JP7497744B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP7497744B2 JP7497744B2 JP2022158641A JP2022158641A JP7497744B2 JP 7497744 B2 JP7497744 B2 JP 7497744B2 JP 2022158641 A JP2022158641 A JP 2022158641A JP 2022158641 A JP2022158641 A JP 2022158641A JP 7497744 B2 JP7497744 B2 JP 7497744B2
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- 239000004065 semiconductor Substances 0.000 title claims description 253
- 239000000758 substrate Substances 0.000 claims description 182
- 239000011229 interlayer Substances 0.000 claims description 87
- 230000002093 peripheral effect Effects 0.000 claims description 46
- 239000010410 layer Substances 0.000 description 57
- 238000010586 diagram Methods 0.000 description 48
- 239000000370 acceptor Substances 0.000 description 25
- 238000000034 method Methods 0.000 description 20
- 238000009825 accumulation Methods 0.000 description 14
- 230000005684 electric field Effects 0.000 description 11
- 230000008569 process Effects 0.000 description 11
- 239000000463 material Substances 0.000 description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 9
- 229920005591 polysilicon Polymers 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 230000001681 protective effect Effects 0.000 description 8
- 239000000969 carrier Substances 0.000 description 7
- 230000007547 defect Effects 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000004020 conductor Substances 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 238000011084 recovery Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
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- 230000000694 effects Effects 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
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- 230000001590 oxidative effect Effects 0.000 description 2
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- 229920001721 polyimide Polymers 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
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- 238000005468 ion implantation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
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- 239000002344 surface layer Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
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- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
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- H01L29/42312—Gate electrodes for field effect devices
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- H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
[先行技術文献]
[特許文献]
[特許文献1] WO2018/105299号
Claims (21)
- 半導体基板に設けられた第1導電型のドリフト領域と、
前記半導体基板の上面と前記ドリフト領域との間に設けられた第2導電型のベース領域と、
前記半導体基板の前記上面側に設けられたトレンチ部と、
前記半導体基板の内部において前記トレンチ部に挟まれたメサ部と、
前記半導体基板の上面に設けられた層間絶縁膜と、
前記層間絶縁膜の上方に設けられ、前記メサ部と接続された第1電極と、
前記トレンチ部の下端よりも深い位置に底面が形成された第2導電型のウェル領域と、
を備え、
前記トレンチ部は、前記ウェル領域に挟まれた内側領域において、第1方向に長手を有する非部分トレンチと、前記第1方向に長手を有し、前記第1方向の直線上に設けられ前記非部分トレンチと平行な複数の部分トレンチと、を有し、
前記第1方向において隣り合う一方の前記部分トレンチの下方から他方の前記部分トレンチの下方まで、前記半導体基板の下面に露出する第1導電型の下面側半導体領域が設けられている半導体装置。 - 半導体基板に設けられた第1導電型のドリフト領域と、
前記半導体基板の上面と前記ドリフト領域との間に設けられた第2導電型のベース領域と、
前記半導体基板の前記上面側に設けられたトレンチ部と、
前記半導体基板の内部において前記トレンチ部に挟まれたメサ部と、
前記半導体基板の上面に設けられた層間絶縁膜と、
前記層間絶縁膜の上方に設けられ、前記メサ部と接続された第1電極と、
前記トレンチ部の下端よりも深い位置に底面が形成された第2導電型のウェル領域と、
を備え、
前記トレンチ部は、前記ウェル領域に挟まれた内側領域において、第1方向に長手を有する非部分トレンチと、前記第1方向に長手を有し、前記第1方向の直線上に設けられ前記非部分トレンチと平行な複数の部分トレンチと、を有し、
前記第1方向において隣り合う一方の前記部分トレンチの下方から他方の前記部分トレンチの下方まで、前記半導体基板の下面に露出する第2導電型の下面側半導体領域が設けられている半導体装置。 - 当該半導体装置には、トランジスタ素子を含むトランジスタ部が設けられている
請求項1または2に記載の半導体装置。 - 当該半導体装置には、ダイオード素子を含むダイオード部が設けられている
請求項1から3のいずれか1項に記載の半導体装置。 - 前記半導体基板の上面と接し、前記第1方向において隣り合う一方の前記部分トレンチと他方の前記部分トレンチとの間に設けられるトレンチ間領域を備え、
前記トレンチ間領域は、前記内側領域に設けられている
請求項1から4のいずれか1項に記載の半導体装置。 - トランジスタ素子を含むトランジスタ部が設けられた半導体装置であって、
半導体基板に設けられた第1導電型のドリフト領域と、
前記半導体基板の上面と前記ドリフト領域との間に設けられた第2導電型のベース領域と、
前記半導体基板の前記上面側に設けられたトレンチ部と、
前記半導体基板の内部において前記トレンチ部に挟まれたメサ部と、
前記半導体基板の上面に設けられた層間絶縁膜と、
前記層間絶縁膜の上方に設けられ、前記メサ部と接続された第1電極と、
前記トレンチ部の下端よりも深い位置に底面が形成された第2導電型のウェル領域と、
を備え、
前記トレンチ部は、前記ウェル領域に挟まれた内側領域において、第1方向に長手を有する非部分トレンチと、前記第1方向に長手を有し、前記第1方向の直線上に設けられ前記非部分トレンチと平行な複数の部分トレンチと、を有し、
前記第1方向において隣り合う一方の前記部分トレンチ、他方の前記部分トレンチ、および当該トレンチ間に設けられるトレンチ間領域が、前記トランジスタ部に設けられている半導体装置。 - ダイオード素子を含むダイオード部が設けられた半導体装置であって、
半導体基板に設けられた第1導電型のドリフト領域と、
前記半導体基板の上面と前記ドリフト領域との間に設けられた第2導電型のベース領域と、
前記半導体基板の前記上面側に設けられたトレンチ部と、
前記半導体基板の内部において前記トレンチ部に挟まれたメサ部と、
前記半導体基板の上面に設けられた層間絶縁膜と、
前記層間絶縁膜の上方に設けられ、前記メサ部と接続された第1電極と、
前記トレンチ部の下端よりも深い位置に底面が形成された第2導電型のウェル領域と、
を備え、
前記トレンチ部は、前記ウェル領域に挟まれた内側領域において、第1方向に長手を有する非部分トレンチと、前記第1方向に長手を有し、前記第1方向の直線上に設けられ前記非部分トレンチと平行な複数の部分トレンチと、を有し、
前記第1方向において隣り合う一方の前記部分トレンチ、他方の前記部分トレンチ、および前記一方の前記部分トレンチと前記他方の前記部分トレンチとの間に設けられるトレンチ間領域が、前記ダイオード部に設けられている半導体装置。 - 前記トレンチ間領域が、第1導電型である
請求項5から7のいずれか1項に記載の半導体装置。 - 前記トレンチ間領域が、第2導電型である
請求項5から7のいずれか1項に記載の半導体装置。 - 前記トレンチ間領域は、前記ベース領域に囲まれている
請求項5から9のいずれか1項に記載の半導体装置。 - 前記ウェル領域は、上面視において、主電流が流れる活性部を囲む外周ウェル領域を有する
請求項1から10のいずれか1項に記載の半導体装置。 - 当該半導体装置は、複数のガードリングを有するエッジ終端構造部を含む
請求項1から11のいずれか1項に記載の半導体装置。 - 前記ウェル領域は、前記エッジ終端構造部に隣接して設けられている
請求項12に記載の半導体装置。 - 前記第1方向において前記エッジ終端構造部に最も近い前記トレンチ部の端部の底部が、前記ウェル領域に覆われている
請求項12または13に記載の半導体装置。 - 複数の前記部分トレンチは、上面視において直線形状である
請求項1から14のいずれか1項に記載の半導体装置。 - 前記非部分トレンチは、前記第1電極に接続されている
請求項1から15のいずれか1項に記載の半導体装置。 - 上面視において前記第1方向と垂直な第2方向に少なくとも一部が延伸するゲート配線を備え、
前記部分トレンチは、前記第1電極に接続された第1部分トレンチと、前記ゲート配線に接続された第2部分トレンチと、を有する、
請求項1から16のいずれか1項に記載の半導体装置。 - 前記ゲート配線は、上面視において、前記第1部分トレンチと前記層間絶縁膜を介し重なっている
請求項17に記載の半導体装置。 - 前記第1部分トレンチは、前記第1方向における一方の側の前記層間絶縁膜に設けられたコンタクトホールを介し前記第1電極に接続されていて、前記第1方向における他方の側は前記層間絶縁膜に覆われている
請求項17または18に記載の半導体装置。 - 半導体基板に設けられた第1導電型のドリフト領域と、
前記半導体基板の上面と前記ドリフト領域との間に設けられた第2導電型のベース領域と、
前記半導体基板の前記上面側に設けられたトレンチ部と、
前記半導体基板の内部において前記トレンチ部に挟まれたメサ部と、
前記半導体基板の上面に設けられた層間絶縁膜と、
前記層間絶縁膜の上方に設けられ、前記メサ部と接続された第1電極と、
前記トレンチ部の下端よりも深い位置に底面が形成された第2導電型のウェル領域と、
を備え、
前記トレンチ部は、前記ウェル領域に挟まれた内側領域において、第1方向に長手を有する非部分トレンチと、前記第1方向に長手を有し、前記第1方向の直線上に設けられ前記非部分トレンチと平行な複数の部分トレンチと、を有し、
上面視において前記第1方向と垂直な第2方向に少なくとも一部が延伸するゲート配線を備え、
前記部分トレンチは、前記第1電極に接続された第1部分トレンチを有し、
前記ゲート配線は、上面視において、前記第1部分トレンチと前記層間絶縁膜を介し重なっている半導体装置。 - 半導体基板に設けられた第1導電型のドリフト領域と、
前記半導体基板の上面と前記ドリフト領域との間に設けられた第2導電型のベース領域と、
前記半導体基板の前記上面側に設けられたトレンチ部と、
前記半導体基板の内部において前記トレンチ部に挟まれたメサ部と、
前記半導体基板の上面に設けられた層間絶縁膜と、
前記層間絶縁膜の上方に設けられ、前記メサ部と接続された第1電極と、
前記トレンチ部の下端よりも深い位置に底面が形成された第2導電型のウェル領域と、
を備え、
前記トレンチ部は、前記ウェル領域に挟まれた内側領域において、第1方向に長手を有する非部分トレンチと、前記第1方向に長手を有し、前記第1方向の直線上に設けられ前記非部分トレンチと平行な複数の部分トレンチと、を有し、
上面視において前記第1方向と垂直な第2方向に少なくとも一部が延伸するゲート配線を備え、
前記部分トレンチは、前記第1電極に接続された第1部分トレンチを有し、
前記第1部分トレンチは、前記第1方向における一方の側の前記層間絶縁膜に設けられたコンタクトホールを介し前記第1電極に接続されていて、前記第1方向における他方の側は前記層間絶縁膜に覆われている半導体装置。
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