CN104737298A - 分裂栅功率半导体场效应晶体管 - Google Patents
分裂栅功率半导体场效应晶体管 Download PDFInfo
- Publication number
- CN104737298A CN104737298A CN201480002400.4A CN201480002400A CN104737298A CN 104737298 A CN104737298 A CN 104737298A CN 201480002400 A CN201480002400 A CN 201480002400A CN 104737298 A CN104737298 A CN 104737298A
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- splitting bar
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- 230000005669 field effect Effects 0.000 title abstract description 5
- 239000004065 semiconductor Substances 0.000 title abstract description 5
- 238000004519 manufacturing process Methods 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 16
- 239000010410 layer Substances 0.000 claims description 35
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 30
- 238000009792 diffusion process Methods 0.000 claims description 26
- 238000000059 patterning Methods 0.000 claims description 22
- 238000005468 ion implantation Methods 0.000 claims description 21
- 229910052751 metal Inorganic materials 0.000 claims description 20
- 239000002184 metal Substances 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 16
- 239000000377 silicon dioxide Substances 0.000 claims description 15
- 238000005530 etching Methods 0.000 claims description 14
- 238000000137 annealing Methods 0.000 claims description 11
- 239000011229 interlayer Substances 0.000 claims description 10
- 238000001259 photo etching Methods 0.000 claims description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 10
- 229920005591 polysilicon Polymers 0.000 claims description 10
- 229910021332 silicide Inorganic materials 0.000 claims description 10
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 10
- 230000015572 biosynthetic process Effects 0.000 claims description 9
- 230000003139 buffering effect Effects 0.000 claims description 8
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 229910044991 metal oxide Inorganic materials 0.000 abstract 1
- 150000004706 metal oxides Chemical class 0.000 abstract 1
- 230000005684 electric field Effects 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- 238000001459 lithography Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000007850 degeneration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/405—Resistive arrangements, e.g. resistive or semi-insulating field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/42376—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the length or the sectional shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
- H01L29/66333—Vertical insulated gate bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
Abstract
Description
Claims (22)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
HK13114188 | 2013-12-23 | ||
HK131141888 | 2013-12-23 | ||
PCT/CN2014/093007 WO2015096605A1 (zh) | 2013-12-23 | 2014-12-04 | 分裂栅功率半导体场效应晶体管 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104737298A true CN104737298A (zh) | 2015-06-24 |
CN104737298B CN104737298B (zh) | 2017-06-23 |
Family
ID=53477519
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201480002400.4A Active CN104737298B (zh) | 2013-12-23 | 2014-12-04 | 分裂栅功率半导体场效应晶体管 |
Country Status (4)
Country | Link |
---|---|
US (2) | US9397178B2 (zh) |
EP (1) | EP3089216B1 (zh) |
CN (1) | CN104737298B (zh) |
WO (1) | WO2015096605A1 (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105428316A (zh) * | 2015-11-05 | 2016-03-23 | 深圳深爱半导体股份有限公司 | 金属氧化物半导体场效应管及其制造方法 |
CN106098761A (zh) * | 2016-06-29 | 2016-11-09 | 黄嘉杰 | 一种绝缘栅双极型晶体管结构及其制造方法 |
CN108878275A (zh) * | 2017-05-10 | 2018-11-23 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件的制备方法 |
CN112802906A (zh) * | 2021-04-15 | 2021-05-14 | 成都蓉矽半导体有限公司 | 带浮栅的分离栅平面型mosfet器件 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6526579B2 (ja) * | 2016-01-15 | 2019-06-05 | 株式会社東芝 | 半導体装置 |
CN108666361B (zh) * | 2017-03-31 | 2022-04-12 | 深圳尚阳通科技有限公司 | 一种通孔免对位的功率器件及其制造方法 |
CN107946360B (zh) * | 2017-05-02 | 2023-10-20 | 中国电子科技集团公司第二十四研究所 | 一种带载流子寿命调节区的功率mosfet器件及其制造方法 |
CN112885900B (zh) * | 2019-11-29 | 2022-04-15 | 苏州东微半导体股份有限公司 | 一种igbt器件 |
JP2022046240A (ja) * | 2020-09-10 | 2022-03-23 | 株式会社東芝 | 半導体装置 |
CN112382659A (zh) * | 2020-11-12 | 2021-02-19 | 中国科学院半导体研究所 | 一种元胞内带绝缘结构的功率半导体器件及制备方法 |
CN114744042A (zh) * | 2022-03-24 | 2022-07-12 | 苏州迈志微半导体有限公司 | 功率晶体管 |
Citations (4)
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US6025229A (en) * | 1997-12-24 | 2000-02-15 | United Semiconductor Corp. | Method of fabricating split-gate source side injection flash memory array |
WO2006122130A2 (en) * | 2005-05-09 | 2006-11-16 | Alpha & Omega Semiconductor, Ltd. | Power mosfet device structure for high frequency applications |
US20070228498A1 (en) * | 2006-04-04 | 2007-10-04 | Renesas Technology Corp. | Semiconductor device and a method of manufacturing the same |
CN103456790A (zh) * | 2012-06-01 | 2013-12-18 | 台湾积体电路制造股份有限公司 | 垂直功率mosfet及其形成方法 |
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JP3125567B2 (ja) * | 1994-03-28 | 2001-01-22 | 富士電機株式会社 | 絶縁ゲート型サイリスタ |
DE19905421B4 (de) * | 1999-02-10 | 2005-07-28 | Semikron Elektronik Gmbh | Leistungshalbleiterbauelement mit reduzierter Millerkapazität |
KR20010040186A (ko) * | 1999-10-27 | 2001-05-15 | 인터실 코포레이션 | 디모스, 절연게이트 바이폴라 트랜지스터, 및 금속 산화막반도체 전계 효과 트랜지스터 등의 전력 모스 소자의게이트 전하 및 게이트/드레인 정전용량 최소화기술 |
JP3906105B2 (ja) * | 2002-03-29 | 2007-04-18 | 株式会社東芝 | 半導体装置 |
JP2004079988A (ja) * | 2002-06-19 | 2004-03-11 | Toshiba Corp | 半導体装置 |
GB0422476D0 (en) * | 2004-10-09 | 2004-11-10 | Koninkl Philips Electronics Nv | Power semiconductor devices |
US7504676B2 (en) * | 2006-05-31 | 2009-03-17 | Alpha & Omega Semiconductor, Ltd. | Planar split-gate high-performance MOSFET structure and manufacturing method |
US9425306B2 (en) * | 2009-08-27 | 2016-08-23 | Vishay-Siliconix | Super junction trench power MOSFET devices |
US20120220092A1 (en) * | 2009-10-21 | 2012-08-30 | Vishay-Siliconix | Method of forming a hybrid split gate simiconductor |
AU2011241423A1 (en) * | 2010-04-13 | 2012-11-08 | Gan Systems Inc. | High density gallium nitride devices using island topology |
US8779510B2 (en) * | 2010-06-01 | 2014-07-15 | Alpha And Omega Semiconductor Incorporated | Semiconductor power devices manufactured with self-aligned processes and more reliable electrical contacts |
WO2014163058A1 (ja) * | 2013-03-31 | 2014-10-09 | 新電元工業株式会社 | 半導体装置 |
-
2014
- 2014-12-04 US US14/766,594 patent/US9397178B2/en active Active
- 2014-12-04 WO PCT/CN2014/093007 patent/WO2015096605A1/zh active Application Filing
- 2014-12-04 EP EP14875355.1A patent/EP3089216B1/en active Active
- 2014-12-04 CN CN201480002400.4A patent/CN104737298B/zh active Active
-
2016
- 2016-06-21 US US15/188,694 patent/US9825149B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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US6025229A (en) * | 1997-12-24 | 2000-02-15 | United Semiconductor Corp. | Method of fabricating split-gate source side injection flash memory array |
WO2006122130A2 (en) * | 2005-05-09 | 2006-11-16 | Alpha & Omega Semiconductor, Ltd. | Power mosfet device structure for high frequency applications |
US20070228498A1 (en) * | 2006-04-04 | 2007-10-04 | Renesas Technology Corp. | Semiconductor device and a method of manufacturing the same |
CN103456790A (zh) * | 2012-06-01 | 2013-12-18 | 台湾积体电路制造股份有限公司 | 垂直功率mosfet及其形成方法 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105428316A (zh) * | 2015-11-05 | 2016-03-23 | 深圳深爱半导体股份有限公司 | 金属氧化物半导体场效应管及其制造方法 |
CN105428316B (zh) * | 2015-11-05 | 2018-05-15 | 深圳深爱半导体股份有限公司 | 金属氧化物半导体场效应管及其制造方法 |
CN106098761A (zh) * | 2016-06-29 | 2016-11-09 | 黄嘉杰 | 一种绝缘栅双极型晶体管结构及其制造方法 |
CN106098761B (zh) * | 2016-06-29 | 2019-06-07 | 黄嘉杰 | 一种绝缘栅双极型晶体管结构及其制造方法 |
CN108878275A (zh) * | 2017-05-10 | 2018-11-23 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件的制备方法 |
CN112802906A (zh) * | 2021-04-15 | 2021-05-14 | 成都蓉矽半导体有限公司 | 带浮栅的分离栅平面型mosfet器件 |
Also Published As
Publication number | Publication date |
---|---|
US20170040428A1 (en) | 2017-02-09 |
CN104737298B (zh) | 2017-06-23 |
EP3089216B1 (en) | 2020-09-23 |
US9397178B2 (en) | 2016-07-19 |
US9825149B2 (en) | 2017-11-21 |
EP3089216A4 (en) | 2017-10-11 |
WO2015096605A1 (zh) | 2015-07-02 |
EP3089216A1 (en) | 2016-11-02 |
US20150372103A1 (en) | 2015-12-24 |
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