JP6158123B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6158123B2 JP6158123B2 JP2014052702A JP2014052702A JP6158123B2 JP 6158123 B2 JP6158123 B2 JP 6158123B2 JP 2014052702 A JP2014052702 A JP 2014052702A JP 2014052702 A JP2014052702 A JP 2014052702A JP 6158123 B2 JP6158123 B2 JP 6158123B2
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- 239000004065 semiconductor Substances 0.000 title claims description 142
- 239000012535 impurity Substances 0.000 claims description 28
- 238000002347 injection Methods 0.000 description 8
- 239000007924 injection Substances 0.000 description 8
- 238000011084 recovery Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- -1 n + type Chemical compound 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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Description
図1(a)は、第1実施形態に係る半導体装置を表す模式的断面図であり、図1(b)は、第1実施形態に係る半導体装置を表す模式的平面図である。
ここで、半導体装置500には、上述したp形のシールド領域22が設けられていない。また、カソード領域24の全域上には、ゲート電極50とエミッタ領域40とが設けられている。すなわち、半導体装置500は、逆導通型のIGBTである。
図3(a)および図3(b)は、第1実施形態に係る半導体装置の動作の一例を表す模式的断面図である。
図5は、第2実施形態に係る半導体装置を表す模式的断面図である。
図6は、第3実施形態に係る半導体装置を表す模式的断面図である。
図7(a)は、第4実施形態の第1例に係る半導体装置を表す模式的断面図であり、図7(b)は、第4実施形態の第2例に係る半導体装置を表す模式的断面図である。
Claims (6)
- 第1電極と、
第2電極と、
前記第1電極と前記第2電極との間に設けられた第1導電形の第1半導体領域と、
前記第1電極と前記第1半導体領域との間に設けられた第2導電形の第2半導体領域と、
前記第1電極と前記第2半導体領域との間に設けられ、前記第1電極から前記第2電極に向かう第1方向に対して交差する第2方向において並ぶ第2導電形の第3半導体領域および第1導電形の第4半導体領域と、
前記第3半導体領域と前記第2電極との間に位置し、前記第1半導体領域と前記第2電極との間に設けられた第2導電形の第5半導体領域と、
前記第4半導体領域と前記第2電極との間に位置し、前記第1半導体領域と前記第2電極との間に設けられた第2導電形の第6半導体領域と、
前記第5半導体領域と前記第2電極との間に設けられた第1導電形の第7半導体領域と、
前記第7半導体領域、前記第5半導体領域、および前記第1半導体領域に第1絶縁膜を介して接する第3電極と、
を備えた半導体装置。 - 前記第3半導体領域は、前記第2方向において複数の第1領域に分割され、
前記第2方向において隣り合う前記第1領域によって挟まれた第1導電形の第8半導体領域をさらに備えた請求項1に記載の半導体装置。 - 前記第4半導体領域は、前記第2方向において複数の第2領域に分割され、
前記第2方向において隣り合う前記第2領域によって挟まれた第2導電形の第9半導体領域をさらに備えた請求項1または2に記載の半導体装置。 - 前記第6半導体領域および前記第1半導体領域に第2絶縁膜を介して接する複数の第4電極をさらに備え、
前記複数の第4電極は、前記第2方向に並ぶ請求項1〜3のいずれか1つに記載の半導体装置。 - 前記第2電極と前記第6半導体領域との間に設けられ、前記第2絶縁膜に接し、前記第6半導体領域よりも不純物濃度が高い第2導電形の第10半導体領域をさらに備えた請求項4記載の半導体装置。
- 前記第2方向において、前記第10半導体領域は、前記第2絶縁膜を介して隣り合う前記第4電極に挟まれ、
前記第10半導体領域は、前記第1方向および前記第2方向に交差する第3方向において、複数の第3領域に分割されている請求項5に記載の半導体装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014052702A JP6158123B2 (ja) | 2014-03-14 | 2014-03-14 | 半導体装置 |
KR1020140104348A KR20150107566A (ko) | 2014-03-14 | 2014-08-12 | 반도체 장치 |
CN201410397505.6A CN104916670B (zh) | 2014-03-14 | 2014-08-13 | 半导体装置 |
US14/483,831 US9219060B2 (en) | 2014-03-14 | 2014-09-11 | Semiconductor device |
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JP2014052702A JP6158123B2 (ja) | 2014-03-14 | 2014-03-14 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
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JP2015177057A JP2015177057A (ja) | 2015-10-05 |
JP6158123B2 true JP6158123B2 (ja) | 2017-07-05 |
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JP2014052702A Active JP6158123B2 (ja) | 2014-03-14 | 2014-03-14 | 半導体装置 |
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US (1) | US9219060B2 (ja) |
JP (1) | JP6158123B2 (ja) |
KR (1) | KR20150107566A (ja) |
CN (1) | CN104916670B (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10083956B2 (en) | 2017-02-03 | 2018-09-25 | Kabushiki Kaisha Toshiba | Semiconductor device |
US10490655B2 (en) | 2017-06-29 | 2019-11-26 | Kabushiki Kaisha Toshiba | Insulated gate bipolar transistor (IGBT) with high avalanche withstand |
WO2021220965A1 (ja) * | 2020-04-28 | 2021-11-04 | 株式会社デンソー | 半導体装置 |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6261494B2 (ja) * | 2014-12-03 | 2018-01-17 | 三菱電機株式会社 | 電力用半導体装置 |
DE112015006812B4 (de) * | 2015-08-19 | 2024-02-22 | Mitsubishi Electric Corporation | Halbleitervorrichtung |
JP6743026B2 (ja) * | 2015-08-26 | 2020-08-19 | 三菱電機株式会社 | 半導体素子 |
DE102015120210B4 (de) * | 2015-11-23 | 2019-02-21 | Infineon Technologies Ag | Leistungshalbleitertransistor mit vergrößerter bipolarer Verstärkung |
DE112017000079T5 (de) * | 2016-03-10 | 2018-05-17 | Fuji Electric Co., Ltd. | Halbleitervorrichtung |
JP2017208413A (ja) * | 2016-05-17 | 2017-11-24 | 株式会社デンソー | 半導体装置 |
JP6702423B2 (ja) | 2016-08-12 | 2020-06-03 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
JP6677615B2 (ja) * | 2016-09-20 | 2020-04-08 | 株式会社東芝 | 半導体装置 |
DE102016117723A1 (de) | 2016-09-20 | 2018-03-22 | Infineon Technologies Ag | Diodenstruktur eines Leistungshalbleiterbauelements |
JP6891560B2 (ja) * | 2017-03-15 | 2021-06-18 | 富士電機株式会社 | 半導体装置 |
JP2019004030A (ja) * | 2017-06-14 | 2019-01-10 | 株式会社デンソー | 半導体装置 |
US11393812B2 (en) * | 2017-12-28 | 2022-07-19 | Fuji Electric Co., Ltd. | Semiconductor device and method of manufacturing semiconductor device |
JP7151084B2 (ja) * | 2018-01-11 | 2022-10-12 | 株式会社デンソー | 半導体装置 |
JP6954449B2 (ja) * | 2018-03-15 | 2021-10-27 | 富士電機株式会社 | 半導体装置 |
JP6935351B2 (ja) * | 2018-03-20 | 2021-09-15 | 株式会社東芝 | 半導体装置 |
US10636898B2 (en) * | 2018-08-15 | 2020-04-28 | Kabushiki Kaisha Toshiba | Semiconductor device |
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JP7068994B2 (ja) * | 2018-11-26 | 2022-05-17 | 三菱電機株式会社 | 半導体装置 |
JP7198236B2 (ja) * | 2020-03-13 | 2022-12-28 | 株式会社東芝 | 半導体装置 |
JP7339908B2 (ja) * | 2020-03-19 | 2023-09-06 | 株式会社東芝 | 半導体装置およびその制御方法 |
JP2022169322A (ja) * | 2021-04-27 | 2022-11-09 | 株式会社デンソー | 半導体装置 |
JP2023136874A (ja) * | 2022-03-17 | 2023-09-29 | 株式会社東芝 | 半導体装置 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5294825A (en) * | 1987-02-26 | 1994-03-15 | Kabushiki Kaisha Toshiba | High breakdown voltage semiconductor device |
JP2689047B2 (ja) * | 1991-07-24 | 1997-12-10 | 三菱電機株式会社 | 絶縁ゲート型バイポーラトランジスタとその製造方法 |
JPH05152574A (ja) * | 1991-11-29 | 1993-06-18 | Fuji Electric Co Ltd | 半導体装置 |
US5705835A (en) * | 1994-11-25 | 1998-01-06 | Fuji Electric Co., Ltd. | Semiconductor device and method of manufacturing the same |
JP4566470B2 (ja) | 2001-07-17 | 2010-10-20 | 三菱電機株式会社 | 絶縁ゲート型バイポーラトランジスタ |
JP4090747B2 (ja) * | 2002-01-31 | 2008-05-28 | 三菱電機株式会社 | 絶縁ゲート型半導体装置 |
JP4746927B2 (ja) * | 2005-07-01 | 2011-08-10 | 新電元工業株式会社 | 半導体装置の製造方法 |
JP5002148B2 (ja) * | 2005-11-24 | 2012-08-15 | 株式会社東芝 | 半導体装置 |
JP5036327B2 (ja) | 2007-01-23 | 2012-09-26 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
JP5191132B2 (ja) * | 2007-01-29 | 2013-04-24 | 三菱電機株式会社 | 半導体装置 |
JP2010067901A (ja) * | 2008-09-12 | 2010-03-25 | Toyota Motor Corp | 半導体装置とその製造方法 |
JP2011114027A (ja) | 2009-11-24 | 2011-06-09 | Toshiba Corp | 電力用半導体装置 |
DE102010063728B4 (de) * | 2009-12-28 | 2016-04-14 | Fuji Electric Co., Ltd. | Halbleitervorrichtung mit verbesserter Sperrspannungsfestigkeit |
JP5762689B2 (ja) * | 2010-02-26 | 2015-08-12 | 株式会社東芝 | 半導体装置 |
JP5190485B2 (ja) * | 2010-04-02 | 2013-04-24 | 株式会社豊田中央研究所 | 半導体装置 |
US8564097B2 (en) | 2010-04-15 | 2013-10-22 | Sinopower Semiconductor, Inc. | Reverse conducting IGBT |
JP5672766B2 (ja) * | 2010-05-17 | 2015-02-18 | 株式会社デンソー | 半導体装置 |
JP5865618B2 (ja) * | 2010-09-21 | 2016-02-17 | 株式会社東芝 | 半導体装置 |
JP5321669B2 (ja) * | 2010-11-25 | 2013-10-23 | 株式会社デンソー | 半導体装置 |
JP5737102B2 (ja) | 2011-09-19 | 2015-06-17 | 株式会社デンソー | 半導体装置 |
JP2013201360A (ja) | 2012-03-26 | 2013-10-03 | Toshiba Corp | 半導体装置 |
JP6158058B2 (ja) | 2013-12-04 | 2017-07-05 | 株式会社東芝 | 半導体装置 |
-
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- 2014-08-12 KR KR1020140104348A patent/KR20150107566A/ko not_active Application Discontinuation
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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US10083956B2 (en) | 2017-02-03 | 2018-09-25 | Kabushiki Kaisha Toshiba | Semiconductor device |
US10490655B2 (en) | 2017-06-29 | 2019-11-26 | Kabushiki Kaisha Toshiba | Insulated gate bipolar transistor (IGBT) with high avalanche withstand |
WO2021220965A1 (ja) * | 2020-04-28 | 2021-11-04 | 株式会社デンソー | 半導体装置 |
JP7435214B2 (ja) | 2020-04-28 | 2024-02-21 | 株式会社デンソー | 半導体装置 |
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CN104916670B (zh) | 2018-04-06 |
US20150262999A1 (en) | 2015-09-17 |
CN104916670A (zh) | 2015-09-16 |
KR20150107566A (ko) | 2015-09-23 |
JP2015177057A (ja) | 2015-10-05 |
US9219060B2 (en) | 2015-12-22 |
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