JP2018101683A5 - - Google Patents

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JP2018101683A5
JP2018101683A5 JP2016246521A JP2016246521A JP2018101683A5 JP 2018101683 A5 JP2018101683 A5 JP 2018101683A5 JP 2016246521 A JP2016246521 A JP 2016246521A JP 2016246521 A JP2016246521 A JP 2016246521A JP 2018101683 A5 JP2018101683 A5 JP 2018101683A5
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JP2018101683A (ja
JP6710627B2 (ja
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Priority to US15/847,342 priority patent/US10468523B2/en
Priority to CN201711381037.3A priority patent/CN108321203B/zh
Publication of JP2018101683A publication Critical patent/JP2018101683A/ja
Publication of JP2018101683A5 publication Critical patent/JP2018101683A5/ja
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JP2016246521A 2016-12-20 2016-12-20 半導体装置およびその製造方法 Active JP6710627B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2016246521A JP6710627B2 (ja) 2016-12-20 2016-12-20 半導体装置およびその製造方法
US15/847,342 US10468523B2 (en) 2016-12-20 2017-12-19 Semiconductor device and method for manufacturing the same
CN201711381037.3A CN108321203B (zh) 2016-12-20 2017-12-20 半导体器件及其制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016246521A JP6710627B2 (ja) 2016-12-20 2016-12-20 半導体装置およびその製造方法

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JP2018101683A JP2018101683A (ja) 2018-06-28
JP2018101683A5 true JP2018101683A5 (enExample) 2019-05-30
JP6710627B2 JP6710627B2 (ja) 2020-06-17

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JP2016246521A Active JP6710627B2 (ja) 2016-12-20 2016-12-20 半導体装置およびその製造方法

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US (1) US10468523B2 (enExample)
JP (1) JP6710627B2 (enExample)
CN (1) CN108321203B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6837384B2 (ja) * 2017-05-23 2021-03-03 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US10424647B2 (en) * 2017-10-19 2019-09-24 Texas Instruments Incorporated Transistors having gates with a lift-up region
JP7195167B2 (ja) * 2019-02-08 2022-12-23 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
US11195915B2 (en) * 2019-04-15 2021-12-07 Texas Instruments Incorporated Semiconductor devices with a sloped surface
US11222955B2 (en) * 2020-04-22 2022-01-11 Wolfspeed, Inc. Semiconductor power devices having gate dielectric layers with improved breakdown characteristics and methods of forming such devices
US11469307B2 (en) * 2020-09-29 2022-10-11 Taiwan Semiconductor Manufacturing Company, Ltd. Thicker corner of a gate dielectric structure around a recessed gate electrode for an MV device
US12057475B2 (en) * 2021-03-11 2024-08-06 Taiwan Semiconductor Manufacturing Company Limited Field effect transistor including a downward-protruding gate electrode and methods for forming the same
US20240030341A1 (en) * 2022-07-25 2024-01-25 Globalfoundries U.S. Inc. High performance laterally-diffused metal-oxide semiconductor structure
US20240162345A1 (en) * 2022-11-10 2024-05-16 Globalfoundries U.S. Inc. Transistor with metal field plate contact
TWI828536B (zh) * 2023-02-08 2024-01-01 力晶積成電子製造股份有限公司 電晶體結構及其製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100722012B1 (ko) * 1999-06-03 2007-05-25 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 반도체 디바이스
JP2005183633A (ja) * 2003-12-18 2005-07-07 Toyota Central Res & Dev Lab Inc 半導体装置とその製造方法
JP5385679B2 (ja) * 2008-05-16 2014-01-08 旭化成エレクトロニクス株式会社 横方向半導体デバイスおよびその製造方法
WO2014061254A1 (ja) * 2012-10-16 2014-04-24 旭化成エレクトロニクス株式会社 電界効果トランジスタ及び半導体装置
JP6279346B2 (ja) * 2014-02-27 2018-02-14 ルネサスエレクトロニクス株式会社 半導体装置

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