JP6969662B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6969662B2 JP6969662B2 JP2020500368A JP2020500368A JP6969662B2 JP 6969662 B2 JP6969662 B2 JP 6969662B2 JP 2020500368 A JP2020500368 A JP 2020500368A JP 2020500368 A JP2020500368 A JP 2020500368A JP 6969662 B2 JP6969662 B2 JP 6969662B2
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
-
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Description
[先行技術文献]
[特許文献]
[特許文献1] 国際公開2017/155122号公報
[特許文献2] 国際公開2016/098199号公報
[特許文献3] 特開2017−135255号公報
[特許文献4] 特開2017−103400号公報
[特許文献5] 特開2016−197678号公報
[特許文献6] 特開2011−243694号公報
[特許文献7] 国際公開2017/141998号公報
[特許文献8] 特開2017−28244号公報
Claims (12)
- 1つの半導体基板にトランジスタ領域とダイオード領域とを有する半導体装置であって、
前記半導体装置は、
前記ダイオード領域において、前記半導体基板中に設けられた第1導電型のアノード領域と、
少なくとも前記ダイオード領域に設けられ、前記半導体基板中において前記アノード領域よりも下方に位置する第2導電型のドリフト領域と、
少なくとも前記ダイオード領域に設けられ、前記半導体基板の深さ方向において前記アノード領域と前記ドリフト領域との間に位置する、第2導電型の蓄積領域と、
第1方向に延伸する複数のコンタクト部を有し、前記半導体基板の上面上に設けられた、絶縁膜と
を有し、
前記複数のコンタクト部は、前記ダイオード領域に設けられた第1のコンタクト部を含み、
前記第1のコンタクト部は、前記第1方向における前記第1のコンタクト部の端部に、前記蓄積領域と前記深さ方向において重ならない第1の非重複領域を有し、
前記半導体装置は、
前記トランジスタ領域において、前記半導体基板中に設けられた第1導電型のベース領域と、
前記トランジスタ領域に設けられ、前記半導体基板中において前記ベース領域よりも下方に位置する前記ドリフト領域と
をさらに備え、
前記蓄積領域は、前記トランジスタ領域にも設けられ、前記半導体基板の深さ方向において前記ベース領域と前記ドリフト領域との間に位置し、
前記複数のコンタクト部は、前記トランジスタ領域に設けられた第2のコンタクト部を含み、
前記第2のコンタクト部は、前記第1方向における前記第2のコンタクト部の端部に、前記蓄積領域と前記深さ方向において重ならない第2の非重複領域を有し、
前記トランジスタ領域は、
前記第1方向に延伸し、前記第1方向に直交する第2方向において配列された複数のトレンチ部と、
前記複数のトレンチ部のうち前記第2方向において隣接する各2つのトレンチ部の間に位置し、前記半導体基板の一部である、複数の第2メサ領域と
を有し、
前記複数の第2メサ領域のうち少なくとも1つの第2メサ領域は、第2導電型のエミッタ領域を有し、
前記第2のコンタクト部の端部と前記蓄積領域の端部とを前記半導体基板の上面に投影した場合の最短距離は、前記第1方向における前記エミッタ領域の長さより大きい
半導体装置。 - 1つの半導体基板にトランジスタ領域とダイオード領域とを有する半導体装置であって、
前記半導体装置は、
前記ダイオード領域において、前記半導体基板中に設けられた第1導電型のアノード領域と、
少なくとも前記ダイオード領域に設けられ、前記半導体基板中において前記アノード領域よりも下方に位置する第2導電型のドリフト領域と、
少なくとも前記ダイオード領域に設けられ、前記半導体基板の深さ方向において前記アノード領域と前記ドリフト領域との間に位置する、第2導電型の蓄積領域と、
第1方向に延伸する複数のコンタクト部を有し、前記半導体基板の上面上に設けられた、絶縁膜と
を有し、
前記複数のコンタクト部は、前記ダイオード領域に設けられた第1のコンタクト部を含み、
前記第1のコンタクト部は、前記第1方向における前記第1のコンタクト部の端部に、前記蓄積領域と前記深さ方向において重ならない第1の非重複領域を有し、
前記半導体装置は、
前記トランジスタ領域において、前記半導体基板中に設けられた第1導電型のベース領域と、
前記トランジスタ領域に設けられ、前記半導体基板中において前記ベース領域よりも下方に位置する前記ドリフト領域と
をさらに備え、
前記蓄積領域は、前記トランジスタ領域にも設けられ、前記半導体基板の深さ方向において前記ベース領域と前記ドリフト領域との間に位置し、
前記複数のコンタクト部は、前記トランジスタ領域に設けられた第2のコンタクト部を含み、
複数の前記トランジスタ領域は、前記第1方向と直交する第2方向の両側を前記ダイオード領域に挟まれた内側トランジスタ領域を有し、
前記内側トランジスタ領域における前記蓄積領域の前記第1方向の端部は、前記第2のコンタクト部の前記第1方向の端部よりも、前記半導体基板の外周端部に近い
半導体装置。 - 1つの半導体基板にトランジスタ領域とダイオード領域とを有する半導体装置であって、
前記半導体装置は、
前記ダイオード領域において、前記半導体基板中に設けられた第1導電型のアノード領域と、
少なくとも前記ダイオード領域に設けられ、前記半導体基板中において前記アノード領域よりも下方に位置する第2導電型のドリフト領域と、
少なくとも前記ダイオード領域に設けられ、前記半導体基板の深さ方向において前記アノード領域と前記ドリフト領域との間に位置する、第2導電型の蓄積領域と、
第1方向に延伸する複数のコンタクト部を有し、前記半導体基板の上面上に設けられた、絶縁膜と、
複数の前記トランジスタ領域および複数の前記ダイオード領域を含む活性領域と
を有し、
前記複数のコンタクト部は、前記ダイオード領域に設けられた第1のコンタクト部を含み、
前記第1のコンタクト部は、前記第1方向における前記第1のコンタクト部の端部に、前記蓄積領域と前記深さ方向において重ならない第1の非重複領域を有し、
複数の前記トランジスタ領域の各々は、前記第1方向と直交する第2方向の端部に位置する外側トランジスタ領域であり、
複数のコンタクト部は、前記外側トランジスタ領域に設けられた複数の第2のコンタクト部を含み、
前記複数の第2のコンタクト部の各々は、前記第1方向における前記第2のコンタクト部の端部に、前記蓄積領域と前記深さ方向において重ならない第2の非重複領域を有し、
前記第2方向の前記端部における前記外側トランジスタ領域において、前記第1方向における前記第2の非重複領域の長さは、前記第2方向において前記半導体基板の外周端部に近いほど長い
半導体装置。 - 前記複数の第2のコンタクト部のうち、前記第2方向において前記半導体基板の外周端部に最も近い第2のコンタクト部の全体は、前記蓄積領域と重ならない
請求項3に記載の半導体装置。 - 1つの半導体基板にトランジスタ領域とダイオード領域とを有する半導体装置であって、
前記半導体装置は、
前記ダイオード領域において、前記半導体基板中に設けられた第1導電型のアノード領域と、
少なくとも前記ダイオード領域に設けられ、前記半導体基板中において前記アノード領域よりも下方に位置する第2導電型のドリフト領域と、
少なくとも前記ダイオード領域に設けられ、前記半導体基板の深さ方向において前記アノード領域と前記ドリフト領域との間に位置する、第2導電型の蓄積領域と、
第1方向に延伸する複数のコンタクト部を有し、前記半導体基板の上面上に設けられた、絶縁膜と
を有し、
前記複数のコンタクト部は、前記ダイオード領域に設けられた第1のコンタクト部を含み、
前記第1のコンタクト部は、前記第1方向における前記第1のコンタクト部の端部に、前記蓄積領域と前記深さ方向において重ならない第1の非重複領域を有し、
前記ダイオード領域は、
前記第1方向に延伸し、前記第1方向に直交する第2方向において配列された複数のダミートレンチ部と、
前記複数のダミートレンチ部のうち前記第2方向において隣接する各2つのダミートレンチ部の間に位置し、前記半導体基板の一部である、複数の第1メサ領域と
を有し、
前記複数の第1メサ領域のうち少なくとも1つの第1メサ領域は、前記第1のコンタクト部の前記第1方向の端部と前記少なくとも1つの第1メサ領域とが重なる位置において、前記アノード領域よりも高い第1導電型のドーパント濃度を有し且つ前記第1のコンタクト部に接続する第1導電型のコンタクト領域を有さず、
前記トランジスタ領域は、
前記第1方向に延伸し、前記第1方向に直交する第2方向において配列された複数のトレンチ部と、
前記複数のトレンチ部のうち前記第2方向において隣接する各2つのトレンチ部の間に位置し、前記半導体基板の一部である、複数の第2メサ領域と
を有し、
前記複数の第2メサ領域のうち少なくとも1つの第2メサ領域は、前記複数のコンタクト部のうち前記トランジスタ領域に設けられた第2のコンタクト部の前記第1方向の端部と前記少なくとも1つの第2メサ領域とが重なる位置において、前記コンタクト領域を有し、
前記複数の第2メサ領域は、前記第2方向において前記ダイオード領域に隣接する境界メサ領域を含み、
前記境界メサ領域は、前記コンタクト領域を有せず、且つ、前記コンタクト領域よりも第1導電型のドーピング濃度が低い第1導電型のベース領域を有する
半導体装置。 - 1つの半導体基板にトランジスタ領域とダイオード領域とを有する半導体装置であって、
前記半導体装置は、
前記ダイオード領域において、前記半導体基板中に設けられた第1導電型のアノード領域と、
少なくとも前記ダイオード領域に設けられ、前記半導体基板中において前記アノード領域よりも下方に位置する第2導電型のドリフト領域と、
少なくとも前記ダイオード領域に設けられ、前記半導体基板の深さ方向において前記アノード領域と前記ドリフト領域との間に位置する、第2導電型の蓄積領域と、
第1方向に延伸する複数のコンタクト部を有し、前記半導体基板の上面上に設けられた、絶縁膜と
を有し、
前記複数のコンタクト部は、前記ダイオード領域に設けられた第1のコンタクト部を含み、
前記第1のコンタクト部は、前記第1方向における前記第1のコンタクト部の端部に、前記蓄積領域と前記深さ方向において重ならない第1の非重複領域を有し、
前記ダイオード領域は、
前記第1方向に延伸し、前記第1方向に直交する第2方向において配列された複数のダミートレンチ部と、
前記複数のダミートレンチ部のうち前記第2方向において隣接する各2つのダミートレンチ部の間に位置し、前記半導体基板の一部である、複数の第1メサ領域と
を有し、
前記複数の第1メサ領域のうち少なくとも1つの第1メサ領域は、前記第1のコンタクト部の前記第1方向の端部と前記少なくとも1つの第1メサ領域とが重なる位置において、前記アノード領域よりも高い第1導電型のドーパント濃度を有し且つ前記第1のコンタクト部に接続する第1導電型のコンタクト領域を有さず、
前記複数の第1メサ領域のうち前記トランジスタ領域に隣接する第1メサ領域は、前記第1のコンタクト部の前記第1方向の端部と前記第1メサ領域とが重なる位置に前記コンタクト領域を有し、
前記複数の第1メサ領域のうち前記トランジスタ領域に隣接していない少なくとも1つの第1メサ領域は、前記第1のコンタクト部の前記第1方向の端部と、前記第1メサ領域とが重なる位置に前記コンタクト領域を有しない
半導体装置。 - 1つの半導体基板にトランジスタ領域とダイオード領域とを有する半導体装置であって、
前記半導体装置は、
前記ダイオード領域において、前記半導体基板中に設けられた第1導電型のアノード領域と、
少なくとも前記ダイオード領域に設けられ、前記半導体基板中において前記アノード領域よりも下方に位置する第2導電型のドリフト領域と、
少なくとも前記ダイオード領域に設けられ、前記半導体基板の深さ方向において前記アノード領域と前記ドリフト領域との間に位置する、第2導電型の蓄積領域と、
第1方向に延伸する複数のコンタクト部を有し、前記半導体基板の上面上に設けられた、絶縁膜と
を有し、
前記複数のコンタクト部は、前記ダイオード領域に設けられた第1のコンタクト部を含み、
前記第1のコンタクト部は、前記第1方向における前記第1のコンタクト部の端部に、前記蓄積領域と前記深さ方向において重ならない第1の非重複領域を有し、
前記トランジスタ領域は、前記半導体基板の下面側に設けられた第2導電型のコレクタ領域を有し、
前記ダイオード領域は、前記半導体基板の下面側に設けられた第1導電型のカソード領域を有し、
前記コレクタ領域と前記カソード領域との境界である下面側境界は、前記第1方向と直交する第2方向において、前記半導体基板の上面側における前記トランジスタ領域と前記ダイオード領域との境界である上面側境界よりも、前記ダイオード領域の側に位置する
半導体装置。 - 前記第1のコンタクト部の端部と前記蓄積領域の端部とを前記半導体基板の上面に投影した場合の最短距離は、前記蓄積領域の端部と前記カソード領域の端部とを前記半導体基板の上面に投影した場合の最短距離より大きい
請求項7に記載の半導体装置。 - 前記半導体装置は、
前記ダイオード領域において、前記半導体基板中に設けられた第1導電型のウェル領域をさらに有し、
前記ウェル領域の内側の端部と前記第1方向における前記第1のコンタクト部の端部とを前記半導体基板の上面に投影した場合の最短距離は、前記蓄積領域の端部と前記カソード領域の端部とを前記半導体基板の上面に投影した場合の最短距離より大きい
請求項7に記載の半導体装置。 - 前記半導体装置は、
前記トランジスタ領域において、前記ウェル領域をさらに有し、
前記複数のコンタクト部は、前記トランジスタ領域に設けられた第2のコンタクト部を含み、
前記ウェル領域の内側の端部と前記第1方向における前記第2のコンタクト部の端部とを前記半導体基板の上面に投影した場合の最短距離は、前記ウェル領域の内側の端部と前記第1方向における前記第1のコンタクト部の端部とを前記半導体基板の上面に投影した場合の最短距離より小さい
請求項9に記載の半導体装置。 - 前記半導体装置は、
互いに隣接する少なくとも2つの前記トランジスタ領域の間に設けられた延伸ゲートランナー部と、
複数の前記トランジスタ領域及び複数の前記ダイオード領域を囲む環状ゲートランナー部と
をさらに有し、
前記延伸ゲートランナー部の下方に設けられた前記ウェル領域の内側の端部と前記第1方向における前記第1のコンタクト部の一方の端部とを前記半導体基板の上面に投影した場合の最短距離は、前記環状ゲートランナー部の下方に設けられた前記ウェル領域の内側の端部と前記第1方向における前記第1のコンタクト部の他方の端部とを前記半導体基板の上面に投影した場合の最短距離より大きい
請求項9または10に記載の半導体装置。 - 前記第2方向における前記下面側境界から前記上面側境界までの長さである前記カソード領域の第1の後退長さは、前記第1方向における前記ウェル領域の内側の端部から外周端部に最も近い前記カソード領域の端部までの長さである前記カソード領域の第2の後退長さ以上である
請求項9から11のいずれか一項に記載の半導体装置。
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