JP6108935B2 - スタンダードセル、半導体装置、及び電子機器 - Google Patents

スタンダードセル、半導体装置、及び電子機器 Download PDF

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Publication number
JP6108935B2
JP6108935B2 JP2013090946A JP2013090946A JP6108935B2 JP 6108935 B2 JP6108935 B2 JP 6108935B2 JP 2013090946 A JP2013090946 A JP 2013090946A JP 2013090946 A JP2013090946 A JP 2013090946A JP 6108935 B2 JP6108935 B2 JP 6108935B2
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transistor
conductive layer
insulating layer
layer
electrically connected
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Japanese (ja)
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JP2013243353A (ja
JP2013243353A5 (enExample
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拓郎 王丸
拓郎 王丸
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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  • Thin Film Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
JP2013090946A 2012-04-27 2013-04-24 スタンダードセル、半導体装置、及び電子機器 Expired - Fee Related JP6108935B2 (ja)

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JP2013090946A JP6108935B2 (ja) 2012-04-27 2013-04-24 スタンダードセル、半導体装置、及び電子機器

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JP2012102167 2012-04-27
JP2012102167 2012-04-27
JP2013090946A JP6108935B2 (ja) 2012-04-27 2013-04-24 スタンダードセル、半導体装置、及び電子機器

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JP2013243353A JP2013243353A (ja) 2013-12-05
JP2013243353A5 JP2013243353A5 (enExample) 2016-06-16
JP6108935B2 true JP6108935B2 (ja) 2017-04-05

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Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6000863B2 (ja) * 2013-01-24 2016-10-05 株式会社半導体エネルギー研究所 半導体装置、及びその駆動方法
US10074576B2 (en) * 2014-02-28 2018-09-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
JP6553444B2 (ja) * 2014-08-08 2019-07-31 株式会社半導体エネルギー研究所 半導体装置
WO2016128853A1 (en) 2015-02-09 2016-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic component, and electronic device
WO2021090104A1 (ja) * 2019-11-08 2021-05-14 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
WO2025243156A1 (ja) * 2024-05-23 2025-11-27 株式会社半導体エネルギー研究所 半導体装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3746979B2 (ja) * 2001-10-03 2006-02-22 富士通株式会社 半導体装置及びその製造方法
FR2839581B1 (fr) * 2002-05-07 2005-07-01 St Microelectronics Sa Circuit electronique comprenant un condensateur et au moins un composant semiconducteur, et procede de conception d'un tel circuit
JP4872197B2 (ja) * 2004-08-25 2012-02-08 カシオ計算機株式会社 薄膜トランジスタパネル及びその製造方法
KR101729933B1 (ko) * 2009-12-18 2017-04-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 불휘발성 래치 회로와 논리 회로, 및 이를 사용한 반도체 장치

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