JP7095303B2 - 半導体装置 - Google Patents
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- JP7095303B2 JP7095303B2 JP2018024227A JP2018024227A JP7095303B2 JP 7095303 B2 JP7095303 B2 JP 7095303B2 JP 2018024227 A JP2018024227 A JP 2018024227A JP 2018024227 A JP2018024227 A JP 2018024227A JP 7095303 B2 JP7095303 B2 JP 7095303B2
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Description
[先行技術文献]
[特許文献]
[特許文献1] 国際公開第2016/098199号公報
Claims (13)
- 1つの半導体基板に複数のトランジスタ領域と複数のダイオード領域とを有する半導体装置であって、
前記半導体基板の上面視において四辺を有する矩形環状であるゲートランナー領域の内側に位置する活性領域の一の端辺から前記一の端辺に対向する他の端辺まで各々延伸する、前記複数のトランジスタ領域および前記複数のダイオード領域と、
前記半導体基板の上面側において、前記矩形環状の前記ゲートランナー領域に接し且つ前記ゲートランナー領域の内側に設けられた第1導電型のパッド用ウェル領域と、
前記半導体基板の下面側に各々設けられ、少なくとも前記複数のトランジスタ領域の各々に設けられる第1導電型のコレクタ領域、および、前記複数のダイオード領域の各々に設けられる第2導電型のカソード領域と
を備え、
前記複数のトランジスタ領域および前記複数のダイオード領域の延伸方向と直交する前記複数のトランジスタ領域および前記複数のダイオード領域の配列方向における前記パッド用ウェル領域の端部は、前記延伸方向に延伸し、
前記パッド用ウェル領域の前記端部の下方には、前記コレクタ領域が位置し、
前記半導体装置は、前記パッド用ウェル領域に接する1つのトランジスタ領域に対して、前記配列方向において前記パッド用ウェル領域とは反対側に設けられ、前記パッド用ウェル領域に接しない1つのダイオード領域を含み、
前記パッド用ウェル領域に接しない前記1つのダイオード領域の前記カソード領域であって、前記配列方向において前記パッド用ウェル領域の前記端部と対向し且つ前記延伸方向に延伸する前記カソード領域の端部の一部は、前記パッド用ウェル領域に接する前記1つのトランジスタ領域と前記パッド用ウェル領域に接しない前記1つのダイオード領域との境界に対して前記パッド用ウェル領域の前記端部とは反対側に位置し、且つ、前記配列方向において前記パッド用ウェル領域から前記パッド用ウェル領域に接しない前記1つのダイオード領域に向かう方向に後退している後退端部を有する
半導体装置。 - 前記パッド用ウェル領域は、前記延伸方向に延伸する複数の端部を有し、
前記パッド用ウェル領域の前記複数の端部の各々は、前記複数のトランジスタ領域のうち1つのトランジスタ領域に接し、
前記パッド用ウェル領域の前記複数の端部の下方には、それぞれ前記コレクタ領域が位置する
請求項1に記載の半導体装置。 - 前記パッド用ウェル領域は、二つのトランジスタ領域と前記二つのトランジスタ領域の間に位置する一つのダイオード領域とに接し、
前記パッド用ウェル領域の前記複数の端部のうち第1の端部は、前記二つのトランジスタ領域のうち第1のトランジスタ領域に接し、
前記パッド用ウェル領域の前記複数の端部のうち第2の端部は、前記二つのトランジスタ領域のうち前記第1のトランジスタ領域とは異なる位置に設けられた、第2のトランジスタ領域に接する
請求項2に記載の半導体装置。 - 前記カソード領域の前記端部における前記後退端部は、前記パッド用ウェル領域の前記端部から前記半導体基板の厚さ以上離間している
請求項1から3のいずれか一項に記載の半導体装置。 - 前記カソード領域の前記端部における前記後退端部は、前記境界から90μm以上離間している
請求項1から4のいずれか一項に記載の半導体装置。 - 前記半導体基板は、前記コレクタ領域および前記カソード領域と前記半導体基板の前記上面との間において、前記カソード領域の前記後退端部の上方に設けられたライフタイムキラー領域を含む
請求項1から5のいずれか一項に記載の半導体装置。 - 前記パッド用ウェル領域は、前記活性領域の前記一の端辺に接し、かつ、前記一の端辺の前記配列方向における中央近傍に設けられる
請求項1から6のいずれか一項に記載の半導体装置。 - 前記矩形環状の前記ゲートランナー領域は、前記半導体基板の上面側に設けられた第1導電型のゲートランナー用ウェル領域を含み、
前記半導体基板は、前記半導体基板の上面視において、前記活性領域から前記延伸方向において前記ゲートランナー用ウェル領域の予め定められた位置までライフタイムキラー領域を含む
請求項1から7のいずれか一項に記載の半導体装置。 - 1つの半導体基板に複数のトランジスタ領域と複数のダイオード領域とを有する半導体装置であって、
前記半導体基板の上面視において四辺を有する矩形環状であるゲートランナー領域の内側に位置する活性領域の一の端辺から前記一の端辺に対向する他の端辺まで各々延伸する、前記複数のトランジスタ領域および前記複数のダイオード領域と、
前記半導体基板の上面側において、前記矩形環状の前記ゲートランナー領域に接し且つ前記ゲートランナー領域の内側に設けられた第1導電型のパッド用ウェル領域と、
前記半導体基板の下面側に各々設けられ、少なくとも前記複数のトランジスタ領域の各々に設けられる第1導電型のコレクタ領域、および、前記複数のダイオード領域の各々に設けられる第2導電型のカソード領域と
を備え、
前記複数のトランジスタ領域および前記複数のダイオード領域の延伸方向と直交する前記複数のトランジスタ領域および前記複数のダイオード領域の配列方向における前記パッド用ウェル領域の端部は、前記延伸方向に延伸し、
前記パッド用ウェル領域の前記端部の下方には、前記コレクタ領域が位置し、
前記矩形環状の前記ゲートランナー領域は、前記半導体基板の上面側に設けられた第1導電型のゲートランナー用ウェル領域を含み、
前記ゲートランナー用ウェル領域は、前記延伸方向において前記少なくとも1つのダイオード領域に接し、
前記延伸方向において互いに対向する前記ゲートランナー用ウェル領域の前記活性領域に接する端部と前記少なくとも1つのダイオード領域のカソード領域の端部とを前記半導体基板の上面に仮想的に投影した場合に、前記ゲートランナー用ウェル領域の前記端部と前記カソード領域の前記端部との最短距離である第1距離は、前記半導体基板の前記上面から前記ゲートランナー用ウェル領域の底部までの深さより大きく、且つ、前記半導体基板の前記上面から前記下面までの厚さよりも小さい
半導体装置。 - 前記複数のダイオード領域のうち少なくとも1つのダイオード領域は、
前記活性領域における前記半導体基板の上面上において、前記延伸方向に各々延伸し且つ前記配列方向において互いに離間して設けられた、複数のコンタクト部
を有する
請求項9に記載の半導体装置。 - 前記延伸方向において互いに対向する前記ゲートランナー用ウェル領域の端部と前記複数のコンタクト部の少なくとも1つのコンタクト部の端部とを前記半導体基板の上面に仮想的に投影した場合に、前記第1距離は、前記ゲートランナー用ウェル領域の端部と前記少なくとも1つのコンタクト部の前記端部との最短距離である第2距離よりも大きい
請求項10に記載の半導体装置。 - 1つの半導体基板に複数のトランジスタ領域と複数のダイオード領域とを有する半導体装置であって、
前記半導体基板の上面視において四辺を有する矩形環状であるゲートランナー領域の内側に位置する活性領域の一の端辺から前記一の端辺に対向する他の端辺まで各々延伸する、前記複数のトランジスタ領域および前記複数のダイオード領域と、
前記半導体基板の上面側において、前記矩形環状の前記ゲートランナー領域に接し且つ前記ゲートランナー領域の内側に設けられた第1導電型のパッド用ウェル領域と、
前記半導体基板の下面側に各々設けられ、少なくとも前記複数のトランジスタ領域の各々に設けられる第1導電型のコレクタ領域、および、前記複数のダイオード領域の各々に設けられる第2導電型のカソード領域と
を備え、
前記複数のトランジスタ領域および前記複数のダイオード領域の延伸方向と直交する前記複数のトランジスタ領域および前記複数のダイオード領域の配列方向における前記パッド用ウェル領域の端部は、前記延伸方向に延伸し、
前記パッド用ウェル領域の前記端部の下方には、前記コレクタ領域が位置し、
前記半導体基板の上面視において、前記パッド用ウェル領域の前記配列方向における前記活性領域の両端には、各々トランジスタ領域が位置し、
前記パッド用ウェル領域は、前記活性領域の角部に接する
半導体装置。 - 前記複数のダイオード領域は、前記延伸方向において前記パッド用ウェル領域から前記他の端辺に向かって延伸する他のダイオード領域を含み、
前記半導体基板の上面視において、前記延伸方向において前記パッド用ウェル領域に対向する前記他のダイオード領域における前記カソード領域の端部は、前記パッド用ウェル領域から離間している
請求項1から12のいずれか一項に記載の半導体装置。
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