CN110797403A - 一种rc-igbt半导体装置 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 22
- 230000004888 barrier function Effects 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 230000005684 electric field Effects 0.000 claims description 10
- 229910052681 coesite Inorganic materials 0.000 claims description 6
- 229910052906 cristobalite Inorganic materials 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 5
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- 229920005591 polysilicon Polymers 0.000 claims description 3
- 125000006850 spacer group Chemical group 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- 239000000463 material Substances 0.000 claims description 2
- 230000003071 parasitic effect Effects 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 6
- 238000011084 recovery Methods 0.000 description 6
- 230000010355 oscillation Effects 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- 238000006073 displacement reaction Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000013329 compounding Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
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Abstract
本发明公开了一种RC‑IGBT半导体装置，在一个衬底上形成有IGBT和FWD，IGBT具有p型基极层和n型漂移层和多个沟槽栅极结构，栅电极穿过p型基极层，p型基极层由栅电极分成多个间隔区域；在间隔区域中，p型基极层上表面设置有p+发射极区和n+发射极区，n+发射极及p型基极层的侧壁均与沟槽侧壁外表面相接触；FWD设置有形成在n型漂移层表面的多个虚拟沟道，以及在衬底上形成的n型漂移层；在n型漂移层上平行虚拟沟道方向设置有多段p型基区，所述p型基区将位于虚拟沟道之间的n型漂移层隔离出n‑漂移区，所述n‑漂移区上覆盖有肖特基势垒区。本发明实现低寄生电容，获得低集电极发射极饱和压降VCE(sat)和大短路电流安全工作区。
Description
技术领域
本发明属于半导体技术领域，具体涉及一种RC-IGBT半导体装置。
背景技术
IGBT是Insulated Gate Bipolar Transistor(绝缘栅双极型晶体管)的缩写，IGBT是由MOSFET和双极型晶体管复合而成的一种器件，其输入极为MOSFET，输出极为PNP晶体管，它融和了这两种器件的优点，既具有MOSFET器件驱动功率小和开关速度快的优点，又具有双极型器件饱和压降低而容量大的优点，其频率特性介于MOSFET与功率晶体管之间，可正常工作于几十kHz频率范围内，在现代电力电子技术中得到了越来越广泛的应用，在较高频率的大、中功率应用中占据了主导地位。
逆导型IGBT(Revers conducting IGBT)是将续流二极管(Free wheeling diode)集成到一个芯片中，具有尺寸小、高功率密度、成本低、高可靠性等诸多优点，不足的是对于IGBT开关速度较高，IGBT关断时及FWD逆向恢复时，产生很高的di/dt，由于模块周围的接线电感，就产生了L di/dt即关断浪涌电压。
IGBT关断过程中，集-射极电压变化率duce/dt通过密勒电容CGC反馈到栅极，会形成位移电流iGC。在电压UCE缓慢上升时，栅极电压处于密勒平台，这个位移电流最初保持稳定并有助于维持平台电压恒定。位移电流的幅值完全依赖于反馈电容CGC。反过来这也会受到IGBT内部的氧化层等效电容和电流控制等效结电容的影响。IGBT关断的电流lC越大，电容CGC也就越大。这是由于IGBT内部空间电荷区的结构造成的，该结构由结电容组成。因此，被关断的集电极电流IC越大，产生的位移电流iGC就越大，这也就容易理解了。当半导体并联连接时，这种正反馈可能引发振荡。内置式FWD在IGBT关断时产生较高的尖峰电压并在FWD反向恢复时电压产生振荡。
发明内容
本发明所要解决的技术问题是如何在IGBT的关断阶段避免高的di/dt和dv/dt引起的电压和电流的振荡，提供一种RC-IGBT半导体装置。
本发明所取得的有益技术效果：
本发明实现低寄生电容，获得低集电极发射极饱和压降VCE(sat)和大短路电流安全工作区；
本发明FWD部分的p+/p-阳极区和阴极N+/N-对载流子的有效抑制，其反向恢复功耗大幅降低。来自IGBT区域背面的空穴进入抑制了二极管反向恢复条件下的电压振荡，并且N+/N-阴极能够减小反向恢复过程中的拖尾电流。此外，通过将碰撞电离电固定在沟槽的底部并从背面注入空穴，靠近表面和背面电场强度减弱；采用了肖特基势垒区能够降低器件的势垒，同时保持优良的耐高压、高温特性和浪涌能力；
本发明FWD阴极区部分的p+集电极的宽度大于n+集电极的宽度，由于p+集电极宽度的增大，器件从MOSFET工作模式转变为双极性IGBT工作模式的影响被削弱，器件能更好地进入IGBT模式，FWD导通电压小于传统RC-IGBT。
说明书附图
图1传统RC-IGBT的结构示意图；
图2是本发明具体实施例提供的RC-IGBT的结构示意图；
图3是本发明具体实施例提供的RC-IGBT的结构示意图；
图4是是本发明具体实施例提供的RC-IGBT的AA'线的横截面的结构示意图；
图5是本发明具体实施例提供的RC-IGBT的BB'线的横截面的结构示意图；
图6是本发明具体实施例提供的RC-IGBT的结构示意图；
图中标记：1：发射极电极；2：n+发射极区；3：多晶硅栅电极；5：N型漂移层；6：n型电场阻止层；7：p+集电极区；8：n+集电极区；9：p型基区；10：集电极电极；11：n型存储区；12：p+发射极区；13：n-漂移区；14：绝缘膜；15：栅氧化层；16-肖特基势垒区。
具体实施方式
下面结合附图对本发明作进一步描述。以下实施例仅用于更加清楚地说明本发明的技术方案，而不能以此来限制本发明的保护范围。
传统的RC-IGBT的结构如图1所示，当集电极和发射极电压VCE>0，在栅极开启的情况下，RC-IGBT中的IGBT进入导通状态，集成续流二极管截止；当集电极加反向电压时，集电极和发射极电压VCE<0,IGBT关断时，感性电路中的电感通过RC-IGBT体内集成的续流二极管进行续流放电，续流二极管正向导通。当集电极电压VCE<0时，集成二极管导通，但N+短路区的面积较小，其体内发生电导调制效应较弱，由于p+集电极区7的存在，是的n型FS层和p+集电极区7形成PN结反片，增大了器件正向导通压降。
因此RC-IGBT实现了正反向均可以导通的功能，节约了制造成本缩小了器件体积。但是这种传统的RC-IGBT结构的不足是对于IGBT开关速度较高，IGBT关断时及FWD逆向恢复时，产生很高的di/dt，由于模块周围的接线电感，就产生了L di/dt即关断浪涌电压。
为解决上述技术问题，本发明采用以下技术方案：
实施方式一：提供一种RC-IGBT半导体装置(如图2所示)，包括：
IGBT具有：p型基区9和n型漂移层5，所述p型基区9形成在n型漂移层5的表面；
多个沟槽栅结构，每个所述沟槽栅极结构包括在所述衬底上的沟槽、所述沟槽中的导电膜以及IGBT元件的多晶硅栅电极3和栅氧化层4；所述衬底上的所述沟槽内设置有SiO2栅氧化层4，SiO2栅氧化层4上沉积有多晶硅；在所述沟槽的内壁上形成绝缘膜14；通过所述绝缘膜14，在所述沟槽中形成导电膜。
所述栅电极3穿过所述p型基区9，所述p型基区9由所述栅电极3分成多个间隔区域；
在所述间隔区域中，所述p型基区9上表面设置有p+发射极区12和n+发射极区2，所述p+发射极区12与所述n+发射极区2彼此独立；所述n+发射极区2设置在p+发射极区12的两侧；n+发射极区2设置在所述间隔区域的表面部分中，所述n+发射极及p型基区9的侧壁均与沟槽侧壁外表面相接触，所述n+发射极区2和p+发射极区12均与发射极电极1电耦合；所述栅氧化层4与所述n+发射极区2和p型基区9侧面接触；
所述n型漂移层5底部具有n型电场阻止层6；n型电场阻止层6背面与p+集电极区7相接触，所述p+集电极区7与集电极电极10电耦合；
FWD具有：设置有形成在n型漂移层5表面的多个虚拟沟道，以及在衬底上形成的n型漂移层5；在n型漂移层5上平行虚拟沟道方向设置有多段p型基区9，所述p型基区9将位于虚拟沟道之间的n型漂移层5隔离出n-漂移区13，所述n-漂移区13上覆盖有肖特基势垒16区；
所述虚拟沟道经由作为信号线而彼此共同耦合在一起与发射极电极1相连；
虚拟沟道间隔穿过p型基层，并且虚拟沟道的底部到达衬底，在FWD的虚拟沟道与IGBT的栅电极3之间的p型基层上表面也设置有p+阳极层；
在FWD部分的n型漂移层5的背面形成的n+阴极，所述n+集电极区8与所述集电电极电连接。
本实施方式中，n-漂移区13的掺杂浓度比p+集电极区7低，电阻率大，因此导通过程中n-漂移区13的额外载流子数较低。集电极加反向电压时，RC-IGBT中的集成二极管导通。FWD部分的阳极结构具有肖特基势垒16接触区和P+P结区，并且Sb(Schottky barrier)和P+P结区交替位于阳极线上。由于p+/p-阳极区和阴极N+/N-对载流子的有效抑制，其反向恢复功耗大幅降低。来自IGBT区域背面的空穴进入抑制了二极管反向恢复条件下的电压振荡，并且N+/N-阴极能够减小反向恢复过程中的拖尾电流。此外，通过将碰撞电离电固定在沟槽的底部并从背面注入空穴，靠近表面和背面电场强度减弱。所以在高电流条件该器件的动态特性非常稳定。本实施方式的剖面图可参考图4和图5结构，不同的是本实施方式中没有图4和图5中示出的n型存储层。所述RC-IGBT半导体装置的半导体材料采用Si、SiC、GaAs或者GaN。n型漂移层厚度110μm。n型漂移层掺杂浓度为1.85×1014,N型电场阻止层的厚度为2.2μm，N型电场阻止层的掺杂浓度为2.1×1015。
实施方式二：在以上实施方式的基础上了，在发射极区的p型基极层下方且在IGBT的栅电极3和FWD的虚拟沟道之间设置n型存储区11(如图3所示)。传统的沟槽栅场阻止RC-IGBT而言，其器件结构中不存在n型存储区11，从而高掺杂p+集电极空穴直接通过n-漂移区13到达发射极。本发明加入了n型存储层，所述n型存储区11具有提供载流子存储功能或电场截止功能，其浓度略高于低掺杂的n-漂移区13浓度，这样n型半导体阻挡层和发射层p-几区和电位差就高于没有存储曾是的发射极侧p基区与n-漂移区13之间的电位差。这个高电压阻挡了来自p+集电极区7的空穴，建立可空穴的增强区，加强了发射极附近的载流子浓度。n型半导体阻挡层增加的电势存储了来自靠近上面发射极的p区送来的空穴，增加了载流子浓度，有利于降低RC-IGBT的饱和压降。
本实施方式的剖面图如图4和图5所示。本发明中采用了肖特基势垒16区能够降低器件的势垒，同时保持优良的耐高压、高温特性和浪涌能力。
实施方式三
在以上实施方式的基础上，所述n+集电极区8被多个p+集电极区7隔离成多段(如图6所示)。所述p+集电极区7的宽度大于n+集电极区8n+集电极区8的深度大于p+集电极区7的深度。
p+集电极的宽度大于n+集电极的宽度，由于p+集电极宽度的增大，器件从MOSFET工作模式转变为双极性IGBT工作模式的影响被削弱，器件能更好地进入IGBT模式。FWD导通电压小于传统RC-IGBT，且氧化槽之间的n+集电极充当了FWD的阴极。
实施方式四
在以上实施方式的基础上，在FWD部分的n型漂移层5的背面所述n+集电极区8和所述p+集电极区7之间设置有SiO2氧化槽。当p+集电极电压增大时，器件有单极性MOSFET工作模式转变为双极性IGBT工作模式，背部的氧化槽结构增加了横向电阻，从而阻止了背面n+集电极和p+集电极的短路导通。此时，集电极p+部分开始向漂移区注入大量的空穴，形成了空穴电流。同时，空穴电流和从n+发射极过来的电子进行复合，在漂移区形成电导调制效应，n-漂移区13的电阻迅速降低，器件处于正向导通模式。
以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明技术原理的前提下，还可以做出若干改进和变形，这些改进和变形也应视为本发明的保护范围。
Claims (7)
1.一种RC-IGBT半导体装置，在一个衬底上形成有IGBT和FWD，其特征在于，
IGBT具有：p型基区和n型漂移层，所述p型基区形成在n型漂移层的表面；
多个沟槽栅结构，每个所述沟槽栅极结构包括在所述衬底上的沟槽、所述沟槽中的导电膜以及IGBT元件的多晶硅栅电极和栅氧化层；所述衬底上的所述沟槽内设置有SiO2栅氧化层，SiO2栅氧化层上沉积有多晶硅；
所述栅电极穿过所述p型基区，所述p型基区由所述栅电极分成多个间隔区域；
在所述间隔区域中，所述p型基区上表面设置有p+发射极区和n+发射极区，所述p+发射极区与所述N+发射极区彼此独立；所述N+发射极区设置在p+发射极区的两侧；n+发射极区设置在所述间隔区域的表面部分中，所述n+发射极及p型基区的侧壁均与沟槽侧壁外表面相接触，所述n+发射极区和p+发射极区均与发射极电极电耦合；所述栅氧化层与所述N+发射极区和p型基区侧面接触；
所述n型漂移层底部具有n型电场阻止层；n型电场阻止层背面与p+集电极区相接触，所述p+集电极区与集电极电极电耦合；
FWD具有：设置有形成在n型漂移层表面的多个虚拟沟道，以及在衬底上形成的n型漂移层；在n型漂移层上平行虚拟沟道方向设置有多段p型基区，所述p型基区将位于虚拟沟道之间的n型漂移层隔离出n-漂移区，所述n-漂移区上覆盖有肖特基势垒区；
所述虚拟沟道经由作为信号线而彼此共同耦合在一起与发射极电极相连；
虚拟沟道间隔穿过p型基层，并且虚拟沟道的底部到达衬底，在FWD的虚拟沟道与IGBT的栅电极之间的p型基层上表面也设置有p+阳极层；
在FWD部分的n型漂移层的背面形成的n+集电极区，所述集电极区与所述集电电极电连接。
2.根据权利要求1所述的一种RC-IGBT半导体装置，其特征在于，所述n+集电极区被多个p+集电极区隔离成多段。
3.根据权利要求2所述的一种RC-IGBT半导体装置，其特征在于，所述n+集电极区的宽度小于p+集电极区的宽度。
4.根据权利要求2所述的一种RC-IGBT半导体装置，其特征在于，在FWD部分的n型漂移层的背面所述n+集电极区和所述p+集电极区之间设置有SiO2氧化槽。
5.根据权利要求1所述的一种RC-IGBT半导体装置，其特征在于，在发射极区的p型基极层下方且在IGBT的栅电极和FWD的虚拟沟道之间设置n型存储区。
6.根据权利要求1所述的一种RC-IGBT半导体装置，其特征在于，所述RC-IGBT半导体装置的半导体材料采用Si、SiC、GaAs或者GaN。
7.根据权利要求1所述的一种RC-IGBT半导体装置，其特征在于，n型漂移层厚度110um。
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