JP7435214B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP7435214B2 JP7435214B2 JP2020079269A JP2020079269A JP7435214B2 JP 7435214 B2 JP7435214 B2 JP 7435214B2 JP 2020079269 A JP2020079269 A JP 2020079269A JP 2020079269 A JP2020079269 A JP 2020079269A JP 7435214 B2 JP7435214 B2 JP 7435214B2
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- 239000004065 semiconductor Substances 0.000 title claims description 79
- 239000010410 layer Substances 0.000 claims description 261
- 239000000758 substrate Substances 0.000 claims description 46
- 239000002344 surface layer Substances 0.000 claims description 4
- 238000004088 simulation Methods 0.000 description 12
- 238000010586 diagram Methods 0.000 description 9
- 239000011229 interlayer Substances 0.000 description 7
- 239000012535 impurity Substances 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
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- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
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- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Description
第1実施形態について、図面を参照しつつ説明する。なお、本実施形態の半導体装置は、例えば、インバータ、DC/DCコンバータ等の電源回路に使用されるパワースイッチング素子として利用されると好適である。
第2実施形態について説明する。本実施形態は、第1実施形態に対し、延設部21aの構成を変更したものである。その他に関しては、第1実施形態と同様であるため、ここでは説明を省略する。
第3実施形態について説明する。本実施形態は、第1実施形態に対し、コレクタ層21のキャリア濃度のピーク位置を規定したものである。その他に関しては、第1実施形態と同様であるため、ここでは説明を省略する。
本発明は上記した実施形態に限定されるものではなく、特許請求の範囲に記載した範囲内において適宜変更が可能である。
1b FWD領域
10 半導体基板
10a 一面
10b 他面
11 ドリフト層
12 ベース層
19 上部電極(第1電極)
21 コレクタ層
21a 延設部
22 カソード層
24 下部電極(第2電極)
Claims (2)
- IGBT素子を有するIGBT領域(1a)と、FWD素子を有するFWD領域(1b)とが共通の半導体基板(10)に形成されている半導体装置であって、
前記IGBT領域と前記FWD領域とを有し、第1導電型のドリフト層(11)と、前記ドリフト層上に形成された第2導電型のベース層(12)と、前記IGBT領域において、前記ドリフト層のうちの前記ベース層側と反対側に形成された第2導電型のコレクタ層(21)と、前記FWD領域において、前記ドリフト層のうちの前記ベース層側と反対側に形成された第1導電型のカソード層(22)と、を含み、前記ベース層側の面を一面(10a)とし、前記コレクタ層および前記カソード層側の面を他面(10b)とする前記半導体基板と、
前記IGBT領域において、前記ベース層の表層部に形成された第1導電型のエミッタ領域(16)と、
前記IGBT領域において、前記ベース層のうちの前記ドリフト層と前記エミッタ領域との間に形成されたゲート絶縁膜(14)と、
前記ゲート絶縁膜上に形成されたゲート電極(15)と、
前記半導体基板の一面側に配置され、前記ベース層および前記エミッタ領域と電気的に接続される第1電極(19)と、
前記半導体基板の他面側に配置され、前記コレクタ層および前記カソード層と電気的に接続される第2電極(24)と、を備え、
前記コレクタ層は、前記カソード層のうちの前記ドリフト層側に位置する全ての領域を覆う延設部(21a)を有し、
前記延設部は、面密度が3.5×1012cm-2以下とされている半導体装置。 - 前記コレクタ層は、前記半導体基板の他面からの深さ方向において、キャリア濃度が最大となる最大ピーク位置(P1)が前記コレクタ層の深さ方向における中心(C1)よりも前記ドリフト層側に位置している請求項1に記載の半導体装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020079269A JP7435214B2 (ja) | 2020-04-28 | 2020-04-28 | 半導体装置 |
CN202180030791.0A CN115485857A (zh) | 2020-04-28 | 2021-04-23 | 半导体装置 |
PCT/JP2021/016486 WO2021220965A1 (ja) | 2020-04-28 | 2021-04-23 | 半導体装置 |
US17/972,945 US20230037409A1 (en) | 2020-04-28 | 2022-10-25 | Semiconductor device |
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JP2020079269A JP7435214B2 (ja) | 2020-04-28 | 2020-04-28 | 半導体装置 |
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JP2021174924A JP2021174924A (ja) | 2021-11-01 |
JP2021174924A5 JP2021174924A5 (ja) | 2022-11-07 |
JP7435214B2 true JP7435214B2 (ja) | 2024-02-21 |
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US (1) | US20230037409A1 (ja) |
JP (1) | JP7435214B2 (ja) |
CN (1) | CN115485857A (ja) |
WO (1) | WO2021220965A1 (ja) |
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JP2023064576A (ja) | 2021-10-26 | 2023-05-11 | 住友ゴム工業株式会社 | タイヤ |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003303965A (ja) | 2002-04-09 | 2003-10-24 | Toshiba Corp | 半導体素子及びその製造方法 |
JP6158123B2 (ja) | 2014-03-14 | 2017-07-05 | 株式会社東芝 | 半導体装置 |
WO2019176810A1 (ja) | 2018-03-15 | 2019-09-19 | 富士電機株式会社 | 半導体装置 |
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JP4746927B2 (ja) * | 2005-07-01 | 2011-08-10 | 新電元工業株式会社 | 半導体装置の製造方法 |
JP2016086136A (ja) * | 2014-10-29 | 2016-05-19 | トヨタ自動車株式会社 | 半導体装置の製造方法 |
JP7024626B2 (ja) * | 2018-06-27 | 2022-02-24 | 三菱電機株式会社 | 半導体装置、半導体装置の製造方法 |
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2020
- 2020-04-28 JP JP2020079269A patent/JP7435214B2/ja active Active
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2021
- 2021-04-23 WO PCT/JP2021/016486 patent/WO2021220965A1/ja active Application Filing
- 2021-04-23 CN CN202180030791.0A patent/CN115485857A/zh active Pending
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- 2022-10-25 US US17/972,945 patent/US20230037409A1/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003303965A (ja) | 2002-04-09 | 2003-10-24 | Toshiba Corp | 半導体素子及びその製造方法 |
JP6158123B2 (ja) | 2014-03-14 | 2017-07-05 | 株式会社東芝 | 半導体装置 |
WO2019176810A1 (ja) | 2018-03-15 | 2019-09-19 | 富士電機株式会社 | 半導体装置 |
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JP2021174924A (ja) | 2021-11-01 |
US20230037409A1 (en) | 2023-02-09 |
CN115485857A (zh) | 2022-12-16 |
WO2021220965A1 (ja) | 2021-11-04 |
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