JP2017224685A - 半導体装置 - Google Patents
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Abstract
Description
第1導電型のドリフト層(17)と、
ドリフト層の一方の表層部に形成された第2導電型のベース層(11)及びアノード層(21)と、
ベース層に選択的に形成されたエミッタ層(13)と、
ドリフト層の他方の表層部に形成される第2導電型のコレクタ層(14)と、第1導電型のカソード層(22)と、を備え、
エミッタ層、ベース層、ドリフト層、及びコレクタ層によってIGBTとして動作するIGBT領域(10)が形成され、IGBT領域に隣接して、アノード層、ドリフト層、及びカソード層によってダイオードとして動作するダイオード領域(20)が形成された半導体基板(50)を備え、
半導体基板において、さらに、IGBT領域及びダイオード領域が隣接して形成されている素子領域を取り囲む外周領域に、アノード層と同電位の電圧が印加される第2導電型のガードリング(30)がドリフト層の表層部に形成され、
カソード層とガードリングとは、半導体基板の表面に平行な面へ投影した場合のカソード層とガードリングとの間の距離の最小値をLとし、半導体基板の厚みをdとしたとき、L/d≧1.5を満たす位置に形成されるように構成されている。
最初に、図1乃至図3を参照して、第1実施形態に係る半導体装置の概略構成について説明する。
次に、第2実施形態に係る半導体装置について説明する。
Claims (6)
- 第1導電型のドリフト層(17)と、
前記ドリフト層の一方の表層部に形成された第2導電型のベース層(11)及びアノード層(21)と、
前記ベース層に選択的に形成されたエミッタ層(13)と、
前記ドリフト層の他方の表層部に形成される第2導電型のコレクタ層(14)と第1導電型のカソード層(22)と、を備え、
前記エミッタ層、前記ベース層、前記ドリフト層、及び前記コレクタ層によってIGBTとして動作するIGBT領域(10)が形成され、前記IGBT領域に隣接して、前記アノード層、前記ドリフト層、及び前記カソード層によってダイオードとして動作するダイオード領域(20)が形成された半導体基板(50)を備え、
前記半導体基板において、さらに、前記IGBT領域及び前記ダイオード領域が隣接して形成されている素子領域を取り囲む外周領域に、前記アノード層と同電位の電圧が印加される第2導電型のガードリング(30)が前記ドリフト層の表層部に形成され、
前記カソード層と前記ガードリングとは、前記半導体基板の表面に平行な面へ投影した場合の前記カソード層と前記ガードリングとの間の距離の最小値をLとし、前記半導体基板の厚みをdとしたとき、L/d≧1.5を満たす位置に形成される半導体装置。 - 前記ドリフト層のうち、少なくとも前記ダイオード領域の前記ドリフト層にダメージ領域(18)が形成されており、
前記ダメージ領域は、前記素子領域を超えて前記外周領域の前記ドリフト層まで達しており、
前記ダメージ領域によってカバーされない前記ガードリングを対象として、前記カソード層と前記ガードリングとは、前記半導体基板の表面に平行な面へ投影した場合の前記カソード層と前記ガードリングとの間の距離の最小値をLとし、前記半導体基板の厚みをdとしたとき、L/d≧1.5を満たす位置に形成されている請求項1に記載の半導体装置。 - 前記カソード層と前記ガードリングとは、L/d≧1.8を満たす位置に形成される請求項1又は2に記載の半導体装置。
- 前記カソード層と前記ガードリングとは、L/d≧2.0を満たす位置に形成される請求項1乃至3のいずれかに記載の半導体装置。
- 前記ガードリングの不純物濃度は、前記アノード層の不純物濃度よりも高い請求項1乃至4のいずれかに記載の半導体装置。
- 前記IGBT領域と前記ダイオード領域とは、前記素子領域において、交互にストライプ状に配列されており、前記素子領域における前記ストライプ状の配列の両端には、前記IGBT領域が設けられる請求項1乃至5のいずれかに記載の半導体装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
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JP2016118218A JP6830767B2 (ja) | 2016-06-14 | 2016-06-14 | 半導体装置 |
PCT/JP2017/019291 WO2017217198A1 (ja) | 2016-06-14 | 2017-05-24 | 半導体装置 |
CN201780036414.1A CN109314143B (zh) | 2016-06-14 | 2017-05-24 | 半导体装置 |
US16/094,222 US10840238B2 (en) | 2016-06-14 | 2017-05-24 | Semiconductor device |
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WO2019159391A1 (ja) * | 2018-02-14 | 2019-08-22 | 富士電機株式会社 | 半導体装置 |
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US10840238B2 (en) | 2020-11-17 |
US20190096878A1 (en) | 2019-03-28 |
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JP6830767B2 (ja) | 2021-02-17 |
WO2017217198A1 (ja) | 2017-12-21 |
CN109314143A (zh) | 2019-02-05 |
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