JP2013243353A5 - - Google Patents

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Publication number
JP2013243353A5
JP2013243353A5 JP2013090946A JP2013090946A JP2013243353A5 JP 2013243353 A5 JP2013243353 A5 JP 2013243353A5 JP 2013090946 A JP2013090946 A JP 2013090946A JP 2013090946 A JP2013090946 A JP 2013090946A JP 2013243353 A5 JP2013243353 A5 JP 2013243353A5
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JP
Japan
Prior art keywords
conductive layer
insulating layer
layer
insulating
transistor
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Application number
JP2013090946A
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English (en)
Japanese (ja)
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JP2013243353A (ja
JP6108935B2 (ja
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Priority to JP2013090946A priority Critical patent/JP6108935B2/ja
Priority claimed from JP2013090946A external-priority patent/JP6108935B2/ja
Publication of JP2013243353A publication Critical patent/JP2013243353A/ja
Publication of JP2013243353A5 publication Critical patent/JP2013243353A5/ja
Application granted granted Critical
Publication of JP6108935B2 publication Critical patent/JP6108935B2/ja
Expired - Fee Related legal-status Critical Current
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JP2013090946A 2012-04-27 2013-04-24 スタンダードセル、半導体装置、及び電子機器 Expired - Fee Related JP6108935B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2013090946A JP6108935B2 (ja) 2012-04-27 2013-04-24 スタンダードセル、半導体装置、及び電子機器

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012102167 2012-04-27
JP2012102167 2012-04-27
JP2013090946A JP6108935B2 (ja) 2012-04-27 2013-04-24 スタンダードセル、半導体装置、及び電子機器

Publications (3)

Publication Number Publication Date
JP2013243353A JP2013243353A (ja) 2013-12-05
JP2013243353A5 true JP2013243353A5 (enExample) 2016-06-16
JP6108935B2 JP6108935B2 (ja) 2017-04-05

Family

ID=49843919

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013090946A Expired - Fee Related JP6108935B2 (ja) 2012-04-27 2013-04-24 スタンダードセル、半導体装置、及び電子機器

Country Status (1)

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JP (1) JP6108935B2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6000863B2 (ja) * 2013-01-24 2016-10-05 株式会社半導体エネルギー研究所 半導体装置、及びその駆動方法
US10074576B2 (en) * 2014-02-28 2018-09-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
JP6553444B2 (ja) * 2014-08-08 2019-07-31 株式会社半導体エネルギー研究所 半導体装置
WO2016128853A1 (en) 2015-02-09 2016-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic component, and electronic device
WO2021090104A1 (ja) * 2019-11-08 2021-05-14 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
WO2025243156A1 (ja) * 2024-05-23 2025-11-27 株式会社半導体エネルギー研究所 半導体装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3746979B2 (ja) * 2001-10-03 2006-02-22 富士通株式会社 半導体装置及びその製造方法
FR2839581B1 (fr) * 2002-05-07 2005-07-01 St Microelectronics Sa Circuit electronique comprenant un condensateur et au moins un composant semiconducteur, et procede de conception d'un tel circuit
JP4872197B2 (ja) * 2004-08-25 2012-02-08 カシオ計算機株式会社 薄膜トランジスタパネル及びその製造方法
KR101729933B1 (ko) * 2009-12-18 2017-04-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 불휘발성 래치 회로와 논리 회로, 및 이를 사용한 반도체 장치

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