CN107112353A - 反向传导半导体装置 - Google Patents
反向传导半导体装置 Download PDFInfo
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- CN107112353A CN107112353A CN201580070745.8A CN201580070745A CN107112353A CN 107112353 A CN107112353 A CN 107112353A CN 201580070745 A CN201580070745 A CN 201580070745A CN 107112353 A CN107112353 A CN 107112353A
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- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
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- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Thyristors (AREA)
Abstract
Description
Claims (15)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP14200101 | 2014-12-23 | ||
EP14200101.5 | 2014-12-23 | ||
PCT/EP2015/080947 WO2016102549A1 (en) | 2014-12-23 | 2015-12-22 | Reverse-conducting semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
CN107112353A true CN107112353A (zh) | 2017-08-29 |
CN107112353B CN107112353B (zh) | 2020-12-22 |
Family
ID=52231999
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201580070745.8A Active CN107112353B (zh) | 2014-12-23 | 2015-12-22 | 反向传导半导体装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US10109725B2 (zh) |
EP (1) | EP3238260B1 (zh) |
JP (1) | JP7030515B2 (zh) |
CN (1) | CN107112353B (zh) |
WO (1) | WO2016102549A1 (zh) |
Cited By (1)
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