JP2019161103A5 - - Google Patents
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- JP2019161103A5 JP2019161103A5 JP2018048141A JP2018048141A JP2019161103A5 JP 2019161103 A5 JP2019161103 A5 JP 2019161103A5 JP 2018048141 A JP2018048141 A JP 2018048141A JP 2018048141 A JP2018048141 A JP 2018048141A JP 2019161103 A5 JP2019161103 A5 JP 2019161103A5
- Authority
- JP
- Japan
- Prior art keywords
- region
- threshold
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- base
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 claims 12
- 239000012535 impurity Substances 0.000 claims 4
- 230000000149 penetrating effect Effects 0.000 claims 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018048141A JP2019161103A (ja) | 2018-03-15 | 2018-03-15 | 半導体装置 |
| US16/129,336 US10651276B2 (en) | 2018-03-15 | 2018-09-12 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018048141A JP2019161103A (ja) | 2018-03-15 | 2018-03-15 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2019161103A JP2019161103A (ja) | 2019-09-19 |
| JP2019161103A5 true JP2019161103A5 (enExample) | 2020-03-26 |
Family
ID=67904751
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018048141A Pending JP2019161103A (ja) | 2018-03-15 | 2018-03-15 | 半導体装置 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US10651276B2 (enExample) |
| JP (1) | JP2019161103A (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7371426B2 (ja) * | 2019-10-02 | 2023-10-31 | 富士電機株式会社 | 半導体装置 |
| JP7179236B2 (ja) | 2020-10-23 | 2022-11-28 | ヌヴォトンテクノロジージャパン株式会社 | 半導体装置 |
| JP7608790B2 (ja) | 2020-11-05 | 2025-01-07 | 富士電機株式会社 | 半導体装置 |
| JP7475265B2 (ja) | 2020-12-14 | 2024-04-26 | 三菱電機株式会社 | 半導体装置及び半導体装置の製造方法 |
| CN114695534B (zh) * | 2020-12-31 | 2025-05-23 | 芯恩（青岛）集成电路有限公司 | 多阈值逻辑功率器件及制备方法 |
| CN114695533B (zh) * | 2020-12-31 | 2025-08-19 | 芯恩（青岛）集成电路有限公司 | 多阈值逻辑功率器件、制备方法及同时读取多阈值的方法 |
| US11888060B2 (en) * | 2021-09-01 | 2024-01-30 | Semiconductor Components Industries, Llc | Power MOSFET with improved safe operating area |
| CN116169160A (zh) * | 2023-02-03 | 2023-05-26 | 西安电子科技大学 | 提升屏蔽栅沟槽mos器件安全工作区能力的结构及制备方法 |
| CN116364755A (zh) * | 2023-03-14 | 2023-06-30 | 瑶芯微电子科技(上海)有限公司 | 屏蔽栅沟槽型mosfet器件及其制作方法 |
| CN117174758B (zh) * | 2023-11-03 | 2024-02-23 | 陕西亚成微电子股份有限公司 | Sgt mosfet器件及制备方法 |
| CN118248736B (zh) * | 2024-05-23 | 2024-08-30 | 华羿微电子股份有限公司 | 一种宽soa屏蔽栅mosfet器件及制备方法 |
| CN118571921B (zh) * | 2024-08-01 | 2024-11-08 | 华羿微电子股份有限公司 | 一种mosfet器件有源区结构、mosfet器件及制备方法 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB0426412D0 (en) | 2004-12-02 | 2005-01-05 | Koninkl Philips Electronics Nv | Insulated gate field effect transistors |
| JP5561922B2 (ja) * | 2008-05-20 | 2014-07-30 | 三菱電機株式会社 | パワー半導体装置 |
| JP2011003609A (ja) * | 2009-06-16 | 2011-01-06 | Toshiba Corp | 電力用半導体素子 |
| US9087893B2 (en) * | 2010-01-29 | 2015-07-21 | Fuji Electric Co., Ltd. | Superjunction semiconductor device with reduced switching loss |
| JP2011176077A (ja) * | 2010-02-24 | 2011-09-08 | Toshiba Corp | 半導体装置 |
| JP2013258333A (ja) | 2012-06-13 | 2013-12-26 | Toshiba Corp | 電力用半導体装置 |
| JP6577558B2 (ja) * | 2012-08-21 | 2019-09-18 | ローム株式会社 | 半導体装置 |
| US10418899B2 (en) * | 2014-04-14 | 2019-09-17 | Alpha And Omega Semiconductor Incorporated | MOSFET switch circuit for slow switching application |
| US9496339B2 (en) * | 2014-06-02 | 2016-11-15 | Infineon Technologies Austria Ag | Semiconductor device comprising trench structures |
| JP2016054181A (ja) | 2014-09-03 | 2016-04-14 | トヨタ自動車株式会社 | 絶縁ゲート型スイッチング素子 |
| US10103140B2 (en) * | 2016-10-14 | 2018-10-16 | Alpha And Omega Semiconductor Incorporated | Switch circuit with controllable phase node ringing |
-
2018
- 2018-03-15 JP JP2018048141A patent/JP2019161103A/ja active Pending
- 2018-09-12 US US16/129,336 patent/US10651276B2/en active Active
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