JP6597102B2 - 半導体装置 - Google Patents
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- JP6597102B2 JP6597102B2 JP2015182760A JP2015182760A JP6597102B2 JP 6597102 B2 JP6597102 B2 JP 6597102B2 JP 2015182760 A JP2015182760 A JP 2015182760A JP 2015182760 A JP2015182760 A JP 2015182760A JP 6597102 B2 JP6597102 B2 JP 6597102B2
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- 239000004065 semiconductor Substances 0.000 title claims description 89
- 239000000758 substrate Substances 0.000 claims description 42
- 239000012535 impurity Substances 0.000 claims description 31
- 238000011084 recovery Methods 0.000 claims description 28
- 230000015556 catabolic process Effects 0.000 description 12
- 230000005684 electric field Effects 0.000 description 12
- 239000000969 carrier Substances 0.000 description 11
- 239000012141 concentrate Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
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Description
特許文献1 特開平9−232597号公報
Claims (8)
- 第1伝導型の半導体基板と、
前記半導体基板の表面に形成された、第2伝導型の第1領域と、
前記半導体基板の表面において前記第1領域と隣接して形成され、前記第1領域よりも高濃度の第2伝導型の第2領域と、
前記半導体基板の表面において前記第2領域と隣接して形成され、前記第2領域よりも高濃度の第2伝導型の第3領域と、
前記第2領域の一部および前記第3領域を覆う絶縁膜と、
前記絶縁膜により覆われていない前記第1領域および前記第2領域と接続された電極と
を備え、
前記第1領域、前記第2領域および前記第3領域が配列されている配列方向において、前記第3領域は前記第2領域よりも長い
半導体装置。 - 前記配列方向における前記第3領域の長さは100μm以上である
請求項1に記載の半導体装置。 - 前記配列方向において、前記電極に接触する前記第2領域の長さと、前記絶縁膜に接触する前記第2領域の長さは等しい
請求項1または2に記載の半導体装置。 - 前記配列方向において、前記電極に接触する前記第2領域より、前記絶縁膜に接触する前記第2領域のほうが長い
請求項1または2に記載の半導体装置。 - 前記第2領域はp型であり、前記第2領域における不純物濃度は、逆回復時において前記第2領域に注入されるホール濃度より高い
請求項1から4のいずれか一項に記載の半導体装置。 - 前記第2領域は、前記半導体基板の表面からみて、前記第1領域よりも深い位置まで形成される
請求項1から5のいずれか一項に記載の半導体装置。 - 前記第3領域は、前記半導体基板の表面からみて、前記第2領域よりも深い位置まで形成される
請求項1から6のいずれか一項に記載の半導体装置。 - 前記第1領域の不純物濃度は、3.5×1016cm−3以上、4.5×1016cm−3以下であり、
前記第2領域の不純物濃度は、1.0×1017cm−3以上、2.0×1017cm−3以下であり、
前記第3領域の不純物濃度は、3.5×1018cm−3以上、4.5×1018cm−3以下である
請求項1に記載の半導体装置。
Priority Applications (3)
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JP2015182760A JP6597102B2 (ja) | 2015-09-16 | 2015-09-16 | 半導体装置 |
CN201610773105.XA CN106549035B (zh) | 2015-09-16 | 2016-08-30 | 半导体装置 |
US15/257,853 US9793343B2 (en) | 2015-09-16 | 2016-09-06 | Semiconductor device |
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JP2015182760A JP6597102B2 (ja) | 2015-09-16 | 2015-09-16 | 半導体装置 |
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JP2017059662A JP2017059662A (ja) | 2017-03-23 |
JP6597102B2 true JP6597102B2 (ja) | 2019-10-30 |
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JP (1) | JP6597102B2 (ja) |
CN (1) | CN106549035B (ja) |
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JP6319453B2 (ja) * | 2014-10-03 | 2018-05-09 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
WO2017141998A1 (ja) * | 2016-02-15 | 2017-08-24 | 富士電機株式会社 | 半導体装置 |
WO2017155122A1 (ja) * | 2016-03-10 | 2017-09-14 | 富士電機株式会社 | 半導体装置 |
JP6801324B2 (ja) * | 2016-09-15 | 2020-12-16 | 富士電機株式会社 | 半導体装置 |
CN110603645B (zh) * | 2017-05-08 | 2023-09-19 | 罗姆股份有限公司 | 半导体装置 |
CN110770914B (zh) | 2017-12-14 | 2024-03-01 | 富士电机株式会社 | 半导体装置及其制造方法 |
JP2019145708A (ja) * | 2018-02-22 | 2019-08-29 | 株式会社東芝 | 半導体装置 |
JP7124339B2 (ja) * | 2018-02-28 | 2022-08-24 | 富士電機株式会社 | 半導体装置 |
JP7091714B2 (ja) * | 2018-03-01 | 2022-06-28 | 株式会社デンソー | 半導体装置 |
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JP3444081B2 (ja) | 1996-02-28 | 2003-09-08 | 株式会社日立製作所 | ダイオード及び電力変換装置 |
JP5092610B2 (ja) * | 2007-08-01 | 2012-12-05 | トヨタ自動車株式会社 | 半導体装置 |
US7960783B2 (en) * | 2008-08-25 | 2011-06-14 | Maxpower Semiconductor Inc. | Devices containing permanent charge |
JP2011044508A (ja) * | 2009-08-19 | 2011-03-03 | Toshiba Corp | 電力用半導体装置 |
JP5716619B2 (ja) * | 2011-09-21 | 2015-05-13 | トヨタ自動車株式会社 | 半導体装置 |
JP2013135078A (ja) * | 2011-12-26 | 2013-07-08 | Toyota Motor Corp | ダイオード |
JP6029411B2 (ja) * | 2012-10-02 | 2016-11-24 | 三菱電機株式会社 | 半導体装置 |
DE112014001529T5 (de) | 2013-03-21 | 2015-12-24 | Fuji Electric Co., Ltd. | Halbleitervorrichtung |
JP2014241367A (ja) | 2013-06-12 | 2014-12-25 | 三菱電機株式会社 | 半導体素子、半導体素子の製造方法 |
JP2016174030A (ja) * | 2015-03-16 | 2016-09-29 | 株式会社東芝 | 半導体装置 |
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2016
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CN106549035B (zh) | 2021-04-27 |
JP2017059662A (ja) | 2017-03-23 |
US9793343B2 (en) | 2017-10-17 |
US20170077217A1 (en) | 2017-03-16 |
CN106549035A (zh) | 2017-03-29 |
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