JP6335829B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6335829B2 JP6335829B2 JP2015077490A JP2015077490A JP6335829B2 JP 6335829 B2 JP6335829 B2 JP 6335829B2 JP 2015077490 A JP2015077490 A JP 2015077490A JP 2015077490 A JP2015077490 A JP 2015077490A JP 6335829 B2 JP6335829 B2 JP 6335829B2
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- 239000004065 semiconductor Substances 0.000 title claims description 63
- 239000000758 substrate Substances 0.000 claims description 27
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 16
- 229920005591 polysilicon Polymers 0.000 claims description 16
- 239000010936 titanium Substances 0.000 claims description 9
- 238000002347 injection Methods 0.000 claims description 8
- 239000007924 injection Substances 0.000 claims description 8
- 238000010992 reflux Methods 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 229910017052 cobalt Inorganic materials 0.000 claims description 4
- 239000010941 cobalt Substances 0.000 claims description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 230000001737 promoting effect Effects 0.000 claims description 2
- 230000004048 modification Effects 0.000 description 20
- 238000012986 modification Methods 0.000 description 20
- 238000011084 recovery Methods 0.000 description 17
- 230000000694 effects Effects 0.000 description 15
- 230000015556 catabolic process Effects 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 4
- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000000087 stabilizing effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
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Description
本発明の実施形態を説明する前に、本発明の前提となる技術について説明する。図7は、前提技術における半導体装置(即ち、RC−IGBT101)の平面図である。図8は、図7中のダイオード102の領域とIGBT103の領域にまたがる線分A−Bにおける断面図である。図9は、図7中の領域Cを拡大した平面図である。
図1は、本発明の実施形態における半導体装置(即ち、RC−IGBT301)の平面図である。図2は、図1中のダイオード302の領域とIGBT303の領域にまたがる線分J−Kにおける断面図である。図3は、図1中の領域Lを拡大した平面図である。図2において、基板の上面を第1主面、下面を第2主面とする。
本発明の実施形態における半導体装置(RC-IGBT301)は、半導体基板の第1主面側にエミッタ層(n+エミッタ層315)、半導体基板の第2主面側にコレクタ層(p+コレクタ層328)を備える絶縁ゲート型バイポーラトランジスタ(IGBT303)と、半導体基板の第1主面側にアノード層310、半導体基板の第2主面側にカソード層(n+カソード層327)を備える還流ダイオード(ダイオード302)と、絶縁ゲート型バイポーラトランジスタと還流ダイオードとの境界に設けられ、絶縁ゲート型バイポーラトランジスタと還流ダイオードとを分離するウェル領域304と、エミッタ層、アノード層およびウェル領域304に接続するように半導体基板の第1主面に形成された第1電極(エミッタ電極325)と、ウェル領域304と第1電極との間に設けられる抵抗体351と、コレクタ層およびカソード層に接続するように半導体基板の第2主面に形成された第2電極(コレクタ電極329)と、を備える。
図4は、第1変形例における半導体装置(RC−IGBT301A)の断面図である。図4に示すように、第1変形例においては、IGBT303のp+コレクタ層328がダイオード302側に延長される。ウェル領域304におけるpウェル309は、平面視でIGBT303のp+コレクタ層328に含まれる。その他の構成はRC−IGBT301(図1から図3)と同じため説明を省略する。
本発明の実施形態の第1変形例における半導体装置(RC−IGBT301A)において、ウェル領域304は、平面視でコレクタ層(p+コレクタ層328)に含まれるように重なる。pウェル309は還流ダイオード(ダイオード302)として機能する。そのため、ダイオード302がオンの時にpウェル309から注入されたホールが、ダイオード302オフ時にリカバリ電流の発生の要因となる。第1変形例では、図4に示すように、pウェル309の直下にn+カソード層327の代わりにp+コレクタ層328が延在して設けられる。従って、ダイオード302オン時に、n+カソード層327からの電子の注入が抑制されるため、pウェル309直下のキャリア密度が低下する。よって、ダイオード302オフ時のリカバリ電流を抑制することが可能である。
図5は、第2変形例における半導体装置(RC−IGBT301B)の平面図である。第2の変形例においては、終端領域306の構造をウェル領域304と同様の構造とする。つまり、終端領域306においても、pウェル331とエミッタ電極325との間に抵抗体351を設ける。その他の構成はRC−IGBT301(図1から図3)と同じため説明を省略する。
本発明の実施形態の第2変形例における半導体装置(RC−IGBT301B)は、絶縁ゲート型バイポーラトランジスタ(IGBT303)および還流ダイオード(ダイオード302)を平面視で囲むように半導体基板に形成される終端領域306をさらに備え、第1電極(エミッタ電極325)は終端領域306にも接続しており、抵抗体351は、終端領域306と第1電極との間にも設けられる。
本発明の実施形態におけるRC−IGBT301においてpウェル309と抵抗体351とを接続する開口部320の形状を変形したのが、第3変形例におけるRC−IGBT301Cである。図6は、第3変形例における半導体装置(RC−IGBT301C)の平面図である。図6に示すように、第3変形例では、開口部320は互いに分離した複数の開口で構成される。その他の構成はRC−IGBT301(図1から図3)と同じため説明を省略する。
本発明の実施形態の第3変形例における半導体装置(RC−IGBT301C)において、ウェル領域304と第1電極(エミッタ電極325)とは、互いに分離した複数の開口(開口部320)を通して接続されており、複数の開口のそれぞれには抵抗体351が設けられる。
Claims (8)
- 半導体基板の第1主面側にエミッタ層、前記半導体基板の第2主面側にコレクタ層を備える絶縁ゲート型バイポーラトランジスタと、
前記半導体基板の前記第1主面側にアノード層、前記半導体基板の前記第2主面側にカソード層を備える還流ダイオードと、
前記絶縁ゲート型バイポーラトランジスタと前記還流ダイオードとの境界に設けられ、当該絶縁ゲート型バイポーラトランジスタと当該還流ダイオードとを分離するウェル領域と、
前記エミッタ層、前記アノード層および前記ウェル領域に接続するように前記半導体基板の前記第1主面に形成された第1電極と、
前記ウェル領域と前記第1電極との間に設けられる抵抗体と、
前記コレクタ層および前記カソード層に接続するように前記半導体基板の前記第2主面に形成された第2電極と、
を備える、
半導体装置。 - 前記ウェル領域は、平面視で前記コレクタ層に含まれるように重なる、
請求項1に記載の半導体装置。 - 当該絶縁ゲート型バイポーラトランジスタおよび当該還流ダイオードを平面視で囲むように前記半導体基板に形成される終端領域をさらに備え、
前記第1電極は前記終端領域にも接続しており、
前記抵抗体は、前記終端領域と前記第1電極との間にも設けられる、
請求項1または請求項2に記載の半導体装置。 - 前記ウェル領域と前記第1電極とは、互いに分離した複数の開口を通して接続されており、
前記複数の開口のそれぞれには前記抵抗体が設けられる、
請求項1から請求項3のいずれか一項に記載の半導体装置。 - 前記抵抗体はポリシリコンである、
請求項1から請求項4のいずれか一項に記載の半導体装置。 - 前記抵抗体はチタンを含む、
請求項1から請求項4のいずれか一項に記載の半導体装置。 - 前記抵抗体はコバルトを含む、
請求項1から請求項4のいずれか一項に記載の半導体装置。 - 前記絶縁ゲート型バイポーラトランジスタは、電子注入促進型である、
請求項1から請求項7のいずれか一項に記載の半導体装置。
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