ部の両方と接して設けられた、前記ドリフト領域よりもドーピング濃度の高い第1導電型のエミッタ領域と、
前記延伸方向において、前記エミッタ領域と交互に前記メサ部の上面に露出して設けられ、前記2つのトレンチ部の両方と接して設けられた第2導電型のコンタクト領域と、
上面視において前記エミッタ領域と重なって設けられ、前記ゲートトレンチ部と離れて配置され、前記メサ部の上面よりも下方に配置され、前記延伸方向において前記エミッタ領域を挟む2つの前記コンタクト領域を接続する、前記ベース領域よりもドーピング濃度の高い第2導電型の接続領域と
を有し、
前記接続領域は、前記エミッタ領域の下端よりも上方に配置されている
半導体装置。 - 半導体基板を備える半導体装置であって、
前記半導体基板は、
第1導電型のドリフト領域と、
前記ドリフト領域と前記半導体基板の上面との間に設けられた第2導電型のベース領域と、
前記半導体基板の上面において予め定められた延伸方向に延伸して設けられ、前記半導体基板の上面から前記ドリフト領域まで設けられた2つのトレンチ部と、
前記2つのトレンチ部の間に設けられたメサ部と
を有し、
前記2つのトレンチ部の少なくとも一方はゲートトレンチ部であり、
前記メサ部は、
前記メサ部の上面に露出して設けられ、前記2つのトレンチ部の両方と接して設けられた、前記ドリフト領域よりもドーピング濃度の高い第1導電型のエミッタ領域と、
前記延伸方向において、前記エミッタ領域と交互に前記メサ部の上面に露出して設けられ、前記2つのトレンチ部の両方と接して設けられた第2導電型のコンタクト領域と、
上面視において前記エミッタ領域と重なって設けられ、前記ゲートトレンチ部と離れて配置され、前記メサ部の上面よりも下方に配置され、前記延伸方向において前記エミッタ領域を挟む2つの前記コンタクト領域を接続する、前記ベース領域よりもドーピング濃度の高い第2導電型の接続領域と
を有し、
前記接続領域の下端は、前記コンタクト領域の下端よりも上方に配置されている
半導体装置。 - 半導体基板を備える半導体装置であって、
前記半導体基板は、
第1導電型のドリフト領域と、
前記ドリフト領域と前記半導体基板の上面との間に設けられた第2導電型のベース領域と、
前記半導体基板の上面において予め定められた延伸方向に延伸して設けられ、前記半導体基板の上面から前記ドリフト領域まで設けられた2つのトレンチ部と、
前記2つのトレンチ部の間に設けられたメサ部と
を有し、
前記2つのトレンチ部の少なくとも一方はゲートトレンチ部であり、
前記メサ部は、
前記メサ部の上面に露出して設けられ、前記2つのトレンチ部の両方と接して設けられた、前記ドリフト領域よりもドーピング濃度の高い第1導電型のエミッタ領域と、
前記延伸方向において、前記エミッタ領域と交互に前記メサ部の上面に露出して設けられ、前記2つのトレンチ部の両方と接して設けられた第2導電型のコンタクト領域と、
上面視において前記エミッタ領域と重なって設けられ、前記ゲートトレンチ部と離れて配置され、前記メサ部の上面よりも下方に配置され、前記延伸方向において前記エミッタ領域を挟む2つの前記コンタクト領域を接続する、前記ベース領域よりもドーピング濃度の高い第2導電型の接続領域と
を有し、
前記コンタクト領域および前記接続領域のそれぞれは、前記半導体基板の深さ方向においてドーピング濃度の濃度ピークを有し、
前記接続領域の前記濃度ピークの半値全幅は、前記コンタクト領域の前記濃度ピークの半値全幅の50%以下である
半導体装置。 - 半導体基板を備える半導体装置であって、
前記半導体基板は、
第1導電型のドリフト領域と、
前記ドリフト領域と前記半導体基板の上面との間に設けられた第2導電型のベース領域と、
前記半導体基板の上面において予め定められた延伸方向に延伸して設けられ、前記半導体基板の上面から前記ドリフト領域まで設けられた2つのトレンチ部と、
前記2つのトレンチ部の間に設けられたメサ部と
を有し、
前記2つのトレンチ部の少なくとも一方はゲートトレンチ部であり、
前記メサ部は、
前記メサ部の上面に露出して設けられ、前記2つのトレンチ部の両方と接して設けられた、前記ドリフト領域よりもドーピング濃度の高い第1導電型のエミッタ領域と、
前記延伸方向において、前記エミッタ領域と交互に前記メサ部の上面に露出して設けられ、前記2つのトレンチ部の両方と接して設けられた第2導電型のコンタクト領域と、
上面視において前記エミッタ領域と重なって設けられ、前記ゲートトレンチ部と離れて配置され、前記メサ部の上面よりも下方に配置され、前記延伸方向において前記エミッタ領域を挟む2つの前記コンタクト領域を接続する、前記ベース領域よりもドーピング濃度の高い第2導電型の接続領域と
を有し、
前記接続領域は、前記エミッタ領域の下端よりも下方に配置されている
半導体装置。 - 半導体基板を備える半導体装置であって、
前記半導体基板は、
第1導電型のドリフト領域と、
前記ドリフト領域と前記半導体基板の上面との間に設けられた第2導電型のベース領域と、
前記半導体基板の上面において予め定められた延伸方向に延伸して設けられ、前記半導体基板の上面から前記ドリフト領域まで設けられた2つのトレンチ部と、
前記2つのトレンチ部の間に設けられたメサ部と
を有し、
前記2つのトレンチ部の少なくとも一方はゲートトレンチ部であり、
前記メサ部は、
前記メサ部の上面に露出して設けられ、前記2つのトレンチ部の両方と接して設けられた、前記ドリフト領域よりもドーピング濃度の高い第1導電型のエミッタ領域と、
前記延伸方向において、前記エミッタ領域と交互に前記メサ部の上面に露出して設けられ、前記2つのトレンチ部の両方と接して設けられた第2導電型のコンタクト領域と、
上面視において前記エミッタ領域と重なって設けられ、前記ゲートトレンチ部と離れて配置され、前記メサ部の上面よりも下方に配置され、前記延伸方向において前記エミッタ領域を挟む2つの前記コンタクト領域を接続する、前記ベース領域よりもドーピング濃度の高い第2導電型の接続領域と
を有し、
前記接続領域のドーピング濃度は、前記コンタクト領域のドーピング濃度よりも高い
半導体装置。 - 半導体基板を備える半導体装置であって、
前記半導体基板は、
第1導電型のドリフト領域と、
前記ドリフト領域と前記半導体基板の上面との間に設けられた第2導電型のベース領域と、
前記半導体基板の上面において予め定められた延伸方向に延伸して設けられ、前記半導体基板の上面から前記ドリフト領域まで設けられた2つのトレンチ部と、
前記2つのトレンチ部の間に設けられたメサ部と
を有し、
前記2つのトレンチ部の少なくとも一方はゲートトレンチ部であり、
前記メサ部は、
前記メサ部の上面に露出して設けられ、前記2つのトレンチ部の両方と接して設けられた、前記ドリフト領域よりもドーピング濃度の高い第1導電型のエミッタ領域と、
前記延伸方向において、前記エミッタ領域と交互に前記メサ部の上面に露出して設けられ、前記2つのトレンチ部の両方と接して設けられた第2導電型のコンタクト領域と、
上面視において前記エミッタ領域と重なって設けられ、前記ゲートトレンチ部と離れて配置され、前記メサ部の上面よりも下方に配置され、前記延伸方向において前記エミッタ領域を挟む2つの前記コンタクト領域を接続する、前記ベース領域よりもドーピング濃度の高い第2導電型の接続領域と
を有し、
前記接続領域は、前記コンタクト領域の第2導電型のドーパントとは異なる第2導電型のドーパントを含む
半導体装置。 - 前記接続領域の前記ドーパントは、前記コンタクト領域の前記ドーパントよりも、前記半導体基板における拡散係数が高い
請求項6に記載の半導体装置。 - 半導体基板を備える半導体装置であって、
前記半導体基板は、
第1導電型のドリフト領域と、
前記ドリフト領域と前記半導体基板の上面との間に設けられた第2導電型のベース領域と、
前記半導体基板の上面において予め定められた延伸方向に延伸して設けられ、前記半導体基板の上面から前記ドリフト領域まで設けられた2つのトレンチ部と、
前記2つのトレンチ部の間に設けられたメサ部と
を有し、
前記2つのトレンチ部の少なくとも一方はゲートトレンチ部であり、
前記メサ部は、
前記メサ部の上面に露出して設けられ、前記2つのトレンチ部の両方と接して設けられた、前記ドリフト領域よりもドーピング濃度の高い第1導電型のエミッタ領域と、
前記延伸方向において、前記エミッタ領域と交互に前記メサ部の上面に露出して設けられ、前記2つのトレンチ部の両方と接して設けられた第2導電型のコンタクト領域と、
上面視において前記エミッタ領域と重なって設けられ、前記ゲートトレンチ部と離れて配置され、前記メサ部の上面よりも下方に配置され、前記延伸方向において前記エミッタ領域を挟む2つの前記コンタクト領域を接続する、前記ベース領域よりもドーピング濃度の高い第2導電型の接続領域と
を有し、
前記2つのトレンチ部の一方は前記ゲートトレンチ部、他方はダミートレンチ部であり、
前記接続領域は、前記2つのトレンチ部の間において、前記ダミートレンチ部よりに配置されている
半導体装置。 - 半導体基板を備える半導体装置であって、
前記半導体基板は、
第1導電型のドリフト領域と、
前記ドリフト領域と前記半導体基板の上面との間に設けられた第2導電型のベース領域と、
前記半導体基板の上面において予め定められた延伸方向に延伸して設けられ、前記半導体基板の上面から前記ドリフト領域まで設けられた2つのトレンチ部と、
前記2つのトレンチ部の間に設けられたメサ部と
を有し、
前記2つのトレンチ部の少なくとも一方はゲートトレンチ部であり、
前記メサ部は、
前記メサ部の上面に露出して設けられ、前記2つのトレンチ部の両方と接して設けられた、前記ドリフト領域よりもドーピング濃度の高い第1導電型のエミッタ領域と、
前記延伸方向において、前記エミッタ領域と交互に前記メサ部の上面に露出して設けられ、前記2つのトレンチ部の両方と接して設けられた第2導電型のコンタクト領域と、
上面視において前記エミッタ領域と重なって設けられ、前記ゲートトレンチ部と離れて配置され、前記メサ部の上面よりも下方に配置され、前記延伸方向において前記エミッタ領域を挟む2つの前記コンタクト領域を接続する、前記ベース領域よりもドーピング濃度の高い第2導電型の接続領域と
を有し、
前記接続領域は、前記ベース領域の第2導電型のドーパントとは異なる第2導電型のドーパントを含む
半導体装置。 - 前記接続領域の前記ドーパントは、前記ベース領域の前記ドーパントよりも、前記半導体基板における拡散係数が低い
請求項9に記載の半導体装置。 - 前記接続領域は、前記エミッタ領域の下端と接している
請求項2、3または5から10のいずれか一項に記載の半導体装置。 - 前記接続領域の少なくとも一部は、前記エミッタ領域の内部に配置されている
請求項2、3または5から10のいずれか一項に記載の半導体装置。 - 前記2つのトレンチ部は、両方とも前記ゲートトレンチ部であり、
前記接続領域は、前記2つのトレンチ部の間の中央に配置されている
請求項1から7または9から12のいずれか一項に記載の半導体装置。 - 前記コンタクト領域および前記接続領域のそれぞれは、前記半導体基板の深さ方向においてドーピング濃度の濃度ピークを有し、
前記コンタクト領域の前記濃度ピークは、前記接続領域の前記濃度ピークよりも前記半導体基板の上面側に配置されている
請求項1、2または4から13のいずれか一項に記載の半導体装置。 - 半導体装置の製造方法であって、
第1導電型のドリフト領域を有する半導体基板に、前記ドリフト領域と前記半導体基板の上面との間に設けられた第2導電型のベース領域と、前記半導体基板の上面において予め定められた延伸方向に延伸して設けられ、前記半導体基板の上面から前記ドリフト領域まで設けられた2つのトレンチ部と、前記2つのトレンチ部の間に設けられたメサ部と、前記メサ部の上面に露出し、前記2つのトレンチ部の両方と接し、前記ドリフト領域よりもドーピング濃度の高い第1導電型のエミッタ領域と、前記延伸方向において、前記エミッタ領域と交互に前記メサ部の上面に露出し、前記2つのトレンチ部の両方と接する第2導電型のコンタクト領域と、を形成する第1段階と、
上面視において前記エミッタ領域と重なり、前記メサ部の上面よりも下方に配置され、前記延伸方向において前記エミッタ領域を挟む2つの前記コンタクト領域を接続する、前記ベース領域よりもドーピング濃度の高い第2導電型の接続領域を形成する第2段階と
を備え、
前記2つのトレンチ部の少なくとも一方はゲートトレンチ部であり、
前記第2段階において、前記ゲートトレンチ部と離れた前記接続領域を形成し、
前記接続領域は、前記コンタクト領域の第2導電型のドーパントとは異なる第2導電型のドーパントを含む
製造方法。 - 前記第2段階において、前記コンタクト領域が形成された領域をマスクして、前記半導体基板に第2導電型のドーパントを注入することで、前記接続領域を形成する
請求項15に記載の製造方法。 - 前記第2段階において、前記接続領域を形成すべき領域と、前記コンタクト領域が形成された領域の少なくとも一部の領域とに第2導電型のドーパントを注入することで、前記接続領域を形成する
請求項15に記載の製造方法。
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