CN107112353B - 反向传导半导体装置 - Google Patents

反向传导半导体装置 Download PDF

Info

Publication number
CN107112353B
CN107112353B CN201580070745.8A CN201580070745A CN107112353B CN 107112353 B CN107112353 B CN 107112353B CN 201580070745 A CN201580070745 A CN 201580070745A CN 107112353 B CN107112353 B CN 107112353B
Authority
CN
China
Prior art keywords
layer
region
protective layer
doping concentration
mos device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201580070745.8A
Other languages
English (en)
Chinese (zh)
Other versions
CN107112353A (zh
Inventor
L.斯托拉斯塔
C.科瓦斯塞
M.勒加洛
M.拉希莫
A.科普塔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Energy Ltd
Original Assignee
ABB Grid Switzerland AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ABB Grid Switzerland AG filed Critical ABB Grid Switzerland AG
Publication of CN107112353A publication Critical patent/CN107112353A/zh
Application granted granted Critical
Publication of CN107112353B publication Critical patent/CN107112353B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H10D30/655—Lateral DMOS [LDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/152—Source regions of DMOS transistors
    • H10D62/154—Dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/151—LDMOS having built-in components
    • H10D84/153—LDMOS having built-in components the built-in component being PN junction diodes
    • H10D84/154—LDMOS having built-in components the built-in component being PN junction diodes in antiparallel diode configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thyristors (AREA)
CN201580070745.8A 2014-12-23 2015-12-22 反向传导半导体装置 Active CN107112353B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP14200101 2014-12-23
EP14200101.5 2014-12-23
PCT/EP2015/080947 WO2016102549A1 (en) 2014-12-23 2015-12-22 Reverse-conducting semiconductor device

Publications (2)

Publication Number Publication Date
CN107112353A CN107112353A (zh) 2017-08-29
CN107112353B true CN107112353B (zh) 2020-12-22

Family

ID=52231999

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201580070745.8A Active CN107112353B (zh) 2014-12-23 2015-12-22 反向传导半导体装置

Country Status (5)

Country Link
US (1) US10109725B2 (enExample)
EP (1) EP3238260B1 (enExample)
JP (1) JP7030515B2 (enExample)
CN (1) CN107112353B (enExample)
WO (1) WO2016102549A1 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6649102B2 (ja) * 2016-02-05 2020-02-19 ルネサスエレクトロニクス株式会社 半導体装置
JP6854654B2 (ja) * 2017-01-26 2021-04-07 ローム株式会社 半導体装置
JP6897166B2 (ja) * 2017-03-03 2021-06-30 株式会社豊田中央研究所 半導体装置
US10355132B2 (en) 2017-03-20 2019-07-16 North Carolina State University Power MOSFETs with superior high frequency figure-of-merit
JP6804379B2 (ja) 2017-04-24 2020-12-23 三菱電機株式会社 半導体装置
DE102018102279A1 (de) * 2018-02-01 2019-08-01 Infineon Technologies Ag Halbleiterbauelement mit randabschlussbereich
CN111211157A (zh) * 2018-11-21 2020-05-29 深圳比亚迪微电子有限公司 快恢复二极管及其制备方法
CN110190029B (zh) * 2019-04-28 2021-07-09 爱特微(张家港)半导体技术有限公司 一种功率半导体器件的制备方法
DE102019111786A1 (de) * 2019-05-07 2020-11-12 Infineon Technologies Ag Leistungshalbleitervorrichtung und Verfahren
JP7227110B2 (ja) * 2019-09-18 2023-02-21 株式会社東芝 半導体装置
CN110610986B (zh) * 2019-10-09 2023-03-14 重庆邮电大学 一种利用结终端集成横向续流二极管的rc-igbt器件
CN110797403B (zh) * 2019-10-18 2023-08-01 上海睿驱微电子科技有限公司 一种rc-igbt半导体装置
CN110854180B (zh) * 2019-11-27 2024-04-16 吉林华微电子股份有限公司 终端结构的制造方法、终端结构及半导体器件
US20210273090A1 (en) * 2020-03-02 2021-09-02 Cree, Inc. Semiconductor die with improved edge termination
CN113782592B (zh) * 2021-09-10 2023-08-29 重庆邮电大学 一种衬底集成反并联续流二极管的rc-ligbt器件

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0799307A (ja) * 1993-09-29 1995-04-11 Fuji Electric Co Ltd 半導体装置およびその製造方法
JP4357753B2 (ja) 2001-01-26 2009-11-04 株式会社東芝 高耐圧半導体装置
JP4873002B2 (ja) 2008-12-12 2012-02-08 株式会社デンソー 半導体装置の製造方法
JP4905559B2 (ja) * 2009-01-27 2012-03-28 株式会社デンソー 半導体装置
EP2249392B1 (en) * 2009-04-29 2020-05-20 ABB Power Grids Switzerland AG Reverse-conducting semiconductor device
KR101679107B1 (ko) * 2010-06-17 2016-11-23 에이비비 슈바이쯔 아게 전력 반도체 디바이스
US8716746B2 (en) * 2010-08-17 2014-05-06 Denso Corporation Semiconductor device
JP5787655B2 (ja) * 2010-11-26 2015-09-30 三菱電機株式会社 炭化珪素半導体装置およびその製造方法
CN103155152B (zh) * 2011-03-28 2015-07-01 丰田自动车株式会社 纵型半导体装置
DE112012006215B4 (de) * 2012-04-13 2020-09-10 Mitsubishi Electric Corp. Diode
JP2014038937A (ja) * 2012-08-16 2014-02-27 Mitsubishi Electric Corp 半導体装置
CN104704635A (zh) * 2012-10-02 2015-06-10 三菱电机株式会社 半导体装置及其制造方法
JP5939127B2 (ja) * 2012-10-22 2016-06-22 住友電気工業株式会社 炭化珪素半導体装置
CN104854701B (zh) * 2012-12-06 2017-11-21 三菱电机株式会社 半导体装置
JP2014175377A (ja) 2013-03-07 2014-09-22 Mitsubishi Electric Corp 炭化珪素半導体装置およびその製造方法
JP2014192433A (ja) 2013-03-28 2014-10-06 Sanken Electric Co Ltd 半導体装置
JP6224454B2 (ja) 2013-12-27 2017-11-01 株式会社豊田中央研究所 縦型半導体装置
JP6261494B2 (ja) * 2014-12-03 2018-01-17 三菱電機株式会社 電力用半導体装置

Also Published As

Publication number Publication date
US10109725B2 (en) 2018-10-23
EP3238260B1 (en) 2020-03-25
US20170294526A1 (en) 2017-10-12
EP3238260A1 (en) 2017-11-01
CN107112353A (zh) 2017-08-29
JP2018504778A (ja) 2018-02-15
WO2016102549A1 (en) 2016-06-30
JP7030515B2 (ja) 2022-03-07

Similar Documents

Publication Publication Date Title
CN107112353B (zh) 反向传导半导体装置
US11094808B2 (en) Semiconductor device
US8212283B2 (en) Reverse-conducting semiconductor device
CN103489905B (zh) 窄的有源单元ie型沟槽栅极igbt及其制造方法
US9825128B2 (en) Vertical power transistor with thin bottom emitter layer and dopants implanted in trenches in shield area and termination rings
JP4930894B2 (ja) 半導体装置
US7157785B2 (en) Semiconductor device, the method of manufacturing the same, and two-way switching device using the semiconductor devices
JP5865618B2 (ja) 半導体装置
KR101683751B1 (ko) 전력 반도체 디바이스
CN108292669B (zh) 关断型功率半导体器件及其制造方法
US8217420B2 (en) Power semiconductor device
US11075285B2 (en) Insulated gate power semiconductor device and method for manufacturing such a device
JP7127389B2 (ja) 炭化珪素半導体装置
JP2019503591A (ja) パワー半導体デバイス
US9553086B2 (en) Reverse-conducting semiconductor device
CN105226057A (zh) 反向导通功率半导体器件
US10186573B2 (en) Lateral power MOSFET with non-horizontal RESURF structure
WO2016001182A2 (en) Semiconductor device
TWI607563B (zh) With a thin bottom emitter layer and in the trenches in the shielded area and the termination ring Incoming dopant vertical power transistors
CN117063294A (zh) 碳化硅半导体装置

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
TA01 Transfer of patent application right
TA01 Transfer of patent application right

Effective date of registration: 20200512

Address after: Baden, Switzerland

Applicant after: ABB grid Switzerland AG

Address before: Baden, Switzerland

Applicant before: ABB Switzerland Co.,Ltd.

GR01 Patent grant
GR01 Patent grant
CP01 Change in the name or title of a patent holder
CP01 Change in the name or title of a patent holder

Address after: Swiss Baden

Patentee after: Hitachi energy Switzerland AG

Address before: Swiss Baden

Patentee before: ABB grid Switzerland AG

TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20240108

Address after: Zurich, SUI

Patentee after: Hitachi Energy Co.,Ltd.

Address before: Swiss Baden

Patentee before: Hitachi energy Switzerland AG