JP2010278436A5 - - Google Patents

Download PDF

Info

Publication number
JP2010278436A5
JP2010278436A5 JP2010117419A JP2010117419A JP2010278436A5 JP 2010278436 A5 JP2010278436 A5 JP 2010278436A5 JP 2010117419 A JP2010117419 A JP 2010117419A JP 2010117419 A JP2010117419 A JP 2010117419A JP 2010278436 A5 JP2010278436 A5 JP 2010278436A5
Authority
JP
Japan
Prior art keywords
region
lateral
power
conductivity type
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2010117419A
Other languages
English (en)
Japanese (ja)
Other versions
JP5655255B2 (ja
JP2010278436A (ja
Filing date
Publication date
Priority claimed from US12/455,187 external-priority patent/US8207580B2/en
Application filed filed Critical
Publication of JP2010278436A publication Critical patent/JP2010278436A/ja
Publication of JP2010278436A5 publication Critical patent/JP2010278436A5/ja
Application granted granted Critical
Publication of JP5655255B2 publication Critical patent/JP5655255B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2010117419A 2009-05-29 2010-05-21 パワー集積回路デバイス Active JP5655255B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/455,187 2009-05-29
US12/455,187 US8207580B2 (en) 2009-05-29 2009-05-29 Power integrated circuit device with incorporated sense FET

Publications (3)

Publication Number Publication Date
JP2010278436A JP2010278436A (ja) 2010-12-09
JP2010278436A5 true JP2010278436A5 (enExample) 2013-07-04
JP5655255B2 JP5655255B2 (ja) 2015-01-21

Family

ID=42671916

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010117419A Active JP5655255B2 (ja) 2009-05-29 2010-05-21 パワー集積回路デバイス

Country Status (4)

Country Link
US (3) US8207580B2 (enExample)
EP (1) EP2256816A2 (enExample)
JP (1) JP5655255B2 (enExample)
CN (2) CN101901805B (enExample)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8129815B2 (en) 2009-08-20 2012-03-06 Power Integrations, Inc High-voltage transistor device with integrated resistor
US8164125B2 (en) 2010-05-07 2012-04-24 Power Integrations, Inc. Integrated transistor and anti-fuse as programming element for a high-voltage integrated circuit
US8305826B2 (en) 2010-05-07 2012-11-06 Power Integrations, Inc. Method and apparatus for programming an anti-fuse element in a high-voltage integrated circuit
US7932738B1 (en) 2010-05-07 2011-04-26 Power Integrations, Inc. Method and apparatus for reading a programmable anti-fuse element in a high-voltage integrated circuit
DE102011076610A1 (de) * 2010-06-04 2011-12-08 Denso Corporation Stromsensor, inverterschaltung und diese aufweisende halbleitervorrichtung
JP5585481B2 (ja) * 2011-02-10 2014-09-10 株式会社デンソー 半導体装置
US9064712B2 (en) 2010-08-12 2015-06-23 Freescale Semiconductor Inc. Monolithic microwave integrated circuit
CN102354694A (zh) * 2011-08-25 2012-02-15 复旦大学 一种自对准的垂直式非挥发性半导体存储器件
US8907340B2 (en) * 2011-09-23 2014-12-09 Infineon Technologies Austria Ag Semiconductor arrangement with an integrated hall sensor
CN103091533B (zh) * 2011-11-03 2014-12-10 上海华虹宏力半导体制造有限公司 用ldmos器件实现的电流采样电路
US9673081B2 (en) * 2012-05-25 2017-06-06 Newport Fab, Llc Isolated through silicon via and isolated deep silicon via having total or partial isolation
CN103489912B (zh) * 2012-06-12 2016-02-24 无锡华润上华半导体有限公司 一种高压结型场效应晶体管
US9048284B2 (en) * 2012-06-28 2015-06-02 Skyworks Solutions, Inc. Integrated RF front end system
US9761700B2 (en) 2012-06-28 2017-09-12 Skyworks Solutions, Inc. Bipolar transistor on high-resistivity substrate
WO2014004535A1 (en) * 2012-06-28 2014-01-03 Skyworks Solutions, Inc. Bipolar transistor on high-resistivity substrate
CN102810540B (zh) * 2012-07-31 2015-05-27 电子科技大学 一种具有电流采样功能的横向双扩散金属氧化物半导体器件
CN102779821B (zh) * 2012-07-31 2015-04-15 电子科技大学 一种集成了采样电阻的电流检测ldmos器件
US8916440B2 (en) 2012-08-03 2014-12-23 International Business Machines Corporation Semiconductor structures and methods of manufacture
JP5904905B2 (ja) * 2012-08-23 2016-04-20 株式会社東芝 半導体装置
CN103000626B (zh) 2012-11-28 2015-08-26 深圳市明微电子股份有限公司 合成结构的高压器件及启动电路
CN103904078A (zh) * 2012-12-28 2014-07-02 旺宏电子股份有限公司 高电压接面场效晶体管结构
US9082773B2 (en) * 2013-01-30 2015-07-14 Infineon Technologies Ag Integrated circuit, semiconductor device and method of manufacturing a semiconductor device
JP6319761B2 (ja) * 2013-06-25 2018-05-09 ローム株式会社 半導体装置
US9373613B2 (en) * 2013-12-31 2016-06-21 Skyworks Solutions, Inc. Amplifier voltage limiting using punch-through effect
US9281835B2 (en) 2014-03-03 2016-03-08 Microsemi Corp.—Analog Mixed Signal Group, Ltd. Method and apparatus for wide range input for an analog to digital converter
CN103887961B (zh) * 2014-04-18 2015-06-10 杭州士兰微电子股份有限公司 开关电源及其控制器
DE102014106825B4 (de) 2014-05-14 2019-06-27 Infineon Technologies Ag Halbleitervorrichtung
US10784372B2 (en) * 2015-04-03 2020-09-22 Magnachip Semiconductor, Ltd. Semiconductor device with high voltage field effect transistor and junction field effect transistor
KR101975630B1 (ko) * 2015-04-03 2019-08-29 매그나칩 반도체 유한회사 접합 트랜지스터와 고전압 트랜지스터 구조를 포함한 반도체 소자 및 그 제조 방법
WO2017104516A1 (ja) 2015-12-18 2017-06-22 ローム株式会社 半導体装置
US10490548B2 (en) 2016-04-08 2019-11-26 Power Integrations, Inc. Integrated resistor for semiconductor device
FR3057087B1 (fr) * 2016-09-30 2018-11-16 Stmicroelectronics (Rousset) Sas Puce electronique protegee
JP6722101B2 (ja) * 2016-12-27 2020-07-15 ルネサスエレクトロニクス株式会社 半導体装置および過電流保護装置
US10135357B1 (en) 2017-09-07 2018-11-20 Power Integrations, Inc. Threshold detection with tap
CN109768089B (zh) * 2019-01-23 2021-04-13 电子科技大学 一种基于SenseFET的压控采样器件
CN110545032B (zh) 2019-10-08 2024-07-30 杭州必易微电子有限公司 一种集成启动功能的功率晶体管模块和电压变换电路
EP3944316A1 (en) * 2020-07-21 2022-01-26 Nexperia B.V. An electrostatic discharge protection semiconductor structure and a method of manufacture
US20230387211A1 (en) * 2022-05-30 2023-11-30 Taiwan Semiconductor Manufacturing Company Ltd. High voltage device and method for forming the same
CN117954486A (zh) * 2022-08-25 2024-04-30 英诺赛科（珠海）科技有限公司 具有晶片级动态导通电阻监测能力的氮化物基电子装置
CN115497937B (zh) * 2022-08-31 2025-01-14 杭州云镓半导体科技有限公司 一种功率器件以及相应的制作方法

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62114459A (ja) 1985-11-14 1987-05-26 Hitachi Metals Ltd リニアモ−タ
JPH0319231Y2 (enExample) * 1986-01-08 1991-04-23
US5563437A (en) * 1992-02-21 1996-10-08 Motorola, Inc. Semiconductor device having a large sense voltage
JP3168763B2 (ja) * 1992-03-30 2001-05-21 株式会社デンソー 半導体装置及びその製造方法
JP3265712B2 (ja) * 1992-05-25 2002-03-18 松下電器産業株式会社 高耐圧半導体装置及びその製造方法
US5446300A (en) * 1992-11-04 1995-08-29 North American Philips Corporation Semiconductor device configuration with multiple HV-LDMOS transistors and a floating well circuit
US5691555A (en) * 1993-05-19 1997-11-25 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno Integrated structure current sensing resistor for power devices particularly for overload self-protected power MOS devices
EP0625797B1 (en) * 1993-05-19 1999-08-11 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno Integrated structure current sensing resistor for power MOS devices, particularly for overload self-protected power MOS devices
JP3289518B2 (ja) * 1994-11-14 2002-06-10 日産自動車株式会社 トランジスタ・ゲート駆動電圧発生回路
JP3303648B2 (ja) * 1996-02-07 2002-07-22 横河電機株式会社 半導体リレー
JP3572853B2 (ja) * 1997-03-12 2004-10-06 株式会社デンソー 電流検出機能を有する負荷駆動回路
US6404006B2 (en) * 1998-12-01 2002-06-11 Vantis Corporation EEPROM cell with tunneling across entire separated channels
US6259618B1 (en) * 2000-05-03 2001-07-10 Analog And Power Electronics Corp. Power chip set for a switching mode power supply having a device for providing a drive signal to a control unit upon startup
US6304108B1 (en) * 2000-07-14 2001-10-16 Micrel, Incorporated Reference-corrected ratiometric MOS current sensing circuit
US6690082B2 (en) * 2001-09-28 2004-02-10 Agere Systems Inc. High dopant concentration diffused resistor and method of manufacture therefor
US6600362B1 (en) * 2002-02-08 2003-07-29 Toko, Inc. Method and circuits for parallel sensing of current in a field effect transistor (FET)
US7719054B2 (en) * 2006-05-31 2010-05-18 Advanced Analogic Technologies, Inc. High-voltage lateral DMOS device
JP2005019781A (ja) * 2003-06-27 2005-01-20 Trecenti Technologies Inc 固体撮像装置およびその製造方法
US6818939B1 (en) * 2003-07-18 2004-11-16 Semiconductor Components Industries, L.L.C. Vertical compound semiconductor field effect transistor structure
US6943069B2 (en) * 2003-10-14 2005-09-13 Semiconductor Components Industries, L.L.C. Power system inhibit method and device and structure therefor
US7180132B2 (en) * 2004-09-16 2007-02-20 Fairchild Semiconductor Corporation Enhanced RESURF HVPMOS device with stacked hetero-doping RIM and gradual drift region
US20060158812A1 (en) * 2005-01-14 2006-07-20 Harris Richard A Transient blocking unit having shunt for over-voltage protection
JP5110519B2 (ja) * 2005-08-30 2012-12-26 国立大学法人静岡大学 半導体測距素子及び固体撮像装置
US7944000B2 (en) * 2006-06-12 2011-05-17 Ricoh Company, Ltd. Semiconductor resistor, method of manufacturing the same, and current generating device using the same
US7911031B2 (en) * 2006-08-21 2011-03-22 System General Corporation Voltage-controlled semiconductor structure, resistor, and manufacturing processes thereof
KR100932137B1 (ko) * 2007-06-08 2009-12-16 주식회사 동부하이텍 수평형 디모스 소자의 구조 및 그 제조방법
JP2009081381A (ja) * 2007-09-27 2009-04-16 Panasonic Corp 半導体装置
US8063443B2 (en) * 2007-10-30 2011-11-22 Fairchild Semiconductor Corporation Hybrid-mode LDMOS
US7829971B2 (en) * 2007-12-14 2010-11-09 Denso Corporation Semiconductor apparatus
US7999318B2 (en) * 2007-12-28 2011-08-16 Volterra Semiconductor Corporation Heavily doped region in double-diffused source MOSFET (LDMOS) transistor and a method of fabricating the same
KR101463076B1 (ko) * 2008-03-28 2014-12-05 페어차일드코리아반도체 주식회사 레벨 시프트 소자들을 구비하는 고압 반도체소자 및 그의제조방법
US7939882B2 (en) * 2008-04-07 2011-05-10 Alpha And Omega Semiconductor Incorporated Integration of sense FET into discrete power MOSFET
US7799646B2 (en) * 2008-04-07 2010-09-21 Alpha & Omega Semiconductor, Ltd Integration of a sense FET into a discrete power MOSFET

Similar Documents

Publication Publication Date Title
JP2010278436A5 (enExample)
JP5655255B2 (ja) パワー集積回路デバイス
US9184230B2 (en) Silicon carbide vertical field effect transistor
CN103633083B (zh) 形成超高耐压电阻的版图结构
CN202871797U (zh) 一种横向高压晶体管
JP2010157636A5 (enExample)
JP2010080963A5 (enExample)
JP2011155255A5 (ja) 半導体装置
TW200707738A (en) Substrate backgate for trigate FET
JP2011119688A5 (enExample)
JP2002319675A5 (enExample)
JP2013115433A5 (ja) 半導体素子
JP2005183661A5 (enExample)
JP2018504778A5 (enExample)
JP2019161103A5 (enExample)
JP2014033200A5 (enExample)
JP2014120758A5 (enExample)
JP2011009352A5 (ja) 半導体装置
JP2012238850A5 (enExample)
JP2013038398A5 (enExample)
JP2005535113A5 (enExample)
JPWO2019135137A5 (ja) 半導体装置
JP2015015329A5 (enExample)
JP2013243353A5 (enExample)
JP2011210901A5 (enExample)