JP2018504778A5 - - Google Patents

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Publication number
JP2018504778A5
JP2018504778A5 JP2017533808A JP2017533808A JP2018504778A5 JP 2018504778 A5 JP2018504778 A5 JP 2018504778A5 JP 2017533808 A JP2017533808 A JP 2017533808A JP 2017533808 A JP2017533808 A JP 2017533808A JP 2018504778 A5 JP2018504778 A5 JP 2018504778A5
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JP
Japan
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layer
region
reverse conducting
mos device
protective layer
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JP2017533808A
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English (en)
Japanese (ja)
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JP7030515B2 (ja
JP2018504778A (ja
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Priority claimed from PCT/EP2015/080947 external-priority patent/WO2016102549A1/en
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Publication of JP2018504778A5 publication Critical patent/JP2018504778A5/ja
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JP2017533808A 2014-12-23 2015-12-22 逆導通半導体装置 Active JP7030515B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP14200101 2014-12-23
EP14200101.5 2014-12-23
PCT/EP2015/080947 WO2016102549A1 (en) 2014-12-23 2015-12-22 Reverse-conducting semiconductor device

Publications (3)

Publication Number Publication Date
JP2018504778A JP2018504778A (ja) 2018-02-15
JP2018504778A5 true JP2018504778A5 (enExample) 2019-01-17
JP7030515B2 JP7030515B2 (ja) 2022-03-07

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ID=52231999

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017533808A Active JP7030515B2 (ja) 2014-12-23 2015-12-22 逆導通半導体装置

Country Status (5)

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US (1) US10109725B2 (enExample)
EP (1) EP3238260B1 (enExample)
JP (1) JP7030515B2 (enExample)
CN (1) CN107112353B (enExample)
WO (1) WO2016102549A1 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6649102B2 (ja) * 2016-02-05 2020-02-19 ルネサスエレクトロニクス株式会社 半導体装置
JP6854654B2 (ja) * 2017-01-26 2021-04-07 ローム株式会社 半導体装置
JP6897166B2 (ja) * 2017-03-03 2021-06-30 株式会社豊田中央研究所 半導体装置
US10355132B2 (en) 2017-03-20 2019-07-16 North Carolina State University Power MOSFETs with superior high frequency figure-of-merit
JP6804379B2 (ja) * 2017-04-24 2020-12-23 三菱電機株式会社 半導体装置
DE102018102279A1 (de) * 2018-02-01 2019-08-01 Infineon Technologies Ag Halbleiterbauelement mit randabschlussbereich
CN111211157A (zh) * 2018-11-21 2020-05-29 深圳比亚迪微电子有限公司 快恢复二极管及其制备方法
CN110190029B (zh) * 2019-04-28 2021-07-09 爱特微(张家港)半导体技术有限公司 一种功率半导体器件的制备方法
DE102019111786A1 (de) * 2019-05-07 2020-11-12 Infineon Technologies Ag Leistungshalbleitervorrichtung und Verfahren
JP7227110B2 (ja) * 2019-09-18 2023-02-21 株式会社東芝 半導体装置
CN110610986B (zh) * 2019-10-09 2023-03-14 重庆邮电大学 一种利用结终端集成横向续流二极管的rc-igbt器件
CN110797403B (zh) * 2019-10-18 2023-08-01 上海睿驱微电子科技有限公司 一种rc-igbt半导体装置
CN110854180B (zh) * 2019-11-27 2024-04-16 吉林华微电子股份有限公司 终端结构的制造方法、终端结构及半导体器件
US20210273090A1 (en) * 2020-03-02 2021-09-02 Cree, Inc. Semiconductor die with improved edge termination
CN113782592B (zh) * 2021-09-10 2023-08-29 重庆邮电大学 一种衬底集成反并联续流二极管的rc-ligbt器件

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0799307A (ja) * 1993-09-29 1995-04-11 Fuji Electric Co Ltd 半導体装置およびその製造方法
JP4357753B2 (ja) 2001-01-26 2009-11-04 株式会社東芝 高耐圧半導体装置
JP4873002B2 (ja) 2008-12-12 2012-02-08 株式会社デンソー 半導体装置の製造方法
JP4905559B2 (ja) * 2009-01-27 2012-03-28 株式会社デンソー 半導体装置
EP2249392B1 (en) * 2009-04-29 2020-05-20 ABB Power Grids Switzerland AG Reverse-conducting semiconductor device
WO2011157814A2 (en) 2010-06-17 2011-12-22 Abb Technology Ag Power semiconductor device
US8716746B2 (en) * 2010-08-17 2014-05-06 Denso Corporation Semiconductor device
JP5787655B2 (ja) * 2010-11-26 2015-09-30 三菱電機株式会社 炭化珪素半導体装置およびその製造方法
JP5459403B2 (ja) * 2011-03-28 2014-04-02 トヨタ自動車株式会社 縦型半導体装置
US9508870B2 (en) 2012-04-13 2016-11-29 Mitsubishi Electric Corporation Diode
JP2014038937A (ja) * 2012-08-16 2014-02-27 Mitsubishi Electric Corp 半導体装置
CN104704635A (zh) 2012-10-02 2015-06-10 三菱电机株式会社 半导体装置及其制造方法
JP5939127B2 (ja) * 2012-10-22 2016-06-22 住友電気工業株式会社 炭化珪素半導体装置
WO2014087522A1 (ja) 2012-12-06 2014-06-12 三菱電機株式会社 半導体装置
JP2014175377A (ja) 2013-03-07 2014-09-22 Mitsubishi Electric Corp 炭化珪素半導体装置およびその製造方法
JP2014192433A (ja) 2013-03-28 2014-10-06 Sanken Electric Co Ltd 半導体装置
JP6224454B2 (ja) * 2013-12-27 2017-11-01 株式会社豊田中央研究所 縦型半導体装置
JP6261494B2 (ja) * 2014-12-03 2018-01-17 三菱電機株式会社 電力用半導体装置

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