GB0422476D0 - Power semiconductor devices - Google Patents

Power semiconductor devices

Info

Publication number
GB0422476D0
GB0422476D0 GBGB0422476.2A GB0422476A GB0422476D0 GB 0422476 D0 GB0422476 D0 GB 0422476D0 GB 0422476 A GB0422476 A GB 0422476A GB 0422476 D0 GB0422476 D0 GB 0422476D0
Authority
GB
United Kingdom
Prior art keywords
semiconductor devices
power semiconductor
power
devices
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
GBGB0422476.2A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Priority to GBGB0422476.2A priority Critical patent/GB0422476D0/en
Publication of GB0422476D0 publication Critical patent/GB0422476D0/en
Priority to PCT/IB2005/053289 priority patent/WO2006038201A2/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
GBGB0422476.2A 2004-10-09 2004-10-09 Power semiconductor devices Ceased GB0422476D0 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GBGB0422476.2A GB0422476D0 (en) 2004-10-09 2004-10-09 Power semiconductor devices
PCT/IB2005/053289 WO2006038201A2 (en) 2004-10-09 2005-10-06 Power semiconductor device and corresponding circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB0422476.2A GB0422476D0 (en) 2004-10-09 2004-10-09 Power semiconductor devices

Publications (1)

Publication Number Publication Date
GB0422476D0 true GB0422476D0 (en) 2004-11-10

Family

ID=33443654

Family Applications (1)

Application Number Title Priority Date Filing Date
GBGB0422476.2A Ceased GB0422476D0 (en) 2004-10-09 2004-10-09 Power semiconductor devices

Country Status (2)

Country Link
GB (1) GB0422476D0 (en)
WO (1) WO2006038201A2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3089216B1 (en) * 2013-12-23 2020-09-23 Zhongshan Hkg Technologies Limited Split-gate power semiconductor field-effect transistor
CN109817708B (en) * 2019-01-28 2023-10-31 江苏矽导集成科技有限公司 Fast switch IGBT structure

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8204855A (en) * 1982-12-16 1984-07-16 Philips Nv FIELD-EFFECT TRANSISTOR WITH INSULATED STEERING ELECTRODES AND METHOD OF MANUFACTURING THESE.
JPH0834311B2 (en) * 1987-06-10 1996-03-29 日本電装株式会社 Method for manufacturing semiconductor device
EP1552562A1 (en) * 2002-10-04 2005-07-13 Koninklijke Philips Electronics N.V. Power semiconductor devices

Also Published As

Publication number Publication date
WO2006038201A2 (en) 2006-04-13
WO2006038201A3 (en) 2006-09-14

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Legal Events

Date Code Title Description
AT Applications terminated before publication under section 16(1)