JP6604430B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6604430B2 JP6604430B2 JP2018504624A JP2018504624A JP6604430B2 JP 6604430 B2 JP6604430 B2 JP 6604430B2 JP 2018504624 A JP2018504624 A JP 2018504624A JP 2018504624 A JP2018504624 A JP 2018504624A JP 6604430 B2 JP6604430 B2 JP 6604430B2
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- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
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- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
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- 230000001737 promoting effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
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- 239000002344 surface layer Substances 0.000 description 1
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Description
特開2015−135954号公報
Claims (41)
- 第1導電型のドリフト領域および前記ドリフト領域の上方に設けられた第2導電型のベース領域を有する半導体基板と、
前記半導体基板に形成されたトランジスタ部と、
前記トランジスタ部と隣接して前記半導体基板に形成されたダイオード部と
を備え、
前記トランジスタ部および前記ダイオード部には、
それぞれ予め定められた配列方向に沿って配列された複数のトレンチ部と、
それぞれのトレンチ部の間に形成された複数のメサ部と
が形成され、
前記複数のメサ部のうち、前記トランジスタ部および前記ダイオード部との境界における少なくとも1つの境界メサ部は、前記半導体基板の上面において前記ベース領域よりも高濃度の第2導電型のコンタクト領域を有し、
前記境界メサ部における前記コンタクト領域の面積は、他のメサ部における前記コンタクト領域の面積よりも大きく、
前記複数のトレンチ部のうち、前記境界メサ部に隣接するトレンチ部よりも前記トランジスタ部側に隣接して設けられた少なくとも一つのトレンチ部が、ダミートレンチ部である半導体装置。 - 前記境界メサ部のうち少なくとも一つは、前記トランジスタ部に設けられる
請求項1に記載の半導体装置。 - 前記トランジスタ部に形成された前記メサ部の少なくとも一つには、前記ベース領域および前記ドリフト領域の間に前記ドリフト領域よりも高濃度の第1導電型の蓄積領域が設けられる、
請求項1または2に記載の半導体装置。 - 前記境界メサ部のうち少なくとも一つには、前記蓄積領域が設けられない
請求項3に記載の半導体装置。 - 前記複数のトレンチ部のうち、前記境界メサ部に隣接するトレンチ部は、ダミートレンチ部である
請求項3または4に記載の半導体装置。 - 前記蓄積領域は、
予め定められた深さ位置に形成された第1蓄積領域と、
前記第1蓄積領域よりも前記ダイオード部に近く、且つ、前記第1蓄積領域よりも浅い位置に形成された第2蓄積領域と
を有し、
前記第2蓄積領域に隣接するトレンチ部も、ダミートレンチ部である
請求項5に記載の半導体装置。 - 前記ダイオード部は、前記半導体基板の上面側にライフタイムキラーを有し、
前記トランジスタ部は、前記第1蓄積領域が形成された領域において、前記半導体基板の上面側に前記ライフタイムキラーを有さない
請求項6に記載の半導体装置。 - 前記境界メサ部は、前記半導体基板の上面側にライフタイムキラーを有する
請求項7に記載の半導体装置。 - 前記境界メサ部よりも前記トランジスタ部側の前記メサ部は、前記半導体基板の上面において、前記ドリフト領域よりも高濃度の第1導電型のエミッタ領域と、前記コンタクト領域とを有し、
前記境界メサ部は、前記エミッタ領域を有さない
請求項6から8のいずれか一項に記載の半導体装置。 - 前記境界メサ部よりも前記ダイオード部側の前記メサ部のうち少なくとも一部は、前記半導体基板の上面において前記ベース領域を有する
請求項6から9のいずれか一項に記載の半導体装置。 - 前記トランジスタ部と前記ダイオード部との境界から、前記エミッタ領域を有する前記メサ部と、前記境界メサ部との間の前記トレンチ部までの距離をDaとし、
前記半導体基板の下面から、前記ベース領域の下面までの距離をDtとした場合に、
100μm<Da+Dt<150μm
である、請求項9に記載の半導体装置。 - それぞれのトレンチ部は、前記半導体基板の上面において、前記配列方向とは異なる延伸方向に延伸して形成されており、
前記境界メサ部よりも前記トランジスタ部側の前記メサ部は、前記半導体基板の上面において、前記延伸方向に沿って前記エミッタ領域および前記コンタクト領域を交互に有し、
前記延伸方向において、最も外側に形成された前記エミッタ領域の端部よりも外側まで前記蓄積領域が形成されている
請求項9に記載の半導体装置。 - 前記半導体基板の上面に形成された層間絶縁膜を更に備え、
前記層間絶縁膜には、前記エミッタ領域および前記コンタクト領域を露出させるコンタクトホールが形成され、
前記延伸方向において、前記コンタクトホールは前記蓄積領域の端部よりも外側まで形成されている
請求項12に記載の半導体装置。 - 前記エミッタ領域の下方の少なくとも一部の領域において、前記蓄積領域が形成されていないキャリア通過領域を有する
請求項12に記載の半導体装置。 - 前記エミッタ領域の下方の領域全体に、前記キャリア通過領域が設けられている
請求項14に記載の半導体装置。 - 前記キャリア通過領域は、前記コンタクト領域のうち、前記エミッタ領域に隣接する端部の下方にも設けられている
請求項15に記載の半導体装置。 - 前記第1蓄積領域および前記第2蓄積領域のいずれも、前記コンタクト領域の下方に形成されている
請求項14から16のいずれか一項に記載の半導体装置。 - 前記半導体基板の上面に形成された層間絶縁膜を更に備え、
前記層間絶縁膜には、前記エミッタ領域および前記コンタクト領域を露出させるコンタクトホールが形成され、
前記延伸方向において、前記蓄積領域は、前記コンタクトホールの端部よりも外側まで形成されている
請求項14から17のいずれか一項に記載の半導体装置。 - 第1導電型のドリフト領域および前記ドリフト領域の上方に設けられた第2導電型のベース領域を有する半導体基板と、
前記半導体基板の上面において、予め定められた延伸方向において延伸して形成され、前記ベース領域を貫通するトレンチ部と、
前記半導体基板の上面において前記トレンチ部と隣接する領域に、前記延伸方向に沿って交互に形成された、前記ドリフト領域よりも高濃度の前記第1導電型のエミッタ領域および前記ベース領域よりも高濃度の前記第2導電型のコンタクト領域と、
前記ベース領域および前記ドリフト領域の間に形成され、前記ドリフト領域よりも高濃度の前記第1導電型の蓄積領域と
を備え、
前記延伸方向において、最も外側に形成された前記エミッタ領域の端部よりも外側まで前記蓄積領域が形成されている半導体装置。 - 前記半導体基板の上面に形成された層間絶縁膜を更に備え、
前記層間絶縁膜には、前記エミッタ領域および前記コンタクト領域を露出させるコンタクトホールが形成され、
前記延伸方向において、前記コンタクトホールは前記蓄積領域の端部よりも外側まで形成されている
請求項19に記載の半導体装置。 - 前記延伸方向における前記蓄積領域の端部は、外側ほど浅い位置に形成されている
請求項19または20に記載の半導体装置。 - 前記半導体基板の上面において、前記コンタクト領域よりも外側に形成された、前記ベース領域よりも高濃度の前記第2導電型のウェル領域を更に備え、
前記半導体基板の上面において、前記コンタクト領域および前記ウェル領域の間に前記ベース領域が形成されている
請求項19から21のいずれか一項に記載の半導体装置。 - 前記延伸方向において、前記エミッタ領域の端部から前記蓄積領域の端部までの距離が、前記蓄積領域の端部から前記コンタクトホールの端部までの距離よりも短い
請求項20に記載の半導体装置。 - 第1導電型のドリフト領域および前記ドリフト領域の上方に設けられた第2導電型のベース領域を有する半導体基板と、
前記半導体基板の上面において、予め定められた延伸方向において延伸して形成され、前記ベース領域を貫通するトレンチ部と、
前記半導体基板の上面において前記トレンチ部と隣接する領域に、前記延伸方向に沿って交互に形成された、前記ドリフト領域よりも高濃度の前記第1導電型のエミッタ領域および前記ベース領域よりも高濃度の前記第2導電型のコンタクト領域と、
前記ベース領域および前記ドリフト領域の間に形成され、前記ドリフト領域よりも高濃度の前記第1導電型の蓄積領域と、
前記半導体基板の上面に形成された層間絶縁膜と
を備え、
前記層間絶縁膜には、前記エミッタ領域および前記コンタクト領域を露出させるコンタクトホールが形成され、
前記延伸方向において、前記コンタクトホールは前記蓄積領域の端部よりも外側まで形成されている半導体装置。 - 前記トランジスタ部および前記ダイオード部は、
前記配列方向とは異なる延伸方向の最も外側に設けられた前記コンタクト領域の下方に、少なくとも設けられた第2導電型のコレクタ領域
をさらに備え
前記トランジスタ部は、
前記ベース領域および前記ドリフト領域の間に設けられ、前記ドリフト領域よりも高濃度の前記第1導電型の蓄積領域
をさらに備え、
前記ダイオード部の前記コレクタ領域の内側の端部は、前記トランジスタ部の前記蓄積領域の外側の端部よりも内側に位置する
請求項1または2に記載の半導体装置。 - 前記トランジスタ部は、前記ドリフト領域よりも高濃度の第1導電型のエミッタ領域をさらに備え、
前記ダイオード部の前記コレクタ領域の内側の端部は、前記トランジスタ部において前記延伸方向の最も外側に設けられた前記エミッタ領域の外側の端部よりも内側に位置する
請求項25に記載の半導体装置。 - 前記半導体装置は、
前記半導体基板に形成されたトランジスタ部と、
前記トランジスタ部と隣接して前記半導体基板に形成されたダイオード部と
をさらに備え、
前記トランジスタ部および前記ダイオード部は、
前記延伸方向の最も外側に設けられた前記コンタクト領域の下方に、少なくとも設けられた第2導電型のコレクタ領域
をさらに有し、
前記ダイオード部の前記コレクタ領域の内側の端部は、前記トランジスタ部の前記蓄積領域の外側の端部よりも内側に位置する
請求項19から24のいずれか一項に記載の半導体装置。 - 前記ダイオード部の前記コレクタ領域の内側の端部は、前記トランジスタ部において前記延伸方向の最も外側に設けられた前記エミッタ領域の外側の端部よりも内側に位置する
請求項27に記載の半導体装置。 - 前記境界メサ部よりも前記トランジスタ部側の前記メサ部は、前記半導体基板の上面において、前記ドリフト領域よりも高濃度の第1導電型のエミッタ領域を有し、
前記複数のトレンチ部のうち、前記境界メサ部と前記トランジスタ部のメサ部との間のトレンチ部は、ダミートレンチ部であり、
当該ダミートレンチ部は、前記エミッタ領域と接する
請求項1から8のいずれか一項に記載の半導体装置。 - 前記ダイオード部のメサ部には、前記ドリフト領域よりも高濃度の第1導電型の蓄積領域が設けられない
請求項1又は2に記載の半導体装置。 - 前記半導体基板の上面に形成された層間絶縁膜をさらに備え、
前記層間絶縁膜には、前記エミッタ領域および前記コンタクト領域を露出させるコンタクトホールが形成され、
前記延伸方向において、前記コンタクト領域は、前記コンタクトホールよりも外側まで形成される
請求項19に記載の半導体装置。 - 前記延伸方向において、前記コンタクト領域は、前記コンタクトホールよりも外側まで形成される
請求項24に記載の半導体装置。 - 前記延伸方向において、 前記エミッタ領域の端部位置から、前記蓄積領域の端部位置までの距離は、前記蓄積領域の端部位置から、前記コンタクトホールの端部位置までの距離より短い
請求項31又は32に記載の半導体装置。 - 前記延伸方向において、前記蓄積領域の先端は、前記エミッタ領域の下方の前記蓄積領域より浅い
請求項19又は24に記載の半導体装置。 - 前記境界メサ部の少なくとも1つにおいて、前記半導体基板の上面に露出する前記ベース領域の面積が、前記コンタクト領域の露出する面積よりも大きい
請求項1に記載の半導体装置。 - 前記半導体基板の上面に露出する前記ベース領域の面積が、前記コンタクト領域の露出する面積よりも大きい前記境界メサ部は、前記ダイオード部に隣接する
請求項35に記載の半導体装置。 - 前記半導体基板の上面に露出する前記ベース領域の面積が、前記コンタクト領域の露出する面積よりも大きい前記境界メサ部は、ダミートレンチ部に挟まれる
請求項35又は36に記載の半導体装置。 - 前記トランジスタ部と前記ダイオード部との境界から、前記エミッタ領域を有する前記メサ部と、前記境界メサ部との間の前記トレンチ部までの距離をDaとし、
前記配列方向とは異なる延伸方向における、前記エミッタ領域の端部位置から前記蓄積領域の端部位置までの距離をDfとした場合に、
Da>Df
である
請求項9に記載の半導体装置。 - 前記ダイオード部は、前記半導体基板の上面側にライフタイムキラーを有し、
前記トランジスタ部と前記ダイオード部との境界から、前記エミッタ領域を有する前記メサ部と、前記境界メサ部との間の前記トレンチ部までの距離をDaとし、
前記半導体基板の下面から、前記ベース領域の下面までの距離をDtとし、
前記境界メサ部の前記ベース領域の底面から、前記ライフタイムキラーの欠陥濃度のピーク位置までの距離Dhとした場合に、
Dh<Da<Dt
である
請求項9に記載の半導体装置。 - 前記トランジスタ部と前記ダイオード部との境界から、前記エミッタ領域を有する前記メサ部と、前記境界メサ部との間の前記トレンチ部までの距離をDaとし、
前記距離Daは、前記半導体基板の熱拡散長Ltより大きい
請求項9に記載の半導体装置。 - 前記複数のトレンチ部のうち、前記エミッタ領域に接するトレンチ部の一部がゲートトレンチ部である
請求項9、または11から18のいずれか一項に記載の半導体装置。
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